JPS63133440A - Atom, molecule, and ion bean gun - Google Patents

Atom, molecule, and ion bean gun

Info

Publication number
JPS63133440A
JPS63133440A JP61278199A JP27819986A JPS63133440A JP S63133440 A JPS63133440 A JP S63133440A JP 61278199 A JP61278199 A JP 61278199A JP 27819986 A JP27819986 A JP 27819986A JP S63133440 A JPS63133440 A JP S63133440A
Authority
JP
Japan
Prior art keywords
molecule
atom
single crystal
passed
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61278199A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP61278199A priority Critical patent/JPS63133440A/en
Priority to KR1019870011307A priority patent/KR930001889B1/en
Priority to US07/107,424 priority patent/US4902897A/en
Publication of JPS63133440A publication Critical patent/JPS63133440A/en
Priority to KR1019920019579A priority patent/KR930001433B1/en
Pending legal-status Critical Current

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  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To sequentially send out an atom, a molecule, or a radical one by one and to irradiate ion beams having uniform diameter into a high vacuum by passing the atom or the molecule through the crystal defect of a single crystal. CONSTITUTION:An atom or a molecule is passed through the crystal defect of a single crystal: the gas 3 or liquid of hydrogen atom or molecule is passed one by one through the crystal defect 2 in a single crystal 1 comprising Si, Au, W, Mo, and Pt. Hydrogen is passed in a form of H* radical 4 and irradiated as a H<+> ion beam 5. Thereby, the fine ion beams are irradiated into a high vacuum.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は極めて細い原子あるいは分子あるいはラジカル
あるいはイオンのビームを放射するビーム銃先端構造に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a beam gun tip structure that emits an extremely narrow beam of atoms, molecules, radicals, or ions.

〔従来の技術〕[Conventional technology]

従来、イオン・ビーム銃の先端構造としては、タングス
テン線針の先端に所望原子を濡らして放射させる方法が
最も一般的に用いられていた。
Conventionally, the most commonly used tip structure for an ion beam gun has been a method in which the tip of a tungsten wire needle is wetted with desired atoms and emitted.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、上°記従来技術によると、タングステン線針の
先端径によって、ビーム径がバラツキ、且つ放射雰囲気
が真空の場合には真空度が上がらないという問題点等が
あった。
However, according to the above-mentioned prior art, there are problems such as the beam diameter varies depending on the tip diameter of the tungsten wire needle, and the degree of vacuum cannot be increased when the radiation atmosphere is a vacuum.

本発明は、かかる従来技術の問題点をなくし、原子・分
子あるいはラジカルを1個づつ順番に送り出し、放出す
るビーム径のバラツキのないイオン・ビーム銃を高真空
中に放出するビーム銃先端構造を提供する事を目的とす
る◎ 〔問題点を解決するための手段〕 上記問題点を解決するために、本発明は、原子・分子ビ
ーム銃に於て、単結晶体内の結晶欠陥部に原子あるいは
分子を通過させる手段をとる。
The present invention eliminates the problems of the prior art and provides a beam gun tip structure that sequentially sends out atoms, molecules, or radicals one by one and releases an ion beam gun into a high vacuum with no variation in the emitted beam diameter. ◎ [Means for solving the problems] In order to solve the above problems, the present invention provides an atomic/molecular beam gun that injects atoms or Take measures to allow molecules to pass through.

〔作 用〕[For production]

