JPS63279245A - Negative resist composition - Google Patents
Negative resist compositionInfo
- Publication number
- JPS63279245A JPS63279245A JP11360587A JP11360587A JPS63279245A JP S63279245 A JPS63279245 A JP S63279245A JP 11360587 A JP11360587 A JP 11360587A JP 11360587 A JP11360587 A JP 11360587A JP S63279245 A JPS63279245 A JP S63279245A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- light
- deep
- compsn
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 title description 9
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 claims abstract description 5
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000012965 benzophenone Substances 0.000 claims abstract description 5
- -1 methacryloyl group Chemical group 0.000 claims abstract description 3
- 229920002554 vinyl polymer Polymers 0.000 claims abstract 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims abstract 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims abstract 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 229920002050 silicone resin Polymers 0.000 abstract description 5
- 229920005989 resin Polymers 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OTKCEEWUXHVZQI-UHFFFAOYSA-N 1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(=O)CC1=CC=CC=C1 OTKCEEWUXHVZQI-UHFFFAOYSA-N 0.000 description 1
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- JLQFVGYYVXALAG-CFEVTAHFSA-N yasmin 28 Chemical compound OC1=CC=C2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1.C([C@]12[C@H]3C[C@H]3[C@H]3[C@H]4[C@@H]([C@]5(CCC(=O)C=C5[C@@H]5C[C@@H]54)C)CC[C@@]31C)CC(=O)O2 JLQFVGYYVXALAG-CFEVTAHFSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明は、ラダー型シリコーン樹脂にベンゾフェノンま
たは２．２−ジメトキシ−２−フェニルアセトフェノン
を添加してなるネガ型レジスト組成物に関する。この組
成物は、Ｄｅｅｐ−ＵＶ光に高い感度を有し、二層構造
レジストの上層レジストとして特に有用である。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a negative resist composition prepared by adding benzophenone or 2,2-dimethoxy-2-phenylacetophenone to a ladder-type silicone resin. This composition has high sensitivity to deep-UV light and is particularly useful as an upper layer resist of a two-layer resist.
本発明はネガ型レジスト組成物に関し、更に詳しくは二
層構造レジストの上層レジスト材料として有用であり、
Ｄｅｅｐ−ＵＶ光に高い感度を存するネガ型レジスト組
成物に関する。The present invention relates to a negative resist composition, and more specifically, it is useful as an upper layer resist material of a two-layer resist.
The present invention relates to a negative resist composition that has high sensitivity to deep-UV light.
ＬＳＩの高集積化に伴い、ＬＳＩのパターン幅は益々微
細化される傾向にある。現在の２５６ＫＤＲＡＭの最少
線幅は約１．２μｍであり、本パターンの形成はｇ−１
ｉｎｅを用いた縮少投影露光により、ポジ型フォトレジ
ストを用いて行われる。しかし、このような縮少投影露
光は、レジスト膜中に発生する定在波や配線からの側面
反射、焦点深度が浅い等の問題で解像性が低下する。そ
こで、かかる問題を解決するプロセスの開発が要望され
ている。As LSIs become more highly integrated, the pattern width of LSIs tends to become smaller and smaller. The minimum line width of the current 256K DRAM is about 1.2 μm, and the formation of this pattern is g-1
This is done using a positive photoresist by reduced projection exposure using ine. However, such reduced projection exposure reduces resolution due to problems such as standing waves generated in the resist film, side reflections from wiring, and shallow depth of focus. Therefore, there is a demand for the development of a process to solve this problem.
現在、二層構造レジストプロセスが検討されている。二
層構造の上層レジスト材料としては、シリコン原子を含
有するポリマとアジドあるいはビスアジド化合物の混合
体より成るネガ型レジスト、およびシリコン原子を含有
するアルカリ可溶性樹脂と０−ナフトキノンジアジドｍ
１体との混合体より成るポジ型レジストがある。ポジ型
レジストは、耐酸素プラズマ性が不十分であり、上層パ
ターンの転写時にパターン幅のシフトが起こる。またネ
ガ型レジストでは、感光剤がアジド化合物であり、吸収
光のピークが３５０ｎｍ付近のため、Ｄｅｅｐ−ＵＶ光
に対しては感度が低い等の問題点があり、これらの問題
点を解消する二層構造の上層レジスト材料の開発が要望
されている。Currently, a two-layer resist process is being considered. The upper resist materials of the two-layer structure include a negative resist made of a mixture of a polymer containing silicon atoms and an azide or bisazide compound, and an alkali-soluble resin containing silicon atoms and O-naphthoquinone diazide m
There is a positive resist consisting of a mixture of 1 and 1. A positive resist has insufficient oxygen plasma resistance, and a pattern width shift occurs when an upper layer pattern is transferred. In addition, in negative resists, the photosensitizer is an azide compound, and the peak of absorption light is around 350 nm, so there are problems such as low sensitivity to deep-UV light. There is a need for the development of upper layer resist materials with a layered structure.
