438*7 5 8 五、發明說明（1) 本發明係有關於一種爐管進管裝置，特別是有關於一 種可確保被處理晶圓不受外界氧氣干擾且可充分去除被處 理晶圓上之雜質微粒之爐管進管裝置。 一般來說’在半導體製程中，爐管係用以加熱晶圓， 來達成所想要的反應，習知爐管進管裝置（furnace boat-push device)10如第1圖所示，爐管1係設置在一歧 管（manifold )2上’而歧管2固定在一機台3上；承載晶圓 的晶舟（boat)4係放置在一平台5上，而此平台5係由一升 降裝置6所控制；在歧管2下方設有一氮氣淋浴盒（1^2 shower box) 7 ’使晶舟4在進入爐管1前，可避免不必要的 氧氣進入爐管1中’另外部分裝置整體外設有一隔絕室 (load lock)8 ,以使整個裝置均處於氮氣環境中。 參考第2a、2b和2c圖說明習知爐管進管裝置1〇的缺 點’如第2a圖所示，由於氮氣淋浴盒7與歧管2之間存有一 定的間隙’因此雖然晶舟4内的晶圓42因為受到氮氣71的 通過而可移除氧氣，然而在進入爐管1前仍會受到外界氣 體9的干擾，而將氧氣帶入爐管1内。 又，如第2b圖所示，在第2b圖的方向P代表裝置10之 機台正面’而晶舟4内之支撐件4 1之排列則通常如圖所 示’因此從氮氣淋浴盒7所吹出之氮氣71在通過晶圓42 前’會先通過支撐件41，結果導致支撐件41上的雜質微粒 (particle)被氮氣71吹起而被帶到晶圓42表面上而附著， 進而污染晶圓42。 又’如第2c圖所示，習知從氮氣淋浴盒7所吹出之氮438 * 7 5 8 V. Description of the invention (1) The present invention relates to a furnace tube feeding device, and in particular, to a method for ensuring that a processed wafer is not interfered by external oxygen and sufficiently removing the wafer from the processed wafer. Furnace tube inlet device for foreign particles. Generally, in the semiconductor process, the furnace tube is used to heat the wafer to achieve the desired reaction. The furnace boat-push device 10 is shown in Figure 1. The furnace tube 1 is arranged on a manifold 2 and the manifold 2 is fixed on a machine 3; a boat 4 carrying a wafer is placed on a platform 5 and the platform 5 is composed of a Controlled by the lifting device 6; a nitrogen shower box (1 ^ 2 shower box) is provided under the manifold 2 7 'to make the crystal boat 4 avoid unnecessary oxygen entering the furnace tube 1 before entering the furnace tube 1' The entire peripheral device has a load lock 8 so that the entire device is in a nitrogen environment. The disadvantages of the conventional furnace tube inlet device 10 will be described with reference to FIGS. 2a, 2b, and 2c. 'As shown in FIG. 2a, there is a certain gap between the nitrogen shower box 7 and the manifold 2.' The wafer 42 inside can be removed by passing the nitrogen gas 71, but before entering the furnace tube 1, it will still be disturbed by the external gas 9 and bring the oxygen into the furnace tube 1. In addition, as shown in FIG. 2b, the direction P in FIG. 2b represents the front of the machine 10 of the device 10, and the arrangement of the support members 41 in the wafer boat 4 is generally as shown in the figure. The blown nitrogen gas 71 will pass through the support member 41 before passing through the wafer 42. As a result, the impurity particles on the support member 41 are blown up by the nitrogen gas 71 and brought to the surface of the wafer 42 to be attached, thereby contaminating the crystal. Round 42. Also, as shown in FIG. 2c, the nitrogen blown out from the nitrogen shower box 7 is known.
