JPS63108649U - - Google Patents

Info

Publication number
JPS63108649U
JPS63108649U JP20326886U JP20326886U JPS63108649U JP S63108649 U JPS63108649 U JP S63108649U JP 20326886 U JP20326886 U JP 20326886U JP 20326886 U JP20326886 U JP 20326886U JP S63108649 U JPS63108649 U JP S63108649U
Authority
JP
Japan
Prior art keywords
transistors
power transistor
emitter terminal
transistor module
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20326886U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP20326886U priority Critical patent/JPS63108649U/ja
Publication of JPS63108649U publication Critical patent/JPS63108649U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の回路構成図、第2
図は本考案の一実施例の概略組立状態図、第3図
はパワートランジスタを示し、同時Aはその平面
図、同時Bはその側面図、第4図は第2図の第1
接続導体の概略構成図を示し、同図Aはその正面
図、同図Bはその平面図、第5図は同じく第2接
続導体の概略構成図を示し、同図Aはその正面図
、同図Bはその平面図、第6図は同じく第3接続
導体の概略構成図を示し、同図Aはその正面図、
同図Bはその平面図である。 1ないし14:パワートランジスタ、15:第
1接続導体、16:第2接続導体、17:第3接
続導体、18:出力端子、19:共通コレクタ端
子、20:共通エミツタ端子、22,28,34
:平面板、23,35:直立板、26,27,3
3:切欠き部、32:孔部、PTr:パワートラ
ンスモジユール。
Figure 1 is a circuit configuration diagram of an embodiment of the present invention;
The figure is a schematic assembly state diagram of one embodiment of the present invention, FIG. 3 shows a power transistor, simultaneous A is its top view, simultaneous B is its side view, and FIG. 4 is the first in FIG. 2.
FIG. 5 shows a schematic configuration diagram of the second connection conductor; FIG. 5A is a front view thereof, FIG. Figure B is a plan view thereof, Figure 6 is a schematic diagram of the third connecting conductor, and Figure A is a front view thereof.
Figure B is a plan view thereof. 1 to 14: power transistor, 15: first connection conductor, 16: second connection conductor, 17: third connection conductor, 18: output terminal, 19: common collector terminal, 20: common emitter terminal, 22, 28, 34
: Plane board, 23, 35: Upright board, 26, 27, 3
3: Notch, 32: Hole, PTr: Power transformer module.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 複数個のトランジスタを並列に接続して大電流
スイツチング装置として構成されるパワートラン
ジスタモジユールにおいて、前記各トランジスタ
の各エミツタ端子と共通エミツタ端子との間のそ
れぞれのエミツタ電流の通路長さの差をできる限
り小さくする接続導体を備え、前記トランジスタ
間の電流バランスを計ることを特徴とするパワー
トランジスタモジユール。
In a power transistor module configured as a large current switching device by connecting a plurality of transistors in parallel, the difference in path length of each emitter current between each emitter terminal of each transistor and a common emitter terminal is calculated. A power transistor module comprising a connecting conductor that is made as small as possible to measure current balance between the transistors.
JP20326886U 1986-12-27 1986-12-27 Pending JPS63108649U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20326886U JPS63108649U (en) 1986-12-27 1986-12-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20326886U JPS63108649U (en) 1986-12-27 1986-12-27

Publications (1)

Publication Number Publication Date
JPS63108649U true JPS63108649U (en) 1988-07-13

Family

ID=31168436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20326886U Pending JPS63108649U (en) 1986-12-27 1986-12-27

Country Status (1)

Country Link
JP (1) JPS63108649U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105406742A (en) * 2014-09-09 2016-03-16 富士电机株式会社 Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131759A (en) * 1982-01-30 1983-08-05 Matsushita Electric Works Ltd Structure of parallel connection of transistor for power

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131759A (en) * 1982-01-30 1983-08-05 Matsushita Electric Works Ltd Structure of parallel connection of transistor for power

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105406742A (en) * 2014-09-09 2016-03-16 富士电机株式会社 Semiconductor device
JP2016058515A (en) * 2014-09-09 2016-04-21 富士電機株式会社 Semiconductor device
CN105406742B (en) * 2014-09-09 2019-05-10 富士电机株式会社 Semiconductor device

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