JPS63110001U - - Google Patents
Info
- Publication number
- JPS63110001U JPS63110001U JP157987U JP157987U JPS63110001U JP S63110001 U JPS63110001 U JP S63110001U JP 157987 U JP157987 U JP 157987U JP 157987 U JP157987 U JP 157987U JP S63110001 U JPS63110001 U JP S63110001U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- aluminum
- tantalum nitride
- utility
- interposed therebetween
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
Description
第１図は本考案の薄膜抵抗素子の一実施例の断
面図、第２図は本考案の薄膜抵抗素子の他の実施
例の断面図である。
１……基板、２……ＳｉＯ２膜、３，１３……
窒化タンタル膜、４，１４……電極膜、１１……
支持体、１２……高耐熱有機絶縁膜。
FIG. 1 is a sectional view of one embodiment of the thin film resistive element of the present invention, and FIG. 2 is a sectional view of another embodiment of the thin film resistive element of the present invention. 1...Substrate, 2...SiO 2 film, 3, 13...
Tantalum nitride film, 4, 14... Electrode film, 11...
Support, 12...High heat-resistant organic insulating film.
Claims (1)
基体上に電気絶縁膜を介して窒化タンタル薄膜抵
抗体が形成されてなる薄膜抵抗素子。 A thin film resistance element in which a tantalum nitride thin film resistor is formed on a substrate made of aluminum or an aluminum alloy with an electrically insulating film interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP157987U JPS63110001U (en) | 1987-01-08 | 1987-01-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP157987U JPS63110001U (en) | 1987-01-08 | 1987-01-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63110001U true JPS63110001U (en) | 1988-07-15 |
Family
ID=30779621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP157987U Pending JPS63110001U (en) | 1987-01-08 | 1987-01-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63110001U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02220491A (en) * | 1988-12-21 | 1990-09-03 | American Teleph & Telegr Co <Att> | Silicon base mounting structure for semiconductor optical device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60106190A (en) * | 1983-11-14 | 1985-06-11 | 三洋電機株式会社 | Hybrid integrated circuit |
-
1987
- 1987-01-08 JP JP157987U patent/JPS63110001U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60106190A (en) * | 1983-11-14 | 1985-06-11 | 三洋電機株式会社 | Hybrid integrated circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02220491A (en) * | 1988-12-21 | 1990-09-03 | American Teleph & Telegr Co <Att> | Silicon base mounting structure for semiconductor optical device |