JPS63120508A - Manufacture of piezoelectric resonator - Google Patents
Manufacture of piezoelectric resonatorInfo
- Publication number
- JPS63120508A JPS63120508A JP26688986A JP26688986A JPS63120508A JP S63120508 A JPS63120508 A JP S63120508A JP 26688986 A JP26688986 A JP 26688986A JP 26688986 A JP26688986 A JP 26688986A JP S63120508 A JPS63120508 A JP S63120508A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- piezoelectric
- resonator
- piezoelectric resonator
- piezoelectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000009966 trimming Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はVHF、UHFなどの高周波帯域で用いられる
圧電共振子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a piezoelectric resonator used in high frequency bands such as VHF and UHF.
従来の技術
近年、各種電子部品関係の技術の進歩による集積化、小
型化は目ざましいものがある。共振器やフィルタ等の受
動部品も例外ではなく、例えばテレビやVTRの映像中
間周波用に広く用いられるようになった弾性表面波素子
(SAW)がある。2. Description of the Related Art In recent years, advances in technology related to various electronic components have resulted in remarkable integration and miniaturization. Passive components such as resonators and filters are no exception; for example, surface acoustic wave elements (SAW) have become widely used for video intermediate frequencies of televisions and VTRs.
さらには第3図のようなダイヤフラム形複合共振子も見
出され、公知のものとなっている。このダイヤフラム形
複合共振子については以下のような特徴を持っている。Furthermore, a diaphragm type composite resonator as shown in FIG. 3 has also been discovered and is well known. This diaphragm type composite resonator has the following characteristics.
+11 共振子の小型化が可能であること。+11 It is possible to downsize the resonator.
従来、一般的に用いられてきた水晶振動子が大きな基板
を研摩などの加工により薄く小さくしていったのに対し
て、本共振子は圧電性の薄膜によりμmオーダの厚みで
形成される。さらにシリコン基板などを用いることによ
り一般的な集積回路と同じ製造工程で作られるため大幅
な小型化が図れるものである。In contrast to conventionally commonly used quartz crystal resonators, in which a large substrate is made thinner and smaller through processing such as polishing, the present resonator is formed of a piezoelectric thin film with a thickness on the order of micrometers. Furthermore, by using a silicon substrate or the like, it can be manufactured in the same manufacturing process as general integrated circuits, allowing for significant miniaturization.
(2)電気機械結合係数が大きく共振器の広帯域化が可
能である。(2) The electromechanical coupling coefficient is large, allowing the resonator to have a wide band.
(3)圧電性薄膜と温度係数が反対の非圧電性薄膜を適
当な膜厚比で組み合せることにより、温度係数を零にす
ることも可能である。例えば、圧電性薄膜としてZnO
(酸化亜鉛)を用いた場合、SiO□ (酸化珪素)と
の膜厚比が約2:1の場合に零温度係数となる。(3) It is also possible to reduce the temperature coefficient to zero by combining a piezoelectric thin film and a non-piezoelectric thin film having opposite temperature coefficients at an appropriate film thickness ratio. For example, ZnO as a piezoelectric thin film
When (zinc oxide) is used, the temperature coefficient becomes zero when the film thickness ratio with SiO□ (silicon oxide) is approximately 2:1.
発明が解決しようとする問題点
上述のような有用性を持った素子を高周波回路に応用し
製造する段階では次のような点が問題となってくる。即
ち圧電膜や電極部分の導体層などの膜厚にバラツキが生
じてくる。このバラツキは厚み振動を利用した共振子で
ある性質上、共振周波数のバラツキにつながり、精度の
良い共振回路を組み立てる上での障害となってくる。例
えば、精密さを特に要求される情報機器などに利用され
る場合には、中心周波数が10−5といったオーダのバ
ラツキに抑えることが求められている。しかし、製作手
段を工夫してこの要請に答えることは非常な努力を要す
るものである。本発明はこの点に関して新しい手法を提
供するものである。Problems to be Solved by the Invention At the stage of applying and manufacturing a device having the above-mentioned usefulness to a high frequency circuit, the following problems arise. That is, variations occur in the thickness of the piezoelectric film and the conductor layer of the electrode portion. Due to the nature of the resonator utilizing thickness vibration, this variation leads to variation in the resonant frequency, which becomes an obstacle in assembling a highly accurate resonant circuit. For example, when used in information equipment that particularly requires precision, it is required to suppress variations in the center frequency to an order of 10-5. However, it requires a great deal of effort to meet this demand by devising production methods. The present invention provides a new approach in this regard.
