JPS63125666A - Ta系非晶質合金薄膜の製造方法 - Google Patents
Ta系非晶質合金薄膜の製造方法Info
- Publication number
- JPS63125666A JPS63125666A JP27018286A JP27018286A JPS63125666A JP S63125666 A JPS63125666 A JP S63125666A JP 27018286 A JP27018286 A JP 27018286A JP 27018286 A JP27018286 A JP 27018286A JP S63125666 A JPS63125666 A JP S63125666A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- alloy
- amorphous
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910001362 Ta alloys Inorganic materials 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 22
- 239000000956 alloy Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 19
- 238000001704 evaporation Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 230000008018 melting Effects 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 238000007738 vacuum evaporation Methods 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 abstract description 11
- 230000008025 crystallization Effects 0.000 abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 230000008020 evaporation Effects 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 6
- 238000010894 electron beam technology Methods 0.000 abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 239000000498 cooling water Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 2
- 239000000289 melt material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 14
- 229910000676 Si alloy Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27018286A JPS63125666A (ja) | 1986-11-12 | 1986-11-12 | Ta系非晶質合金薄膜の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27018286A JPS63125666A (ja) | 1986-11-12 | 1986-11-12 | Ta系非晶質合金薄膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63125666A true JPS63125666A (ja) | 1988-05-28 |
JPH0582464B2 JPH0582464B2 (enrdf_load_stackoverflow) | 1993-11-19 |
Family
ID=17482667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27018286A Granted JPS63125666A (ja) | 1986-11-12 | 1986-11-12 | Ta系非晶質合金薄膜の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63125666A (enrdf_load_stackoverflow) |
-
1986
- 1986-11-12 JP JP27018286A patent/JPS63125666A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0582464B2 (enrdf_load_stackoverflow) | 1993-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |