JPS63119135A - Ion beam gun - Google Patents
Ion beam gunInfo
- Publication number
- JPS63119135A JPS63119135A JP61264241A JP26424186A JPS63119135A JP S63119135 A JPS63119135 A JP S63119135A JP 61264241 A JP61264241 A JP 61264241A JP 26424186 A JP26424186 A JP 26424186A JP S63119135 A JPS63119135 A JP S63119135A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ion beam
- vacuum chamber
- chamber side
- beam gun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 21
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012466 permeate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- NPEWZDADCAZMNF-UHFFFAOYSA-N gold iron Chemical compound [Fe].[Au] NPEWZDADCAZMNF-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、水素イオン、Ｈａイオン、Ａｒイオン等のガ
ス１イオン放出用イオン・ビーム銃の先端構造に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a tip structure of an ion beam gun for emitting gas 1 ions such as hydrogen ions, Ha ions, Ar ions, etc.
従来、ガス・イオン・ビーム銃は、極細線Ｗ線の先端を
液化ガスで濡らすか、あるいは、ビン・ホールからのガ
ス放出を行なうと云う方法が用いられてい九〇
〔発明が解決しようとする問題点〕
しかし、上記従来技術によると、Ｗ線方式の場合は液化
ガスを用いなければならず、又、ピンホール方式の場合
と同様に真空度を保つのが困難という問題点があった。Conventionally, in gas ion beam guns, a method has been used in which the tip of an ultra-fine W wire is wetted with liquefied gas, or the gas is released from a bottle hole. Problems] However, according to the above-mentioned conventional technology, liquefied gas must be used in the case of the W-line method, and there are also problems in that it is difficult to maintain the degree of vacuum as in the case of the pinhole method.
本発明は、かかる従来技術の問題点をなくし、液化ガス
を用いず、ガス状態で且つ真空度を高く保つことができ
るイオン・ビーム銃の先端病造を提供する＄を目的とす
る。It is an object of the present invention to eliminate the problems of the prior art and provide a structure for the tip of an ion beam gun that can maintain a high degree of vacuum in a gaseous state without using liquefied gas.
上記問題点を解決するために、本発明は、イオン・ビー
ム銃のガス−イオン放出部には、（１）ハラジウム、チ
タン、タングステン等の極細線が埋め込′まれて形成す
る事
及び
（２）結晶粒界等の界面で形成する事
等の手段をとる。In order to solve the above problems, the present invention provides that the gas-ion emitting part of the ion beam gun is formed by (1) embedding ultrafine wires of haladium, titanium, tungsten, etc.; ) Take measures such as forming at interfaces such as grain boundaries.
パラジウム、チタン等は水素ガスを透過すると共に、タ
ングステン等はアルゴンロガス等を透過し、更に結晶粒
界等の界面もこれらガス体を透過する作用かあ（）、こ
ねらの極細線を埋めこんだ板をガス・イオン争ビーム銃
先端に採用すれば、真空室側の真空度を落さずに、ガス
・イオン、ビームを放射できる作用がある。Palladium, titanium, etc. permeate hydrogen gas, tungsten, etc. permeate argon gas, etc., and interfaces such as crystal grain boundaries also permeate these gases (). If a plate is used at the tip of the gas/ion beam gun, it will be possible to emit gas, ions, and beams without reducing the degree of vacuum in the vacuum chamber.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示すガス書イオン瞥ビーム
銃のガス・イオン放出部の断面図である。FIG. 1 is a sectional view of a gas/ion discharge section of a gas ion beam gun showing an embodiment of the present invention.
すなわち、イオン・ビーム銃鏡体含Ｗｔ成するフランジ
の上面には、例えばパラジウム線を芯に周辺金鉄で形成
された棒を廷伸させて、パラジウム線３會０．１μｍ以
下極めて細く形成した棒を切断研磨にてプ１／−ト状と
したプｌ／−）２に貼付けて形成される。この場合、冒
圧ガス室側のＨ，ガスは、パラジウム線３内を透過し、
真空室側にプロトン（Ｈｆ） として引出されてプロ
トン−ビームが形成される。That is, on the upper surface of the flange of the ion beam gun body containing Wt, for example, a rod made of gold iron is extended around a palladium wire as a core, and three palladium wires are formed to be extremely thin (less than 0.1 μm). It is formed by pasting a rod onto a plate (1/-)2 which has been made into a plate shape by cutting and polishing. In this case, the H gas on the pressure gas chamber side passes through the palladium wire 3,
Protons (Hf) are extracted to the vacuum chamber side to form a proton beam.
