JPH01204043A - Resist composition - Google Patents
Resist compositionInfo
- Publication number
- JPH01204043A JPH01204043A JP2740388A JP2740388A JPH01204043A JP H01204043 A JPH01204043 A JP H01204043A JP 2740388 A JP2740388 A JP 2740388A JP 2740388 A JP2740388 A JP 2740388A JP H01204043 A JPH01204043 A JP H01204043A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- formula
- benzophenone
- silylated
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 15
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000012965 benzophenone Substances 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 239000003849 aromatic solvent Substances 0.000 claims abstract description 3
- 150000002576 ketones Chemical class 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 6
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 abstract description 4
- 125000003342 alkenyl group Chemical group 0.000 abstract description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 abstract description 3
- -1 preferably Chemical group 0.000 abstract description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 abstract description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 abstract description 2
- 239000008096 xylene Substances 0.000 abstract description 2
- 150000008366 benzophenones Chemical class 0.000 abstract 1
- KGGOIDKBHYYNIC-UHFFFAOYSA-N ditert-butyl 4-[3,4-bis(tert-butylperoxycarbonyl)benzoyl]benzene-1,2-dicarboperoxoate Chemical compound C1=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=CC=C1C(=O)C1=CC=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=C1 KGGOIDKBHYYNIC-UHFFFAOYSA-N 0.000 abstract 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000005453 ketone based solvent Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
二層構造レジストの上層レジスト材料として有用なレジ
スト組成物に関し、
Ｄｅｅｐ −ＵＶ光に高い感度を有するネガ型レジスト
材料を得るために、
下記式■、
〔上式中、ｎは１０〜１０００の整数を表し、Ｒはアル
ケニル基を表し、同一であっても異なっていても良い。[Detailed Description of the Invention] [Summary] Regarding a resist composition useful as an upper layer resist material of a two-layer structure resist, in order to obtain a negative resist material having high sensitivity to Deep-UV light, the following formula (1), [ In the above formula, n represents an integer of 10 to 1000, and R represents an alkenyl group, which may be the same or different.
〕
で示されるシリル化ポリオルガノシルセスキオキサンと
下記式■、
〔上式中、Ｒ′は炭素数１〜４の低級アルキル基を表す
〕
で示されるテトラ（アルキルペルオキシカルボニル）ベ
ンゾフェノンとを芳香族系溶剤もしくはケトン系溶剤に
溶解して構成する。] A silylated polyorganosilsesquioxane represented by the following formula (1), [In the above formula, R' represents a lower alkyl group having 1 to 4 carbon atoms] Tetra(alkylperoxycarbonyl)benzophenone represented by the following formula It is formed by dissolving it in a group-based solvent or a ketone-based solvent.
本発明は、レジスト組成物に関する。本発明に係るレジ
スト組成物は、二層構造レジストの上層レジスト材料と
して有用である。The present invention relates to a resist composition. The resist composition according to the present invention is useful as an upper layer resist material of a two-layer resist.
ＬＳＩの高集積化に伴い、ＬＳＩのパターン幅は益々微
細化される傾向にある。現在の２５６ＫＤＲＡＭの最少
線幅は約１．２−であり、本パターンの形成はｇ−１ｉ
ｎｅを用いた縮少投影露光により、ポジ型フォトレジス
トを用いて行われる。しかし、このような縮少投影露光
は、レジスト膜中に発生する定在波や配線からの側面反
射、焦点深度が浅い等の問題で解像性が低下する。そこ
で、かかる問題を解決するプロセスの開発が要望されて
いる。現在、二層構造レジストプロセスが検討されてい
る。As LSIs become more highly integrated, the pattern width of LSIs tends to become smaller and smaller. The minimum line width of current 256K DRAM is about 1.2-, and the formation of this pattern is g-1i.
This is done using a positive photoresist by reduced projection exposure using ne. However, such reduced projection exposure reduces resolution due to problems such as standing waves generated in the resist film, side reflections from wiring, and shallow depth of focus. Therefore, there is a need to develop a process that solves this problem. Currently, a two-layer resist process is being considered.
二層構造レジストの上層レジスト材料としては、シリコ
ン原子を含有するポリマーとアジドあるいはビスアジド
化合物の混合体よりなるネガ型レジスト、およびシリコ
ン原子を含有するアルカリ可溶性樹脂とＯ−ナフトキノ
ンジアジド誘導体との混合体よりなるポジ型レジストが
ある。ポジ型レジストは、耐酸素プラズマ性が不十分で
あり、上層パターンの転写時にパターン幅のシフトが起
こる。また、ネガ型レジストでは、感光剤がアジド化合
物であり、吸収光のピークが３５０ｎｍ付近にあるため
、Ｄｅｅｐ−ＵＶ光に対しては感度が低い等の問題点が
あり、これらの問題点を解消する二層構造レジストの上
層レジスト材料の開発が要望されている。The upper layer resist material of the two-layer resist is a negative resist made of a mixture of a polymer containing silicon atoms and an azide or bisazide compound, and a mixture of an alkali-soluble resin containing silicon atoms and an O-naphthoquinonediazide derivative. There are several positive resists. A positive resist has insufficient oxygen plasma resistance, and a pattern width shift occurs when an upper layer pattern is transferred. In addition, in negative resists, the photosensitizer is an azide compound, and the peak of absorption light is around 350 nm, so there are problems such as low sensitivity to deep-UV light, and these problems have been solved. There is a need for the development of a resist material for the upper layer of a two-layer resist.
本発明は、従って、二層構造レジストの上層レジスト材
料として用いることができ、Ｄｅｅｐ −ＵＶ光（特に
、波長２５０ｎｍ（ｊ近の光）に高い感度を有するネガ
型レジスト材料を提供することを目的とする。本発明は
、また、そのような材料を二層構造レジストの上層レジ
スト材料として用いるパターン形成方法を提供する。Therefore, an object of the present invention is to provide a negative resist material that can be used as an upper layer resist material of a two-layer resist and has high sensitivity to deep-UV light (particularly, light at a wavelength of 250 nm (near j). The present invention also provides a pattern forming method using such a material as an upper resist material of a two-layer resist.
本発明は、即ち、下記式！、
〔上式中、ｎはｌＯ〜１０００の整数を表し、Ｒはアル
ケニル基を表し、同一であっても異なっていても良い。In other words, the present invention is based on the following formula! , [In the above formula, n represents an integer of 10 to 1000, R represents an alkenyl group, and may be the same or different.
〕
で示されるシリル化ポリオルガノシルセスキオキサンと
下記式■、
〔上式中、Ｒ′は炭素数１〜４の低級アルキル基を表す
〕
で示されるテトラ（アルキルペルオキシカルボニル）ベ
ンゾフェノンとを芳香族系溶剤もしくはケトン系溶剤に
溶解してなるレジスト組成物を提供する。] A silylated polyorganosilsesquioxane represented by the following formula (1), [In the above formula, R' represents a lower alkyl group having 1 to 4 carbon atoms] Tetra(alkylperoxycarbonyl)benzophenone represented by the following formula Provided is a resist composition dissolved in a group-based solvent or a ketone-based solvent.
本発明は、また、上記レジスト組成物を二層構造レジス
トの上層レジスト材料として用いることを特徴とするパ
ターン形成方法を提供する。The present invention also provides a pattern forming method characterized in that the above resist composition is used as an upper layer resist material of a two-layer structure resist.
上記−数式夏のシリル化ポリオルガノシルセスキオキサ
ンにおいて、Ｒとしてのアルケニル基の例としては、−
Ｃｌ（＝ＣＬ、 （ＨｚＣＨ＝ＣＨｚ、−Ｃ１１＝＝Ｃ
ｌｌＣＨｚ、−Ｃ＝ Ｃ）１２、 ＣＩ ＝ ＣＩＩＣ
ＩＬｚＣＨ：＋、−Ｃ）１．ｃＨ＝ＣＩ。Examples of the alkenyl group as R in the silylated polyorganosilsesquioxane of the above formula are -
Cl(=CL, (HzCH=CHz, -C11==C
llCHHz, -C=C)12, CI=CIIC
ILzCH:+, -C)1. cH=CI.
ＣＩＩＣＩ（３、Ｃｌ１ｚＣ＝ＣＨｚ等がある。CIICI (3, Cl1zC=CHz, etc.).
ＣＩ。C.I.
また、上記−数式■において、Ｒ′はｔ−ブチルである
のが好ましく、−数式■のテトラ（アルキルペルオキシ
カルボニル）ベンゾフェノンとしては、３．３’、４．
４’−テトラ（ｔ−ブチルペルオキシカルボニル）ベン
ゾフェノンがもっとも好ましい。Furthermore, in the above formula (2), R' is preferably t-butyl, and the tetra(alkylperoxycarbonyl)benzophenone in the formula (2) is 3.3', 4.
Most preferred is 4'-tetra(t-butylperoxycarbonyl)benzophenone.
また、本発明に有用な芳香族系溶剤としてはトルエン、
キシレン等があり、ケトン系溶剤としてはメチルイソブ
チルケトン、ジイソブチルケトン等がある。Further, aromatic solvents useful in the present invention include toluene,
Examples include xylene, and ketone solvents include methyl isobutyl ketone and diisobutyl ketone.
本発明に係るレジスト組成物を二層構造レジストの上層
レジスト材料として用いた場合、Ｄｅｅｐ −ＵＶ光（
特に波長２５Ｏｎｍ付近）によるパターン露光により、
−数式Ｈの化合物が光重合開始剤として作用し、これが
Ｄｅｅｐ −ＵＶ光により分解して効率よくラジカルを
発生し、−数式！で示されるラダー型構造を有するシリ
コーンポリマーを架橋せしめる。しかして、このラダー
型シリコーン樹脂は、Ｄｅｅｐ −ＵＶ光露光によりパ
ターニングされた上層パターンを下層に転写するための
プラズマエツチングに際して用いられる酸素プラズマに
対して高い耐性を有する。従って、本発明に係るレジス
ト組成物は、二層構造レジストの上層材料として極めて
有用である。When the resist composition according to the present invention is used as an upper resist material of a two-layer structure resist, deep-UV light (
In particular, by pattern exposure using a wavelength of around 25 Onm,
-The compound of formula H acts as a photopolymerization initiator, which is decomposed by Deep UV light to efficiently generate radicals, -formula! A silicone polymer having a ladder-type structure shown in is crosslinked. Therefore, this ladder-type silicone resin has high resistance to oxygen plasma used in plasma etching for transferring an upper layer pattern patterned by deep-UV light exposure to a lower layer. Therefore, the resist composition according to the present invention is extremely useful as an upper layer material of a two-layer resist.
以下、実施例を挙げて本発明をさらに説明する。 The present invention will be further explained below with reference to Examples.
立炭桝
メチルイソブチルケトン（旧ＢＫ） １００−にピリジ
ン１８ｒｎ１を加え、−６０℃に冷却した。これに、ビ
ニルトリクロルシラン３０ｇを、次いでイオン交換水１
８ｍ１を滴下し、反応溶液を徐々に昇温した。さらに、
窒素ガスでバブリングを行ないながら、１２０℃で５時
間縮重合反応を行った。反応終了後、溶液を５〜６回水
洗し、ＭＩＩＩＫ層を分取した。Pyridine 18rn1 was added to methyl isobutyl ketone (formerly BK) 100- and cooled to -60°C. To this, add 30g of vinyltrichlorosilane, then add 11g of ion-exchanged water.
8 ml was added dropwise, and the temperature of the reaction solution was gradually raised. moreover,
A polycondensation reaction was carried out at 120° C. for 5 hours while bubbling with nitrogen gas. After the reaction was completed, the solution was washed with water 5 to 6 times, and the MIIIK layer was separated.
次に、トリメチルクロルシラン３０ｄとピリジン３０−
を加え、６０℃で２時間加熱を行ない、未反応水酸基を
シリル化した。次に、反応溶液を１０回水洗し、アセト
ニトリル中に投入してシリル化ポリビニルシルセスキオ
キサンを沈殿回収した。得られた樹脂をベンゼン５０−
に溶解し、凍結乾燥を行った。本合成例により得られた
シリル化ポリビニルシルセスキオキサンは、Ｍｗ＝５．
０ＸＩＯ’ 、 Ｍｗ ／Ｍｎ ＝ １．８であった
。Next, trimethylchlorosilane 30d and pyridine 30-
was added and heated at 60°C for 2 hours to silylate unreacted hydroxyl groups. Next, the reaction solution was washed with water 10 times and poured into acetonitrile to precipitate and collect silylated polyvinylsilsesquioxane. The obtained resin was mixed with benzene 50-
and freeze-dried. The silylated polyvinylsilsesquioxane obtained in this synthesis example had an Mw of 5.
0XIO', Mw/Mn = 1.8.
大施炎
合成例で得たシリル化ポリビニルシルセスキオキサン１
ｇをトルエン９ｇに溶解し、３．３’。Silylated polyvinylsilsesquioxane 1 obtained in large flame synthesis example
Dissolve g in 9 g of toluene and make 3.3'.
４．４′−テトラ（ｔ−ブチルペルオキシカルボニル）
ベンゾフェノン０．０５ｇを添加してレジスト溶液を調
製した。4.4'-tetra(t-butylperoxycarbonyl)
A resist solution was prepared by adding 0.05 g of benzophenone.
シリコン基板上に、下層レジストとして肝−１３５０レ
ジスト （シラプレー社製）を膜Ｎ、２ ｐｍとなるよ
うにスピンコードし、２００℃で１時間加熱して硬化さ
せた。この股上に上記レジスト溶液を膜厚０．２μとな
るようにスピンコードし、６０℃で２０分間溶剤乾燥を
行った。On the silicon substrate, a lower layer resist, Liver-1350 resist (manufactured by Silapray), was spin-coded to a film thickness of 2 pm and cured by heating at 200° C. for 1 hour. The above resist solution was spin-coated onto this crotch to a film thickness of 0.2 μm, and solvent-dried at 60° C. for 20 minutes.
この試料に対して、２４８ｎｍのＤｅｅｐ −ＵＶ光を
用いて、ソフトコンタクトによるマスク露光を行った。This sample was subjected to mask exposure using soft contact using 248 nm deep-UV light.
次いで、ＭＩＢＫに３０秒間浸漬して現像し、さらにイ
ソプロピルアルコールにて３０秒間リンス処ＥＩを行っ
た。次に、被処理基板を平行平板型ドライエツチング装
置（日型アネルバ社製）にセットし、酸素プラズマにて
エツチングを行ない、上層パターンを下層に転写した。Next, the film was developed by immersing it in MIBK for 30 seconds, and was further rinsed with isopropyl alcohol for 30 seconds to perform EI. Next, the substrate to be processed was set in a parallel plate type dry etching device (manufactured by Nikkei Anelva Co., Ltd.), and etching was performed using oxygen plasma to transfer the upper layer pattern to the lower layer.
この結果、このレジストの感度は２０ｍＪ／ＣｒＡで、
０．５ｐの！！／Ｓパターンを解像できることが確認さ
れた。As a result, the sensitivity of this resist is 20 mJ/CrA,
0.5p! ! It was confirmed that the /S pattern could be resolved.
本発明に係るレジスト組成物を二層構造レジストの上層
レジスト材料として用い、これをＤｅｅｐ −ＵＶ光で
露光することにより、高い感度をもってサブミクロンの
オーダーの微細パターンを形成することができる。By using the resist composition according to the present invention as an upper layer resist material of a two-layer structure resist and exposing it to deep-UV light, a fine pattern on the order of submicrons can be formed with high sensitivity.
Claims (1)
ケニル基を表し、同一であっても異なっていても良い。 〕 で示されるシリル化ポリオルガノシルセスキオキサンと
下記式II、 ▲数式、化学式、表等があります▼ 〔上式中、Ｒ′は炭素数１〜４の低級アルキル基を表す
〕 で示されるテトラ（アルキルペルオキシカルボニル）ベ
ンゾフェノンとを芳香族系溶剤もしくはケトン系溶剤に
溶解してなるレジスト系組成物。 ２、第１項記載のレジスト組成物を二層構造レジストの
上層レジスト材料として用いることを特徴とするパター
ン形成方法。[Claims] 1. The following formula I, ▲ Numerical formulas, chemical formulas, tables, etc. You can leave it there. ] The silylated polyorganosilsesquioxane represented by the following formula II, ▲There are mathematical formulas, chemical formulas, tables, etc.▼ [In the above formula, R' represents a lower alkyl group having 1 to 4 carbon atoms] A resist composition prepared by dissolving tetra(alkylperoxycarbonyl)benzophenone in an aromatic solvent or a ketone solvent. 2. A pattern forming method, characterized in that the resist composition according to item 1 is used as an upper layer resist material of a two-layer resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2740388A JPH01204043A (en) | 1988-02-10 | 1988-02-10 | Resist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2740388A JPH01204043A (en) | 1988-02-10 | 1988-02-10 | Resist composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01204043A true JPH01204043A (en) | 1989-08-16 |
Family
ID=12220102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2740388A Pending JPH01204043A (en) | 1988-02-10 | 1988-02-10 | Resist composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01204043A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009035676A (en) * | 2007-08-03 | 2009-02-19 | Sekisui Chem Co Ltd | Photocurable composition |
-
1988
- 1988-02-10 JP JP2740388A patent/JPH01204043A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009035676A (en) * | 2007-08-03 | 2009-02-19 | Sekisui Chem Co Ltd | Photocurable composition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH03223860A (en) | Novel resist material | |
| JP3228193B2 (en) | Negative photoresist composition and pattern forming method using the same | |
| JP3824288B2 (en) | Positive photosensitive resin composition | |
| US8394573B2 (en) | Photoresist compositions and methods for shrinking a photoresist critical dimension | |
| JP2861253B2 (en) | Photosensitive resin composition | |
| JP3901342B2 (en) | Positive photosensitive resin composition | |
| US5900346A (en) | Compositions comprising photoactivator, acid, generator and chain extender | |
| CN1099052C (en) | Novel photoresist copolymer | |
| JPS63279245A (en) | Negative resist composition | |
| JP3851440B2 (en) | Positive photosensitive composition | |
| JPH01204043A (en) | Resist composition | |
| JPS62235943A (en) | Manufacture of electronic device utilizing lithography | |
| JP3832790B2 (en) | Positive photosensitive resin composition | |
| JPS63199715A (en) | Copolymer having o-nitrocarbinol ester, double-layer resist using the same and production of semiconductive element | |
| JP3925882B2 (en) | Positive photosensitive resin composition | |
| JPH03223862A (en) | Resist material | |
| JP2606321B2 (en) | Photosensitive heat-resistant resin composition and method for manufacturing semiconductor device | |
| JPS6364772B2 (en) | ||
| JPH01221384A (en) | Silicone compound | |
| JPS61289345A (en) | Resist for lithography | |
| Bousaba et al. | Plasma resistant modified I-line, deep UV, and e-beam resists | |
| JPS62299965A (en) | Negative type resist composition | |
| JPH026512A (en) | Production of photoreactive polymer and resist | |
| JPS62222247A (en) | Positive photoresist material | |
| JPH04289865A (en) | Manufacture for wiring structure |