JPS63126769A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPS63126769A JPS63126769A JP61271806A JP27180686A JPS63126769A JP S63126769 A JPS63126769 A JP S63126769A JP 61271806 A JP61271806 A JP 61271806A JP 27180686 A JP27180686 A JP 27180686A JP S63126769 A JPS63126769 A JP S63126769A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- solder
- thermal head
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 12
- 229910018054 Ni-Cu Inorganic materials 0.000 claims abstract description 11
- 229910018481 Ni—Cu Inorganic materials 0.000 claims abstract description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 229910018557 Si O Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 37
- 239000010408 film Substances 0.000 abstract description 28
- 238000000034 method Methods 0.000 abstract description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 54
- 238000009792 diffusion process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 210000003128 head Anatomy 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018106 Ni—C Inorganic materials 0.000 description 1
- 229910000711 U alloy Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ファクシミリなどに使用されるプリンタのサ
ーマルヘッドの構成に係り、特に、外部接続用端子メタ
ライズの構造を持つ夛−マルヘッドに関するものである
。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to the configuration of a thermal head for a printer used for facsimiles, etc., and particularly relates to a multiple thermal head having a structure of metalized external connection terminals. be.
従来技術におけるサーマルヘッドの構造は、第４図に示
すように、高抵抗基材１上に形成された第１層配線２と
、絶縁層３と、該Ｐ！縁縁上上設けられ、接続用スルー
ホールを介して上記第１層配線２に接続されて上層とな
る第２層配線４とが形−成された多層配線構造から構成
されている。たとえば、日立評論ＶＯＬ６７、陽７ （
１９８５）「ｃＭＯｓドライバ搭載形搭載縮高精細感熱
記録ヘッド載されているヘッドの場合には、第４図に示
した第１層配線２としてＣｒ−Ｓｉ−０抵抗体、Ｃｒ／
Ａｊ！から成る２層配線構造で、絶縁層３としては５ｉ
（ｈ ／ＰＩＱ（ポリイミド系樹脂）の積層膜、第２層
配線４としてＣｒ ／ Ｃｕ ／ Ａｕの３層構造を採
用している。As shown in FIG. 4, the structure of a conventional thermal head includes a first layer wiring 2 formed on a high-resistance base material 1, an insulating layer 3, and the P! It has a multilayer wiring structure in which a second layer wiring 4, which is an upper layer, is provided on the edge and is connected to the first layer wiring 2 through a connection through hole. For example, Hitachi Review VOL67, Yang 7 (
1985) "In the case of a head equipped with a cMOS driver-equipped reduced-definition thermal recording head, a Cr-Si-0 resistor, Cr/
Aj! It has a two-layer wiring structure consisting of 5i as the insulating layer 3.
(A laminated film of h/PIQ (polyimide resin) and a three-layer structure of Cr/Cu/Au are used as the second layer wiring 4.
ここで、基板上に接続実装されるドライバＩＣ５の接続
用ペデスタルＰの構造も、第２層配線４１、と共通の構
造で、下層からＣｒ ４１ 、 Ｃｕ ４２． Ａｕ
４３゛玩各層からなる。また、へ・ドと外部回路を接続
する引出し端子（図示せず）の構造も同様である。Here, the structure of the connection pedestal P of the driver IC 5 that is connected and mounted on the board is also the same structure as the second layer wiring 41, and is made of Cr 41 , Cu 42 . Au
It consists of 43 layers. Further, the structure of a lead-out terminal (not shown) for connecting the head and the external circuit is also similar.
これらの膜構造は、はんだ溶融接続のための接着金属４
１（主としてＣｒ ）と、拡散防止用金属４２（たとえ
ばＣｕ、Ｎｉなど）と、はんだ濡れ性および酸化防止用
金属４５（主としてＡｕ ）とで共通に構成することで
工数の低減を図っている。These membrane structures are suitable for bonding metal 4 for solder fusion connections.
1 (mainly Cr), a diffusion prevention metal 42 (for example, Cu, Ni, etc.), and a solder wettability and oxidation prevention metal 45 (mainly Au), thereby reducing the number of man-hours.
