JPS63119555A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63119555A JPS63119555A JP26622486A JP26622486A JPS63119555A JP S63119555 A JPS63119555 A JP S63119555A JP 26622486 A JP26622486 A JP 26622486A JP 26622486 A JP26622486 A JP 26622486A JP S63119555 A JPS63119555 A JP S63119555A
- Authority
- JP
- Japan
- Prior art keywords
- metal plate
- insulating materials
- fixed
- radiating metal
- solders
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000011810 insulating material Substances 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 238000007751 thermal spraying Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 13
- 238000000576 coating method Methods 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置、特に電力用半導体装置の電気回路
と放熱金属板との電気的絶縁に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to electrical insulation between an electric circuit and a heat-radiating metal plate of a semiconductor device, particularly a power semiconductor device.
第3図は従来のこの種の半導体装置を示す断面図である
。第3図において、1は放熱金属板、2a、2bは絶縁
板、3a、3b、3cは電気回路を構成するための電極
板、4a、4bは半導体素子、5は電極板3a、3b、
3cおよび半導体素子4a、4bを保護するための封止
樹脂、6a〜6fは放熱金属板1.絶縁板2a、2b、
電極板3a、3b、3c+半導体素子4a、4bを固着
させるためのハンダである。FIG. 3 is a sectional view showing a conventional semiconductor device of this type. In FIG. 3, 1 is a heat dissipation metal plate, 2a, 2b are insulating plates, 3a, 3b, 3c are electrode plates for configuring an electric circuit, 4a, 4b are semiconductor elements, 5 is an electrode plate 3a, 3b,
3c and a sealing resin for protecting semiconductor elements 4a and 4b, and 6a to 6f are heat dissipating metal plates 1. Insulating plates 2a, 2b,
This is solder for fixing the electrode plates 3a, 3b, 3c+semiconductor elements 4a, 4b.
次に、この半導体装置の組立て順序について第4図を用
いて説明する。まず、放熱金属板1の上に位置決め治具
7を置き、その中にハンダ6a。Next, the assembly order of this semiconductor device will be explained using FIG. 4. First, the positioning jig 7 is placed on the heat dissipation metal plate 1, and the solder 6a is placed therein.
6bおよび絶縁板2a、2bを置く。次に、位置決め治
具7の上に位置決め治具8を置き、その中にハンダ6c
、6dおよび電極板3a、3cを置き、さらにその上に
位置決め治具9を置き、その中にハンダ6e、6fおよ
び半導体素子4a、4bを置く。次に、全体を加熱して
ハンダ6a〜6fを溶融させ、その後冷却させて固着さ
せる。6b and insulating plates 2a and 2b are placed. Next, place the positioning jig 8 on the positioning jig 7, and place the solder 6c in it.
, 6d and electrode plates 3a, 3c are placed, and further a positioning jig 9 is placed thereon, and solders 6e, 6f and semiconductor elements 4a, 4b are placed therein. Next, the whole is heated to melt the solders 6a to 6f, and then cooled and fixed.
従来の半導体装置は以上のように構成されているので、
絶縁板2a、2bを放熱金属板1に対して位置決め治具
7で位置決めしなければならず、また絶縁板2a、2b
は単体での機械的強度を保つためにあまり薄(できない
という問題があった。Conventional semiconductor devices are configured as described above, so
The insulating plates 2a, 2b must be positioned with respect to the heat dissipating metal plate 1 using the positioning jig 7, and the insulating plates 2a, 2b
The problem was that it could not be made very thin in order to maintain its mechanical strength.
本発明はこのような点に鑑みてなされたものであり、そ
の目的とするところは、位置決め治具数およびハンダ個
所の数をより少なくし、絶縁物質を必要最小限に薄くで
きる半導体装置を得ることにある。The present invention has been made in view of these points, and its purpose is to obtain a semiconductor device in which the number of positioning jigs and soldering parts can be reduced, and the thickness of the insulating material can be made as thin as necessary. There is a particular thing.
このような目的を達成するために本発明は、単−又は複
数個の半導体素子を用いて構成した電気回路と、この電
気回路に電気的に絶縁されて固着された放熱金属板と、
電気回路を保護するための封止樹脂とを有する半導体装
置において、電気回路と放熱金属板との電気的絶縁に放
熱金属板に溶射て固着させた絶縁物質を用いるようにし
たものである。In order to achieve such an object, the present invention provides an electric circuit configured using one or more semiconductor elements, a heat dissipating metal plate electrically insulated and fixed to the electric circuit,
In a semiconductor device having a sealing resin for protecting an electric circuit, an insulating material sprayed and fixed to the heat-radiating metal plate is used for electrical insulation between the electric circuit and the heat-radiating metal plate.
本発明においては、位置決め治具数およびハンダ個所数
を減少させ、1!l縁物質を必要最小限に薄くすること
ができる。In the present invention, the number of positioning jigs and soldering locations is reduced, and 1! The edge material can be made as thin as necessary.
本発明に係わる半導体装置の一実施例を第1図に示す。 An embodiment of a semiconductor device according to the present invention is shown in FIG.
第1図において、10は絶縁物質である。In FIG. 1, 10 is an insulating material.
第1図において第3図と同一部分又は相当部分には同一
符号が付しである。In FIG. 1, the same or equivalent parts as in FIG. 3 are given the same reference numerals.
次に、組立て順序について第2図を用いて説明する。ま
ず、絶縁物質10を溶射により固着させた放熱金属板1
の上に位置決め治具8を置き、その中にハンダ5c、5
dおよび電極板3a、3cを置き、さらにその上に位置
決め治具9を置き、その中にハンダ6e、6fおよび半
導体素子4a、4bを置く。次に、全体を加熱してハン
ダ6C〜6fを溶融させ、その後冷却させて固着させる
。Next, the assembly order will be explained using FIG. 2. First, a heat dissipating metal plate 1 on which an insulating material 10 is fixed by thermal spraying.
Place the positioning jig 8 on top of the solder 5c, 5
d and electrode plates 3a, 3c are placed, and further a positioning jig 9 is placed thereon, and solders 6e, 6f and semiconductor elements 4a, 4b are placed therein. Next, the whole is heated to melt the solders 6C to 6f, and then cooled and fixed.
なお、上記実施例では、放熱金属板1の2箇所に絶縁物
質10を固着させたものを示したが、1箇所又は3個所
以上に固着させてもよい。また、上記実施例では、2個
の半導体素子4a、4bを用いた場合を示したが、それ
以外の個数でもよい。In the above embodiment, the insulating material 10 is fixed to two places on the heat dissipating metal plate 1, but the insulating material 10 may be fixed to one place or three or more places. Further, in the above embodiment, a case is shown in which two semiconductor elements 4a and 4b are used, but any other number may be used.
また、上記実施例に示す電気回路は任意の構成が可能で
ある。Moreover, the electric circuit shown in the above embodiment can have any configuration.
以上説明したように本発明は、絶縁物質を溶射により固
着した放熱金属板を用いたことにより、薄い絶縁物質で
も機械的強度上十分なものとなるので、絶縁物質を必要
最小限の厚さに薄くできるという効果があり、またこの
ことにより従来の絶縁板と放熱金属板との間のハンダや
位置決め治具が不要になるという効果がある。As explained above, the present invention uses a heat dissipating metal plate to which an insulating material is fixed by thermal spraying, so that even a thin insulating material can have sufficient mechanical strength. This has the effect of being able to be made thinner, and this also has the effect of eliminating the need for conventional soldering and positioning jigs between the insulating plate and the heat dissipating metal plate.
第1図は本発明に係わる半導体装置の一実施例を示す構
成図、第2図は第1図の装置の組立て順序を説明するた
めの組立状態図、第3図は従来の半導体装置を示す構成
図、第4図は第3図の装置の組立て順序を説明するため
の組立状態図である。
■・・・放熱金属板、3a、3b、3c・・・電極板、
4a、4b・・・半導体素子、5・・・封止樹脂、6C
〜6r・・・ハンダ、10・・・絶縁物質。FIG. 1 is a configuration diagram showing an embodiment of a semiconductor device according to the present invention, FIG. 2 is an assembly state diagram for explaining the assembly order of the device in FIG. 1, and FIG. 3 is a diagram showing a conventional semiconductor device. The configuration diagram and FIG. 4 are assembly state diagrams for explaining the assembly order of the device of FIG. 3. ■... Heat radiation metal plate, 3a, 3b, 3c... Electrode plate,
4a, 4b... Semiconductor element, 5... Sealing resin, 6C
~6r...Solder, 10...Insulating material.
Claims (1)
と、この電気回路に電気的に絶縁されて固着された放熱
金属板と、前記電気回路を保護するための封止樹脂とを
有する半導体装置において、前記電気回路と放熱金属板
との電気的絶縁に前記放熱金属板に溶射で固着させた絶
縁物質を用いたことを特徴とする半導体装置。A semiconductor comprising an electric circuit configured using a single or multiple semiconductor elements, a heat dissipating metal plate electrically insulated and fixed to the electric circuit, and a sealing resin for protecting the electric circuit. 1. A semiconductor device, wherein an insulating material fixed to the heat-radiating metal plate by thermal spraying is used for electrically insulating the electric circuit and the heat-radiating metal plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26622486A JPS63119555A (en) | 1986-11-08 | 1986-11-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26622486A JPS63119555A (en) | 1986-11-08 | 1986-11-08 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63119555A true JPS63119555A (en) | 1988-05-24 |
Family
ID=17427988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26622486A Pending JPS63119555A (en) | 1986-11-08 | 1986-11-08 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63119555A (en) |
-
1986
- 1986-11-08 JP JP26622486A patent/JPS63119555A/en active Pending
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