JPS631025A - Manufacture of semiconductor superlattice - Google Patents
Manufacture of semiconductor superlatticeInfo
- Publication number
- JPS631025A JPS631025A JP14453586A JP14453586A JPS631025A JP S631025 A JPS631025 A JP S631025A JP 14453586 A JP14453586 A JP 14453586A JP 14453586 A JP14453586 A JP 14453586A JP S631025 A JPS631025 A JP S631025A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- superlattice
- thin film
- excimer laser
- semiconductor superlattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003362 semiconductor superlattice Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 230000005284 excitation Effects 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000002994 raw material Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 101100515517 Arabidopsis thaliana XI-I gene Proteins 0.000 description 1
- 102000007370 Ataxin2 Human genes 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 101150102670 atx-2 gene Proteins 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 不発明は半導体超格子の製造方法に関する。[Detailed description of the invention] [Industrial application field] The invention relates to a method of manufacturing a semiconductor superlattice.
半４′体超格子は、物理的性質（例えば禁、５］ｊ帝雇
や格子定ａなど〕の相異なる二種類以上の半導体超薄膜
を積層したもので、バルク半導体にはない光学的、電気
的に全く新しい特性をもったものである。半導体超格子
を構成するそれぞれの半導体超薄膜の膜厚は通常数百オ
ンゲスドーム以下である。このような極薄の膜厚を持っ
た半導体超格子の製造技術には原子層レベルでの膜厚制
ｄ性が要求される。従来の半導体超格子の製造方法には
、”半導体超格子の物理と応用″（日本物理学会編：培
風館）に紹介されているように、有機金属気相成長法（
Ｍｏｃｖｎ法とも言う）や分子線エピタキシャル法（Ｍ
Ｂｆｆｉ法とも言う）などがある。A semi-4' superlattice is a stack of two or more types of ultra-thin semiconductor films with different physical properties (e.g., 5) dilatation, lattice constant, etc.), and has optical properties not found in bulk semiconductors. It has completely new electrical properties.The thickness of each ultra-thin semiconductor film that makes up a semiconductor superlattice is usually less than a few hundred Angus domes.A semiconductor superlattice with such an ultra-thin film thickness The manufacturing technology requires film thickness control at the atomic layer level.The conventional manufacturing method of semiconductor superlattices is introduced in "Physics and Applications of Semiconductor Superlattices" (edited by the Physical Society of Japan, Baifukan). Metal-organic vapor phase epitaxy (
(also called Mocvn method) and molecular beam epitaxial method (M
(also called the Bffi method).
ＭＯＣＶＤ法は、半導体を構成する元素のアルキル化合
物あるいは水素化物を原料として用い、これらのガス原
料を気相にて半導体基板辰面に導入し、熱分解Ｖζよっ
て反応偵を埋積きせエピタキシャル成長させる技術であ
り、超格子の製造はガス原料を切り換えて行なっていた
。ＭＢＬ法は半導体を構成する元素の単体を高真空中で
加熱し、半導体基板上ＶＣ蒸涜してエピタキシャル成長
させる技術である。ＭＢＥ法による超格子の製造はシャ
ッターの開閉で行なっていた。The MOCVD method is a technology that uses alkyl compounds or hydrides of elements that make up semiconductors as raw materials, introduces these gaseous raw materials in a gas phase onto the top surface of a semiconductor substrate, and embeds reactants through thermal decomposition Vζ to produce epitaxial growth. The superlattice was manufactured by changing the gas source. The MBL method is a technology in which a single element constituting a semiconductor is heated in a high vacuum, and VC is ablated onto the semiconductor substrate to cause epitaxial growth. Superlattice manufacturing using the MBE method was performed by opening and closing a shutter.
〔発明が解決しようとする間１点〕
しかし、前述の従来技術のうちＭＯＯＶＤ法については
、超格子を構成する超薄膜どおしの界面の急峻性は、ガ
ス原料の切フ換えで決定されるが、ＭＯＣＶＤ装置の反
応管内に対流があったり、数棟類のガス切換時にガス切
換えマニホールドに時間遅れがあるなどして界面の急峻
性が悪くなるという問題点があった。ＭＢＥ法Ｖζつい
ては、ＭＢＩＣ装置自体が高価格でランニングコストが
かかることから量産性が悪いという欠点や、成長した薄
膜中にクラスターが形成され、そのクラスターの大きざ
で超格子の膜厚寸法が制限されてしまうといった間、編
点があった。[One point while the invention attempts to solve the problem] However, in the MOOVD method among the conventional techniques mentioned above, the steepness of the interface between the ultra-thin films constituting the superlattice is determined by switching the gas source. However, there were problems in that the steepness of the interface deteriorated due to convection in the reaction tube of the MOCVD device and a time delay in the gas switching manifold when switching gases between several buildings. Regarding the MBE method Vζ, the drawback is that the MBIC device itself is expensive and has high running costs, making it difficult to mass-produce, and clusters are formed in the grown thin film, and the size of the clusters limits the film thickness of the superlattice. There was a knitting point while it was being done.
そこで本発明の目的はＭＯＣＶＤ装置程度の量産性全維
持したまま、界面の急峻性に優れた半導体超格子を容易
に製造できる半導体超格子の製造方法を提供するところ
にある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor superlattice that can easily manufacture a semiconductor superlattice with excellent interface steepness while maintaining all the mass productivity comparable to an MOCVD apparatus.
本発明の半導体超格子の↓遣方法は、有機金属気相成長
法による半導体薄膜のエピタキシャル成長催中に、該半
導体薄膜表面に断続的に紫外線を照射する紫外・′涙切
起工程を含むことを特徴としている。The method for forming a semiconductor superlattice of the present invention includes an ultraviolet irradiation step in which the surface of the semiconductor thin film is intermittently irradiated with ultraviolet rays during the epitaxial growth of the semiconductor thin film by metalorganic vapor phase epitaxy. It is a feature.
牛導体＃膜の一つであるアルミニワムーカリウムーひ素
（Ａ４ＧａＡｓ とも言う）結晶のＭＯＯｔ７Ｄ法に
よるエピタキシャル成長途中に、牛→本基板表面に紫外
線（この場合エキシマレーザ）を照射するとエピタキシ
ャル層中のアルミニウム組成が増加する。このとす、膜
厚方向のアルミニウム組成比の遷＄唱すなわち界面の急
峻性は、／１寸外線照射切換時間と牛導体薄嗅の成長速
度との噴で与えら１しる。紫外線照射切換時間かエキシ
マレーザの最短パルス間隔として５ミリ秒であり、−男
手導体薄膜の成長速度ｄ：ｔ＋ｏｃｖｏ法の楠合−般的
に１秒当り１０オングストロ一ム程度であるから、前述
の定義より遷移幅ばｃｌ、０５オングストローム提要と
なる。この値は１原子省（１原子層はＡｔＧａＡｓの場
合約２．８オングストローム〕より十分に小さな値であ
るから、したがって、本発明の方法によると界面の急峻
性全単原子層以下で制御可能となる。During the epitaxial growth of an aluminum conductor film, aluminum arsenic (also called A4GaAs), using the MOOt7D method, when the surface of the substrate is irradiated with ultraviolet rays (excimer laser in this case), the aluminum in the epitaxial layer is composition increases. In this case, the evolution of the aluminum composition ratio in the film thickness direction, that is, the steepness of the interface, is given by the changeover time of external radiation irradiation by 1 inch and the growth rate of the conductor. The ultraviolet irradiation switching time or the shortest pulse interval of the excimer laser is 5 milliseconds, and - the growth rate of the conductor thin film d: t + Kusunoki of the ocvo method - is generally about 10 angstroms per second, so the above-mentioned According to the definition, the transition width is cl, 05 angstroms. This value is sufficiently smaller than one atomic layer (one atomic layer is about 2.8 angstroms in the case of AtGaAs), and therefore, according to the method of the present invention, it is possible to control the steepness of the interface to less than a total monoatomic layer. Become.
原料としてトリメチルガリウム（以下ＴＭＧと略す）、
トリメチルアルミニウム（以下ＴＭＡと略す〕およびア
ルシン（以下ＡｓＨ３と略す）を使用し、これらの原料
を高温下に置かれた半導体基板上で熱分解することによ
シＡｔＧａＡθ系半導体＃膜をエピタキシャル成長させ
るいわゆる有機金属気相成長法において、成長した半導
体薄膜のＭ組成比Ｘは、気山中のＴＭＧ、ＴＭＡおよび
成長温度によって稍度よくコントロールでさる。このよ
うな有機金属気相成長法によるＡ４ＧａＡｅ系半導体薄
膜のエピタキシャル成長途中で、牛導体薄膜炙面に波長
１９３ｎｍのＡｒＦ’媒体エキシマレーザを照射すると
ＴＭＡは光励起によって分解が促進され、エキシマレー
ザを照射している部分の気相中のＭ組成比が実効的に増
加するとともに、エキシマレーザ照射部のＡｊＧａＡｓ
半導体薄膜表面での表面光化学反応によりＭのとり込み
率が増加するため、エキシマレーザ照射部のＡｔＧａＡ
ｓ半導体薄膜中のＭ■成比はエキシマレーザ非照射部の
成組成比と比較して大きくなる。この様子を第１図に示
す。第１因のグラフの横軸は成長＠度、縦軸はＡｊＧ
Ａ８半纏体薄模中のＭ組成比Ｘａｌ−ｘ
である。回線ａばＡｒｐ媒体エキシマレーザ非照射部の
様子を承し、曲＠ｂ：はエキシマレーザ照射部の様子を
示している。図中に示す成艮＠度Ｔ。Trimethyl gallium (hereinafter abbreviated as TMG) as a raw material,
The so-called epitaxial growth method uses trimethylaluminum (hereinafter abbreviated as TMA) and arsine (hereinafter abbreviated as AsH3) and thermally decomposes these raw materials on a semiconductor substrate placed under high temperature to epitaxially grow an AtGaAθ-based semiconductor film. In the organometallic vapor phase epitaxy method, the M composition ratio X of the grown semiconductor thin film is precisely controlled by the TMG and TMA in the gaseous material and the growth temperature. During epitaxial growth, when the heated surface of the conductor thin film is irradiated with an ArF' medium excimer laser with a wavelength of 193 nm, the decomposition of TMA is promoted by optical excitation, and the M composition ratio in the gas phase in the area irradiated with the excimer laser becomes effective. As the amount of AjGaAs in the excimer laser irradiation area increases,
Since the M uptake rate increases due to the surface photochemical reaction on the semiconductor thin film surface, AtGaA in the excimer laser irradiated area increases.
The M2 composition ratio in the s semiconductor thin film is larger than the composition ratio of the non-excimer laser irradiated area. This situation is shown in FIG. The horizontal axis of the graph of the first factor is growth@degree, and the vertical axis is AjG
This is the M composition ratio Xal-x in the A8 semi-integrated thin model. The line a shows the state of the Arp medium where the excimer laser is not irradiated, and the song @b: shows the state of the excimer laser irradiated part. Seiwa @ degree T shown in the figure.
では、エキシマレーザ非照射部のＡ！組成比がＸｉであ
るのに対し、エキシマレーザ照射部のＡＺ、［成比ばｘ
２であり、Ｘ２＞ＸＩの関係にあることから、エキシマ
レーザ照射部のＭ組成比が犬きくなることがわかろつ第
１凶に示したエキシマレーザ照射の特性全考慮し、第２
図に本発明の半導体超格子の製１告方法の一実施例を示
す。第２図（ａ）は半・４体超格子の２Ｊ造方法の１３
１段階？示す凶であり、成長温度Ｔｏ ンこカロ熱さ
れたＧａＡｓ 単砧晶基板２０１の表面ＩＣＴ Ｍ
Ｇ 、 Ｔ Ｍ Ａ 、 Ａ ＢＨ３オｊびキャリアガ
スとしての水素（以下［（２と略す〕を含む原料ガス２
０２を流し、熱分解によってＭ組成比がＸｌのＡｔｘＩ
Ｇａ１−ｘＡｓ半導体薄膜２０３ｆｔエピタキシャル
成長している工程を示している。Now, A! While the composition ratio is Xi, the AZ of the excimer laser irradiation part, [composition ratio x
2, and there is a relationship of X2 >
The figure shows an embodiment of the method for manufacturing a semiconductor superlattice according to the present invention. Figure 2(a) shows 13 of the 2J construction method for half-4-body superlattice.
1st stage? The surface ICT of the GaAs monocrystalline substrate 201 is heated at a growth temperature To.
Raw material gas 2 containing G, TMA, A BH3 and hydrogen as a carrier gas (hereinafter abbreviated as 2)
AtxI with an M composition ratio of Xl is produced by thermal decomposition.
It shows the process of epitaxial growth of 203 ft of Ga1-xAs semiconductor thin film.
第２図（ａ）に示した第１段階は有機金属気相成長法に
よるエピタキシャル成長工程である。第２図（ｂ）は半
導体超格子の製造方法の爾２段階を示す図である。第２
段階は、第２圀（ａ）に示した第１段階の成長条件の下
で、半導体薄膜をエピタキシギル成長しながら波長１９
３ ｎｍのＡｒＦ媒体エキシマレーザを半導体薄膜表面
に照射する工程である。The first stage shown in FIG. 2(a) is an epitaxial growth process by metal organic vapor phase epitaxy. FIG. 2(b) is a diagram showing the second step of the method for manufacturing a semiconductor superlattice. Second
In the step, under the growth conditions of the first step shown in the second section (a), a semiconductor thin film is epitaxially grown while a wavelength of 19.
This is a step in which the surface of the semiconductor thin film is irradiated with a 3 nm ArF medium excimer laser.
嬉２図（ｂ） において、エキシマレーザ２０４を照射
すると、Ｍ組成比がｘ２のＡｔｘ２ Ｇａ、−ｘＡａ半
導体博模２０５がエピタキシャル成長する。エキシマレ
ーザ照射するとＡ！組成比がｘ２になるのは第１図に示
すグラフより明らかである。第２図（ｅ）は半導体超格
子の製造方法の第３段階金示す図である。第３段階は第
１段階と全く同様の条ＹＦで成長する工程である。した
がってＡ１．組成比がＸＩのＡｔＸ４ ＧＩＬＪ Ｘ
Ｉ ＡＩＩ＋半導体薄膜２０６がエピタキシャル５！ｊ
、長される。第２１Ｊ（ｄ）は半導体超格子の製造方法
の第４段階を示す図である。第４段階では再びエキシマ
レーザ２０４が照射され、成長条件は第２段階と全く同
様である。したがってｕ；ｍ酸比がｘ２のＡ ｔＸ２
Ｇ ａｌ Ｘ Ａ Ｌ３ 半導体薄膜２０７がエピ
タキシャル成長される。さらに第３段階の工程および箒
４段階の工程を〈υ返し行なえば多層の半導体超格子を
形成できる。In Figure 2 (b), when the excimer laser 204 is irradiated, an Atx2 Ga, -xAa semiconductor 205 with an M composition ratio of x2 is epitaxially grown. A when excimer laser irradiates! It is clear from the graph shown in FIG. 1 that the composition ratio is x2. FIG. 2(e) is a diagram showing the third step of the method for manufacturing a semiconductor superlattice. The third stage is a process of growing YF strips, which is exactly the same as the first stage. Therefore A1. AtX4 GILJ X with composition ratio XI
I AII + semiconductor thin film 206 is epitaxial 5! j
, lengthened. 21J(d) is a diagram showing the fourth step of the method for manufacturing a semiconductor superlattice. In the fourth stage, the excimer laser 204 is irradiated again, and the growth conditions are exactly the same as in the second stage. Therefore, A tX2 with u;m acid ratio x2
A G al X A L3 semiconductor thin film 207 is epitaxially grown. Furthermore, by repeating the third step and the fourth step, a multilayer semiconductor superlattice can be formed.
娼５図に本発明により作製した半導体超格子の断面図を
示す。第２図（ａ）〜（ｄ）に示した実施例に従って、
有機金員：気相成長法による半導体薄膜のエピタキシャ
ル成長途中に、断、統帥に紫外線を照射する紫外線励起
工程によって第３図に示す多１−の半導体薄膜より成る
牛導体′Ｉｉｉ浴子を作製した。FIG. 5 shows a cross-sectional view of a semiconductor superlattice fabricated according to the present invention. According to the embodiment shown in FIGS. 2(a) to (d),
Organic metal: During the epitaxial growth of a semiconductor thin film using the vapor phase growth method, an ultraviolet ray excitation process was performed in which UV was irradiated on the top and bottom of the conductor to produce a yukata consisting of a multilayer semiconductor thin film as shown in Fig. 3. .
成長条件は成長温度が６７０ Ｃ，成長圧力１００Ｔｏ
ｒｒ、 Ｔ Ｍ Ｇ流量α５ ｓｅｃｍ、 Ｔ Ｍ
Ａ流−ｔ Ｏ−５８ＣＣｍ、 Ａ８ Ｈ３流″ｉ１８
ｏ ｓｃｃｍ 、全ガス流ｉ５ｓ’ＬＭとし、（１００
）２°（＋ｆｆ ｔｏ（１１０）ＧａＡｓ単結晶基板
を用いた。この条件下で成長速度は約五４μｍ ／ ｈ
ｒであった。エキシマレーザ照射の条件は、波長が１
９３ｎｍ、１パルス当りのエネルギーが８０ ｍ：ｆ／
ｄ、 ぐ）返し周波数が１００Ｆｉｚ。The growth conditions are a growth temperature of 670 C and a growth pressure of 100 To.
rr, T M G flow rate α5 secm, T M
A flow-t O-58CCm, A8 H3 flow''i18
o sccm , total gas flow i5s'LM, (100
) 2° (+ff to (110)) GaAs single crystal substrate was used. Under this condition, the growth rate was approximately 54 μm/h
It was r. The conditions for excimer laser irradiation are that the wavelength is 1
93 nm, energy per pulse is 80 m:f/
d, g) Return frequency is 100Fiz.
平均の光出力が８Ｗ／−である。エキシマレーザ照射は
アパーチャの開閉によって行なったが、アパーチャの開
閉に要する時間は１０ｍ５ｅｃであった。The average light output is 8W/-. Excimer laser irradiation was performed by opening and closing an aperture, and the time required to open and close the aperture was 10 m5ec.
以上の条件の下でエキシマレーザ照射時間を５秒、非照
射時間を５秒に設定して、照射した層数を４としてＡｔ
ＧａＡｓ系半導体超格子の裏作を行なった。Under the above conditions, the excimer laser irradiation time was set to 5 seconds, the non-irradiation time was set to 5 seconds, and the number of irradiated layers was set to 4.
We performed preliminary work on a GaAs-based semiconductor superlattice.
第３図に作製した半導体超格子の断面図を示す。FIG. 3 shows a cross-sectional view of the fabricated semiconductor superlattice.
ＧａＡｓ単結晶基板５０１の底面にエキシマレーザ照射
しないＭ組数′毘がＸ１＝１２９、膜厚が５０オングス
トロームのＡＬｇ −２９０ａｐ・ｙｌｋＢ半４体τ４
膜３０２とエキシマレーザ照射した成組酸比がｘ２＝α
３８、膜厚が５０オングストロームの鳩、３８Ｇａ０．
６！和半導体薄膜３０５を償ｊ領しである。この半導体
超格子の各薄膜間の４移幅は、反射スペクトルのエネル
ギービーク値から推定して１０オングストローム以下で
あることがわかった。The bottom surface of the GaAs single crystal substrate 501 is not irradiated with excimer laser. The number of M pairs 'bi is X1 = 129, and the film thickness is 50 angstroms.
The composition acid ratio of the film 302 and the excimer laser irradiation is x2=α
38, pigeon with a film thickness of 50 angstroms, 38Ga0.
6! The Japanese semiconductor thin film 305 is used for compensation. It was found that the 4-shift width between each thin film of this semiconductor superlattice was estimated from the energy peak value of the reflection spectrum to be 10 angstroms or less.
ここにあげた実施タリではＡｊＧａＡｓ 系中導体超
格子について述べたが、本発明はその他のＩｎＧａＡｓ
系、ＧａＡｓＰ 系、工ｎＧａＰ 系などのｌ［−
’／族化合物半導体およびＺｎＳＳｅ 系、Ｚｎ５ｅ
Ｔａ系、Ｃｄ［（ｇＴｅ系などのｎ−■族化合物半導体
、カルコパイライト系半導体等の材料から成る半導体超
格子の製造にも適用できる。また、紫外線としてＡｒＦ
４に、体エキシマレーザを使用したが、この他にＫｒＦ
媒体エキシマレーザｘｅｃＬ媒体エキシマレーザ、水銀
ランプなどを使用しても良い。In the implementation example presented here, the AjGaAs medium conductor superlattice was described, but the present invention applies to other InGaAs
l[-
'/group compound semiconductors and ZnSSe series, Zn5e
It can also be applied to the production of semiconductor superlattices made of materials such as Ta-based, Cd[(gTe-based, etc.) n-■ group compound semiconductors, and chalcopyrite-based semiconductors.
