JPS63118739A - Process for forming resist pattern - Google Patents
Process for forming resist patternInfo
- Publication number
- JPS63118739A JPS63118739A JP26396186A JP26396186A JPS63118739A JP S63118739 A JPS63118739 A JP S63118739A JP 26396186 A JP26396186 A JP 26396186A JP 26396186 A JP26396186 A JP 26396186A JP S63118739 A JPS63118739 A JP S63118739A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- intermediate layer
- resist pattern
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- IVRMZWNICZWHMI-UHFFFAOYSA-N Azide Chemical compound [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 229920002050 silicone resin Polymers 0.000 claims abstract description 6
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims abstract description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 8
- 229920005989 resin Polymers 0.000 abstract description 5
- 239000011347 resin Substances 0.000 abstract description 5
- 229920003986 novolac Polymers 0.000 abstract description 3
- 229920002554 vinyl polymer Polymers 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- DQFBYFPFKXHELB-UHFFFAOYSA-N Chalcone Natural products C=1C=CC=CC=1C(=O)C=CC1=CC=CC=C1 DQFBYFPFKXHELB-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 235000005513 chalcones Nutrition 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- DQFBYFPFKXHELB-VAWYXSNFSA-N trans-chalcone Chemical compound C=1C=CC=CC=1C(=O)\C=C\C1=CC=CC=C1 DQFBYFPFKXHELB-VAWYXSNFSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Abstract
Description
【発明の詳細な説明】
発明の概要
本発明は、半導体装置のパターン形成方法に関し、ラダ
ー構造シリコーン樹脂を三層構造レジストの中間層とし
て使用することにより解像性に優れたレジストパターン
を形成するものである。DETAILED DESCRIPTION OF THE INVENTION Summary of the Invention The present invention relates to a pattern forming method for semiconductor devices, and involves forming a resist pattern with excellent resolution by using a ladder structure silicone resin as an intermediate layer of a three-layer structure resist. It is something.
産業上の利用分野
本発明は、レジストパターン形成方法に関し、特に半導
体集積回路のレジストパターン形成方法に関する。INDUSTRIAL APPLICATION FIELD The present invention relates to a resist pattern forming method, and more particularly to a resist pattern forming method for semiconductor integrated circuits.
従来の技術
半導体集積回路の形成には、薄膜形成技術と写真食刻技
術（ホトリソグラフィあるいは電子線リソグラフィ）が
多用されている。これらの技術の進歩によって、半導体
単位素子はますます微細化され、ＬＳＩ 、 ＶＬＳＩ
のような大容量素子が実用化されている。2. Description of the Related Art Thin film formation technology and photolithography (photolithography or electron beam lithography) are often used to form semiconductor integrated circuits. With the advancement of these technologies, semiconductor unit elements have become increasingly finer, leading to LSI, VLSI
Large capacitance devices such as these have been put into practical use.
即ち、配線パターンについて言えば、被処理基板上に形
成した配線形成材料からなる薄膜の上にレジストを被覆
し、これに選択的に紫外線露光を施してレジストパター
ンを造り、これにウェットエツチングあるいはドライエ
ツチングを行って微細パターンを形成するパターン形成
法では、波長による制限から微細パターンの形成は１μ
ｍ以上の線幅のパターンに限られ、これ以下の微細パタ
ーンの形成は困難である。That is, regarding the wiring pattern, a resist is coated on a thin film made of a wiring forming material formed on the substrate to be processed, and this is selectively exposed to ultraviolet light to create a resist pattern, which is then subjected to wet etching or dry etching. In the pattern forming method that forms fine patterns by etching, the formation of fine patterns is limited to 1 μm due to wavelength limitations.
It is limited to patterns with a line width of m or more, and it is difficult to form fine patterns smaller than this.
一方、電子線のような電離放射線は波長が紫外線に比べ
て温かに短いので１μｍ未満の微細パターンの形成が可
能であり、そのためにＶＬＳ Ｉのような大容量素子の
形成には電子線リソグラフィが使用されている。On the other hand, since the wavelength of ionizing radiation such as electron beams is warmer and shorter than that of ultraviolet rays, it is possible to form fine patterns of less than 1 μm. Therefore, electron beam lithography is used to form large-capacity devices such as VLSI. It is used.
