JPS63108649U - - Google Patents
Info
- Publication number
- JPS63108649U JPS63108649U JP20326886U JP20326886U JPS63108649U JP S63108649 U JPS63108649 U JP S63108649U JP 20326886 U JP20326886 U JP 20326886U JP 20326886 U JP20326886 U JP 20326886U JP S63108649 U JPS63108649 U JP S63108649U
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- power transistor
- emitter terminal
- transistor module
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 4
Description
第1図は本考案の一実施例の回路構成図、第2
図は本考案の一実施例の概略組立状態図、第3図
はパワートランジスタを示し、同時Aはその平面
図、同時Bはその側面図、第4図は第2図の第1
接続導体の概略構成図を示し、同図Aはその正面
図、同図Bはその平面図、第5図は同じく第2接
続導体の概略構成図を示し、同図Aはその正面図
、同図Bはその平面図、第6図は同じく第3接続
導体の概略構成図を示し、同図Aはその正面図、
同図Bはその平面図である。
1ないし14:パワートランジスタ、15:第
1接続導体、16:第2接続導体、17:第3接
続導体、18:出力端子、19:共通コレクタ端
子、20:共通エミツタ端子、22,28,34
:平面板、23,35:直立板、26,27,3
3:切欠き部、32:孔部、PTr:パワートラ
ンスモジユール。
Figure 1 is a circuit configuration diagram of an embodiment of the present invention;
The figure is a schematic assembly state diagram of one embodiment of the present invention, FIG. 3 shows a power transistor, simultaneous A is its top view, simultaneous B is its side view, and FIG. 4 is the first in FIG. 2.
FIG. 5 shows a schematic configuration diagram of the second connection conductor; FIG. 5A is a front view thereof, FIG. Figure B is a plan view thereof, Figure 6 is a schematic diagram of the third connecting conductor, and Figure A is a front view thereof.
Figure B is a plan view thereof. 1 to 14: power transistor, 15: first connection conductor, 16: second connection conductor, 17: third connection conductor, 18: output terminal, 19: common collector terminal, 20: common emitter terminal, 22, 28, 34
: Plane board, 23, 35: Upright board, 26, 27, 3
3: Notch, 32: Hole, PTr: Power transformer module.
Claims (1)
スイツチング装置として構成されるパワートラン
ジスタモジユールにおいて、前記各トランジスタ
の各エミツタ端子と共通エミツタ端子との間のそ
れぞれのエミツタ電流の通路長さの差をできる限
り小さくする接続導体を備え、前記トランジスタ
間の電流バランスを計ることを特徴とするパワー
トランジスタモジユール。 In a power transistor module configured as a large current switching device by connecting a plurality of transistors in parallel, the difference in path length of each emitter current between each emitter terminal of each transistor and a common emitter terminal is calculated. A power transistor module comprising a connecting conductor that is made as small as possible to measure current balance between the transistors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20326886U JPS63108649U (en) | 1986-12-27 | 1986-12-27 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20326886U JPS63108649U (en) | 1986-12-27 | 1986-12-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63108649U true JPS63108649U (en) | 1988-07-13 |
Family
ID=31168436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20326886U Pending JPS63108649U (en) | 1986-12-27 | 1986-12-27 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63108649U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105406742A (en) * | 2014-09-09 | 2016-03-16 | 富士电机株式会社 | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58131759A (en) * | 1982-01-30 | 1983-08-05 | Matsushita Electric Works Ltd | Structure of parallel connection of transistor for power |
-
1986
- 1986-12-27 JP JP20326886U patent/JPS63108649U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58131759A (en) * | 1982-01-30 | 1983-08-05 | Matsushita Electric Works Ltd | Structure of parallel connection of transistor for power |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105406742A (en) * | 2014-09-09 | 2016-03-16 | 富士电机株式会社 | Semiconductor device |
JP2016058515A (en) * | 2014-09-09 | 2016-04-21 | 富士電機株式会社 | Semiconductor device |
CN105406742B (en) * | 2014-09-09 | 2019-05-10 | 富士电机株式会社 | Semiconductor device |