JPS63124540A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the occurrence of short-circuit faults due to metal wire when an interval between the first electrode pad and the neighboring second electrode pad is made small, by providing a step part between both electrode pads. CONSTITUTION:A transistor is formed on a semiconductor chip 1. A first electrode pad 2 on the grounding side is provided on the surface of the semiconductor chip 1. A second electrode pad 3 is provided on the input side and an electrode pad 4 on the output side. The surface of the semiconductor chip 1, where the electrode pad 2 is formed, is formed lower than a part where the electrode pad 3 is formed by, e.g., etching. Namely, when a metal wire 6 is connected to the electrode pad 3, the electrode pad 2 is made lower than the electrode pad 3 by, e.g., about 10 mum. Therefore the metal wire 6 is not contacted with the electrode pad 2 even if the planar distance between both electrode pads becomes about 10 mum.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device having electrode pads on its surface.

[Conventional technology]

Generally, a transistor element has electrodes formed on the surface of a semiconductor chip, and has electrode pads for external extraction. In particular, in FET structures, the electrode pad on the input side and the electrode pad on the ground side are often provided adjacent to each other, and as the frequency increases, miniaturization and miniaturization progress. When connecting metal wires for wiring as the spacing becomes smaller, fine control is required for the positional accuracy of the connection and the shape of the tension of the metal wires in order to avoid contact with adjacent electrode pads.

FIGS. 3(a) and 3(b) are a plan view and a sectional view taken along the line BB' of an example of a conventional semiconductor device.

As shown in FIGS. 3(a) and 3(b), the first electrode butt 2 and the second electrode butt 3 are provided on the same plane on the semiconductor chip 1. When connecting the metal wire 6 with a diameter of 30 μm to the electrode pad 3,
If the distance between the metal wire 6 and the electrode pad 2 is not kept at least 30 μm, the metal wire 6 may come into contact with the electrode pad 2.

rProblems to be Solved by the Invention] In the conventional semiconductor device described above, in the case of a transistor in which the distance between adjacent electrode pads is small, it is necessary to control the positional accuracy of the connection of the metal wire and the tension shape extremely finely. Therefore, there is a problem that productivity is hindered.

[Means for solving problems]

The semiconductor device of the present invention includes a first electrode pad provided on the surface of a semiconductor chip, and a second electrode pad provided adjacent to the first electrode pad with a step difference from the first electrode pad. are doing.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIGS. 1(a) and 1(b) are a plan view and a sectional view taken along the line AA' of the first embodiment of the present invention.

As shown in FIGS. 1(a) and (b), the first embodiment includes a semiconductor chip 1 on which a transistor is formed, and a first electrode pad 2 on the ground side provided on the surface of the semiconductor chip 1. , a second electrode pad 3 on the input side and an electrode pad 4 on the output side, and the surface of the semiconductor chip 1 which is the component forming the electrode pad 2 is etched, for example, from the part where the electrode pad 3 is formed. It is formed low.

Now, when connecting the metal wire 6 to the electrode pad 3 under the same conditions as in the conventional example shown in FIG. Even if the distance is about 10 μm, the metal wire 6
does not come into contact with the electrode pad 2.

FIG. 2 is a sectional view of a second embodiment of the invention.

As shown in FIG. 2, the second embodiment is a semiconductor chip 1. And this semiconductor chip 1
．． The semiconductor chip 1. has electrode pads 2 to 4 provided on the surface of the semiconductor chip 1. The surface of
For example, by forming the polycrystalline silicon layer 5, it is formed higher than the portion where the electrode pad 2 is to be formed.

According to the second embodiment, for example, one polycrystalline silicon layer is
By forming the electrode pads to a thickness of 0 μm, the planar distance between the electrode pads 2 and 3 can be approximately 10 μm.

〔Effect of the invention〕

As explained above, in the semiconductor device of the present invention, by providing a step between the first electrode pad and the second electrode pad adjacent thereto, short-circuit failure due to the metal wire can be avoided even if the distance between the two electrode pads is small. Since this can be prevented from occurring, it has the effect of improving productivity.

[Brief explanation of the drawing]

Figures 1 (a> and (b) are a plan view and a cross-sectional view taken along line A-A' of the first embodiment of the present invention, Figure 2 is a cross-sectional view of the second embodiment of the present invention, and Figure 3 is a cross-sectional view of the second embodiment of the present invention. (a) and (b) are a plan view and a sectional view taken along the line B-B' of an example of a conventional semiconductor device. 1.1. Semiconductor chip, 2.3.4 Electrode pad, 5 ... Polycrystalline silicon layer, 6... Metal wire.

Claims (1)

[Claims] a first electrode pad provided on the surface of the semiconductor chip;
A semiconductor device comprising a second electrode pad provided adjacent to the first electrode pad with a step difference from the first electrode pad.