JPS63134665A - Gas scavenger - Google Patents

Gas scavenger

Info

Publication number
JPS63134665A
JPS63134665A JP62261507A JP26150787A JPS63134665A JP S63134665 A JPS63134665 A JP S63134665A JP 62261507 A JP62261507 A JP 62261507A JP 26150787 A JP26150787 A JP 26150787A JP S63134665 A JPS63134665 A JP S63134665A
Authority
JP
Japan
Prior art keywords
gas
wall
chamber
scavenger
gas scavenger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62261507A
Other languages
Japanese (ja)
Other versions
JP2642936B2 (en
Inventor
ジェリー・エイ・テイラー・シニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thermco Systems Inc
Original Assignee
Thermco Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermco Systems Inc filed Critical Thermco Systems Inc
Publication of JPS63134665A publication Critical patent/JPS63134665A/en
Application granted granted Critical
Publication of JP2642936B2 publication Critical patent/JP2642936B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野〕 不発明は、垂直または水平の化学#看炉内の加工室から
処理後出て行く際の半導体ウェーハからガスを抽出(m
dxct)するガス掃気器に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The invention relates to the extraction of gases from semiconductor wafers as they exit a processing chamber in a vertical or horizontal chemical furnace (m
dxct).

(従来の技術) 拡散、蒸着、敲化、及び焼なまし等の半導体製造工程に
あって、ボート形の容器内の半導体ウェーハは、電気加
熱素子に囲まれた水平の管状室内で、加熱された毒性の
可燃性ガスまたは腐食性ガスによって処理される。ガス
掃気器は管状室の排気端で用いられてガスを排気機構室
に引き入れている。第1図は、炉23中の従来の加熱壁
の加工管24とその炉の排気端26に固着された掃気器
30の断面平面図である。ガスは、加工管24の供給端
25に流れ排気端26を通って掃気器30へ、さらには
排気機構室33に接続された排気口32に入っていく。
(Prior Art) During semiconductor manufacturing processes such as diffusion, deposition, abrasion, and annealing, semiconductor wafers in a boat-shaped container are heated in a horizontal tubular chamber surrounded by electrical heating elements. treated with toxic, flammable or corrosive gases. A gas scavenger is used at the exhaust end of the tubular chamber to draw gas into the exhaust mechanism chamber. FIG. 1 is a cross-sectional plan view of a conventional heated wall fabricated tube 24 in a furnace 23 and a scavenger 30 secured to the exhaust end 26 of the furnace. The gas flows into the supply end 25 of the processing tube 24 and through the exhaust end 26 to the scavenger 30 and further into the exhaust port 32 connected to the exhaust mechanism chamber 33.

また空気は通常は覆いのない掃気器の外側の端面834
を辿って掃気器30に入り、さらには排気口32を通っ
て排気機構室33に入っていく。このような掃気器は一
般には、約30.48crn(約12インチ)平方から
約38.10(1m(約15インチ)平方までの太ぎさ
で、約30.48crn(約12インチ)から約45.
723(約18インチ)までの深さに作られ℃いる。
The air is also normally exposed at the outer end surface 834 of the scavenger, which is uncovered.
The air enters the scavenger 30 and further passes through the exhaust port 32 and enters the exhaust mechanism chamber 33. Such scavengers are generally about 12 inches square to about 15 inches square in diameter; ..
It is built to a depth of up to 723°C (approximately 18 inches).

(発明が解決しようとする問題点) 加工後および加工ガス(process g(Lll)
または浄化ガスCp1Lrrta gas>が流れてい
る間に、ウェーハをのせたボート形の容器22は容器担
体(図示しない〕によって加工管24から排気端を介し
て掃気器30に引き出されて空気中の着脱ステーション
(図示しない〕までいく。第1図に示すように、かかる
掃気器30の構成では、容器22が加工管24から引き
出される際に、掃気器内のガス乱流がウェーハ20を通
過するように流れる。
(Problems to be solved by the invention) After processing and processing gas (process g (Lll)
Alternatively, while the purifying gas Cp1Lrrta gas> is flowing, the boat-shaped container 22 carrying the wafers is pulled out from the processing pipe 24 via the exhaust end to the scavenger 30 by a container carrier (not shown) and removed in the air. station (not shown). As shown in FIG. flows to

これによって掃気器30内で捕捉された粒子は加工管2
4からの連行粒子とともにガス甲で連行されて、ガスが
容器を通る際にウェーハ20の表面に沈着する。さらに
、空気流36も同様に容器22の走行路を横切って引き
出される。
As a result, the particles captured in the scavenger 30 are transferred to the processing pipe 2.
Entrained in the gas shell along with entrained particles from 4, the gas is deposited on the surface of the wafer 20 as the gas passes through the vessel. Furthermore, air flow 36 is drawn across the travel path of container 22 as well.

(発明の効果〕 本発明のガス掃気器においては、ガスと空気は容器の走
行路を通過することなく掃気器を流れていく。この改良
された掃気器にあっては、ガスと空気は掃気器の充気室
の中心部から離れ掃気器の周壁、さらには排気機構室3
3へ流れていく。その上、本発明のガス掃気器はより効
果的に加工ガスと浄化ガスを排気機構室に引き入れるの
で、加工管まわりの大気は安全にされたままで加工管は
稼動する。
(Effect of the invention) In the gas scavenger of the present invention, gas and air flow through the scavenger without passing through the travel path of the container.In this improved scavenger, gas and air flow through the scavenger. The peripheral wall of the scavenger, further away from the center of the filling chamber of the scavenger, and even the exhaust mechanism chamber 3.
It flows to 3. Moreover, the gas scavenger of the present invention more effectively draws processing gas and purification gas into the exhaust mechanism chamber, so that the processing pipe can operate while the atmosphere around the processing pipe remains safe.

(問題を解決するための手段) 一般に、改良された掃気器には、両端が対向する充気室
を画成する周壁が具備され、ガスの流れはその一方の端
では垂直または水平の炉の加工室に連通し、もう一方の
端では大気に連通している。
SUMMARY OF THE INVENTION Improved scavengers generally include peripheral walls defining opposed plenum chambers at one end of which the gas flow is directed into a vertical or horizontal furnace. It communicates with the processing chamber and the other end with the atmosphere.

又、外壁にはガスの流れがガス排気機構室へ連通してい
るガス排気口が具備されている。充気室は内壁によって
ウェーハの走行する裏1室とガスの流れが外壁に設けら
れたガス排気口に連通している第2室とに分割されてい
る。内壁にはウェーハ足行路のまわりで第1室に流れこ
むガスと空気を第2至へ抽出するための窓が設けられ又
いることが1安である。実質的に空気の匠れがウェーハ
の表面を横切らないように悪がウェーハの走行路を実質
的に囲繞することが好ましく、ウェーハの表面を空気が
全く横切らないことが最も好ましい。
The outer wall is also provided with a gas exhaust port through which the gas flow communicates with the gas exhaust mechanism chamber. The air-filled chamber is divided by an inner wall into a back chamber in which the wafer travels and a second chamber in which the gas flow communicates with a gas exhaust port provided in the outer wall. The inner wall may be provided with windows for extracting gas and air flowing into the first chamber around the wafer path into the second chamber. Preferably, the air substantially surrounds the travel path of the wafer so that substantially no air smear crosses the surface of the wafer, and most preferably, no air crosses the surface of the wafer.

以下にがかる掃気器の詳細を説明するが、後に説明され
る如く外壁及び内壁によジ画成される第2室の両端は充
気室の両端でガスの短絡が生じないように密封されるこ
とが好ましい。又、掃気器には窓の設けられた内壁と作
動関係にあるダンパーが具備され空気の流形を変えずに
ガスの流量と速度が制御されるのが好ましい。
The details of the scavenger will be explained below, and as will be explained later, both ends of the second chamber defined by the outer wall and the inner wall are sealed to prevent gas short-circuiting at both ends of the plenum chamber. It is preferable. It is also preferred that the scavenger include a damper in operative relationship with the windowed inner wall to control the gas flow rate and velocity without changing the air flow pattern.

(芙飛例と作用) 以下に不発明の好適な実施例を説明して本発明のその他
の詳細、目的及び利点を明らかにする。
EXAMPLES AND OPERATIONS In the following, preferred embodiments of the invention will be described to reveal other details, objects and advantages of the invention.

第2図及び第3図には供給端42と排気1444が具備
された水平の加工管40との使用を意図した改良された
掃気器の主たる構造が図示されである。かかる加工管4
0は炉46内にて同様な雷が2ないし4不重ねられてい
るのが逝常である。
2 and 3, the main structure of an improved scavenger intended for use with a horizontal process tube 40 having a feed end 42 and an exhaust 1444 is illustrated. Such processed pipe 4
0 usually dies when two to four similar lightning strikes are stacked in the furnace 46.

掃気器50は充気室54、内側端56及び外側端58を
具備するシリンダー54を形成する外周壁52よジ成る
。充気室54の外径と整合する円63の周囲を画成する
一般的なフランジ60が外壁52に溶接され、かつ炉に
固着するように適合されるのが一般的である。ガスの流
れは掃気器50の内側端56と加工管40の排気端44
で連通してだり、また第3図に図示される如く、加工管
40の排気端44は充気室内に十分に突出するようにな
っていてもよい。掃気器50の外壁52には排気ガス口
61が設けられており、排気機構室62に連通している
Scavenger 50 comprises an outer circumferential wall 52 forming a cylinder 54 having a plenum 54 , an inner end 56 and an outer end 58 . A conventional flange 60 defining a circumference of a circle 63 that matches the outside diameter of the plenum chamber 54 is typically welded to the outer wall 52 and adapted to be secured to the furnace. The gas flow is between the inner end 56 of the scavenger 50 and the exhaust end 44 of the processing tube 40.
Alternatively, as shown in FIG. 3, the exhaust end 44 of the processing tube 40 may project substantially into the plenum chamber. An exhaust gas port 61 is provided on the outer wall 52 of the scavenger 50 and communicates with an exhaust mechanism chamber 62.

掃気器50には窓が設けられた内壁70が外壁52と間
隔を置いて設置され、充気室をウェーハを載せた容器2
2が加工管40と着脱ステーション(図示しない)間を
走行する際に介する中央?d80と一般に内壁70と外
壁52により画成される第2室82に分割している。中
央室80と同じ直径でかつ整合する円78を画成するフ
ランジ72は内壁70の外側端に溶接され得る。端板6
0と72が加工ガスが大気中へもれないように第2呈8
2の両端を封着することが好ましい。
The scavenger 50 has an inner wall 70 provided with a window spaced apart from the outer wall 52, and the air-filled chamber is connected to the container 2 on which the wafers are placed.
2 runs between the processing pipe 40 and the attachment/detachment station (not shown). d80 and a second chamber 82 generally defined by an inner wall 70 and an outer wall 52. A flange 72 defining a circle 78 of the same diameter and alignment as the central chamber 80 may be welded to the outer end of the inner wall 70 . End plate 6
0 and 72 are used to prevent processing gas from leaking into the atmosphere.
It is preferable to seal both ends of 2.

内壁70に設けられた窓76によジガスが充気室54の
中央室80と第2室を連通して流れるのが可能となって
いる。ガスと空気の流路が中央室の中心に向ったジウエ
ーハ20を横切るよりはむしろ放射状に外側に向くよう
に窓76が中央室を囲決することが好ましい。窓の設置
間隔は第2室へ流れて行くガスと空気の流量と圧力の低
下を調和させるために排気口61より遠ざがった所では
より密になるようにすることができる。
A window 76 provided in the inner wall 70 allows the gas to flow between the central chamber 80 and the second chamber of the plenum chamber 54 in communication with each other. Preferably, windows 76 enclose the central chamber such that the gas and air flow paths are directed radially outward rather than across the wafer 20 toward the center of the central chamber. The windows can be spaced closer together at locations farther away from the exhaust port 61 in order to balance the flow rate and pressure drop of the gas and air flowing into the second chamber.

内壁70の窓76と同形状の窓を具備し中央室80円に
滑らせて挿合するダンパー90;工回転操作さ八て窓7
6の有効面責の−I3 SQ 5行う。′/:2気と加
工費ケ一方どじ、他方の排気機構室との間の自効な圧力
低下は比較的−冗である改、実施しようとする加工に於
いて比較的扁いガス流入率が必要とされる場合には窓7
6の有効面積は拡大されることが好ましい。
A damper 90 equipped with a window of the same shape as the window 76 of the inner wall 70 and slidably inserted into the central chamber 80;
-I3 SQ 5 of effective face-to-face examination of 6. '/: The self-effective pressure drop between the gas and the exhaust mechanism chamber on the one hand and the exhaust mechanism chamber on the other is relatively low. Windows 7 if required
Preferably, the effective area of 6 is expanded.