この中で拡散防止用金属４２の性質によって膜厚岬はん
だ濡れ性が決まる。たとえば、Ｃｕは、１回のはんだ接
続で１〜数μｍ程度が溶融はんだ中に溶は込むため、少
なくともこの厚さ以上の膜厚が必要である。不良素子の
再接続を繰返し行なう場合には、はんだの溶融回数に応
じてはんだ中にＣｕが溶は込む。したがって拡散防止用
金属の厚さは、１回のはんだ溶融接続で溶は込む厚さの
３〜４倍の厚さとなり、Ｃｕの場合には５゛〜４μｍ以
上の膜厚が必要となる。Among these, the film thickness and solder wettability are determined by the properties of the diffusion preventing metal 42. For example, Cu melts into the molten solder in an amount of about 1 to several micrometers during one solder connection, so the film needs to have a film thickness of at least this thickness or more. When reconnecting a defective element repeatedly, Cu melts into the solder depending on the number of times the solder melts. Therefore, the thickness of the diffusion preventing metal is three to four times the thickness that is melted in one solder fusion connection, and in the case of Cu, a film thickness of 5 to 4 μm or more is required.
このよう罠、厚い金属層を基板上に形成した場合、内部
応力による基板の破機や、膜自身の割れ−を発生し易い
。また、Ｃｕ以外の材料では、必要膜・ ブー
、声はＣｕの数分の１となるが、はんだ濡れ性が悪く°
なるため接続不良が起こる。When such a thick metal layer is formed on a substrate, it is easy for the substrate to break due to internal stress or for the film itself to crack. In addition, with materials other than Cu, the required film thickness is a fraction of that of Cu, but the solder wettability is poor.
This will cause a connection failure.
上記従来技術によるサーマルヘッドの構成では、はんだ
接続を安定に行なうため、その構成材料の膜厚を非常に
厚く形成する必要があるため、はんだ接続の障害の一つ
になっており、製造コストを高めるという問題があった
。In the configuration of the thermal head according to the above-mentioned conventional technology, in order to make a stable solder connection, it is necessary to form a very thick film of the constituent material, which is one of the obstacles to solder connection and reduces manufacturing costs. There was a problem with raising it.
本発明の目的は、はんだ濡れ性が良好で、膜厚が薄く形
成でき、同時に配線層と外部引出し端子との共用化が可
能な新規な接続用ペデスタル材料を提供することにより
、サーマルヘッドの接続信頼性を向上させると同時に製
造コストを低減すること罠ある。An object of the present invention is to provide a new connection pedestal material that has good solder wettability, can be formed with a thin film thickness, and at the same time can be used as a wiring layer and an external lead terminal. The trick is to improve reliability and reduce manufacturing costs at the same time.
上記目的は、溶融はんだに対する濡れ性が良好ではんだ
成分金属（たとえばＳｎ、 Ｐｂ、 Ｉｎ等）の拡散速
度の遅い材料を用いることにより達成される。。The above object is achieved by using a material that has good wettability with molten solder and a slow diffusion rate of solder component metals (eg, Sn, Pb, In, etc.). .
すなわち、本発・明は、高抵抗基材上に、発熱抵抗素子
を構成する発熱抵抗体層および該抵抗体層に接続される
配線用金属層を含む第１層配線と、該第１層配線金属層
上設けられる絶縁層と、該絶縁層上に設けられ、上記第
１層配線にスルーホールを介して接続する第２層配線と
で構成した多層配線構造を有するサーマルヘッドにおい
て、上記第２層配線を、上記第１層配線との接着用金属
層を構成するＣｒと、配線用金属層を構成するＮｉ−Ｃ
ｕ合金とを積層して形成することを特徴とす−る。That is, the present invention provides a first layer wiring including a heating resistor layer constituting a heating resistor element and a wiring metal layer connected to the resistor layer, on a high resistance base material, and the first layer wiring. In a thermal head having a multilayer wiring structure including an insulating layer provided on the wiring metal layer and a second layer wiring provided on the insulating layer and connected to the first layer wiring via a through hole, The two-layer wiring is made of Cr that constitutes a metal layer for adhesion to the first layer wiring, and Ni-C that constitutes a metal layer for wiring.