次に、ＬＳＩ 、 ＶＬＳＩ等のような半導体素子製造
プロセスにおいては多層化が行われているために基板表
面に１〜２μｍの段差を生じることが多く、かかる場合
に従来の単層レジスト法を適用すると微細パターンを高
精度で形成することは不可能になる。Next, in the manufacturing process of semiconductor devices such as LSI and VLSI, multilayering is performed, which often creates a step difference of 1 to 2 μm on the substrate surface, and in such cases, the conventional single-layer resist method is applied. This makes it impossible to form fine patterns with high precision.
そこで、まず下層レジストを用いて平坦化し、この上に
耐酸素ドライエツチング性の優れた上層レジストを薄く
形成してドライエツチングし、微細パターンを形成する
二層構造レジストあるいは下層レジストを用いて平坦化
し、その上に耐酸素ドライエツチング性の優れた中間層
を形成し、さらにその上に上層レジストを薄く形成して
ドライエツチングし、微細パターンを形成する三層構造
レジストといった多層レジスト法が適用されている。Therefore, first, a lower layer resist is used for planarization, a thin upper layer resist with excellent oxygen dry etching resistance is formed on top of this, dry etching is performed, and a two layer structure resist or a lower layer resist is used to form a fine pattern for planarization. A multilayer resist method has been applied, such as a three-layer structure resist, in which an intermediate layer with excellent oxygen dry etching resistance is formed on top of this, and a thin upper resist layer is formed on top of that and dry etched to form a fine pattern. There is.
発明が解決しようとする問題点 本発明はかかる三層構造レジストに関するものである。The problem that the invention seeks to solve The present invention relates to such a three-layer structured resist.
高段差をもつ基板上に精度よく微細パターンを形成する
方法として開発されている三層レジストは、下層の平坦
化層レジストと耐酸素プラ、ズマ性に優れる中間層と感
光性または惑電子性をもつ上層レジストから構成されて
いる。The three-layer resist, which has been developed as a method for forming fine patterns with high precision on substrates with high step differences, consists of a lower layer of flattening resist, an oxygen-resistant plastic, an intermediate layer with excellent smearing properties, and a photosensitive or electrophilic layer. It consists of an upper layer of resist.
ここで、下層レジストの必要条件としては、（１）
酸素プラズマで容易に劣化し、分解して気化し易いもの
、
（２）平坦化性の優れた材料であること、（３）上層レ
ジストとのなじみの良いこと、などを挙げることができ
、これに通する材料としてフェノールノボラック樹脂な
どがある。また、中間層には、
（１） 耐酸素プラズマ性に優れること、（２）低温
プロセスで形成できること、（３）ＵＶ露先により短時
間で硬化できること、（４） エツチング速度が速い
こと、といった条件が必要である。一方、上層レジスト
には耐酸素プラズマ性は必要なく、従来のレジストが使
用できる。しかし、かかる中間層の必要条件を満足する
材料は未だ実用化されていない。Here, the necessary conditions for the lower layer resist are (1)
(2) It is a material with excellent planarization properties, and (3) It is compatible with the upper layer resist. There are materials such as phenol novolac resin that can be passed through. In addition, the intermediate layer has the following properties: (1) It has excellent oxygen plasma resistance, (2) It can be formed in a low-temperature process, (3) It can be cured in a short time by UV exposure, and (4) It has a fast etching speed. Conditions are required. On the other hand, oxygen plasma resistance is not required for the upper layer resist, and conventional resists can be used. However, a material that satisfies the requirements for such an intermediate layer has not yet been put into practical use.
本発明の目的は、従って、上記の如き条件を十分に満足
することのできる材料を三層構造レジストの中間層とし
て用いるパターン形成方法を提供することにある。Therefore, an object of the present invention is to provide a pattern forming method using a material that can fully satisfy the above conditions as an intermediate layer of a three-layer resist.
問題点を解決するための手段
本発明は、下記一般式、
〔上式中、Ｒはビニル基またはアリル基を表し、ｎは正
の整数を表す〕
で示されるシリコーン樹脂とモノアジドまたはビスアジ
ド化合物との混合物を三層構造レジストの中間層として
使用することを特徴とする、レジストパターン形成方法
を提供する。Means for Solving the Problems The present invention provides a silicone resin represented by the following general formula: [In the above formula, R represents a vinyl group or an allyl group, and n represents a positive integer] and a monoazide or bisazide compound. Provided is a method for forming a resist pattern, characterized in that a mixture of the following is used as an intermediate layer of a three-layer resist.
本発明らは、即ち、シリコーンポリマーが耐酸素プラズ
マ性に優れた材料であることに着目し、これに感光性を
付与することにより、優れた三層構造レジスト用の中間
層を提供することができたものである。Specifically, the present inventors focused on the fact that silicone polymer is a material with excellent oxygen plasma resistance, and by imparting photosensitivity to silicone polymer, it was possible to provide an excellent intermediate layer for a three-layer resist. It was made.
本発明に係る上記一般式において、ｎは好ましくは１０
〜１０００であり、さらに好ましくは５０〜５００であ
る。In the above general formula according to the present invention, n is preferably 10
-1000, more preferably 50-500.
本発明に有用なモノアジド化合物の例としては、がある
。また、ビスアジド化合物の例としては、いシ！
υ■
がある。Examples of monoazide compounds useful in the present invention include. Also, as an example of a bisazide compound, Ishi! There is υ■.
また、本発明に有用な三層構造レジストの下層レジスト
に適する材料としては、フェノールノボラック樹脂など
がある。一方、上層レジストとしては、従来公知のレジ
ストが使用できる。Furthermore, materials suitable for the lower layer resist of the three-layer structure resist useful in the present invention include phenol novolak resin. On the other hand, a conventionally known resist can be used as the upper layer resist.
作用
本発明に従って、前述のシリコーン樹脂とモノアジドま
たはビスアジド化合物との混合物を三層構造レジストの
中間層として使用することにより、解像性に優れたレジ
ストパターンの形成を実現することができる。Function According to the present invention, a resist pattern with excellent resolution can be formed by using a mixture of the silicone resin and a monoazide or bisazide compound as an intermediate layer of a three-layer resist.
実施例 以下に、実施例を挙げて、本発明をさらに説明する。Example The present invention will be further explained below with reference to Examples.
合成例１
メチルイソブチルケトン（ＭＩＢＫ） １００ ｍ
Ｉｌにトリエチルアミン１８ｍ１を加え、ビニルトリク
ロルシラン３０ｇを混合し、次いで一６０℃に冷却した
。これにイオン交換水１３ｍｊ！を滴下した後、反応溶
液を徐々に昇温した。窒素ガスでバブリングを行いなが
ら、１２０℃で５時間還流し、縮合反応を行った。その
後、反応液を５〜６回水洗し、ＭＩＢＫ層を分取した。Synthesis Example 1 Methyl isobutyl ketone (MIBK) 100 m
18 ml of triethylamine was added to Il, and 30 g of vinyltrichlorosilane was added thereto, followed by cooling to -60°C. Add this to 13mj of ion exchange water! was added dropwise, the temperature of the reaction solution was gradually raised. While bubbling with nitrogen gas, the mixture was refluxed at 120° C. for 5 hours to perform a condensation reaction. Thereafter, the reaction solution was washed with water 5 to 6 times, and the MIBK layer was separated.
次に、３０ ｍ ｌのピリジンを加え、６０℃で３時間
反応させ、未反応水酸基をシリル化した。反応液を１０
回水洗した後、アセトニトリルを加え、樹脂を沈澱回収
した。得られた樹脂をベンゼン５０ｍｌに溶解し、凍結
乾燥を行った。Next, 30 ml of pyridine was added and reacted at 60°C for 3 hours to silylate unreacted hydroxyl groups. 10% of the reaction solution
After washing twice with water, acetonitrile was added to precipitate and collect the resin. The obtained resin was dissolved in 50 ml of benzene and freeze-dried.
得られた樹脂はＭｗ＝５．ＯＸ １０’ 、Ｍｗ／Ｍｎ
＝ １．８であった。The obtained resin had Mw=5. OX 10', Mw/Mn
= 1.8.
実施例１
合成例１で得られたシリル化ポリビニルシルセスキオキ
サン１ｇをＭＩＢＫ１５ｍｌに溶解し、感光剤として４
，４′−ジアジドカルコン０．０７ｇを加え、レジスト
溶液を調製した。Example 1 1 g of silylated polyvinyl silsesquioxane obtained in Synthesis Example 1 was dissolved in 15 ml of MIBK, and 4
, 0.07 g of 4'-diazide chalcone was added to prepare a resist solution.
添付の第１図に示すようにして、シリコン基板１上に下
層レジスト２として、シラプレー社製マイクロポジット
１３５０レジストを膜厚２μｍとなるように塗布した後
、２００℃１時間の加熱を行い硬化させた〔工程（１）
〕。その上に先に調製したレジスト溶液を膜厚０．２μ
ｍとなるように塗布し、１２０℃で１５分間の溶剤乾燥
の後、ＵＶ露光（３５０ｎｍ）により硬化させて、中間
層３を形成した〔工程（２）〕。さらに、上層レジスト
４として、ポジ聖霊子線しジスＩ−ＣＭＲ（富士通研究
所）を膜厚が０．２μｍとなるように塗布し〔工程ｆ３
））、溶剤乾燥の後、電子線露光および現像を行った〔
工程（４）〕。As shown in the attached Figure 1, Microposit 1350 resist manufactured by Silaplay Co., Ltd. was coated on the silicon substrate 1 as the lower resist 2 to a thickness of 2 μm, and then heated at 200° C. for 1 hour to harden it. [Process (1)
]. On top of that, apply the previously prepared resist solution to a film thickness of 0.2 μm.
m, and after solvent drying at 120° C. for 15 minutes, it was cured by UV exposure (350 nm) to form the intermediate layer 3 [Step (2)]. Further, as the upper resist 4, a positive Holy Spirit I-CMR (Fujitsu Laboratories) was applied to a film thickness of 0.2 μm [Step f3
)) After solvent drying, electron beam exposure and development were carried out [
Step (4)].
次に、上層レジストパターンをマスクとして、Ｃ３Ｆ１
１ガスにより中間層のエツチングを行い、上層パターン
を中間層に転写した〔工程（５）〕。さらに、中間層を
マスクとして、酸素ガスにより下層レジストのエツチン
グを行い、中間層パターンを下層に転写した〔工程（６
）〕。このようにして形成されたレジストパターンは、
０．２μｍのラインアンドスペースを解像することがで
きた。Next, using the upper resist pattern as a mask, C3F1
The intermediate layer was etched using 1 gas, and the upper layer pattern was transferred to the intermediate layer [Step (5)]. Furthermore, using the intermediate layer as a mask, the lower resist layer was etched with oxygen gas, and the intermediate layer pattern was transferred to the lower layer [Step (6)
)]. The resist pattern formed in this way is
It was possible to resolve lines and spaces of 0.2 μm.
発明の効果
本発明によれば、高解像度のレジストパターンの形成を
実現することができる。Effects of the Invention According to the present invention, it is possible to form a resist pattern with high resolution.
第１図は、本発明の方法による三層構造レジストのパタ
ーン形成方法を示す工程図である。FIG. 1 is a process diagram showing a method for forming a pattern of a three-layer resist according to the method of the present invention.
Claims (1)
の整数を表す〕 で示されるシリコーン樹脂とモノアジドまたはビスアジ
ド化合物との混合物を三層構造レジストの中間層として
使用することを特徴とする、レジストパターン形成方法
。[Claims] 1. A silicone resin represented by the following general formula: ▲There are mathematical formulas, chemical formulas, tables, etc.▼ [In the above formula, R represents a vinyl group or an allyl group, and n represents a positive integer] 1. A method for forming a resist pattern, comprising using a mixture of and a monoazide or bisazide compound as an intermediate layer of a three-layer resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26396186A JPS63118739A (en) | 1986-11-07 | 1986-11-07 | Process for forming resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26396186A JPS63118739A (en) | 1986-11-07 | 1986-11-07 | Process for forming resist pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63118739A true JPS63118739A (en) | 1988-05-23 |
Family
ID=17396640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26396186A Pending JPS63118739A (en) | 1986-11-07 | 1986-11-07 | Process for forming resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63118739A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02251961A (en) * | 1989-03-27 | 1990-10-09 | Matsushita Electric Ind Co Ltd | Fine pattern forming material and pattern forming method |
| US6743885B2 (en) | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
-
1986
- 1986-11-07 JP JP26396186A patent/JPS63118739A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02251961A (en) * | 1989-03-27 | 1990-10-09 | Matsushita Electric Ind Co Ltd | Fine pattern forming material and pattern forming method |
| US6743885B2 (en) | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
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