第2図及び第3図にて図示される如ぎ掃気器は一般にス
テンレス鋼の薄板で構成され、電気研摩されて光沢仕上
げされるのが好ましい。かがる掃気器の内壁70の直径
は約38.lOcm(約15インチ)、外壁52の直径
は約40.64 cm (約16インチ)となる。
Scavengers, such as those illustrated in FIGS. 2 and 3, are generally constructed from sheet stainless steel, preferably electropolished to a high gloss finish. The diameter of the inner wall 70 of the scavenger is approximately 38 mm. lOcm (approximately 15 inches), and the diameter of the outer wall 52 is approximately 40.64 cm (approximately 16 inches).

第4図に図示されである不発明の第2の実施態様では断
面が長方形となっている。この掃気器90では中央室9
2と第2室94が開口部を設けた内壁96により分割さ
れている。かかる態様は容器の下を流れるガスが容器中
のウェーハを通過するのを一般に防止する半円筒の殻状
の底面を具備した容器と合わせて使用される。
A second inventive embodiment, illustrated in FIG. 4, has a rectangular cross section. In this scavenger 90, the central chamber 9
2 and a second chamber 94 are divided by an inner wall 96 provided with an opening. Such an embodiment is used in conjunction with a container having a semi-cylindrical shell-like bottom surface that generally prevents gases flowing underneath the container from passing through the wafers in the container.

本発明の好適な態様を示し説明したが、本発明はそれら
態様に限定されるものでなく、前記の特許請求の範囲内
で他の方法によって種々の具体化をなし得るものである
Although preferred embodiments of the invention have been shown and described, the invention is not limited to these embodiments, but may be embodied in other ways within the scope of the following claims.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は(前記した如く)従来の掃気器の断面平面図で
ある。 第2図は不発明の好適実施例の分解側面斜視図である。 第3図は第2図の掃気器の想3−3についての断面平面
図である。 第4図は不発明の第2の実施例の略正面斜視図である。 20・・・半導体ウェーハ  40・・・加工室50・
・・ガス掃気器    52・・・外周壁54・・・光
掃室      56・・・充気室内側端58・・・充
気室外側端   61・・・ガス排気口62・・・ガス
排気機構   70・・・内壁76・・・窓     
   80・・・第1室82・・・稟14      
 90・・・ダンノぐ−(外3名) 勺/ す3 ん・ノチ
FIG. 1 is a cross-sectional plan view of a conventional scavenger (as described above). FIG. 2 is an exploded side perspective view of the preferred embodiment of the invention. FIG. 3 is a cross-sectional plan view of the scavenger 3-3 in FIG. 2. FIG. 4 is a schematic front perspective view of the second embodiment of the invention. 20... Semiconductor wafer 40... Processing chamber 50.
...Gas scavenger 52...Outer peripheral wall 54...Light scavenging chamber 56...Inside end of charging chamber 58...Outside end of charging chamber 61...Gas exhaust port 62...Gas exhaust mechanism 70...Inner wall 76...Window
80...1st room 82...Rin 14
90... Dannogu (3 other people)

Claims (8)