0593-5707ITWF.ptd 第4頁 438?58 五、發明說明（2) 氣71在通過晶圓4 2時，係與晶圓4 2平行，此方式對於晶圓 上的雜質微粒移除效率而言，是不佳的。 有鑑於此，本發明之目的係為了解決上述問題而提供 —種爐管進管裝置’其可確保被處理晶圓不受外界氧氣干 擾’且可有效地充分去除被處理晶圓上的雜質微粒。 在本發明中，提供一種爐管進管裝置，包括：機台； 設置在機台上的歧管，其具有進入口；以及設置在歧管上 的氣封裝置’其具有設置在進入口旁的喷出口。 又在本發明中’進入口係面對地面，而氣封裝置包括 設置在歧管上的噴嘴’且喷出口係以與地面夾既定角度的 方式形成在嗔嘴上。 又在本發明中，氣封裝置更包括與喷嘴連接的氮氣 源。 又在本發明中，提供—種爐管進管裝置，用以搬送晶 舟，其中晶舟具有複數個支撐件，其用以承載複數個晶 圓，而上述爐管進管裝置包括：冑台；設置在機台上的歧 管1具有進入口；以及設置在歧管上的氣封裝置，其具 氮氣喷出口，且從氮氣噴出口所喷出且經過晶舟之支撐 的氮氣不會通過晶圓。 又在本發明中，氣封裝置包括設置在歧管之進入口 :士： ’ Χ氮氣噴出口係以與晶圓夾既定角度的方式形成 在喷嘴上。 m 之爐管進管裝置的實施例 以下，就圖式說明本發明 圖式簡單說明0593-5707ITWF.ptd Page 4 438? 58 V. Description of the invention (2) When the gas 71 passes through the wafer 42, it is parallel to the wafer 42. This method is effective for the removal of impurity particles on the wafer. , Is not good. In view of this, the purpose of the present invention is to provide the above-mentioned problem in order to provide a furnace tube feeding device 'which can ensure that the processed wafer is not interfered by external oxygen' and can effectively remove the impurity particles on the processed wafer. . In the present invention, a furnace tube inlet device is provided, including: a machine table; a manifold provided on the machine table having an inlet; and a gas seal device provided on the manifold, which has a side provided by the inlet. Spout. Also in the present invention, the 'entry port is facing the ground, and the air-sealing device includes a nozzle provided on the manifold', and the ejection port is formed on the mouthpiece at a predetermined angle with the ground. In the present invention, the gas sealing device further includes a nitrogen source connected to the nozzle. Also in the present invention, there is provided a furnace tube feeding device for transporting a wafer boat, wherein the wafer boat has a plurality of supporting members for carrying a plurality of wafers, and the furnace tube feeding device includes: a platform ; The manifold 1 provided on the machine has an inlet; and an air-sealing device provided on the manifold, which has a nitrogen spray outlet, and the nitrogen sprayed from the nitrogen spray outlet and supported by the wafer boat will not pass through Wafer. Also in the present invention, the gas sealing device includes an inlet provided at the manifold: 士: The nitrogen gas outlet is formed on the nozzle at a predetermined angle with the wafer holder. Example of a tube feeding device for a furnace tube of the present invention
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438758 五、發明說明（3) 第1圖係顯示習知爐管進管裝置之示意圖； 第2a圖係顯示習知爐管進管裝置之部分正視圖； 第2b圖係顯示習知爐管 第 2c圖係顯 示 習知 爐 管 動示意 圖； 第 3a圖係顯 示 本發 明 之 第3b圖係顯 示 本發 明 之 第 3c圖係顯 示 本發 明 之 氣流動 不意圖， 以 及 第 3d圖係顯 示 本發 明 之 分放大 圖。 [符號說明] 10 〜爐管進管裝置： > 1〜 2〜 歧管； 3~ 4〜 晶舟， 5- 6〜 升降裝置 9 7- 8〜 真空隔絕 室 9 9〜 41 〜支撐件 ， 42 71 〜氣氣； 1 1 11 卜喷嘴； 11 11 3〜（氮氣） 喷 出口 、 11 11 5〜氮氣； 11 21 〜進入口 ， P〜 進管裝置之部分俯視圖； 進管裝置中之晶圓間之氮氣流 爐管進管裝置之部分正視圖； 爐管進管裝置之部分俯視圖； 爐管進管裝置中之晶圓間之氮 爐管進管裝置之氣封裝置之部 爐管； 機台； 平台； II氣淋浴盒； 外界氣體； 〜晶圓， 〜氣封裝置： 2~氮氣源； 4 ~螺絲； 6~管路； 機台正面。 以下參考第3a、3b、3c和3d圖說明本發明之爐管進管438758 V. Description of the invention (3) Figure 1 shows a schematic diagram of a conventional furnace tube inlet device; Figure 2a shows a partial front view of a conventional furnace tube inlet device; Figure 2b shows a conventional furnace tube inlet device Figure 2c is a schematic diagram showing the operation of a conventional furnace tube; Figure 3a is a diagram showing the present invention; Figure 3b is a diagram showing the present invention; Figure 3c is a diagram showing the intention of the gas flow of the present invention; and Figure 3d is a diagram showing the points of the present invention. Zoom in. [Symbol description] 10 ~ furnace tube inlet device: > 1 ~ 2 ~ manifold; 3 ~ 4 ~ wafer boat, 5- 6 ~ lifting device 9 7-8 ~ vacuum isolation chamber 9 9 ~ 41 ~ support, 42 71 ~ gas; 1 1 11 nozzle; 11 11 3 ~ (nitrogen) nozzle, 11 11 5 ~ nitrogen; 11 21 ~ inlet, P ~ top view of part of pipe inlet device; wafer in pipe inlet device Part of the front view of the nitrogen tube furnace tube inlet device; Partial top view of the furnace tube tube inlet device; Part of the furnace tube of the gas sealing device of the nitrogen tube furnace tube inlet device in the wafer tube tube device; Platform; platform; II gas shower box; outside gas; ~ wafer, ~ air seal device: 2 ~ nitrogen source; 4 ~ screw; 6 ~ pipe; front of the machine. The following describes the furnace tube inlet of the present invention with reference to Figures 3a, 3b, 3c and 3d.