It is characterized by being formed by laminating U alloy.
拡散速度の遅い電極材料としてＡＪ、 Ｃｕ、 Ｎｉな
どがある。Ｍの場合には、強固な酸化層を形成するため
、大気中では、はんだ濡れ性が悪い。また、Ｃｕは、酸
化に弱く、熱工程に細心の注意を要し、はんだの拡散速
度が比較的速く、電極の膜厚を厚く形成する必要がある
。一方、Ｎｉは、拡散速度は小さいが、はんだ濡れ性が
小さく、はんだ付は性に問題点がある。したがって端子
の材料は、対象忙よって最も条件に適合する材料を選定
する必要があるが、はんだ付けの種々の条件を満たす単
体の材料は見当たらないのが現状であった。Electrode materials with slow diffusion rates include AJ, Cu, and Ni. In the case of M, since a strong oxide layer is formed, solder wettability is poor in the atmosphere. Further, Cu is susceptible to oxidation, requires careful attention to thermal processing, has a relatively fast solder diffusion rate, and requires a thick electrode film. On the other hand, although Ni has a low diffusion rate, it has low solder wettability and has problems with soldering properties. Therefore, it is necessary to select the material for the terminal that most satisfies the conditions depending on the subject matter, but at present no single material has been found that satisfies the various soldering conditions.
そこで、電極材料として種々の合金について検討した結
果、脆い中間層（金属間化合物）の生成がな（、はんだ
成分との脆い化合物も生成せず、濡れ性が良好で、耐食
性に優れる合金材料として新規なＮ １−Ｃｕ合金を見
出した。Therefore, as a result of studying various alloys as electrode materials, we found that they are alloy materials that do not form brittle intermediate layers (intermetallic compounds) (and do not form brittle compounds with solder components, have good wettability, and have excellent corrosion resistance). We have discovered a new N1-Cu alloy.
本発明は、従来技術における接続端子および配線メタラ
イズＣｒ ／ Ｃｕ ／ Ａｕの構成に代わる材料構成
として、Ｃｒ ／ Ｎｉ−Ｃｕの積層膜ではんだ接続層
としてＮ １−Ｃｕ合金を適用することにより、耐食性
が向上し、３００〜３５０℃程度の大気中においても酸
化の進行は非常に遅く、プロセス上の問題点は特にない
。これはＮｉの酸化物から成る薄い被膜が表面を覆うた
めであり、はんだ接続時に希硫酸溶液に浸漬することに
より容易に除去することが可能であり清浄な表面を得る
ことができる。したがってＮ １−Ｃｕ合金は従来のＣ
ｕと同等のはんだ濡れ性を有し接続上の問題点はない。The present invention improves corrosion resistance by applying N1-Cu alloy as a solder connection layer in a Cr/Ni-Cu laminated film as a material composition that replaces the Cr/Cu/Au composition of connection terminals and wiring metallization in the prior art. The oxidation progresses very slowly even in the atmosphere at about 300 to 350°C, and there are no particular problems in the process. This is because the surface is covered with a thin film made of Ni oxide, which can be easily removed by immersion in a dilute sulfuric acid solution during soldering, resulting in a clean surface. Therefore, the N1-Cu alloy is
It has the same solder wettability as u and there are no connection problems.
はんだの拡散速度を求めた結果を第２図に示す。Figure 2 shows the results of determining the solder diffusion rate.
所定の膜厚を有する金属膜中なはんだが拡散する時間を
求めたものであり、はんだは拡散速度の速い６３ Ｓｎ
／ ３７ Ｐｂ組成の場合である。たとえば、２５０
℃の条件ではＮｉとＣｕの合金の拡散速度はＣｕ単体に
比べて約２桁の差があり、Ｎｉ −Ｃｕ合金で電極を構
成すればＣｕの場合の膜厚に対して薄い膜厚で同等の条
件となる。したがって、サーマルヘッドの製造には著し
い効果があり、構成膜の成膜時間の短縮、またパターン
形成におけるフォトエツチング処理も短時間でかつ高精
度なパターン形成が可能な利点を有する。This is the time taken for solder to diffuse in a metal film with a predetermined film thickness.
/37 This is the case of Pb composition. For example, 250
Under conditions of ℃, the diffusion rate of Ni and Cu alloy is about two orders of magnitude different from that of Cu alone, and if the electrode is made of Ni-Cu alloy, it can be made with a thinner film thickness than that of Cu. The conditions are as follows. Therefore, it has a significant effect on the manufacture of thermal heads, and has the advantage of shortening the time required to form the constituent films, and enabling highly accurate pattern formation in a short period of time in the photo-etching process used in pattern formation.
以下、本発明の実施例を第１図および第３図を参照して
説明する。なお、第３図は本発明のサーマルヘッドの断
面構造図である。Embodiments of the present invention will be described below with reference to FIGS. 1 and 3. Note that FIG. 3 is a cross-sectional structural diagram of the thermal head of the present invention.
サーマルヘッドは、アルミナセラミックなどの高抵抗基
材１上に、該基材１上に被着された発熱抵抗体層２１、
接着通電用金属層２２、および、配線用金属層２３を所
定の形状にフォトエツチングによって加工してなる第１
層配線２と、該第１層配線２上に層間絶縁層５とを形成
し、かつ、層間絶縁層３上に、特定の接続用スルーホー
ル６を介して第１層配線２と接続され、上層となる第２
層配線４を形成し、さらに、ヘッドを制御駆動するため
のドライバＩＣ５をはんだ溶融接続法によって実装した
構造を有している。The thermal head includes a high-resistance base material 1 such as alumina ceramic, a heating resistor layer 21 deposited on the base material 1,
A first layer formed by processing the adhesive energizing metal layer 22 and the wiring metal layer 23 into a predetermined shape by photoetching.
A layer wiring 2 and an interlayer insulating layer 5 are formed on the first layer wiring 2, and are connected to the first layer wiring 2 through a specific connection through hole 6 on the interlayer insulation layer 3, The second layer is the upper layer.
It has a structure in which layered wiring 4 is formed and a driver IC 5 for controlling and driving the head is further mounted by a solder fusion connection method.
ここで、第１層配線２は、発熱抵抗体層２１として、ｃ
ｒ−Ｓｉ−０系の抵抗体を約８０ ＤＡ、接着通電用金
属２２としてＣｒ １０００Ａ、さらに、配線用金属２
３としてＭ１μｍを各々積層し、第１層配線２としてパ
ターンを形成する。Here, the first layer wiring 2 is c
r-Si-0 series resistor of about 80 DA, adhesive energizing metal 22 of Cr 1000A, and wiring metal 2
3, M1 .mu.m thick wires are laminated, and a pattern is formed as the first layer wiring 2.
眉間絶縁層３としては、発熱抵抗体の保護膜を兼用する
目的でＳｉＯ２を約３μ島、さらに、発熱抵抗体の形成
される領域以外には、ポリイミド系樹脂のプレポリマー
溶液を回転塗布法で約２μＳ（熱処理後パターン形成）
形成した２層構成の絶縁膜である。The insulating layer 3 between the eyebrows is made of approximately 3 μm of SiO2 for the purpose of also serving as a protective film for the heating resistor, and a prepolymer solution of polyimide resin is coated by spin coating in areas other than the area where the heating resistor is formed. Approximately 2 μS (pattern formation after heat treatment)
This is an insulating film having a two-layer structure.
この層間絶縁膜３の特定の場所沈設けられる第２層配線
４は、接続用スルーホール６を介して第１７ｆｔ配線２
と接続する接着用金層４１としてＣｒを１００ＯＡ、配
線用金属４４としてＮｉ −Ｃｕ合金を５００ＯＡ形成
した構造である。第２層配線４の構造は、外部引出し端
子部（図示せず）、および、ドライバＩ Ｃｓを接続実
装するための接続用ペデスタル部Ｐと同一の構造を有し
ている。The second layer wiring 4, which is deposited at a specific location in the interlayer insulating film 3, is connected to the 17ft wiring 2 through the connection through hole 6.