問題点を解決するための手段
上記問題点を解決するために本発明では、圧電膜をはさ
んで形成された電極をレーザ光や集束イオンビームなど
を用いてトリミングを行ったり、ボンディングにより電
極部を結合したりする手法により電極の大きさを変え、
微調整を可能にしたものである。Means for Solving the Problems In order to solve the above problems, in the present invention, the electrodes formed by sandwiching the piezoelectric film are trimmed using a laser beam, a focused ion beam, etc., and the electrode parts are trimmed by bonding. The size of the electrode can be changed by combining the
This allows for fine adjustments.
作用
本発明は、従来の製造上の問題点であった共振周波数の
バラツキを、トリミングやポンディングにより電極部の
大きさを変えることにより抑え、容易に特性の微調整を
可能にするものである。Function The present invention suppresses the variation in resonance frequency, which was a problem in conventional manufacturing, by changing the size of the electrode part by trimming or pounding, and makes it possible to easily fine-tune the characteristics. .
実施例
以下本発明の圧電共振子の製造方法の一実施例について
、図面を用いて説明する。EXAMPLE Hereinafter, an example of the method for manufacturing a piezoelectric resonator of the present invention will be described with reference to the drawings.
第1図は本発明を説明するためのエネルギ閉じ込め振動
を説明するためのものであり、第2図は本発明の一実施
例を示すものである。共振子において厚み振動モードを
利用する場合、第1図に示すように圧電基板に部分的に
電極を作るとこれがキャビティとなり、振動の定在波を
生じてエネルギが閉じ込められる。これはいわゆるエネ
ルギ閉じ込め現象といわれている。この現象は端面から
の影響を受けないし、また同一の基板に一定以上の間隔
を置いて複数の電極を構成しても相互に干渉しないなど
の有利な点がある。さらに対向する電極の一方を分割し
てやると対称モード、斜対称モードの2つの振動が同時
に励起されてフィルタ特性が得られる。本発明はこれら
のことをもとに応用したものである。第2図は本説明の
一実施例をわかりやすく簡単化して説明したものである
。FIG. 1 is for explaining energy-trapped vibration for explaining the present invention, and FIG. 2 is for showing an embodiment of the present invention. When using the thickness vibration mode in a resonator, electrodes are formed partially on the piezoelectric substrate as shown in FIG. 1, and these form cavities, generating standing waves of vibration and trapping energy. This is called the so-called energy confinement phenomenon. This phenomenon has the advantage that it is not affected by the end face, and that even if a plurality of electrodes are arranged on the same substrate with a certain interval or more, they will not interfere with each other. Furthermore, if one of the opposing electrodes is divided, two vibrations, a symmetrical mode and an obliquely symmetrical mode, are simultaneously excited to obtain filter characteristics. The present invention is an application based on these facts. FIG. 2 is a simplified explanation of one embodiment of the present description for easy understanding.
第2図(alは圧電共振子を上部から見たものである。FIG. 2 (al is a view of the piezoelectric resonator from above.
第2図(blは第2図(alのダイヤフラム上の電極部
を拡大したもので、電極の左下部分をレーザ光などによ
りトリミングした例を示すものである。また、第2図t
elは同様の拡大図であるが、これはワイヤボンディン
グにより電極部を結合して広げたことを示すものである
。これらの図かられかるようにレーザトリミング、ワイ
ヤポンディングなどの手法を用いることにより、簡単に
共振周波数の調整をできるようにしたものである。Figure 2 (bl is an enlarged view of the electrode part on the diaphragm in Figure 2 (al), and shows an example in which the lower left part of the electrode has been trimmed with a laser beam, etc.
el is a similar enlarged view, but this shows that the electrode parts are bonded and expanded by wire bonding. As can be seen from these figures, the resonance frequency can be easily adjusted by using techniques such as laser trimming and wire bonding.
発明の効果
以上のように本発明の製造方法によれば、従来の方法に
よる欠点を除き特性の良好な圧電共振子の製造が可能で
ある。Effects of the Invention As described above, according to the manufacturing method of the present invention, it is possible to manufacture a piezoelectric resonator with good characteristics while eliminating the drawbacks of conventional methods.