0593-5707TWF.ptd 第6頁 43的58 五、發明說明（4) 裝置，歧管2係如習知般設置在機台3上’而晶舟4則設置 在藉由升降裝置6控制的平台5上。 本發明與習知爐管進管裝置之不同點在於：移除習知 之氮氣淋浴盒7 ’而在歧管2之進入口 21旁設置一氣封裝置 11，其中歧管2之進入口 2 1係面對地面。 氣封裝置11之詳細構造如第3d圖所示，包括一喷嘴 111和一氮氣源1 1 2，喷嘴11 1藉由一螺絲11 4設置在歧管2 上，且具有一（氮氣）喷出口 113，其與地面夾一既定角 度；氮氣源112藉由一管路116與噴嘴111相連，以提供氣 封裝置11所需之氮氣11 5。 又，由於氣封裝置11係如第3b圖所示，因此從氣封裝 置11之氮氣喷出口 113所喷出的氣體在經過晶舟4之支撐件 41後’不會通過晶务4所承載的晶圓42。 以下參考第3a、3b和3c圖說明本發明之爐管進管裝置 之優點。 β 管的晶，，而可確：晶外；^免氣;法干擾將進入爐 又，如第3b圖所示氧氣的影響。 出口 113所喷出的氣氣115 ”裝置11係在考量使從氮氣噴 42的前提下所設言十，因此過：撐件41後不會通過晶圓 晶圓42上的問題。 几全去除外界雜質微粒依附在 又，如第3c圖所示， + 圓42夾既定角纟，因此 於喷嘴111之喷出口113係與晶 此可在晶圓42之間產生奮流0593-5707TWF.ptd Page 6 of 43 of 58 V. Description of the invention (4) The device, the manifold 2 is installed on the machine 3 as conventionally known, and the boat 4 is installed on the platform controlled by the lifting device 6. 5 on. The present invention is different from the conventional furnace tube inlet device in that the conventional nitrogen shower box 7 ′ is removed and an air seal device 11 is provided beside the inlet 21 of the manifold 2, wherein the inlet 2 of the manifold 2 is Facing the ground. The detailed structure of the air-sealing device 11 is shown in FIG. 3d, and includes a nozzle 111 and a nitrogen source 1 1 2. The nozzle 11 1 is arranged on the manifold 2 by a screw 11 4 and has a (nitrogen) ejection port. 113, which is clamped at a predetermined angle to the ground; the nitrogen source 112 is connected to the nozzle 111 through a pipeline 116 to provide the nitrogen 115 required by the gas seal device 11. In addition, since the air seal device 11 is shown in FIG. 3b, the gas sprayed from the nitrogen spray port 113 of the air seal device 11 will not be carried by the crystal business 4 after passing through the support 41 of the crystal boat 4. Of the wafer 42. The advantages of the furnace tube inlet device of the present invention will be described below with reference to Figs. 3a, 3b and 3c. β tube crystal, but it can be confirmed that: outside the crystal; ^ free of gas; method interference will enter the furnace, as shown in Figure 3b the effect of oxygen. The gas 115 ″ emitted from the outlet 113 is set in consideration of the premise that the nitrogen is sprayed from the 42. Therefore, the problem that the support 41 does not pass through the wafer 42 will be eliminated. As shown in Fig. 3c, the external impurity particles are attached to the + circle 42 with a predetermined angle 纟. Therefore, the jet 113 of the nozzle 111 and the crystal can generate a flow between the wafers 42.
0593-5707TVF.ptd 第7頁 4 3 8758 五、發明說明（5) (turbulent Π ow )，而可提高晶園42上之雜質微粒移除 效率。 如上述’本發明之爐管進管裝置可4保被處理晶圓不 受外界氧氣干擾’且可充分去除被處理晶圓上的雜質微 粒。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此項技藝者，在不脫離本發明之精 神和範圍内，當可作些許之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。0593-5707TVF.ptd Page 7 4 3 8758 V. Description of the invention (5) (turbulent Π ow), which can improve the removal efficiency of impurity particles on the crystal garden 42. As described above, "the furnace tube feeding device of the present invention can protect the processed wafer from external oxygen interference" and can sufficiently remove the impurity particles on the processed wafer. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some changes and retouching without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.
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