JPS63129623A - Ion beam exposure mask - Google Patents
Ion beam exposure maskInfo
- Publication number
- JPS63129623A JPS63129623A JP61277483A JP27748386A JPS63129623A JP S63129623 A JPS63129623 A JP S63129623A JP 61277483 A JP61277483 A JP 61277483A JP 27748386 A JP27748386 A JP 27748386A JP S63129623 A JPS63129623 A JP S63129623A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- mask
- ion beam
- si3n4
- beam exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 239000012528 membrane Substances 0.000 claims abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract 3
- 238000005530 etching Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000001020 plasma etching Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical group CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract 1
- 230000005465 channeling Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010220 ion permeability Effects 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はイオンビーム露光用のマスク構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a mask structure for ion beam exposure.
従来、イオンビーム露光用マスクけＪ、 Ｘｂ Ｂａｒ
ｔｅｌｔ「マスクイオンビームリゾグラフィ二次世代新
技術Ｊ 、 ５ｏｌｉｄ、 ５ｔａｔｅ Ｔｅｃｈｎ
ｏｌｏｇｌ １月本版會Ｒ４４〜５ Ｌ ｋｘｇｕｓ
ｔ １９８６に示されている如く、第２図α）〜（ｃｙ
）及び第３図の様な製作工穆図及び１ＦＩＴ図にて示さ
れる構造となっていた。すなわち、第２図でＦｉ、□□
□）Ｓｉ単結晶基板表面２０にポロンをドープＬｆＳｉ
エピタ千シャル層２１を２μ毒成長す也の）化学蒸着法
によりＥｉ Ｏｘ膜２２とｓｚｓ Ｎ４ ＠２５．２６
を形成し、（ｃ）１１面５ｆｆｌｓＮ＋膿２６を図形状
にマツチソゲして、該図形状５ｚｓＮ＋ ＩＩＩをマス
クとしてＳｉ幕板２０をエツチングして薄幌化し、（ｄ
）異方性エッチに！Ｑボｃ１７・ドープエビタ千シャル
層までエッチンルてＢｉ ＱＪ１２２とＢｉ Ｏ！膜２
３．２６を除去し、（ｅ）バイレツクス ガラス リン
グ２４をα基材に貼付け、Ｃ１ルジスト２５塗布を表面
に行って１図形状に露光現傷り、（（７１異方性エツチ
ング（リアクティブ イオン エツチング：ＲＴＩＣ）
ＫよりＳ＜エピタキシャル膜２１を図形状にエツチング
してレジストヲ除去する工穆をとってい几。Conventionally, ion beam exposure mask J, Xb Bar
telt "Mask ion beam lithography second generation new technology J, 5solid, 5tate Techn
ologl January edition meeting R44~5 L kxgus
As shown in Figure 2 α) ~ (cy
) and the structure shown in the manufacturing process diagram and 1FIT diagram as shown in Figure 3. That is, in Figure 2, Fi, □□
□) LfSi doped with poron on the Si single crystal substrate surface 20
EiOx film 22 and szs N4 @25.26 were grown by epitaxial layer 21 to a thickness of 2μ by chemical vapor deposition.
(c) The 11th surface 5fflsN+pus 26 is etched into a figure shape, and the Si curtain plate 20 is etched using the figure shape 5zsN+ III as a mask to make it thinner.
) For anisotropic sex! Q Bo c17 Dope Evita Etching to the 1000's layer Bi QJ122 and Bi O! membrane 2
3.26 was removed, (e) Virex glass ring 24 was attached to the α base material, C1 Lugist 25 was applied to the surface, exposed and damaged in the shape of figure 1, ((71 anisotropic etching (reactive ion etching) Etching: RTIC)
A step was taken to remove the resist by etching the epitaxial film 21 into a figure shape.
第３図はこのシリコン働チャンネリングマスクの作用を
示す断面図であり、Ｓｉエピタキシャル層〆
３１をメンプランとしｆｔ Ｅｉ単結晶３０の図形状マ
スクではプロトン（ｕｉ；加速されて照射されると単結
晶格子間をＨが打込まれ、５ｆｆ１層の薄い部分ｋＨ＋
の広＾ｔす＾を少ない状態で図形状にイオン・シャワー
が放出される様子を示し７ｔ４のである。FIG. 3 is a cross-sectional view showing the effect of this silicon-based channeling mask. In the figure-shaped mask of ft Ei single crystal 30 with a Si epitaxial layer 31 as a membrane plan, protons (ui; when accelerated and irradiated, H is implanted between the crystal lattices, and the thin part of the 5ff1 layer kH+
Figure 7t4 shows how an ion shower is released in a diagram with a small width.