In this structure, 100 OA of Cr is formed as the adhesion gold layer 41 connected to the metal layer 41, and 500 OA of Ni--Cu alloy is formed as the wiring metal 44. The structure of the second layer wiring 4 is the same as that of an external lead terminal section (not shown) and a connection pedestal section P for connecting and mounting the driver ICs.
これらのサーマルヘッドを構成する各金属膜、Ｓｉ０２
絶縁膜の形成にはスパッタリング等の真空成膜法を適用
した。Ｎｉ −Ｃｕ合金の形成におゆるマグネトロン方
式での放電特性は、第４図の通りで、得られた合金膜組
成は６上５％ Ｎｉでありターゲット組成との違いはｔ
５％であった。Each metal film constituting these thermal heads, Si02
Vacuum deposition methods such as sputtering were applied to form the insulating film. The discharge characteristics of the magnetron method used to form the Ni-Cu alloy are shown in Figure 4, and the alloy film composition obtained was 6% and 5% Ni, and the difference from the target composition was t.
It was 5%.
以上の構造を有するサーマルヘッドに接続されるドライ
バＩＣ５の接続においては、あらかじめＮｊ−Ｃｕ合金
膜上の極薄な酸化層を除去する目的で希硫酸水溶液によ
る前処理を施し、はんだ溶融接読方によって実装した。When connecting the driver IC 5 to be connected to the thermal head having the above structure, pretreatment with a dilute sulfuric acid aqueous solution is performed in advance in order to remove the extremely thin oxide layer on the Nj-Cu alloy film, and the solder melting method is used. Implemented by.
この際のはんだは、ドライバＩＣチップ側からの供給で
、 Ｎｉ−Ｃｕ合金膜面への濡れ性は何ら問題はなかっ
た。The solder at this time was supplied from the driver IC chip side, and there was no problem in wettability to the Ni-Cu alloy film surface.
以上の工程を経てサーマルヘッドが完成される。The thermal head is completed through the above steps.
必要によっては配線部およびドライバＩＣ接続部を保護
するため有機あるいは無機材質の保護膜を塗布形成して
もよい。If necessary, a protective film of organic or inorganic material may be applied and formed to protect the wiring portion and the driver IC connection portion.
本実施例で示すようなはんだ接続用のドライバＩＣｓは
、サーマルヘッド上に轄１０個実装される。Ten driver ICs for solder connection as shown in this embodiment are mounted on the thermal head.
この中には特異に不良素子が含まれる可能性があり、こ
の際には素子の変換が必要となる。従来では、はんだ拡
散防止用金属としてＣｕを約３〜４μ隅形成する必要が
あったが、本実施例で適用したＮｉ−Ｃｕ合金では約１
０分の１の厚さでドライバＩＣな−２回交換しても何ら
問題を発生しなかった。There is a possibility that a uniquely defective element is included in this, and in this case, it is necessary to convert the element. Conventionally, it was necessary to form Cu as a metal for preventing solder diffusion at approximately 3 to 4 μm corners, but with the Ni-Cu alloy used in this example, approximately 1 μm
The driver IC was 1/0th the thickness and I had no problems even after replacing it twice.
本発明によれば、はんだ接続を行なう接続用金属の膜厚
が従来の数分の１〜数十分の１以下でよく、サーマルヘ
ッドのはんだ接続が容易となる上、。According to the present invention, the film thickness of the connection metal used for solder connection can be reduced to one to several tenths of the conventional thickness, and the solder connection of the thermal head is facilitated.
ヘッドの製造コストも大幅に低減できる。また、はんだ
濡れ性も良好で、特に耐食性にも優れる利点も有してい
るため、はんだ接続部、配線の信頼性を向上できる。The manufacturing cost of the head can also be significantly reduced. Furthermore, it has the advantage of good solder wettability and particularly excellent corrosion resistance, so the reliability of solder joints and wiring can be improved.
第１図は本発明におけるサーマルヘッドの一実施例のド
ライバＩＣ接続部および配線層を示す断面構造図、第２
図は、はんだ拡散防止金属中のはんだ拡散性を示す特性
図、第３図は、Ｎｉ−Ｃｕ合金膜の形成条件を示す特性
図、第４図は従来技術におけるサーマルヘッドの断面構
造図である。
１・・・高抵抗基材、２・・・第１層配線、６・・・絶
縁層、４・・・第２層配線、５・・・ドライバＩＣ１６
・・・スルー塔 ｌ 図
々
第 ２ 図
第３図FIG. 1 is a cross-sectional structural diagram showing the driver IC connection part and wiring layer of an embodiment of the thermal head according to the present invention, and FIG.
The figure is a characteristic diagram showing the solder diffusivity in the solder diffusion prevention metal, Figure 3 is a characteristic diagram showing the formation conditions of the Ni-Cu alloy film, and Figure 4 is a cross-sectional structural diagram of a thermal head in the conventional technology. . DESCRIPTION OF SYMBOLS 1... High resistance base material, 2... First layer wiring, 6... Insulating layer, 4... Second layer wiring, 5... Driver IC16
...Through tower l Figure 2 Figure 3
Claims (1)
体層および該抵抗体層に接続される配線用金属層を含む
第１層配線と、該第１層配線金属層上設けられる絶縁層
と、該絶縁層上に設けられ、上記第１層配線にスルーホ
ールを介して接続する第２層配線とで構成した多層配線
構造を有するサーマルヘッドにおいて、 上記第２層配線を、上記第１層配線との接着用金属層を
構成するＣｒと、配線用金属層を構成するＮｉ−Ｃｕ合
金とを積層して形成することを特徴とするサーマルヘッ
ド。 ２、上記第１層配線層を、発熱抵抗体層を構成するＣｒ
−Ｓｉ−Ｏ系抵抗体と、接着通電用金属層を構成するＣ
ｒと、配線用金属層を構成するＡｌとを積層して形成し
、 かつ、上記絶縁層を、上記第１配線層の発熱抵抗体上に
ＳｉＯ＿２、他の領域にポリイミド樹脂を各々被着して
形成した、特許請求の範囲第１項記載のサーマルヘッド
。 ３、接続用ペデスタルおよび／または外部接続端子部を
、上記第１層配線との接着用金属層を構成するＣｒと、
配線用金属層を構成するＮｉ−Ｃｕ合金とを積層して形
成した特許請求の範囲第１項または第２項記載のサーマ
ルヘッド。[Claims] 1. A first layer wiring including a heating resistor layer constituting a heating resistor element and a wiring metal layer connected to the resistor layer, on a high-resistance base material, and the first layer In a thermal head having a multilayer wiring structure including an insulating layer provided on the wiring metal layer and a second layer wiring provided on the insulating layer and connected to the first layer wiring via a through hole, A thermal head characterized in that the two-layer wiring is formed by laminating Cr constituting a metal layer for adhesion to the first layer wiring and a Ni-Cu alloy constituting a metal layer for wiring. 2. The first wiring layer is made of Cr that constitutes the heating resistor layer.
-C constituting the Si-O-based resistor and the adhesive current-carrying metal layer
r and Al constituting the wiring metal layer are laminated, and the insulating layer is formed by depositing SiO_2 on the heating resistor of the first wiring layer and polyimide resin on the other regions. A thermal head according to claim 1, which is formed by: 3. The connection pedestal and/or the external connection terminal portion is made of Cr that constitutes a metal layer for adhesion to the first layer wiring,
The thermal head according to claim 1 or 2, which is formed by laminating a Ni--Cu alloy constituting a wiring metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271806A JPS63126769A (en) | 1986-11-17 | 1986-11-17 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271806A JPS63126769A (en) | 1986-11-17 | 1986-11-17 | Thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63126769A true JPS63126769A (en) | 1988-05-30 |
Family
ID=17505108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61271806A Pending JPS63126769A (en) | 1986-11-17 | 1986-11-17 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63126769A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137942A (en) * | 1988-11-18 | 1990-05-28 | Casio Comput Co Ltd | Thermal head and manufacture thereof |
-
1986
- 1986-11-17 JP JP61271806A patent/JPS63126769A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137942A (en) * | 1988-11-18 | 1990-05-28 | Casio Comput Co Ltd | Thermal head and manufacture thereof |
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