JPS63125669A - Production of thin amorphous ta-w alloy film - Google Patents
Production of thin amorphous ta-w alloy filmInfo
- Publication number
- JPS63125669A JPS63125669A JP27018586A JP27018586A JPS63125669A JP S63125669 A JPS63125669 A JP S63125669A JP 27018586 A JP27018586 A JP 27018586A JP 27018586 A JP27018586 A JP 27018586A JP S63125669 A JPS63125669 A JP S63125669A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- substrate
- amorphous
- thin film
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910045601 alloy Inorganic materials 0.000 title abstract description 32
- 239000000956 alloy Substances 0.000 title abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000001704 evaporation Methods 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000007738 vacuum evaporation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 15
- 238000002425 crystallisation Methods 0.000 abstract description 14
- 230000008025 crystallization Effects 0.000 abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 12
- 239000007788 liquid Substances 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 229910008423 Si—B Inorganic materials 0.000 abstract description 6
- 238000010894 electron beam technology Methods 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 6
- 239000000498 cooling water Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract description 3
- 229910001080 W alloy Inorganic materials 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000289 melt material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 229910000521 B alloy Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000010791 quenching Methods 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は高い結晶化温度を有する非晶質合金の製造方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method for producing an amorphous alloy having a high crystallization temperature.
（従来の技術）
近年、各種の非晶質材料が開発され、金属材料の分野に
おいて、多くの注目を集めている。これらの合金は、従
来の結晶合金とは異なり、結晶構造を持たない合金であ
り、その性質も従来の金属材料にはみられないものが多
く、機械的性質、耐摩耗性、耐食性、軟磁性、電気的性
質などに優れているため、結晶質金属に代わりうる材料
として、各種の用途開発が行われ、さらに、その用途に
適した材料開発も行われている。これらの合金は、従来
、一般に、単ロール法等の液体急冷法によって作製され
ている。(Prior Art) In recent years, various amorphous materials have been developed and are attracting a lot of attention in the field of metal materials. Unlike conventional crystalline alloys, these alloys do not have a crystalline structure, and many of their properties are not found in conventional metal materials, such as mechanical properties, wear resistance, corrosion resistance, and soft magnetism. Due to its excellent electrical properties, various uses are being developed as a material that can replace crystalline metals, and materials suitable for these uses are also being developed. These alloys have conventionally been generally produced by a liquid quenching method such as a single roll method.
（発明が解決しようとする問題点）
非晶質合金の最大の問題点は、熱的に不安定な点にある
。これは非晶質状態が熱力学的に非平衡な準安定状態で
あるということに由来するもので、非晶質合金の宿命と
もいえることである。即ち、非晶質合金は、一般に、そ
れぞれ特有の結晶化温度を有し、その温度を越えるとよ
り熱的に安定な結晶合金に変化してしまい、非晶質状態
のときにみられた優れた諸特性が全て失われてしまうの
である。この結晶化温度は、材料によって異なるが、一
般に、絶対温度で測定した融点の０．４〜０．６倍程度
の値をとることが知られている。従って、結晶化温度の
高い合金を得るためには、融点の高い合金を非晶質化し
なければならない。(Problems to be Solved by the Invention) The biggest problem with amorphous alloys is that they are thermally unstable. This is due to the fact that the amorphous state is a thermodynamically non-equilibrium metastable state, and can be said to be the fate of amorphous alloys. In other words, each amorphous alloy generally has its own specific crystallization temperature, and when that temperature is exceeded, it changes to a more thermally stable crystalline alloy, and the superiority seen in the amorphous state is lost. All the characteristics that were previously acquired are lost. Although this crystallization temperature varies depending on the material, it is generally known that it takes a value of about 0.4 to 0.6 times the melting point measured in absolute temperature. Therefore, in order to obtain an alloy with a high crystallization temperature, an alloy with a high melting point must be made amorphous.