【特許請求の範囲】[Claims] (1)半導体ウェーハが通路に沿つて加工室より出て行
く際に該ウェーハよりガスを抽出するガス掃気器におい
て、ガスの流れが一方の端で該加工室と連通し、第2の
端で大気と連通している対向する両端を具備する充気室
を画成し、かつガスの流れがガス排気機構室に連通して
いるガス排気口を具備する外周壁と、該充気室を前記ウ
ェーハが走行する第1室とガスの流れが該外周壁中の該
排気口と連通する第2室とに分割し、該ウェーハ走行路
の囲りに複数の窓を具備する内壁よりなることを特徴と
するガス掃気器。
(1) In a gas scavenger that extracts gas from a semiconductor wafer as it exits the processing chamber along a passageway, the gas flow communicates with the processing chamber at one end and at a second end. an outer circumferential wall defining a plenum with opposing ends in communication with the atmosphere and having a gas exhaust port through which a flow of gas communicates with the gas exhaust mechanism chamber; The chamber is divided into a first chamber in which the wafer travels and a second chamber in which the gas flow communicates with the exhaust port in the outer peripheral wall, and the inner wall includes a plurality of windows around the wafer travel path. Characteristic gas scavenger.
(2)前記窓を設けた内壁と作動関係にあるダンパーを
更に含む特許請求の範囲第1項記載のガス掃気器。
(2) The gas scavenger according to claim 1, further comprising a damper in operative relationship with the inner wall provided with the window.
(3)前記ダンパーが摺動可能である特許請求の範囲第
2項記載のガス掃気器。
(3) The gas scavenger according to claim 2, wherein the damper is slidable.
(4)前記ダンパーが回転可能である特許請求の範囲第
2項記載のガス掃気器。
(4) The gas scavenger according to claim 2, wherein the damper is rotatable.
(5)前記窓を設けた内壁が前記外壁と間隔をおいて設
置されている特許請求の範囲第1項記載のガス掃気器。
(5) The gas scavenger according to claim 1, wherein the inner wall provided with the window is installed at a distance from the outer wall.
(6)前記内壁と前記外壁により画成される前記第2室
の両端が封着されている特許請求の範囲第1項記載のガ
ス掃気器。
(6) The gas scavenger according to claim 1, wherein both ends of the second chamber defined by the inner wall and the outer wall are sealed.
(7)前記内壁に設けた前記窓が前記ウェーハ走行路を
実質的に囲繞している特許請求の範囲第1項記載のガス
掃気器。
(7) The gas scavenger according to claim 1, wherein the window provided in the inner wall substantially surrounds the wafer travel path.
(8)前記内壁に設けた前記窓の総面積が前記半導体ウ
ェーハがおおいのない出口より出て行くのに介する前記
第2室の端部の断面積よりも大きい特許請求の範囲第1
項記載のガス掃気器。
(8) The total area of the windows provided in the inner wall is larger than the cross-sectional area of the end of the second chamber through which the semiconductor wafer exits through the covered exit.
Gas scavenger as described in section.
JP62261507A 1986-10-16 1987-10-16 Gas scavenger Expired - Fee Related JP2642936B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US919736 1986-10-16
US06/919,736 US4711197A (en) 1986-10-16 1986-10-16 Gas scavenger

Publications (2)

Publication Number Publication Date
JPS63134665A true JPS63134665A (en) 1988-06-07
JP2642936B2 JP2642936B2 (en) 1997-08-20

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JP62261507A Expired - Fee Related JP2642936B2 (en) 1986-10-16 1987-10-16 Gas scavenger

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US (1) US4711197A (en)
EP (1) EP0264177B1 (en)
JP (1) JP2642936B2 (en)
KR (1) KR930007610Y1 (en)
CA (1) CA1277442C (en)
DE (1) DE3780747T2 (en)

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JPH05326428A (en) * 1992-05-18 1993-12-10 Nec Yamagata Ltd Scavenger for diffusion furnace

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US4909185A (en) * 1988-02-03 1990-03-20 Weiss Scientific Glass Blowing Co. Cantilever and cold zone assembly for loading and unloading an oven
US4992044A (en) * 1989-06-28 1991-02-12 Digital Equipment Corporation Reactant exhaust system for a thermal processing furnace
US5370736A (en) * 1992-10-26 1994-12-06 Texas Instruments Incorporated Horizontal reactor hardware design
CN102732860B (en) * 2011-04-14 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and chemical vapor deposition equipment with reaction chamber
CN103160813B (en) * 2011-12-14 2015-10-21 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of reaction chamber and apply the plasma processing device of this reaction chamber

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JPS62206826A (en) * 1986-03-06 1987-09-11 Nippon Texas Instr Kk Thermal treatment equipment for semiconductor

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Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JPS62206826A (en) * 1986-03-06 1987-09-11 Nippon Texas Instr Kk Thermal treatment equipment for semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326428A (en) * 1992-05-18 1993-12-10 Nec Yamagata Ltd Scavenger for diffusion furnace

Also Published As

Publication number Publication date
EP0264177A2 (en) 1988-04-20
DE3780747D1 (en) 1992-09-03
EP0264177A3 (en) 1990-05-23
KR880008706U (en) 1988-06-30
EP0264177B1 (en) 1992-07-29
DE3780747T2 (en) 1993-01-14
JP2642936B2 (en) 1997-08-20
KR930007610Y1 (en) 1993-11-05
US4711197A (en) 1987-12-08
CA1277442C (en) 1990-12-04

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