JPS6310908B2 - - Google Patents
Info
- Publication number
- JPS6310908B2 JPS6310908B2 JP56043002A JP4300281A JPS6310908B2 JP S6310908 B2 JPS6310908 B2 JP S6310908B2 JP 56043002 A JP56043002 A JP 56043002A JP 4300281 A JP4300281 A JP 4300281A JP S6310908 B2 JPS6310908 B2 JP S6310908B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- source
- contact
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000006698 induction Effects 0.000 claims description 17
- 230000003068 static effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 description 19
- 230000003321 amplification Effects 0.000 description 13
- 238000003199 nucleic acid amplification method Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4300281A JPS56153773A (en) | 1981-03-23 | 1981-03-23 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4300281A JPS56153773A (en) | 1981-03-23 | 1981-03-23 | Semiconductor integrated circuit device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16037476A Division JPS5382182A (en) | 1976-12-27 | 1976-12-27 | Fet transistor circuit and semiconductor ic |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56153773A JPS56153773A (en) | 1981-11-27 |
JPS6310908B2 true JPS6310908B2 (fr) | 1988-03-10 |
Family
ID=12651789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4300281A Granted JPS56153773A (en) | 1981-03-23 | 1981-03-23 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56153773A (fr) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5078284A (fr) * | 1973-11-09 | 1975-06-26 | ||
JPS50120780A (fr) * | 1974-03-08 | 1975-09-22 |
-
1981
- 1981-03-23 JP JP4300281A patent/JPS56153773A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5078284A (fr) * | 1973-11-09 | 1975-06-26 | ||
JPS50120780A (fr) * | 1974-03-08 | 1975-09-22 |
Also Published As
Publication number | Publication date |
---|---|
JPS56153773A (en) | 1981-11-27 |
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