Ｔａ −Ｓｉ −Ｂ合金は、融点が約２３００°Ｃ以上
ときわめて高い。このため液体急冷法によって作製され
たＴａ −Ｓｉ −Ｂ系非晶質合金は、その結晶化温度
が８００°Ｃ〜９６０°Ｃと非常に高く、非晶質合金の
問題点を大幅に改善することが可能となった（特願昭６
１−０１２３８５号）。さらに、このＴａ −Ｓｉ −
Ｂ系非晶質合金は、一般の非晶質合金に特有の高強度、
高硬度などの優れた機械的性質を有しているために、例
えば、耐摩耗性材料、および、温度上昇を伴う電極用材
料などへの応用が考えられる。The Ta-Si-B alloy has an extremely high melting point of about 2300°C or higher. Therefore, the Ta-Si-B amorphous alloy produced by the liquid quenching method has a very high crystallization temperature of 800°C to 960°C, which greatly improves the problems of amorphous alloys. It became possible to
No. 1-012385). Furthermore, this Ta −Si −
B-based amorphous alloys have the high strength characteristic of general amorphous alloys,
Because it has excellent mechanical properties such as high hardness, it can be applied to, for example, wear-resistant materials and electrode materials that are subject to temperature increases.
しかしながら、実際に前記Ｔａ −Ｓｉ −Ｂ系非晶質
合金を高温環境下で使用する場合には、経時変化が問題
となってくるために、使用温度範囲は最高６００°Ｃ程
度に限定されてしまう。However, when the Ta-Si-B amorphous alloy is actually used in a high-temperature environment, aging becomes a problem, so the operating temperature range is limited to a maximum of about 600°C. Put it away.
さらに、液体急冷法によって作製されるＴａ −Ｓｉ
−Ｂ系非晶質合金は、その形状が幅数ｍ、ｍ〜数ｃｍの
リボン状であるために、広い面積を有する非晶質合金を
得ることができないという問題点があった。さらに、あ
る物質の上に、前記非晶質合金を薄膜状で形成すること
も、従来の液体急冷法ではできなかった。Furthermore, Ta-Si produced by liquid quenching method
-B type amorphous alloys have a ribbon-like shape with a width of several meters or meters to several centimeters, so there is a problem that it is impossible to obtain an amorphous alloy with a wide area. Furthermore, it has not been possible to form the amorphous alloy in the form of a thin film on a certain substance using conventional liquid quenching methods.
本発明は、このような従来技術の問題点を解決して、高
い結晶化温度を有し、かつ、機械的特性、耐食性等にす
ぐれたＴａ−Ｗ系非晶質合金薄膜の製造方法を提供する
ことを目的とする。The present invention solves the problems of the prior art and provides a method for producing a Ta-W amorphous alloy thin film that has a high crystallization temperature and has excellent mechanical properties, corrosion resistance, etc. The purpose is to
（問題点を解決するための手段）
本発明は、（Ｔａｌ−ｘＷｘ）１ ｙ（Ｓｉ１−ｕＢｕ
）ｙなる式で表され、ｘ＝０．０１〜１． ｙ＝０．１
〜０．４． ｕ＝０．ｏｌ−０，９９である合金を、真
空中において、金属を加熱溶解し、金属原子を蒸発させ
ることによって、基板上に付着させ、非晶質薄膜を形成
することを特徴とするＴａ−Ｗ系非晶質合金薄膜の製造
方法である。(Means for solving the problems) The present invention provides (Tal-xWx)1y(Si1-uBu
)y, where x=0.01 to 1. y=0.1
~0.4. u=0. A Ta-W system characterized in that an alloy of ol-0,99 is deposited on a substrate by heating and melting the metal in a vacuum and evaporating the metal atoms to form an amorphous thin film. This is a method for manufacturing an amorphous alloy thin film.
（作用）
Ｔａ−Ｗ−Ｂ系合金では、後に実施例で示すように、Ｔ
ａとＷ、またはＷが６０ａｔ％〜９０ａｔ％の組成範囲
で、非晶質合金ができることを本発明者は見いだした。(Function) In Ta-W-B alloys, as shown in Examples later, T
The present inventor has discovered that an amorphous alloy can be formed in a composition range of a and W, or W in a range of 60 at% to 90 at%.
この組成範囲をはずれると非晶質構造がほとんどみられ
なくなり、非晶質合金に特徴的な優れた特性がすべて消
失してしまう。また、Ｘの範囲を０．０１以−にと限定
したのは、この範囲に於て、Ｔａのみの場合、および、
Ｗを微量添加した場合よりも結晶化温度が高くなるから
である。さらに、Ｕの範囲を０．０１〜０．９９と限定
したのは、この範囲において、ＳｉまたはＢを微量添加
した場合や、何れか一方だけを添加した場合よりも結晶
化温度が高くなるからである。When the composition is outside this range, almost no amorphous structure is observed, and all the excellent properties characteristic of amorphous alloys are lost. In addition, the range of X is limited to 0.01 or more in the case of only Ta and
This is because the crystallization temperature becomes higher than when a small amount of W is added. Furthermore, the reason why the range of U is limited to 0.01 to 0.99 is that in this range, the crystallization temperature will be higher than when a trace amount of Si or B is added, or when only one of them is added. It is.
これらの非晶質合金の結晶化温度は、その融点の高さに
対応して、いずれも１０００°Ｃ以上という高い値であ
る。また、これらの非晶質合金の機械的特性は、非晶質
合金に一般にみられるように、高強度かつ高硬度である
。また、耐食性においても、ＴａおよびＷのすぐれた耐
食性に匹敵するほどの耐食性を有している。The crystallization temperatures of these amorphous alloys are all as high as 1000° C. or higher, corresponding to their high melting points. In addition, the mechanical properties of these amorphous alloys are high strength and high hardness, as is generally seen in amorphous alloys. Also, in terms of corrosion resistance, it has corrosion resistance comparable to that of Ta and W.
本発明による製造方法は、真空中において、金属を加熱
溶解して、金属原子を蒸発させることによって、基板−
ヒに付着させ、非晶質薄膜を形成する方法であるが、こ
の際、原料合金の溶解を水冷されたるつぼのなかで行う
ので、原料合金とるつぼ金属の反応はほとんどおこらな
い。るつぼ金属が十分に冷却されている場合には、たと
え高温度の溶解金属が接触したとしても、るつぼ金属の
温度が低すぎるために合金化反応が極めて起こりにくい
からである。The manufacturing method according to the present invention heats and melts metal in vacuum to evaporate metal atoms.
In this method, the raw material alloy is melted in a water-cooled crucible, so almost no reaction occurs between the raw material alloy and the crucible metal. This is because if the crucible metal is sufficiently cooled, even if high-temperature molten metal comes into contact with it, the temperature of the crucible metal is too low and alloying reactions are extremely unlikely to occur.
また、基板は、水、液体窒素等の冷媒によって、冷却し
ておくとより有効である。これは、薄膜作製中の基板温
度が高すぎると、形成された合金薄膜が、結晶質になっ
てしまい、非晶質相が得られにくくなるからであるある
。Further, it is more effective to cool the substrate with a coolant such as water or liquid nitrogen. This is because if the substrate temperature during thin film production is too high, the formed alloy thin film will become crystalline, making it difficult to obtain an amorphous phase.
さらに、溶解手段としては、電子ビーム溶解、レーザー
ビーム溶解などのよく知られた方法を用いることができ
る。Further, as the melting means, well-known methods such as electron beam melting and laser beam melting can be used.
また、溶解される原料物質としては、目的組成のＴａ−
Ｗ−８ｉ−Ｂ合金、あるいは、Ｔａ、 Ｗ、 Ｓｉおよ
びＢを別々に準備することができる。In addition, the raw material to be dissolved is Ta-
A W-8i-B alloy or Ta, W, Si and B can be prepared separately.