従来のポジ型二層構造レジストとしては、日立のＡＳＴ
ＲＯ、Ｎ Ｅ Ｃの５ＩＰＲや従来型ポジ型フォトレジ
ストにシリコン化合物を混入したものが発表されている
。しかし、いずれのレジストも耐酸素プラズマ性が不十
分であり、上層レジストパターンの転写時にパターン幅
のシフトが起こる。Hitachi's AST is a conventional positive two-layer resist.
RO, NEC 5IPR and conventional positive type photoresists mixed with silicon compounds have been announced. However, all resists have insufficient oxygen plasma resistance, and a shift in pattern width occurs during transfer of the upper resist pattern.
従来のネガ型二層構造レジストとしては、ＮＴＴ（７）
ＭＳＮＲＮＥＣ（７）ＭＡＳ 、 ＴＲＳ等がある。し
かし、これらのレジストはビスアジド化合物を感光剤と
しているため、その吸収感度は３５０〜３７０ｎｍを極
大としており、Ｄｅｅｐ−ＵＶ光に対する感度は極めて
低い。As a conventional negative two-layer resist, NTT (7)
MSNRNEC (7) MAS, TRS, etc. However, since these resists use a bisazide compound as a photosensitizer, their absorption sensitivity is maximized at 350 to 370 nm, and their sensitivity to deep-UV light is extremely low.
しかして、本発明は、Ｄｅｅｐ−ＵＶ光に対して高い感
度を有する、二層構造レジストの上層レジストとして有
用な材料を提供しようとするものである。Therefore, the present invention aims to provide a material that has high sensitivity to deep-UV light and is useful as an upper layer resist of a two-layer resist.
本発明によれば、一般式、
ビ
〔上式中、ｎは１０〜１０００の整数であり、Ｒは同一
であっても相異っていてもよく、それぞれビニル、アリ
ル、アクリロイルまたはメタクリロイル基を表す〕
で示されるシリコーン樹脂とベンゾフェノンまたは、２
，２−ジメトキシ−２−フェニルアセトフェノンとから
なるネガ型レジスト組成物が提供される。According to the present invention, the general formula, silicone resin and benzophenone or 2
, 2-dimethoxy-2-phenylacetophenone.
即ち、本発明者の検討によれば、上述の問題点は、耐酸
素プラズマ性に優れる上記一般式のラグー型シリコーン
樹脂に、ベンゾフェノンまたは２゜２−ジメトキシ−２
−フェニルアセトフェノンを添加して、Ｄｅｅｐ−ＵＶ
光に対する感度を付与することにより解決することがで
きるということが、見出されたのである。That is, according to the study of the present inventors, the above-mentioned problem can be solved by adding benzophenone or 2゜2-dimethoxy-2 to the ragout type silicone resin of the above general formula which has excellent oxygen plasma resistance.
-Deep-UV by adding phenylacetophenone
It was discovered that this problem could be solved by imparting sensitivity to light.
本発明に係るネガ型レジスト組成物は、Ｄｅｅｐ−ＵＶ
光、特に波長２４８ｎｍの光、に対して高い感度を有し
、二層構造用上層レジスト材料として特に有用である。The negative resist composition according to the present invention has Deep-UV
It has high sensitivity to light, especially light with a wavelength of 248 nm, and is particularly useful as an upper layer resist material for a two-layer structure.
以下、実施例により本発明を更に説明する。 The present invention will be further explained below with reference to Examples.
合成例１
メチルイソブチルケトン（ＭＴＢＫ）１００ ｍｌにピ
リジン１８ｒｒｌを加え、−２０℃に冷却した。これに
、ビニルトリクロルシラン３０ｇ２ついでイオン交換水
１８ｍ＃、を滴下し、反応溶液を徐々に昇温した。さら
に、窒素ガスでバブリングを行ないながら、１２０℃で
５時間縮重合反応を行った。反応終了後、溶液を５〜６
回水洗し、ＭＩＢＫｊｉｉを分取した０次に、トリメチ
ルクロルシラン３０ｍｌ１とピリジン３０ｍ１を加え、
６０℃で２時間の加熱を行ない、未反応水酸基をシリル
化した０次に、反応溶液を十回水洗し、アセトニトリル
中に投入してシリル化ポリビニルシルセスキオキサンを
沈澱回収した。得られた樹脂をベンゼン５９ｍ１に溶解
し、凍結乾燥を行った。Synthesis Example 1 18 rrl of pyridine was added to 100 ml of methyl isobutyl ketone (MTBK), and the mixture was cooled to -20°C. To this, 30 g of vinyltrichlorosilane and 18 m# of ion-exchanged water were added dropwise, and the temperature of the reaction solution was gradually raised. Further, a condensation polymerization reaction was carried out at 120° C. for 5 hours while bubbling with nitrogen gas. After the reaction is complete, dilute the solution for 5 to 6
After washing twice with water and separating MIBKjii, 30 ml of trimethylchlorosilane and 30 ml of pyridine were added.
