JPH068053B2 - Thermal head - Google Patents

Thermal head

Info

Publication number
JPH068053B2
JPH068053B2 JP61219327A JP21932786A JPH068053B2 JP H068053 B2 JPH068053 B2 JP H068053B2 JP 61219327 A JP61219327 A JP 61219327A JP 21932786 A JP21932786 A JP 21932786A JP H068053 B2 JPH068053 B2 JP H068053B2
Authority
JP
Japan
Prior art keywords
solder
layer
electrode
soldering
thermal head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61219327A
Other languages
Japanese (ja)
Other versions
JPS6374657A (en
Inventor
常彰 亀井
康則 成塚
佳治 森
守 森田
明 薮下
英男 高橋
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP61219327A priority Critical patent/JPH068053B2/en
Publication of JPS6374657A publication Critical patent/JPS6374657A/en
Publication of JPH068053B2 publication Critical patent/JPH068053B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, e.g. INK-JET PRINTERS, THERMAL PRINTERS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335Structure of thermal heads
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/36Material effects
    • H01L2924/365Metallurgical effects
    • H01L2924/3651Formation of intermetallics

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film type thermal head, and more particularly to a thermal head improved in soldering work during manufacturing and repair.

[Conventional technology]

As shown in FIG. 1, an electrode for solder connection of a conventional thermal head has an adhesion metal 2 (mainly chromium) and a diffusion prevention metal 3 (eg Cu, Cu + Cr, Ni, Pd, Al) on the wiring layer. , Rh
Etc.) were sequentially laminated, and the electrode thickness and solder wettability were determined respectively as needed. For example, since Cu melts into the molten solder in a range of 1 to several μm in one soldering, the Cu layer thickness of at least this thickness is required. Further, when the solder connection needs to be redone, solder melting occurs twice, so that the thickness of the Cu layer must be at least 3 to 4 μm or more. When a metal layer having a large film thickness is formed on the substrate of the thermal head as described above, the substrate is easily broken due to internal stress or the metal layer itself is easily cracked. Further, when the protective layer is formed on the electrodes, defects due to the step between the substrate and the electrodes are likely to occur. There is a material other than Cu that requires a fraction of the thickness of Cu as a diffusion prevention metal, but poor solder wettability may cause poor connection or Pd.
And Ph are very expensive.

To solve the above problems, as described in JP-A-57-235035, Cu, Ni, and Sn are sequentially formed on a wire, and the problem of Ni wettability is improved by Sn layer coating. There is an example. However, in this case, there are problems such as an increase in the number of steps and a decrease in reliability because a brittle alloy layer is formed with the solder component metal.

Further, an IC or LSI for driving the heating resistor element is mounted on the thermal head, and when connecting these to a wiring specific portion on the substrate, it is necessary to simultaneously connect a large number of connection points. In this case, if the amount of solder at each connection point is made equal and the distance between each connection point and the LSI mounting board connected to each connection point is not evenly maintained, a defective connection may occur. A countermeasure against this is to make the thickness of the molten solder uniform at each connection point, but it is necessary to regulate the individual solder wetting area so that the solder wetting does not spread unnecessarily at each connection point.

[Problems to be solved by the invention]

In the thermal head according to the above-mentioned conventional technique, no consideration is given to the soldering work surface of the electrode terminal or the pad portion,
Although there is a problem, it is necessary to form the diffusion preventing layer in the soldering electrode portion to be very thick, and the manufacturing cost is accordingly high.

An object of the present invention is to provide a thermal head which has an improved soldering workability by using an electrode material which has good solderability and can be thin as an electrode. Still another object is to provide a material for a solder wetting prevention dam for regulating a solder wetting portion and a method for forming the same when performing a soldering operation on an electrode surface having good solderability. .

[Means for solving problems]

The above object is achieved by using, as an electrode or a part of the electrode, a metal having a good wettability with respect to the molten solder and a low diffusion rate of the solder component metal (Sn, Pb, In, etc.). Since no single metal material satisfying all the conditions for soldering was found, various alloy materials were examined. As a result, no brittle intermediate layer (intermetallic compound) was generated, no brittle intermetallic compound was generated for the main component metals (Sn, Pb, In, etc.) of the solder, and the wettability to the solder was good. The Ni-Cu alloy was found to satisfy various conditions such as that it has excellent corrosion resistance and that it is easy to form a shape as an electrode, and it was found in the soldering electrode terminals or pads of the thermal head. Ni-C
I decided to use the u alloy layer.

In addition, another purpose is to form a dam of a predetermined shape made of a heat resistant resin or an inorganic oxide / nitride at the peripheral portion of the soldering point of the terminal or pad part using the above Ni-Cu alloy material. Can be achieved.