単結晶体内の転位は、原子の格子のすき間と考える事が
出来、この原子のすき間には水素ガス体等は原子状ある
いは分子状あるいはラジカル状にて、極めて通過し易い
状態となり、これらの原子・分子を1個づつすき間を通
過させ放射させる事が出来る作・用がある◇ 〔実施例〕 以下、実施例により本発明を詳述する0第1図は本発明
の一実施例を示す原子・分子ビーム銃先端の模式図であ
る0すなわち、Slあるいは、Auq Ws M2S 
Pt等から成る単結晶格子1内に存在する結晶欠陥2に
は、一方に存在する水素(Hl)等の原子あるいは分子
のガス3あるいは液体材が1個づつ通過し、この場合に
はH1*                 +はHの
ラジウムとなって通過し、他方にHのイオン・ビーム5
となって放射されて成る0尚、単結晶格子10表面は、
エツチングにより結晶欠陥位置が確認されて成る。更に
結晶欠陥は螺旋転位であっても良い事は言うまでもない
。更に、単結晶体は単一金属に限らず合金でも良く、更
にはセラミックあるいは高分子体であっても良い事は言
うまでもない。
Dislocations in a single crystal can be thought of as gaps in the lattice of atoms, and hydrogen gas, etc., can pass through these gaps in atomic, molecular, or radical form very easily, and these atoms・It has the effect of allowing molecules to pass through gaps one by one and emit radiation. ◇ [Example] The present invention will be explained in detail with reference to examples below. Figure 1 shows an atomic diagram showing an example of the present invention.・Schematic diagram of the tip of the molecular beam gun 0, that is, Sl or Auq Ws M2S
Atom or molecular gas 3 or liquid material such as hydrogen (Hl) existing on one side passes through crystal defects 2 existing in a single crystal lattice 1 made of Pt or the like, one by one, and in this case, H1* + passes through as H radium, and the other H ion beam 5
The surface of the single crystal lattice 10 is radiated as
The location of crystal defects is confirmed by etching. Furthermore, it goes without saying that the crystal defect may be a screw dislocation. Furthermore, it goes without saying that the single crystal body is not limited to a single metal, but may be an alloy, or even a ceramic or a polymer.

〔発明の効果〕〔Effect of the invention〕

本発明による原子・分子あるいはイオン・ビーム銃先端
構造によると極めて細いこれらビームを、高真空中に放
射できる効果がある0
The tip structure of the atom/molecule or ion beam gun according to the present invention has the effect of emitting extremely narrow beams into a high vacuum.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す、原子・分子ビーム銃
先端模式図である0 1・・・単結晶格子 2・・・結晶欠陥 3・・・ガス 4・・・ラジカル 5・・・イオン・ビーム 以  上 出願人 セイコーエプソン株式会社 “1”*[f # lで、、a 14 ””J:+ン 327”ス ]
Fig. 1 is a schematic diagram of the tip of an atomic/molecular beam gun showing an embodiment of the present invention.・Ion Beam and above Applicant: Seiko Epson Corporation “1” * [f#l,,a14””J:+n327”]

Claims (1)

【特許請求の範囲】[Claims] 単結晶体内の結晶欠陥部に原子あるいは分子を通過させ
る事を特徴とする原子・分子・イオンビーム銃。
An atom/molecule/ion beam gun that allows atoms or molecules to pass through crystal defects within a single crystal.
JP61278199A 1986-10-13 1986-11-21 Atom, molecule, and ion bean gun Pending JPS63133440A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61278199A JPS63133440A (en) 1986-11-21 1986-11-21 Atom, molecule, and ion bean gun
KR1019870011307A KR930001889B1 (en) 1986-10-13 1987-10-13 Ion beam exposure mask
US07/107,424 US4902897A (en) 1986-10-13 1987-10-13 Ion beam gun and ion beam exposure device
KR1019920019579A KR930001433B1 (en) 1986-10-13 1992-10-23 Ion-beam gun

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61278199A JPS63133440A (en) 1986-11-21 1986-11-21 Atom, molecule, and ion bean gun

Publications (1)

Publication Number Publication Date
JPS63133440A true JPS63133440A (en) 1988-06-06

Family

ID=17593977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61278199A Pending JPS63133440A (en) 1986-10-13 1986-11-21 Atom, molecule, and ion bean gun

Country Status (1)

Country Link
JP (1) JPS63133440A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119135A (en) * 1986-11-06 1988-05-23 Seiko Epson Corp Ion beam gun

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119135A (en) * 1986-11-06 1988-05-23 Seiko Epson Corp Ion beam gun

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