〔発明が解決しようとする間Ｍ４）
しかし、上記従来技術によると、ＳＺエピタ千シャル層
でエツチング・ストップする場合に、８＜エピタキシャ
ル層と基板とのボロン濃贋分布＾ｔシャープになるとけ
いえ、少なからぬボロン拡散ｈ；基板５ｆｆｌに入るこ
とはまぬがれず、Ｓｉメンプランの膜厚制御が充分でな
−という問題点等がある。[While the invention is trying to solve M4] However, according to the above-mentioned conventional technology, when etching is stopped in the SZ epitaxial layer, the boron concentration distribution between the epitaxial layer and the substrate becomes 8<t sharp. It is inevitable that a considerable amount of boron will be diffused into the substrate 5ffl, and there are problems such as insufficient control of the film thickness of the Si membrane plan.
・ 本発明は、かかる従来技術の問題点をなくシ。- The present invention eliminates the problems of the prior art.
啄めて薄くて均一な単結晶メンプラン膜を形成する几め
のイオンビーム露光マスク構造を提供する事を目的とす
る。The purpose of the present invention is to provide a refined ion beam exposure mask structure that can be used to form a thin and uniform single-crystal Memplan film.
本発明け、かかる従来技術の問題点を解決するために、
イオンビーム露光マスクに於て、単結晶ＢｉＣをメンプ
ラン膜となし、＃ＳｊｃＳｉメンプラン膜上晶ｇｉエピ
タキシャル層を図形状に形成する構造となす手段をとる
。In order to solve the problems of the prior art, the present invention has the following features:
In an ion beam exposure mask, a method is taken in which a single crystal BiC is used as a Memplan film and a crystal gi epitaxial layer is formed on the #SjcSi Memplan film in a figure shape.
単結晶ＢｉＣをメンブラン嘩として用いる事により、イ
オン透過率が高く、且つ啄めて薄い均一なメンプラン膜
が形成できる作用がある。By using single-crystal BiC as a membrane, it is possible to form a membrane membrane that has high ion permeability and is thin and uniform.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１１は本発明の一実施例を示すＢｉ Ｃチャンネリン
グマスクの製作工径図である。すなわち、ケ）単結晶の
Ｓｉ１の表面にエピタキシャル層により単結晶の８ｚ’
０２を０．１μｍ穆度形成し、（ｂ）更にｓｉエピタキ
シャル３から成る単結晶Ｂｉ！；１１を１μｍ程度形成
し、（Ｃ）化学蒸着法によりＢ１５Ｎ４４ 、 ５ｉｓ
Ｎ番５．及び６を形成し、頓１！に直Ｂ１５Ｎ＋を図形
状にエッチして、該図形状Ｒ４５Ｍ４をマスクとしてＳ
ｊＪ＆結晶を板を裏面エッチ７を施し、ＳｉＣ２でニッ
チ・ストツブシ、（ｅ）日ム穐５及び６とＢｉ Ｏｔ
４を除去して、パイレヴクスリング８を貼付け、＜ｐｅ
面にイオン・ビームレジスト９を塗布して、イオン・ビ
ーム露光及び現像を施して、（ロ））＃記聞形状イオン
ビーム・レジスト９をマスクとしてＲ工Ｆ！（リアクテ
ィブ イオンエッチ）によるＲ工Ｅエッチ１０を施して
８ｉエピタ千シヤル３を図形状にエッチして、ＳａＣチ
ャンネリング・マスクができる。11 is a manufacturing process diagram of a Bi C channeling mask showing one embodiment of the present invention. That is, iii) a single crystal 8z'
02 with a 0.1 μm diameter, and (b) a single crystal Bi! made of Si epitaxial 3! ; 11 is formed to a thickness of about 1 μm, and (C) B15N44, 5is is formed by chemical vapor deposition.
N number 5. And form 6, ton 1! Directly etch B15N+ in the shape of the figure, and use the figure R45M4 as a mask to etch the S
Etch 7 on the back side of the jJ & crystal board, and niche-stitch with SiC2, (e) Nimu Aki 5 and 6 and Bi Ot.
Remove 4 and attach Pyrevx ring 8, <pe
Apply ion beam resist 9 to the surface, perform ion beam exposure and development, and (b)) R process F using #report shape ion beam resist 9 as a mask! The 8i epitaxial layer 3 is etched into a graphic shape by R-etching (reactive ion etching) 10 to form a SaC channeling mask.
本発明による８ｊＯチヤンネリング・マスクによると、
啄めて薄いメンプラン膜が均一な厚さで形成できる効果
ｈｔある。According to the 8jO channeling mask according to the present invention:
It has the advantage of being able to form a thin Memplan film with a uniform thickness.
第１図（ロ））〜（ｑ）は本発明の一実施例を示すｓｅ
ａチャンネリングマスクの製作工程図である。
第２図ｂ）〜（ａ）は、従来のチャンネリングマスクの
製造工種断面図。
第３図は従来のシリコンチャンネリングマスクの断面図
。
１．２０．５０・・・・・・ｇｉ単結晶２・・・・・・
ｓｉ ｃ
３．２１．３１ ・・・・・・Ｓｉエピタ千シャル層４
．２２・・・・・・ｓｈｏ雪
５、６．２５．２６・・・・・・５４ａＮ４７…・・・
裏面エッチ
８．２４・・・・・・パイレヴクスｅ１１ング９．２５
・・・・・・イオンビーム露光マスク１０・・・・・・
Ｒ工Ｅエッチ
以 上
出願人 セイコーエプソン株式会社
代理人 弁理士 最上 務 他１名°゛−２゛
第２図Figures 1 (b) to (q) show an embodiment of the present invention.
It is a manufacturing process diagram of an a channeling mask. FIGS. 2b) to 2(a) are cross-sectional views of the manufacturing process of a conventional channeling mask. FIG. 3 is a cross-sectional view of a conventional silicon channeling mask. 1.20.50...gi single crystal 2...
sic 3.21.31 ...Si epitaxial layer 4
．． 22...sho snow 5, 6.25.26...54aN47...
Back side etch 8.24... Pyrevx e11 ng 9.25
...Ion beam exposure mask 10...
R engineering E etching and above Applicant Seiko Epson Co., Ltd. Agent Patent attorney Tsutomu Mogami and 1 other person °゛-2゛Figure 2
Claims (1)
ラン膜上に単結晶Ｓｉエピタキシャル層を図形状に構成
した事を特徴とするイオンビーム露光マスク。An ion beam exposure mask characterized in that a membrane film is made of single crystal SiC, and a single crystal Si epitaxial layer is formed in a graphic shape on the SiC membrane film.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61277483A JPS63129623A (en) | 1986-11-20 | 1986-11-20 | Ion beam exposure mask |
| KR1019870011307A KR930001889B1 (en) | 1986-10-13 | 1987-10-13 | Ion beam exposure mask |
| US07/107,424 US4902897A (en) | 1986-10-13 | 1987-10-13 | Ion beam gun and ion beam exposure device |
| KR1019920019579A KR930001433B1 (en) | 1986-10-13 | 1992-10-23 | Ion-beam gun |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61277483A JPS63129623A (en) | 1986-11-20 | 1986-11-20 | Ion beam exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63129623A true JPS63129623A (en) | 1988-06-02 |
Family
ID=17584222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61277483A Pending JPS63129623A (en) | 1986-10-13 | 1986-11-20 | Ion beam exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63129623A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03295181A (en) * | 1990-04-12 | 1991-12-26 | Amp Japan Ltd | Module type connector |
| JPH0782098A (en) * | 1993-06-30 | 1995-03-28 | Agency Of Ind Science & Technol | Silicon substrate having silicon carbide-embedded layer and its production |
-
1986
- 1986-11-20 JP JP61277483A patent/JPS63129623A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03295181A (en) * | 1990-04-12 | 1991-12-26 | Amp Japan Ltd | Module type connector |
| JPH0782098A (en) * | 1993-06-30 | 1995-03-28 | Agency Of Ind Science & Technol | Silicon substrate having silicon carbide-embedded layer and its production |
| JP2615406B2 (en) * | 1993-06-30 | 1997-05-28 | 工業技術院長 | Method for manufacturing silicon substrate having silicon carbide buried layer |
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