[Action]

Corrosion resistance is improved by the Ni-Cu alloy layer, and the progress of oxidation is extremely slow even in the atmosphere of 300 to 350 ° C, which causes no particular problem in the normal manufacturing process and soldering work. When soldering, use flux to get wet instantly,
Good solder wettability similar to Cu electrode. On the other hand, 63 Sn / 37
As a result of investigating the diffusion rate of solder using Pb solder, Cu
It was found that it was about 1/100 compared to the single substance. Therefore, when the solder connection is performed at 250 ° C., the required thickness of the Ni-Cu alloy electrode is a fraction of that of the Cu electrode, so that the film forming time can be greatly shortened. Further, the pattern accuracy is improved because the subsequent photo etching process can be completed in a short time.

Further, by forming a solder wetting prevention dam so as to surround the solder connection point, the wetting area at the time of soldering is regulated, and simultaneous operation of a large number of solder connection points can be performed smoothly.

〔Example〕

 An embodiment will be described below with reference to FIGS. 2 and 3.

Example 1 In FIG. 2, a Cr-Si-O-based heating resistor layer 6 is formed on an insulating substrate 5 by a sputtering method to a film thickness of about 800 Å.
Continued to have a film thickness of 1000Å
The Cr layer 2 was formed. Cu is used as the wiring layer 1 on the Cr layer by 0.5
˜2 μm film is formed, and the Ni—Cu alloy layer 3 according to the present invention is formed thereon.
Of 0.5 to 0.5 μm was formed by magnetron sputtering. The target used was a Ni-Cu alloy material, and the difference between the composition of the deposited alloy film and the target composition was 1.5% or less.

Next, pattern formation was sequentially performed from the upper layer by a photo etching method. The wiring layer 1, the conducting electrode 2 and the resistor layer 6 are etched by a conventional technique. The etching of the Ni-Cu layer 3 according to the present invention can be performed with any one of ferric chloride solution, copper chloride solution, ammonium persulfate solution, iodine + ammonium iodide solution and the like. Since the above-mentioned etching solution also dissolves the Cu wiring layer, actually, the Ni-Cu layer 3 and the wiring layer 1 were simultaneously and continuously etched. In this way, the heating resistor pattern,
After forming the wiring pattern and the electrode pattern for solder connection,
A solder wetting prevention layer 7 was formed on the Ni-Cu layer 3. Ni-Cu
Masking the soldered portion on the layer and the exposed portion of the heating resistor layer 6 and spin-coating a polyimide varnish,
A heat resistant polyimide solder wetting prevention layer 7 was formed by preliminary drying and heat treatment. Next, a protective layer 8 is formed on the exposed portion of the heating resistor layer 6 by mask vapor deposition or sputter vapor deposition.
Was formed.

Embodiment 2 FIG. 3 shows an example in which the solder wetting prevention layer is simultaneously formed using the same material as the protective layer 8 of the exposed portion of the heating resistor layer 6 to simplify the process. After forming a predetermined pattern by the same method as described in Example 1, a predetermined masking is applied to the solder connection point, and the exposed portion of the heating resistor and the Ni-Cu wiring layer are covered with SiO 2 , Al 2 by a sputtering method. O 3, Ta 2 O 5, Si 3 N 4, AlN, was formed alone or protective layer and wear layer composed of two or more and the solder wetting prevention layer such as SiC.

The solder connection portions (electrode terminals and pad portions) of the thermal heads produced by the above-described two examples had good solder wettability and were capable of withstanding several soldering operations. In addition, it was confirmed that the solder wetting area and the required amount of solder were regulated by forming the solder wetting prevention layer in the peripheral part of the solder connection part in a dam shape, and no connection failure occurred in the solder connection work of multiple points at the same time. It was

〔The invention's effect〕

According to the present invention, the thickness of the electrode to be soldered is less than a fraction of the conventional thickness, so that the soldering of the thermal head becomes easy and the manufacturing cost can be reduced. Further, the solder connection strength and the solder wettability are more excellent than those of the conventional electrode material, and the reliability of the solder connection portion is improved.

Further, by forming the solder wetting prevention dam according to the present invention, the solder wetting portion and the required amount of solder during the soldering work are regulated, so that the simultaneous connection work of a large number of points and the replacement work of the driver IC can be performed more smoothly. It was

[Brief description of drawings]

FIG. 1 is a sectional view of a conventional soldering electrode, and FIGS. 2 and 3 are transverse sectional views of a thermal head for explaining a solder wetting prevention layer according to the present invention. DESCRIPTION OF SYMBOLS 1 ... Wiring layer 2 ... Adhesion / current-carrying electrode 3 ... Diffusion prevention metal layer 4 ... Solder 5 ... Substrate 6 ... Heating resistor layer ... Solder wetting prevention layer 8 ... Protective layer 9 ... Drive IC 10 ... External extraction electrode

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Akira Yabushita, 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa, Ltd.Institute of Industrial Science and Technology, Hitachi, Ltd. (72) Tsuneaki Kamei, 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa (72) Inventor, Mamoru Morita, 216 Totsuka-cho, Totsuka-ku, Yokohama-shi, Kanagawa, Ltd. (56) Reference, Japanese Patent Laid-Open No. 52-051569 (JP, A) JP 61-135146 (JP, A) JP 59-2329 (JP, A) JP 54-016388 (JP, B2)

Claims (2)

[Claims]
1. A thermal head comprising a substrate on which predetermined heating resistor layers, conductor layers, current-carrying electrodes, etc. are provided. Ni (nickel) and Cu are provided at least in terminals or pads for soldering. A thermal head characterized in that an alloy layer made of (copper) is formed, and a layer for preventing the spread of solder is formed in a dam shape at the peripheral portion of the soldering location.
2. The thermal according to claim 1, wherein the layer for preventing the spread of the solder is made of a heat resistant resin, an inorganic oxide, an inorganic nitride or an inorganic carbide. head.
JP61219327A 1986-09-19 1986-09-19 Thermal head Expired - Lifetime JPH068053B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61219327A JPH068053B2 (en) 1986-09-19 1986-09-19 Thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61219327A JPH068053B2 (en) 1986-09-19 1986-09-19 Thermal head

Publications (2)

Publication Number Publication Date
JPS6374657A JPS6374657A (en) 1988-04-05
JPH068053B2 true JPH068053B2 (en) 1994-02-02

Family

ID=16733725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61219327A Expired - Lifetime JPH068053B2 (en) 1986-09-19 1986-09-19 Thermal head

Country Status (1)

Country Link
JP (1) JPH068053B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2839600B2 (en) * 1989-12-20 1998-12-16 株式会社日立製作所 Thermal head and method of manufacturing the same
JPH10134869A (en) * 1996-10-30 1998-05-22 Yazaki Corp Terminal material and terminal
US6300678B1 (en) 1997-10-03 2001-10-09 Fujitsu Limited I/O pin having solder dam for connecting substrates
JP3563734B2 (en) * 2002-10-29 2004-09-08 ローム株式会社 Thermal printhead device
JP3836850B2 (en) * 2004-04-28 2006-10-25 ローム株式会社 Thermal print head device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251569A (en) * 1975-10-24 1977-04-25 Hitachi Ltd Method of forming solder flow out preventive dam with polyamide acid sulfon or polyamide acid carboxylic amide
AT357951B (en) * 1977-06-10 1980-08-11 Kernforschungsz Karlsruhe Method for wastewater treatment using a sorption agent
JPS592329A (en) * 1982-06-29 1984-01-07 Hitachi Ltd Manufacture of substrate of semiconductor integrated circuit
JPS61135146A (en) * 1984-12-06 1986-06-23 Toshiba Corp Semiconductor lead frame

Also Published As

Publication number Publication date
JPS6374657A (en) 1988-04-05

Similar Documents

Publication Publication Date Title
US5705857A (en) Capped copper electrical interconnects
US5503286A (en) Electroplated solder terminal
US5977637A (en) Integrated electronic device having flip-chip connection with circuit board
US5583073A (en) Method for producing electroless barrier layer and solder bump on chip
US4104111A (en) Process for manufacturing printed circuit boards
US6015505A (en) Process improvements for titanium-tungsten etching in the presence of electroplated C4's
JP3063161B2 (en) Method of forming solder bump interconnects for solder plated circuit traces
US4808769A (en) Film carrier and bonding method using the film carrier
JP2528617B2 (en) Multilayer interconnect metal structure and method of forming same
US4463059A (en) Layered metal film structures for LSI chip carriers adapted for solder bonding and wire bonding
US5296649A (en) Solder-coated printed circuit board and method of manufacturing the same
US6111321A (en) Ball limiting metalization process for interconnection
CA1189984A (en) Contact structure for securing a semiconductor substrate to a mounting body
EP1032030B1 (en) Flip chip bump bonding
US4005454A (en) Semiconductor device having a solderable contacting coating on its opposite surfaces
US4840924A (en) Method of fabricating a multichip package
EP0074605B1 (en) Method for manufacturing multilayer circuit substrate
KR100762111B1 (en) Semiconductor device
US3663184A (en) Solder bump metallization system using a titanium-nickel barrier layer
CA1236221A (en) Method of manufacturing printed circuit boards
US4772935A (en) Die bonding process
US10354826B2 (en) Fuse in chip design
US6495001B2 (en) Method for manufacturing a metallic composite strip
US4710592A (en) Multilayer wiring substrate with engineering change pads
KR0144805B1 (en) Tin bismuth solder connection having improved high temperature properties and process for forming the same