Heating was carried out at 60° C. for 2 hours to silylate unreacted hydroxyl groups.Then, the reaction solution was washed ten times with water and poured into acetonitrile to precipitate and collect silylated polyvinylsilsesquioxane. The obtained resin was dissolved in 59 ml of benzene and freeze-dried.
本合成例により得られたシリル化ポリビニルシルセスキ
オキサンは、Ｍｎ ＝５．ＯＸ １０’ 、 Ｍｗ／Ｍ
ｎ＝１．８であった。The silylated polyvinylsilsesquioxane obtained in this synthesis example had Mn = 5. OX 10', Mw/M
n=1.8.
実施例１
合成例１で得たシリル化ポリビニルシルセスキオキサン
１ｇを旧ＢＫ９ｇに溶解し、感光剤として２．２−ジメ
トキシ−２−フェニルアセトフェノン０．０５ｇを添加
してレジスト溶液を調製した。Example 1 1 g of silylated polyvinylsilsesquioxane obtained in Synthesis Example 1 was dissolved in 9 g of old BK, and 0.05 g of 2,2-dimethoxy-2-phenylacetophenone was added as a photosensitizer to prepare a resist solution.
シリコン基板上に、下層レジストとして肝−１３５０レ
ジスト（シラプレー社製）を膜厚・２μｍとなるように
スピンボートし、２００℃、１時間の加熱を行なって硬
化させた。この膜上に上記レジスト溶液を乾燥後の膜厚
が０．２μｍとなるようスピンコードし、６０℃で２０
分間の溶剤乾燥を行った。On the silicon substrate, a lower layer resist, Kiba-1350 resist (manufactured by Silapray Co., Ltd.) was spin-boated to a film thickness of 2 μm and cured by heating at 200° C. for 1 hour. The above resist solution was spin-coded onto this film so that the film thickness after drying was 0.2 μm, and
Solvent drying was performed for 1 minute.
この試料に、２４８ｎｍのＤｅｅｐ−ＵＶ光を用いてソ
フトコンタクトによるマスク露光を行った。ついで、Ｍ
ＩＢＫに３０秒間浸漬して現像し、さらにイソプロピル
アルコールにて３０秒間リンス処理を行った。つぎに、
被処理基板を平行平板型ドライエツチング装置（日型ア
ネルバ社製）にセットし、酸素プラズマにてエツチング
を行ない、上層パターンを下層に転写した。この結果、
本レジストの感度は５０＋＋＋Ｊ／ａｊで、０．５μｍ
のラインアンドスペースパターンを解像できた。This sample was subjected to soft contact mask exposure using 248 nm deep-UV light. Next, M
The film was developed by immersing it in IBK for 30 seconds, and was further rinsed with isopropyl alcohol for 30 seconds. next,
The substrate to be processed was set in a parallel plate type dry etching device (manufactured by Nikki Anelva Co., Ltd.), and etching was performed using oxygen plasma to transfer the upper layer pattern to the lower layer. As a result,
The sensitivity of this resist is 50+++J/aj and 0.5μm
was able to resolve line and space patterns.
本発明によるレジスト組成物を二層構造レジストの上層
レジストに用い、Ｄｅｅｐ−［ＪＶ露光を行うことによ
ってサブミクロンパターンを形成することができる。A submicron pattern can be formed by using the resist composition according to the present invention as an upper layer resist of a two-layer structure resist and performing Deep-[JV exposure.