第２図は本発明の他の実施例を示すガス９イオン・ビー
ム銃の要部の断面図である。すなわち、フランジ１の上
面には、シリコン単結晶事から成るプレート１２がイオ
ン書ビームあるいは電子線ビームにより融解再結晶化に
よって形成された結晶粒界を中心部に含んで貼付けられ
て成る。この場合には、Ｈ，ガスは、結晶粒界乃至透過
して、真空側にプロトン・イオンとして引出し、放出さ
れることとなる。FIG. 2 is a sectional view of the main parts of a gas 9 ion beam gun showing another embodiment of the present invention. That is, a plate 12 made of single crystal silicon is attached to the upper surface of the flange 1, with the crystal grain boundary formed by melting and recrystallization using an ion beam or an electron beam in the center. In this case, H and gas pass through the grain boundaries and are extracted to the vacuum side as proton ions and released.
同、粒界は２回の躾なる物質の界面を用いても良いこと
は云う丑でもない。Similarly, it goes without saying that the grain boundaries may be the interfaces of substances that are bound twice.
本発明の如く、ガス室側と真空室側を隔壁したガス・イ
オン・ビーム銃全形成する事により、ガス・ソースは、
ガス体の′！！まで良く、且つ、真空室側の真空度を落
さずに効率よく、且つ高密度の極微細ガス・イオン・ビ
ームを放出できる効果がある。As in the present invention, by forming the entire gas ion beam gun with partition walls between the gas chamber side and the vacuum chamber side, the gas source can be
Gas body'! ! This has the effect of emitting a high-density ultrafine gas ion beam efficiently and without reducing the degree of vacuum on the vacuum chamber side.
第１図及び第２図は、本発明の実施例を示す、ガス−イ
オン・ビーム銃の要部の断面図である。
１．１１・・・フランジ
２．１２・・・ブ１／−ト
５・・・・・・・・・・・・パラジウム１３・・・・・
・・・・結晶粒界
以上
出願人 セイコーエプソン株式会社
真空
真空
第２凶1 and 2 are cross-sectional views of essential parts of a gas-ion beam gun showing an embodiment of the present invention. 1.11...Flange 2.12...Button 5...Palladium 13...
・・・Grain boundary or above Applicant Seiko Epson Corporation Vacuum Vacuum No. 2
Claims (1)
ウム、チタン、タングステン等の極細線が埋め込まれて
形成されて成るか、または結晶粒界等の界面が形成され
て成る事を特徴とするイオン・ビーム銃。Ions characterized in that the gas ion emitting part of the gas ion beam gun is formed by embedding ultrafine wires of palladium, titanium, tungsten, etc., or by forming interfaces such as crystal grain boundaries.・Beam gun.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61264241A JP2646535B2 (en) | 1986-11-06 | 1986-11-06 | Ion beam gun |
| US07/107,424 US4902897A (en) | 1986-10-13 | 1987-10-13 | Ion beam gun and ion beam exposure device |
| KR1019870011307A KR930001889B1 (en) | 1986-10-13 | 1987-10-13 | Ion beam exposure mask |
| KR1019920019579A KR930001433B1 (en) | 1986-10-13 | 1992-10-23 | Ion-beam gun |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61264241A JP2646535B2 (en) | 1986-11-06 | 1986-11-06 | Ion beam gun |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63119135A true JPS63119135A (en) | 1988-05-23 |
| JP2646535B2 JP2646535B2 (en) | 1997-08-27 |
Family
ID=17400446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61264241A Expired - Lifetime JP2646535B2 (en) | 1986-10-13 | 1986-11-06 | Ion beam gun |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2646535B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63133440A (en) * | 1986-11-21 | 1988-06-06 | Seiko Epson Corp | Atom, molecule, and ion bean gun |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5894741A (en) * | 1981-11-30 | 1983-06-06 | Univ Kyoto | Negative ion producing method |
| JPS59130056A (en) * | 1983-01-17 | 1984-07-26 | Nec Corp | Proton beam illuminating source |
-
1986
- 1986-11-06 JP JP61264241A patent/JP2646535B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5894741A (en) * | 1981-11-30 | 1983-06-06 | Univ Kyoto | Negative ion producing method |
| JPS59130056A (en) * | 1983-01-17 | 1984-07-26 | Nec Corp | Proton beam illuminating source |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63133440A (en) * | 1986-11-21 | 1988-06-06 | Seiko Epson Corp | Atom, molecule, and ion bean gun |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2646535B2 (en) | 1997-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |