JPS63107022A - Measuring device for clearance between mask and wafer - Google Patents
Measuring device for clearance between mask and waferInfo
- Publication number
- JPS63107022A JPS63107022A JP61251608A JP25160886A JPS63107022A JP S63107022 A JPS63107022 A JP S63107022A JP 61251608 A JP61251608 A JP 61251608A JP 25160886 A JP25160886 A JP 25160886A JP S63107022 A JPS63107022 A JP S63107022A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- wafer
- electrode pattern
- electrode
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000012528 membrane Substances 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 description 10
- 238000006073 displacement reaction Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 241000257465 Echinoidea Species 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体集積回路製造用のグロキシミティ蕗光
装置に使用されるマスクとウェハ間の間隙測定装置に係
り、特にマスクとウェハ間の間隙を非接触で極めて高稍
匿に測定するために好適な間隙測定装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a gap measuring device between a mask and a wafer used in a gloximity scanning device for manufacturing semiconductor integrated circuits, and particularly to a device for measuring the gap between a mask and a wafer. The present invention relates to a gap measuring device suitable for non-contact and highly accurate measurement.
この種、マスクとウェハ間の間隙測定装置の従来技術と
しては、例えば特開昭６０−１７５８５５号公報、特開
昭５９−１０７５１５号公報に開示されている技術があ
る。As a conventional technique of this type of gap measuring device between a mask and a wafer, there is a technique disclosed in, for example, Japanese Patent Laid-Open No. 175855/1982 and Japanese Patent Laid-open No. 107515/1982.
前記特開昭６０−１７５８５５号公報に開示されている
従来技術では、マスクに回折格子を設げ、ウニ凸面での
反射と、マスク面での反射回折光の強度分布から、マス
クとウェハ間の間隙測定ならびに設定を行うようにして
いる。In the conventional technique disclosed in the above-mentioned Japanese Patent Application Laid-open No. 60-175855, a diffraction grating is provided on the mask, and the distance between the mask and the wafer is determined from the reflection on the convex surface of the sea urchin and the intensity distribution of the reflected and diffracted light on the mask surface. I am trying to measure the gap and make settings.
一方、前記特開昭５９−１０７５１５号公報に開示され
ている従来技術では、間隙測定の手段として、同公報の
第５図、第４図に示されているように、静電容量形の非
接触変位計をマスクの上部に配置し、ウェハの位ｔ Ｗ
ｗをマスクを通して測定し、マスクの位置Ｗｍをマスク
支持材としての、例えばＳｔ基板を通して測定するよう
にしている。ここで、マスクとウェハ間の間隙ＷＡＸ
Ｗ ＝ ”ｋ−Ｗｌｎとして求められる。On the other hand, in the prior art disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 59-107515, as a means of gap measurement, a capacitance type non-conductor is used as a means of gap measurement, as shown in FIGS. 5 and 4 of the same publication. A contact displacement meter is placed on the top of the mask, and the wafer position t W
w is measured through a mask, and the position Wm of the mask is measured through, for example, an St substrate as a mask support material. Here, the gap WAX between the mask and the wafer
It is determined as W = ``k-Wln.
しかし、前記特開昭６０−１７５８５５号公報に開示さ
れている従来技術には、次のような問題がある。However, the prior art disclosed in Japanese Patent Application Laid-Open No. 175855/1985 has the following problems.
（１）高精度回折格子の製作が困難である。(1) It is difficult to manufacture a high-precision diffraction grating.
（１１）設定間隙を変更するためには、回折格子ピッチ
を変えなげればならず、間隙を変更することが困難であ
る。(11) In order to change the set gap, the diffraction grating pitch must be changed, making it difficult to change the gap.
（＋＋；）回折格子による干渉信号のピークを求める方
式であるため、測定に長時間を要する。(++;) Since this method uses a diffraction grating to find the peak of the interference signal, it takes a long time to measure.
また、前記特開昭５９−１０７５１５号公報に開示され
ている従来技術には、次のような問題がある。Furthermore, the prior art disclosed in Japanese Patent Application Laid-Open No. 59-107515 has the following problems.
＋１１ ウェハの位置〜をマスクを通して測定するた
め、マスクの材質、厚みむら等により誤差かを工いる。+11 Since the position of the wafer is measured through a mask, errors are considered due to the material of the mask, uneven thickness, etc.
周知のように、非接触変位計は、静電容量がＱｘｇ Ｓ
で表現される。そして、ギャップｄの量子
は防電率８の物体が均一に満たされ℃〜）ることを前提
として靜電容ｉｉＣを測定し、この静電容−ｊｌＣかも
逆にギャップｄを求めるものである。As is well known, a non-contact displacement meter has a capacitance of Qxg S
It is expressed as Then, on the premise that the quantum of the gap d is uniformly filled in an object with a dielectric resistivity of 8°C, the electrostatic capacitance iiC is measured, and the gap d is determined from this capacitance -jlC.
ところが、マスクの付置の誘を率と空気の防電率とは異
なるし、マスクの厚みむらか誤差となることは明らかで
ある。However, the permittivity of the mask when it is attached is different from the electrical resistivity of air, and it is clear that the difference is due to unevenness in the thickness of the mask.
さらに、通常、Ｘ線露光用のマスクは表面保護のため、
ＰｉＱ等の複数材料のコーティングが施されているので
、このコーティングの材料むら、厚みむらが測定誤差と
なる。Furthermore, masks for X-ray exposure are usually used to protect the surface.
Since a coating of multiple materials such as PiQ is applied, unevenness in the material and thickness of this coating causes measurement errors.
つまり、マスクの上面からフェノ−の位置Ｗｗｋ測定し
ようとするところに誤差が＆ハ１り込む要因がある。In other words, there is a factor in which an error is introduced when trying to measure the position Wwk of the phenol from the top surface of the mask.
（２）マスクの位置Ｗｍの測定についても、前記（１）
と同様の問題がある。(2) Regarding the measurement of the mask position Wm, see (1) above.
There is a similar problem.
＋３１ マスクとウニ／＼の位置をそれぞれ別々に測
定して、これらの差を、求めるべき間隙として（・るた
め、間隙を直接測定する方式に比較して測定誤差が大き
くなる。+31 The positions of the mask and the sea urchin/\\ are each measured separately, and the difference between them is used as the gap to be determined, so the measurement error becomes larger compared to a method that directly measures the gap.
本発明の目的は、前記従来技術の問題を解決し、マスク
とウェハ間の間隙を非接触で高精度に、しかも短時間で
測定し得るマスクとシェフ１間の間隙測定装置を提供す
ることにある。An object of the present invention is to provide a gap measuring device between a mask and a chef 1 that can solve the problems of the prior art and measure the gap between a mask and a wafer in a non-contact manner with high precision and in a short time. be.
上記目的は、マスクのフェノＳＫ対向する面側と、ウェ
ハのマスクに対向する面側とのいずれか一方に、電極パ
ターンを作成し、鉄電極ノ（ターンを含む静電容量形位
置センナを備えていることにより、達成される。The above purpose is to create an electrode pattern on either the side of the mask that faces the phenol SK or the side of the wafer that faces the mask, and to equip it with a capacitive position sensor including iron electrodes (turns). This is achieved by
本発明でに、マスクのフェノ１に対向する面側と、ウェ
ハのマスクに対向する面側とのいずれかに電極パターン
が作成されている。また、マスクにはＡｕ等の導電性材
料でマスクパターンが作成され、ウェハはＳｉ＃の導電
性材料で形成されて〜・る。In the present invention, an electrode pattern is formed on either the side of the mask facing the phenol 1 or the side of the wafer facing the mask. Further, a mask pattern is formed on the mask using a conductive material such as Au, and the wafer is formed using a conductive material such as Si#.
さらに、プロキシミティ露光装置ではマスクとウェハと
を微小の間隙ｄをおいて配置される。Furthermore, in the proximity exposure apparatus, the mask and the wafer are placed with a small gap d between them.
したがって、電極パターンの面積を８とずれくこの電極
パターンを一方の電極とし、Ｖスフとウェハのいずれか
を他方の電極とし、電極面積をＳとし、電極間の間隙な
ｄとする平行平板電極を持りたコンデンサが形成される
。Therefore, the area of the electrode pattern is shifted to 8, this electrode pattern is used as one electrode, either the V spacer or the wafer is used as the other electrode, the electrode area is S, and the gap between the electrodes is d. A capacitor with .
このコンデンサの静電容量Ｃは、次式で表現される。The capacitance C of this capacitor is expressed by the following equation.
ただし、８：防電率である。However, 8: electrical resistance.
この（１）式から静電容量Ｃは間隙ｄに反比例すること
が分かり、前記静電容′ｊｊｋＣの変化を検出すること
によって間隙ｄの変位量を知ることが可能である。From this equation (1), it can be seen that the capacitance C is inversely proportional to the gap d, and by detecting the change in the capacitance 'jjkC, it is possible to know the amount of displacement of the gap d.
そこで、本発明では前記静電容ｉＣを電極パターンを通
じて１！を気的に、直接測定し、計算機により前記静電
容量Ｃの測定結果からマスクとウェハ閣の間隙ｄを計算
するようにしている。Therefore, in the present invention, the capacitance iC is increased to 1! through the electrode pattern. The capacitance C is measured directly, and the gap d between the mask and the wafer is calculated using a computer from the measurement result of the capacitance C.
したがって、本発明でを工前記マスクとウニノ為間の間
隙ｄを非接触で、かつ極めて高精度で、しかも短時間に
測定することが可能である。Therefore, according to the present invention, it is possible to measure the gap d between the mask and the sea urchin without contact, with extremely high precision, and in a short time.
以下、本発明の実施例を図面により説明する。 Embodiments of the present invention will be described below with reference to the drawings.
Ｍ１図は本発明の一実施例の要部の詳細を示す縦断面図
、第２図は第１図の・Ｌ−ＩＩ矢視図、稟５図は本発明
を適用するプロキシミティＡ元装置の。Figure M1 is a vertical cross-sectional view showing details of the main parts of an embodiment of the present invention, Figure 2 is a view taken along the line L-II in Figure 1, and Figure 5 is a proximity A source device to which the present invention is applied. of.
概念図である。It is a conceptual diagram.
本発明を適用するプロキシミティ露光装置の第６図に示
す実施例のものは、真空チャンバ１と、これの内部に設
置された電子銃２と、ターゲット４と、マスク支持体７
およびマスクホルダ８（第１図参照）と、ウェハステー
ジ９と、マスクとウェハの位置調節手段（図示せず）と
を備えて構成されている。The embodiment of the proximity exposure apparatus to which the present invention is applied, shown in FIG.
It also includes a mask holder 8 (see FIG. 1), a wafer stage 9, and mask and wafer position adjustment means (not shown).
前記マスク支持体７は、８１等により形成され、マスク
１０を支持している。The mask support 7 is formed of 81 or the like and supports the mask 10.
前記マスクホルダ８は、前記マスク支持体７を真空吸引
し、保持するようになっている。The mask holder 8 is configured to vacuum the mask support 7 and hold it.
したがって、前記マスク１０はマスク支持体７を介して
マスクホルダ８に保持されている。Therefore, the mask 10 is held by the mask holder 8 via the mask support 7.
前記ウェハステージ９にを工、マスク７に対向させてウ
ェハ１５が載置されている。A wafer 15 is placed on the wafer stage 9 so as to face the mask 7 .
前記真空チャンバ１は、例えば１０ ｔｏｒｒ以下の
高真空雰囲気に保持されている。The vacuum chamber 1 is maintained in a high vacuum atmosphere of, for example, 10 torr or less.
前記電子銃２は、加速した電子ビーム５をターゲツト４
０ポイントＸ？ＩＭソース５に向かって照射するように
なっている。The electron gun 2 directs the accelerated electron beam 5 to a target 4.
0 points X? It is designed to irradiate towards the IM source 5.
前記ターゲット４は、その材質に応じて、ポイントＸ線
ソース５からマスク１０に向かって放射状に露光Ｘ線６
を照射するようになっている。The target 4 receives exposure X-rays 6 radially from a point X-ray source 5 toward a mask 10 depending on its material.
It is designed to irradiate.
前記マスク１０は、第１図に示すように、メンブレン１
１にマスクパターン１２を作成して構成されている。前
記メンブレン１１は、ＢＮ、Ｓｉ、Ｎ、等、Ｘ線の透過
性のよい材料で形成されている。前記マスクパターン１
２＆工、Ａｕ等のごと＜、Ｘ線の吸収性のよい材料を用
いて、前記メンブレン１１に微細に作成されている。The mask 10 has a membrane 1 as shown in FIG.
1, a mask pattern 12 is created. The membrane 11 is made of a material with good X-ray transparency, such as BN, Si, and N. The mask pattern 1
The membrane 11 is finely formed using a material with good X-ray absorption properties, such as Au, etc.
前記ウェハ１５は、Ｓｉ等の５ｉａｃ性材料で形成され
ている。また、ウェハ１５は前記ウェハステージ９上に
載置され、マスク１０との間に微小の間隙ｄをおいて配
置されている。The wafer 15 is made of a 5iac material such as Si. Further, the wafer 15 is placed on the wafer stage 9 and placed with a small gap d between it and the mask 10.
前記位ｆｉｗ４節手段は、マスクホルダ８とウェハステ
ージ９とを三次元方向に相対的に変位させ、マスク１０
とウェハ１５とを三次元方向に位置合わせし得るように
構成されている。The fiw4 section means relatively displaces the mask holder 8 and the wafer stage 9 in a three-dimensional direction, and
and the wafer 15 can be aligned three-dimensionally.
そして、前記マスク１０に４元Ｘ？／Ｍ６が照射される
に伴い、ウェハ１５の表面にマスクパターン１２が転写
されるようになっている。And 4 yuan X in the mask 10? As /M6 is irradiated, the mask pattern 12 is transferred onto the surface of the wafer 15.
ところで、マスク１０とウェハ１５の間ｖｉｄが変化す
ると、第５図から分かるように、露光Ｘ線６が放射状で
あることから、転写エラーが生じる。By the way, if the vid changes between the mask 10 and the wafer 15, a transfer error will occur because the exposure X-rays 6 are radial, as can be seen from FIG.
したがって、マスク１０とウェハ１３間の間隙ｄを高精
度で測定し、設定された間隙に厳密に設定する必要があ
る。Therefore, it is necessary to measure the gap d between the mask 10 and the wafer 13 with high precision and set it strictly to the set gap.
マスク１０とウェハ１３間の間隙測定装置の第１図、第
２図に示す実施例のものは、マスク１０側に作成された
電極パターン１４と、この電極パターン１４から電流を
取り出す電極１６と、検出された静電容ｆｃから間隙ｄ
を計算する計算機１９とを備えて構成されており、この
実施例ではさらに計算機１９に接続された制御器２０を
膏している。The embodiment of the gap measuring device between the mask 10 and the wafer 13 shown in FIGS. 1 and 2 includes an electrode pattern 14 created on the mask 10 side, an electrode 16 for extracting current from the electrode pattern 14, From the detected capacitance fc to the gap d
In this embodiment, a controller 20 is further connected to the computer 19.
前記を極パターン１４（工、第１図、第２図に示すよう
に、マスク１０のメンブレン１１におけるウェハ１５に
対向する面内で、かつパターン描画部１２Ｉから外れた
余白部分に、円周方向に１２０’の間隔をおいて作成さ
れている。また、前記電極パターン１４は、マスクパタ
ーン１２に前述のとと＜、ｘｉの吸−双性の良好なＡｕ
等が用いられることから、同じＡｕ等の材料を用い、マ
スクパターン１２の作成時に、めっき、エツチング等に
より同時に作成するものとする。前記電極パターン１４
には、第１図、第２図から分かるように、マスク１０の
ウェハ１５に対向する面側から反対側、つまりマスク１
０の上面側にリード１５が付設されている。As shown in FIGS. 1 and 2, the polar pattern 14 (as shown in FIGS. The electrode pattern 14 is formed with the mask pattern 12 made of Au having good absorption duality of <, xi.
Since the mask pattern 12 is made of the same material such as Au, the mask pattern 12 is made by plating, etching, etc. at the same time. The electrode pattern 14
As can be seen from FIGS. 1 and 2, from the side of the mask 10 facing the wafer 15 to the opposite side, that is, the mask 1
Leads 15 are attached to the upper surface side of 0.
前記電極１６は、第１図に示すように、円周方向に１２
００の間隔をおいて作成された前記５個の電極パターン
１４に対応させて設置されている。各電極１６＆＼１！
他ホルダ１７に保持され、かつ圧縮ばね１８罠より前記
電極パターン１４のリード１５に適正な痰触圧で接触可
能に設けられている。As shown in FIG. 1, the electrode 16 has 12
They are installed in correspondence with the five electrode patterns 14 created at intervals of 0.00. Each electrode 16&\1!
It is held by another holder 17 and is provided so as to be able to come into contact with the lead 15 of the electrode pattern 14 by a compression spring 18 trap with an appropriate sputum contact pressure.
前記計算機１９は、各電極１６から４流ｔ、つまり靜電
容ｔｈｔＣを入力し、前記ｉｌ１式からマスク１０とウ
ェハ１５間の間ｆｉｄを計算するようになっている。The calculator 19 inputs the four currents t, that is, the static capacitance thtC from each electrode 16, and calculates the distance fid between the mask 10 and the wafer 15 from the il1 equation.
さらに、この計算機１９は前記５個の電極パターン１４
の位置に８げるマスク１０とウェハ１３間の間ｌｉｄを
計算した後、その計算結果を制御器２０に出力するよう
に酵成さｎでいる。Furthermore, this calculator 19 calculates the five electrode patterns 14.
After calculating the distance between the mask 10 and the wafer 13 at the position 8, the calculation result is outputted to the controller 20.
前記制御器２０＆丸前記計算機１９から５個の電極パタ
ーン１４の位置におけるマスク１０とウェハ１５間の間
隙ｄを入力し、各位置の間ｌｉｄに基づいて、マスク１
０とウェハ１５の三次元方向の位置を調節する前記位置
調節手段に指令を出力するようになっている。The gap d between the mask 10 and the wafer 15 at the positions of the five electrode patterns 14 is input from the controller 20 & the calculator 19, and the gap d between the mask 10 and the wafer 15 is inputted based on the lid between each position.
A command is output to the position adjustment means for adjusting the three-dimensional positions of the wafer 15 and the wafer 15.
前記実施例の間隙測定装置は、次のように作用する。The gap measuring device of the above embodiment operates as follows.
いま、マスク１０とウェハ１３とを間隙ｄをおいて配置
し、マスク１０のウェハ１３に対向する面側に作成され
た各電極パターン１４０面積をＳとすると、各電極パタ
ーン１４を一方の電極とし、導電性材料で作られたウェ
ハ１５を他方の電極とする面積がＳで間隙がｄの平行平
板状の電極を持ったコンデンサが形成される。Now, if the mask 10 and the wafer 13 are arranged with a gap d between them, and the area of each electrode pattern 140 created on the side of the mask 10 facing the wafer 13 is S, each electrode pattern 14 is used as one electrode. , a capacitor having parallel plate-like electrodes with an area S and a gap d is formed, with the wafer 15 made of a conductive material serving as the other electrode.
したがって、前記（１）式から静電容量Ｃは間隙ｄに反
比例することが分かり、また静電容量Ｃの変化から間隙
ｄの変位量が分かることになる。Therefore, from equation (1) above, it can be seen that the capacitance C is inversely proportional to the gap d, and the amount of displacement of the gap d can be determined from the change in the capacitance C.
そこで、マスク１０のウェハ１５に対向する面側に、円
周方向に１２００の間隔をおいて作成された５個の・・
電極パターン１４を通じて当該位置の静電容量Ｃを測定
し、その測定結果を電極１６を通じて計算機１７に出力
する。Therefore, on the side of the mask 10 facing the wafer 15, five...
The capacitance C at the position is measured through the electrode pattern 14, and the measurement result is output to the computer 17 through the electrode 16.
前記計算機１９乃工、５個の電極パターン１４から入力
した靜寛容′ｊｊｋＣと前記（１）式から各電極パター
ン１４の位置におけるマスク１０とウェハ１５間の間ば
ｄをそれぞれ計算する。The computer 19 calculates the distance d between the mask 10 and the wafer 15 at the position of each electrode pattern 14 from the quiet tolerance 'jjjkC input from the five electrode patterns 14 and the equation (1).
前述のごとく、この実施例では電極パターン１４を、マ
スク１０におけるウェハ１５に対向する面側に作成して
いるので、マスク１０とウェハ１５間の間隙ｄｆｊｔ直
接測定することができる。また、この実施例では電極パ
ターン１４を、円周方向に１２００の間隔をおいて５側
設げているので、マスク１０とウェハ１５間の三次元方
向の位置ずれをも検出することができる。As described above, in this embodiment, the electrode pattern 14 is formed on the side of the mask 10 facing the wafer 15, so that the gap dfjt between the mask 10 and the wafer 15 can be directly measured. Further, in this embodiment, since the electrode patterns 14 are provided on five sides at intervals of 1200 mm in the circumferential direction, it is also possible to detect a three-dimensional positional deviation between the mask 10 and the wafer 15.
前記計算機１９は、マスク１０とウェハ１５間の間隙ｄ
に関する計算結果を制御器２０に出力する。The calculator 19 calculates the gap d between the mask 10 and the wafer 15.
The calculation results regarding the above are output to the controller 20.
前記制御器２０で工、計算機１９から５個の電極パター
ン１４の位置の、マスク１０とウェハ１５間の間隙ｄの
計算結果を入力し、マスク１０とウェハ１５間の間隙ｄ
を設定間隙にすべく、またマスク１０とウェハ１Ｓ間の
位置ずれを修正すべく、位置調節手段（図示せず）Ｋ指
令を出力する。The controller 20 inputs the calculation result of the gap d between the mask 10 and the wafer 15 at the positions of the five electrode patterns 14 from the computer 19, and calculates the gap d between the mask 10 and the wafer 15.
A position adjusting means (not shown) outputs a K command in order to set the gap to the set gap and to correct the positional deviation between the mask 10 and the wafer 1S.
前記位置調節手段では、前記制御器２０からの指令に基
づいてマスクホルダ８とウェハステージ９とを三次元方
向に相対的に変位させ、マスク１０とウェハ１５とを位
置合わせする。The position adjusting means relatively displaces the mask holder 8 and the wafer stage 9 in a three-dimensional direction based on a command from the controller 20, thereby aligning the mask 10 and the wafer 15.
したがって、この実施例ではマスク１０とウェハ１３間
の間隙ｄの測定と、その測定結果に基づくマスク１０と
ウェハ１５の三次元方向の位置合わせとを連続して自動
的に行うことができる。Therefore, in this embodiment, the measurement of the gap d between the mask 10 and the wafer 13 and the three-dimensional positioning of the mask 10 and the wafer 15 based on the measurement results can be continuously and automatically performed.
また、この実施例では電極パターン１４をマスクパター
ン１２と同じ材料を用°いて同じ製造プロセスで作成す
ることが可能である。Further, in this embodiment, it is possible to create the electrode pattern 14 using the same material and the same manufacturing process as the mask pattern 12.
次に、第４図は本発明の他の実施例の要部の詳細を示す
縦断面図、第５図は第４図のｖ−■矢視図である。Next, FIG. 4 is a vertical cross-sectional view showing details of essential parts of another embodiment of the present invention, and FIG. 5 is a view taken along the line v-■ in FIG. 4.
これらの図に示す実施例の間隙測定装置では、マスク１
０のメンブレン１１におけるウェハ１５に対向する面側
に、第１．第２０′−極２１．２２が作成されている。In the gap measuring device of the embodiment shown in these figures, the mask 1
On the side of the membrane 11 of No. 0 facing the wafer 15, the first. The 20th-pole 21.22 has been created.
前記第１．第２の電極２１．２２に！、マスクパターン
のパターン描画部１２′の外側の余白部分に、マスクパ
ターンと同じ材料により、マスク１０と同心円のリング
状に作成されている。また、第１．第２の電極２１．２
２間には、リング状の空隙２５が形成されている。そし
て、前記第１．第２の電極２１゜２２により、静電容量
形位置センサが開成されている。Said 1st. To the second electrode 21.22! , a ring shape concentric with the mask 10 is made of the same material as the mask pattern in the outer margin of the pattern drawing section 12' of the mask pattern. Also, 1st. Second electrode 21.2
A ring-shaped gap 25 is formed between the two. And the above-mentioned 1. A capacitive position sensor is formed by the second electrodes 21 and 22.
また、マスク１０のメンブレン１１と、マスク支持体７
には、第１．第２の電極２１．２２に向かり″Ｃ貫通す
るスルーホール２４が設けられており、このスルーホー
ル２４を通じてマスクホルダ８に電流量な取り出し、計
算機（第４図、第５図で會工省略）に対して出力するよ
うになっている。In addition, the membrane 11 of the mask 10 and the mask support 7
There are 1. A through hole 24 passing through the second electrode 21, 22 is provided, and the amount of current is taken out to the mask holder 8 through this through hole 24. ).
この実施例では、前記第１の電＆２１と第２の電極２２
の間でコンデンサが形成され、第１．第２の電極２１
、２２間に電界２５が形成され、これがウェハ１５によ
り乱される。In this embodiment, the first electrode &21 and the second electrode 22
A capacitor is formed between the first . Second electrode 21
, 22, and this is disturbed by the wafer 15.
したがって、第１ 、第２の電極２１．２２間の靜心゛
容量Ｃの変化を検出することにより、マスク１０とウェ
ハ１５間の間隙ｄの変位量を知ることが可能となる。Therefore, by detecting the change in the core capacitance C between the first and second electrodes 21 and 22, it is possible to know the amount of displacement of the gap d between the mask 10 and the wafer 15.
なお、この第４図および第５図に示す実施例の他の構成
１作用については、前記第１図〜第５図に示す実施例と
同様である。The other functions of the structure 1 of the embodiment shown in FIGS. 4 and 5 are the same as those of the embodiment shown in FIGS. 1 to 5.
また、本発明では電極パターンをウェハ１５におけるマ
スク１０に対向する面側に組み込んでも同様に機能する
。Furthermore, the present invention functions similarly even if the electrode pattern is incorporated on the side of the wafer 15 that faces the mask 10.
以上説明した本発明によれば、マスクのウェハに対向す
る面側と、ウェハのマスクに対向する面側とのいずれか
一方罠、電極パターンを作成し、該電極パターンを含む
静電容量形位置センナを備えており、マスクとウェハ間
の間隙を非接触で、かつ電気的に直接検出できるので、
１００−μｍオーダの極めて高精度で測定し得る効果が
あり、短時間。According to the present invention as described above, a trap or electrode pattern is created on either the side of the mask facing the wafer or the side of the wafer facing the mask, and the capacitance type position including the electrode pattern is created. Equipped with sensor, the gap between the mask and wafer can be directly detected non-contact and electrically.
It has the effect of being able to measure with extremely high precision on the order of 100-μm, and in a short time.
に測定し得る効果もある。There are also measurable effects.
第１図＆工本発明の一実施例の要部の詳細を示す縦断面
図、第２図は８ｇ１図の■−■矢視図、第５図は本発明
を適用するプロキシミティ露光装置の概念図、第４図は
本発明の他の実施例の要部の詳細を示す縦断面図、第５
図は第４図のＶ−■矢視図である。
１０・・・マスク
１５・・・ウェハ
ｄ・・・マスクとウェハ間の間隙
１４・・・電極パターン
１６・・・電極
１９・・・計算機
２０・・・制御器
２１．２２・・・第１．第２の電極
２５・・・電界
□Fig. 1 & Fig. 2 is a vertical cross-sectional view showing details of essential parts of an embodiment of the present invention, Fig. 2 is a view taken along the ■-■ arrows in Fig. 8g1, and Fig. 5 is a concept of a proximity exposure apparatus to which the present invention is applied. FIG. 4 is a vertical cross-sectional view showing details of main parts of another embodiment of the present invention, and FIG.
The figure is a view taken along arrow V-■ in FIG. 4. 10...Mask 15...Wafer d...Gap between mask and wafer 14...Electrode pattern 16...Electrode 19...Computer 20...Controller 21.22...First ．． Second electrode 25... electric field □
Claims (1)
に対向する面側とのいずれか一方に、電極パターンを作
成し、該電極パターンを含む静電容量形位置センサを備
えていることを特徴とするマスクとウェハ間の間隙測定
装置。 ２ 特許請求の範囲第１項において、前記電極パターン
をマスクに設けるとともに、該電極パターンをマスクパ
ターンと同じ材料で同時に形成したことを特徴とするマ
スクとウェハ間の間隙測定装置。[Claims] 1. An electrode pattern is created on either the side of the mask facing the wafer or the side of the wafer facing the mask, and a capacitive position sensor including the electrode pattern is provided. A gap measuring device between a mask and a wafer, characterized by comprising: 2. The gap measuring device between a mask and a wafer according to claim 1, wherein the electrode pattern is provided on a mask, and the electrode pattern is simultaneously formed of the same material as the mask pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61251608A JPS63107022A (en) | 1986-10-24 | 1986-10-24 | Measuring device for clearance between mask and wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61251608A JPS63107022A (en) | 1986-10-24 | 1986-10-24 | Measuring device for clearance between mask and wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63107022A true JPS63107022A (en) | 1988-05-12 |
Family
ID=17225347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61251608A Pending JPS63107022A (en) | 1986-10-24 | 1986-10-24 | Measuring device for clearance between mask and wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63107022A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000283702A (en) * | 1999-03-31 | 2000-10-13 | Fotonikusu:Kk | Distance sensor and distance measuring device |
| JP2000304504A (en) * | 1999-04-19 | 2000-11-02 | Fotonikusu:Kk | Thickness sensor and thickness measuring device |
| JP2006511801A (en) * | 2002-12-23 | 2006-04-06 | ラム リサーチ コーポレーション | Method and apparatus for measurement process control using complementary sensors |
| JP2009021393A (en) * | 2007-07-12 | 2009-01-29 | Toyota Motor Corp | Beam irradiating method and beam irradiating device |
| JP2010045317A (en) * | 2008-08-18 | 2010-02-25 | Toppan Printing Co Ltd | Reflective photomask, holding device, exposure device, and exposure method |
| WO2012036911A1 (en) * | 2010-09-14 | 2012-03-22 | Varian Semiconductor Equipment Associates, Inc. | Mechanism and method for alignment of a workpiece to a mask |
| JP2022511288A (en) * | 2018-09-04 | 2022-01-31 | アプライド マテリアルズ インコーポレイテッド | Long-range capacitive gap measurement in wafer morphology sensor system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52108776A (en) * | 1976-03-09 | 1977-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Pattern sticking device |
-
1986
- 1986-10-24 JP JP61251608A patent/JPS63107022A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52108776A (en) * | 1976-03-09 | 1977-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Pattern sticking device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000283702A (en) * | 1999-03-31 | 2000-10-13 | Fotonikusu:Kk | Distance sensor and distance measuring device |
| JP2000304504A (en) * | 1999-04-19 | 2000-11-02 | Fotonikusu:Kk | Thickness sensor and thickness measuring device |
| JP2006511801A (en) * | 2002-12-23 | 2006-04-06 | ラム リサーチ コーポレーション | Method and apparatus for measurement process control using complementary sensors |
| JP2009021393A (en) * | 2007-07-12 | 2009-01-29 | Toyota Motor Corp | Beam irradiating method and beam irradiating device |
| JP2010045317A (en) * | 2008-08-18 | 2010-02-25 | Toppan Printing Co Ltd | Reflective photomask, holding device, exposure device, and exposure method |
| WO2012036911A1 (en) * | 2010-09-14 | 2012-03-22 | Varian Semiconductor Equipment Associates, Inc. | Mechanism and method for alignment of a workpiece to a mask |
| JP2022511288A (en) * | 2018-09-04 | 2022-01-31 | アプライド マテリアルズ インコーポレイテッド | Long-range capacitive gap measurement in wafer morphology sensor system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI276778B (en) | Film-thickness measuring method and apparatus | |
| US6159644A (en) | Method of fabricating semiconductor circuit devices utilizing multiple exposures | |
| US3808527A (en) | Alignment determining system | |
| KR101577717B1 (en) | Capacitive sensing system | |
| CN101772733A (en) | Alignment system and method for a substrate in a nano-imprint process | |
| JPH0321901B2 (en) | ||
| CN103631098A (en) | Photo-etching machine and non-contact type leveling and focusing system and method thereof | |
| CN112201645A (en) | Overlay mark, overlay error measuring method of wafer and stacking method of wafer | |
| JPS63107022A (en) | Measuring device for clearance between mask and wafer | |
| JP6502504B2 (en) | Pre-alignment measurement apparatus and method | |
| US9941177B2 (en) | Pattern accuracy detecting apparatus and processing system | |
| US4397078A (en) | Method and apparatus for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits | |
| JP3814384B2 (en) | Surface position detection method and surface position detection apparatus | |
| JPH0319395A (en) | Pattern forming method and device for thick film thin film hybrid multilayer wiring board | |
| JP2000252204A (en) | Reference mark structure and its manufacture, and charged particle beam exposure system using the same | |
| US6287876B1 (en) | Reticle-substrate alignment methods for charged-particle-beam microlithography, and associated semiconductor-device manufacturing methods | |
| JP2518301B2 (en) | Interval measuring device | |
| JPS5958380A (en) | Method for measuring beam diameter and current density of charged particle ray | |
| JPH01293518A (en) | Aligner having device for detecting variation of height of substrate | |
| JP2587614B2 (en) | Semiconductor device | |
| JP4007597B2 (en) | Capacitance sensor type measuring device | |
| WO1994022028A1 (en) | Method and apparatus for lithographic artifact determination | |
| JPH01285802A (en) | Measuring device of gap between x-ray mask and substrate to be exposed and gap measuring method | |
| JPH0562683B2 (en) | ||
| JPS62273724A (en) | Vernier pattern for evaluating mask alignment accuracy |