Ｔａ−Ｗ−８ｉ−Ｂ合金の場合には、この合金を溶解す
ることによって、また、Ｔａ、 Ｗ、 ＳｉおよびＢを
準備する場合には、それぞれを同時に別個に溶解するこ
とによって、薄膜を形成することができる。また、得ら
れる合金薄膜の組成は、原料となるＴａ−Ｗ−８ｉ−Ｂ
合金の組成を変化させることにより、また、Ｔａ、 Ｗ
、 ＳｉおよびＢの蒸気圧を調整することにより、容易
に変化させることが出来るため、目的とする組成の非晶
質合金薄膜を容易に得ることができる。In the case of the Ta-W-8i-B alloy, the thin film is formed by melting this alloy, and in the case of preparing Ta, W, Si and B, by melting each simultaneously and separately. can do. In addition, the composition of the obtained alloy thin film is Ta-W-8i-B, which is the raw material.
By changing the composition of the alloy, Ta, W
, Si and B can be easily changed by adjusting their vapor pressures, so an amorphous alloy thin film having a desired composition can be easily obtained.
以上のように、本発明の製造方法によって、Ｔａ−Ｗ系
非晶質合金は、組成制御された、高純度の合金薄膜とし
て、大面積に、かつ、均質に、基板上に形成することが
できる。As described above, by the manufacturing method of the present invention, a Ta-W-based amorphous alloy can be uniformly formed over a large area as a high-purity alloy thin film with controlled composition on a substrate. can.
（実施例）
以下、本発明の一実施例を図により詳細に説明する。第
１図に、本発明のＴａ−Ｗ系非晶質合金薄膜を作製する
装置の一例を示す。第１図に示す装置は高真空電子ビー
ム蒸着装置である。蒸発材料１゜２は、それぞれるつぼ
３，４に保持されている。本実施例においては、蒸発材
料１にはＴａ、蒸発材料２には、Ｗ−８ｉ−Ｂ合金を使
用した。各蒸発材料は、るつぼ中に５０ｇ準備すること
ができる。るつぼ３，４は銅製であり、冷却水導入管５
によって、水冷されており、蒸発材料が溶解した状態に
おいても、温度が上昇することはない。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 shows an example of an apparatus for producing the Ta--W amorphous alloy thin film of the present invention. The apparatus shown in FIG. 1 is a high vacuum electron beam evaporation apparatus. Evaporated materials 1 and 2 are held in crucibles 3 and 4, respectively. In this example, Ta was used as the evaporation material 1, and W-8i-B alloy was used as the evaporation material 2. 50 g of each evaporated material can be prepared in a crucible. The crucibles 3 and 4 are made of copper, and the cooling water introduction pipe 5
It is water-cooled, and the temperature does not rise even when the evaporation material is dissolved.
基板６は、基板ホルダー７に固定されている。基板には
、長さ５０ｍｍ、幅２５ｍｍで厚さ０．２ｍｍのガラス
を用いた。基板ホルダー７には、液体窒素導入管８より
導入された液体窒素９が蓄えられており、基板が十分冷
却される構造になっている。The substrate 6 is fixed to a substrate holder 7. The substrate used was glass with a length of 50 mm, a width of 25 mm, and a thickness of 0.2 mm. The substrate holder 7 stores liquid nitrogen 9 introduced from a liquid nitrogen introduction pipe 8, and has a structure in which the substrate is sufficiently cooled.
薄膜作製に際しては、最初に、真空チャンバー１０を真
空ポンプ１１によって、１．０− ”Ｔｏｒｒ台の真空
まで排気する。この状態で、電子ビーム源１２．１３よ
り、電子ビームを発生させ、蒸発材料１，２を同時に加
熱、溶解させる。溶解した材料からは、Ｔａ、Ｗ、 Ｓ
ｉおよびＢが原子状態で蒸発する。蒸着の最初１時間は
、シャッター１４を閉じた状態で予備蒸着を行う。つぎ
に、予備蒸着終了後、シャッターを開くことにより、基
板上に薄膜を作製した。蒸発材料１および２から飛び出
した蒸発原子は、基板付近でお互いに混合状態になり、
基板に付着する際には、均質な合金として付着する。薄
膜作製中の真空度は、１叶７Ｔｏｒｒであった。また、
薄膜作製中の基板温度を熱電対１５を通して、温度計１
６によって測定したところ、−１８０°Ｃであった。蒸
着は、１時間行った。得られた薄膜の厚さは、５ｐｍ程
度であった。When producing a thin film, first, the vacuum chamber 10 is evacuated to a vacuum level of 1.0-'' Torr using the vacuum pump 11. In this state, an electron beam is generated from the electron beam source 12.13, and the evaporated material is evacuated. 1 and 2 are simultaneously heated and melted.The melted materials include Ta, W, and S.
i and B evaporate in atomic state. During the first hour of vapor deposition, preliminary vapor deposition is performed with the shutter 14 closed. Next, after the preliminary vapor deposition was completed, a thin film was produced on the substrate by opening the shutter. The evaporated atoms flying out from evaporation materials 1 and 2 become mixed with each other near the substrate,
When it is attached to a substrate, it is attached as a homogeneous alloy. The degree of vacuum during the production of the thin film was 1/7 Torr. Also,
The temperature of the substrate during thin film production is measured by thermometer 1 through thermocouple 15.
6, the temperature was -180°C. Vapor deposition was carried out for 1 hour. The thickness of the obtained thin film was about 5 pm.
得られたＴａ−Ｗ−８ｉ−Ｂ合金薄膜の構造をＸ線回折
法によって評価した。その結果、薄膜の組成でＴａとＷ
、および、Ｗが６０ａｔ％〜９０ａｔ％の組成範囲では
いずれの薄帯も結晶による鋭い回折ピークはみられず、
ブロードなハローパターンが得られたことから、非晶質
合金薄膜が得られたことが確認された。第１表に、示差
熱分析で測定したこれらの試料の結晶化温度を示す。い
ずれも１０００°Ｃ以上の高い結晶化温度を示しており
、Ｔａ −Ｓｉ −Ｂ系非晶質合金の場合よりもさらに
１００°Ｃ〜２００°Ｃ高い結晶化温度を有しているこ
とがわかる。、また、これらの試料は、８００°Ｃで１
０００時間焼鈍した後も非晶質構造を有しており、非常
に耐熱性の高い非晶質合金であることが判明した。また
これらの機械的特性は、ビッカース硬度が８００〜１５
００の範囲であるという［”れた性質を示した。さらに
、これらの試料は濃塩酸、濃硝酸、濃硫酸、濃王水の中
に一日放置しても何等腐食された様子は見られず、重量
変化も認められなかった。The structure of the obtained Ta-W-8i-B alloy thin film was evaluated by X-ray diffraction method. As a result, we found that the composition of the thin film is Ta and W.
, and in the composition range of 60 at% to 90 at% W, no sharp diffraction peaks due to crystals were observed in any of the ribbons,
Since a broad halo pattern was obtained, it was confirmed that an amorphous alloy thin film was obtained. Table 1 shows the crystallization temperatures of these samples determined by differential thermal analysis. All of them show a high crystallization temperature of 1000°C or more, which indicates that they have a crystallization temperature that is 100°C to 200°C higher than that of the Ta-Si-B amorphous alloy. . , these samples were also heated to 1 at 800°C.
It was found that the alloy had an amorphous structure even after being annealed for 1,000 hours, and was an amorphous alloy with extremely high heat resistance. In addition, these mechanical properties have a Vickers hardness of 800 to 15
Furthermore, these samples showed no signs of corrosion even after being left in concentrated hydrochloric acid, concentrated nitric acid, concentrated sulfuric acid, or concentrated aqua regia for a day. No change in weight was observed.
第１表
なお、本実施例では、高真空電子ビーム蒸着装置による
Ｔａ−Ｗ系非晶質合金薄膜の製造方法を紹介したが、非
晶質薄膜を作製する際に、他の蒸着方法、即ち、レーザ
ービーム蒸着法、クラスターイオンビーム蒸着法等を利
用してもさしつがえない。Table 1 Note that in this example, a method for producing a Ta-W amorphous alloy thin film using a high-vacuum electron beam evaporation apparatus was introduced, but when producing an amorphous thin film, other vapor deposition methods, such as , laser beam evaporation, cluster ion beam evaporation, etc. may also be used.
（発明の効果）
以上詳細に説明したように、本発明によるＴａ−Ｗ系非
晶質合金薄膜の製造方法は高い結晶化温度を有し、かつ
、機械的特性、耐食性等にすぐれた非晶質合金薄膜が容
易に得られ、その効果は大きい。(Effects of the Invention) As explained in detail above, the method for producing a Ta-W amorphous alloy thin film according to the present invention has a high crystallization temperature and an amorphous film with excellent mechanical properties, corrosion resistance, etc. A high quality alloy thin film can be easily obtained, and the effect is great.
第１図は、本発明のＴａ−Ｗ系非晶質合金薄膜を作製す
る装置の一例を示す図である。図において、１および２
は蒸発材料、３および４はるつぼ、５は冷却水導入管、
６は基板、７は基板ホルダー、８は液体窒素導入管、９
は液体窒素、１０はチャンバー、１１は真空ポンプ、１
２および１３は電子ビーム源、１４はシャッター、１５
は熱電対、１６は温度計である。FIG. 1 is a diagram showing an example of an apparatus for producing a Ta-W based amorphous alloy thin film of the present invention. In the figure, 1 and 2
is an evaporation material, 3 and 4 are crucibles, 5 is a cooling water introduction pipe,
6 is a substrate, 7 is a substrate holder, 8 is a liquid nitrogen introduction tube, 9
is liquid nitrogen, 10 is a chamber, 11 is a vacuum pump, 1
2 and 13 are electron beam sources, 14 is a shutter, 15
is a thermocouple, and 16 is a thermometer.
Claims (1)
−＿ｕＢ＿ｕ）＿ｙなる式で表され、ｘ＝０．０１〜１
、ｙ＝０．１〜０．４、ｕ＝０．０１〜０．９９である
組成の合金を、真空中において、金属を加熱溶解し、金
属原子を蒸発させることによって、基板上に薄膜を形成
する真空蒸着装置を用いて、非晶質化させることを特徴
とするＴａ−Ｗ系非晶質合金薄膜の製造方法。(Ta_1_-_xW_x)_1_-_y(Si_1_
−_uB_u)_y, x=0.01 to 1
, y = 0.1 to 0.4, and u = 0.01 to 0.99, a thin film is formed on the substrate by heating and melting the metal in vacuum and evaporating the metal atoms. 1. A method for producing a Ta--W amorphous alloy thin film, which comprises making it amorphous using a vacuum evaporation apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27018586A JPS63125669A (en) | 1986-11-12 | 1986-11-12 | Production of thin amorphous ta-w alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27018586A JPS63125669A (en) | 1986-11-12 | 1986-11-12 | Production of thin amorphous ta-w alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63125669A true JPS63125669A (en) | 1988-05-28 |
| JPH0583630B2 JPH0583630B2 (en) | 1993-11-26 |
Family
ID=17482707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27018586A Granted JPS63125669A (en) | 1986-11-12 | 1986-11-12 | Production of thin amorphous ta-w alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63125669A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5887918A (en) * | 1996-05-13 | 1999-03-30 | Toyota Jidosha Kabushiki Kaisha | Automobile door handle |
-
1986
- 1986-11-12 JP JP27018586A patent/JPS63125669A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5887918A (en) * | 1996-05-13 | 1999-03-30 | Toyota Jidosha Kabushiki Kaisha | Automobile door handle |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0583630B2 (en) | 1993-11-26 |
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