第1図は、圧電膜の厚み振動の説明図、第2図ta+〜
(C1は、本発明による圧電共振子の製造方法の説明図
、第3図は、従来方法による圧電共振子の構成図である
。
11・・・・・・部分電極、12・・・・・・圧電体、
21・・・・・・電極、22・・・・・・圧電膜、23
・・・・・・非圧電膜、24・・・・・・トリミング、
25・・・・・・調整用電極、26・・・・・・ワイヤ
。Figure 1 is an explanatory diagram of thickness vibration of the piezoelectric film, Figure 2 is ta+~
(C1 is an explanatory diagram of the method for manufacturing a piezoelectric resonator according to the present invention, and FIG. 3 is a configuration diagram of a piezoelectric resonator according to a conventional method. 11... Partial electrode, 12...・Piezoelectric body,
21... Electrode, 22... Piezoelectric film, 23
...Non-piezoelectric film, 24...Trimming,
25...Adjustment electrode, 26...Wire.
Claims (1)
ように配置し、前記電極部をトリミング、またはボンデ
ィング等により各々の電極の大きさを変化させることに
より共振特性の調整を可能にしたことを特徴とする圧電
共振子の製造方法。At least one pair or more of electrode parts are arranged on both sides of the piezoelectric film so as to face each other, and the resonance characteristics can be adjusted by changing the size of each electrode by trimming or bonding the electrode parts. A method for manufacturing a piezoelectric resonator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26688986A JPS63120508A (en) | 1986-11-10 | 1986-11-10 | Manufacture of piezoelectric resonator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26688986A JPS63120508A (en) | 1986-11-10 | 1986-11-10 | Manufacture of piezoelectric resonator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63120508A true JPS63120508A (en) | 1988-05-24 |
Family
ID=17437059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26688986A Pending JPS63120508A (en) | 1986-11-10 | 1986-11-10 | Manufacture of piezoelectric resonator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63120508A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001211673A (en) * | 2000-01-21 | 2001-08-03 | Nikon Corp | Manufacturing method of vibration actuator |
US6859116B2 (en) * | 2001-07-30 | 2005-02-22 | Kyocera Corporation | Piezoelectric resonator |
EP1691427A1 (en) * | 2005-02-10 | 2006-08-16 | Seiko Epson Corporation | Piezoelectric vibrator, method for adjusting piezoelectric vibrator, piezoelectric actuator, timepiece, and electronic device |
JP2006296042A (en) * | 2005-04-07 | 2006-10-26 | Seiko Instruments Inc | Piezoelectric device, its fabrication process, and electronic apparatus |
-
1986
- 1986-11-10 JP JP26688986A patent/JPS63120508A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001211673A (en) * | 2000-01-21 | 2001-08-03 | Nikon Corp | Manufacturing method of vibration actuator |
US6859116B2 (en) * | 2001-07-30 | 2005-02-22 | Kyocera Corporation | Piezoelectric resonator |
EP1691427A1 (en) * | 2005-02-10 | 2006-08-16 | Seiko Epson Corporation | Piezoelectric vibrator, method for adjusting piezoelectric vibrator, piezoelectric actuator, timepiece, and electronic device |
JP2006254683A (en) * | 2005-02-10 | 2006-09-21 | Seiko Epson Corp | Piezoelectric vibrating body, adjusting method for piezoelectric vibrating body, piezoelectric actuator, clock, and electronic equipment |
EP2063470A1 (en) * | 2005-02-10 | 2009-05-27 | Seiko Epson Corporation | Piezoelectric vibrator, method for adjusting piezoelectric vibrator, piezoelectric actuator, timepiece, and electronic device |
US7671518B2 (en) | 2005-02-10 | 2010-03-02 | Seiko Epson Corporation | Piezoelectric vibrator, method for adjusting piezoelectric vibrator, piezoelectric actuator, timepiece, and electronic device |
JP4529889B2 (en) * | 2005-02-10 | 2010-08-25 | セイコーエプソン株式会社 | Piezoelectric vibrator, adjustment method of piezoelectric vibrator, piezoelectric actuator, timepiece, electronic device |
JP2006296042A (en) * | 2005-04-07 | 2006-10-26 | Seiko Instruments Inc | Piezoelectric device, its fabrication process, and electronic apparatus |
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