Claims (1)
であっても相異っていてもよく、それぞれビニル、アリ
ル、アクリロイルまたはメタクリロイル基を表す〕 で示されるシリコーン樹脂とベンゾフェノンまたは、２
，２−ジメトキシ−２−フェニルアセトフェノンとから
なるネガ型レジスト組成物。 ２、二層構造レジストの上層レジストとして用いられる
、特許請求の範囲第１項記載の組成物。 ３、Ｄｅｅｐ−ＵＶ光用レジストとして用いられる、特
許請求の範囲第１項記載の組成物。[Claims] 1. General formula, ▲ Numerical formula, chemical formula, table, etc. ▼ [In the above formula, n is an integer from 10 to 1000, and R may be the same or different. , each representing a vinyl, allyl, acryloyl or methacryloyl group] and benzophenone or 2
, 2-dimethoxy-2-phenylacetophenone. 2. The composition according to claim 1, which is used as an upper layer resist of a two-layer resist. 3. The composition according to claim 1, which is used as a resist for deep-UV light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11360587A JPS63279245A (en) | 1987-05-12 | 1987-05-12 | Negative resist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11360587A JPS63279245A (en) | 1987-05-12 | 1987-05-12 | Negative resist composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63279245A true JPS63279245A (en) | 1988-11-16 |
Family
ID=14616451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11360587A Pending JPS63279245A (en) | 1987-05-12 | 1987-05-12 | Negative resist composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63279245A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0464614A2 (en) * | 1990-06-25 | 1992-01-08 | Matsushita Electronics Corporation | A composition having sensitivity to light or radiation |
| US6731857B2 (en) | 2001-03-29 | 2004-05-04 | Shipley Company, L.L.C. | Photodefinable composition, method of manufacturing an optical waveguide with the photodefinable composition, and optical waveguide formed therefrom |
| US6842577B2 (en) | 2002-12-02 | 2005-01-11 | Shipley Company L.L.C. | Photoimageable waveguide composition and waveguide formed therefrom |
| WO2006008073A2 (en) * | 2004-07-16 | 2006-01-26 | Kodak Polychrome Graphics Gmbh | Lithographic printing plates with high print run stability |
| US7024093B2 (en) | 2002-12-02 | 2006-04-04 | Shipley Company, Llc | Methods of forming waveguides and waveguides formed therefrom |
| US7072563B2 (en) | 2003-11-25 | 2006-07-04 | Rohm And Haas Electronic Materials Llc | Waveguide compositions and waveguides formed therefrom |
| US7072564B2 (en) | 2003-11-25 | 2006-07-04 | Rohm And Haas Electronic Materials Llc | Waveguide compositions and waveguides formed therefrom |
| US7072565B2 (en) | 2004-04-14 | 2006-07-04 | Rohm And Haas Electronic Materials Llc | Waveguide compositions and waveguides formed therefrom |
-
1987
- 1987-05-12 JP JP11360587A patent/JPS63279245A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0464614A2 (en) * | 1990-06-25 | 1992-01-08 | Matsushita Electronics Corporation | A composition having sensitivity to light or radiation |
| US5378585A (en) * | 1990-06-25 | 1995-01-03 | Matsushita Electronics Corporation | Resist composition having a siloxane-bond structure |
| US5547808A (en) * | 1990-06-25 | 1996-08-20 | Matsushita Electronics Corporation | Resist composition having a siloxane-bond structure |
| US5554465A (en) * | 1990-06-25 | 1996-09-10 | Matsushita Electronics Corporation | Process for forming a pattern using a resist composition having a siloxane-bond structure |
| US6731857B2 (en) | 2001-03-29 | 2004-05-04 | Shipley Company, L.L.C. | Photodefinable composition, method of manufacturing an optical waveguide with the photodefinable composition, and optical waveguide formed therefrom |
| US6842577B2 (en) | 2002-12-02 | 2005-01-11 | Shipley Company L.L.C. | Photoimageable waveguide composition and waveguide formed therefrom |
| US7024093B2 (en) | 2002-12-02 | 2006-04-04 | Shipley Company, Llc | Methods of forming waveguides and waveguides formed therefrom |
| US7072563B2 (en) | 2003-11-25 | 2006-07-04 | Rohm And Haas Electronic Materials Llc | Waveguide compositions and waveguides formed therefrom |
| US7072564B2 (en) | 2003-11-25 | 2006-07-04 | Rohm And Haas Electronic Materials Llc | Waveguide compositions and waveguides formed therefrom |
| US7072565B2 (en) | 2004-04-14 | 2006-07-04 | Rohm And Haas Electronic Materials Llc | Waveguide compositions and waveguides formed therefrom |
| WO2006008073A2 (en) * | 2004-07-16 | 2006-01-26 | Kodak Polychrome Graphics Gmbh | Lithographic printing plates with high print run stability |
| WO2006008073A3 (en) * | 2004-07-16 | 2007-03-15 | Kodak Polychrome Graphics Gmbh | Lithographic printing plates with high print run stability |
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