In 4, a body excimer laser was used, but in addition to this, KrF
Medium excimer laser xecL A medium excimer laser, a mercury lamp, etc. may be used.
本発明には次のような幼果がある。 The present invention includes the following young fruits.
（１） 原料ガスの切り換えで；ｔく、元のりＪり換
えによって半導体超格子を作゛・ρするので、超格子界
面の急峻性に優れたものが作製可能であり、ＩＱ：Ｉ−
＋ガスの切り換え機（４が必要ないので、製造装置が簡
単で安価にできる。(1) Since a semiconductor superlattice is created by changing the raw material gas and switching the source, it is possible to create a superlattice with excellent steepness at the interface, and IQ:I-
+ Gas switching machine (4) is not required, so the manufacturing equipment is simple and inexpensive.
（２）紫外域を照射する頭載を選択的にすれば、半導体
超格子を作製する・４域を曲内で選択でさ、二次的な分
布金持たせら７″Ｌ／Ｓ０その結果埋込み望・、（子井
戸半導体ンーザ寺の旨度なデバイスや新しい材料の作製
が可能にある。(2) By selectively irradiating the head in the ultraviolet region, a semiconductor superlattice can be created. 4 regions can be selected within the song, and a secondary distribution of gold can be applied to 7"L/S0, resulting in embedding. Hopefully, it will be possible to create devices and new materials that are as effective as Koido semiconductors.
（３）照射する紫外線の強度を変えると組成を連続的に
変調することができる。したがって、ＧＲ工Ｎ−８ｏｌ
（半導体レーザ等のデバイス作製が容易となる。(3) By changing the intensity of the irradiated ultraviolet rays, the composition can be continuously modulated. Therefore, GR engineering N-8ol
(It becomes easier to manufacture devices such as semiconductor lasers.
第１因は、ＡＡＧａＡｓ系半導体薄膜中のＡ１組成比の
エキシマレーザ照射部とエキシマレーザ非照射部の相異
全示したグラフである。
第２図（ａ）〜（ｄ）は本発明による半導体超格子の製
造方法の実施例を４１から第４段階までの工程別に示し
た図である。
２０１ ・・・ｏａＡｓ単ＡΔ晶基板２０２
・・・原料ガス
２０５ 、２０６−−・ＡｔｘｌＧａｌ−Ａｓ半導体薄
膜２０４ ・・・エキシマレーザ
２０５ 、２０７ ・−Ａｔｘ２Ｇａｌ −ｘ２ Ａｓ
半導体薄膜第３図は本発明により作製した半導体超格子
の断面図を示している。
３０１ ・・・ＧａＡ３単結晶基板
５０２ − Ａ４．２ｇＧａｇ、７１Ａ８半導体薄膜
３０３ °” Ａ４ ・３Ｂ Ｇ ａｏ、６ｚ Ａ
ｓ ’以 上The first factor is a graph showing all the differences between the excimer laser irradiated part and the excimer laser non-irradiated part of the A1 composition ratio in the AAGaAs semiconductor thin film. FIGS. 2(a) to 2(d) are diagrams showing an embodiment of the method for manufacturing a semiconductor superlattice according to the present invention, step by step, from step 41 to step 4. 201...oaAs single AΔ crystal substrate 202
... Raw material gas 205, 206--AtxlGal-As semiconductor thin film 204...Excimer laser 205, 207...Atx2Gal-x2 As
Semiconductor Thin Film FIG. 3 shows a cross-sectional view of a semiconductor superlattice fabricated according to the present invention. 301 ... GaA3 single crystal substrate 502 - A4.2gGag, 71A8 semiconductor thin film 303°" A4 ・3B Gao, 6z A
s' or more
Claims (2)
成る半導体超格子の製造方法において、有機金属気相成
長法による半導体薄膜のエピタキシャル成長途中に、該
半導体薄膜表面に断続的に紫外線を照射する紫外線励起
工程を含むことを特許とする半導体超格子の製造方法。(1) In a method for manufacturing a semiconductor superlattice formed by laminating at least two or more types of semiconductor ultra-thin films, the surface of the semiconductor thin film is intermittently irradiated with ultraviolet rays during the epitaxial growth of the semiconductor thin film by metal organic vapor phase epitaxy. A patented method for manufacturing a semiconductor superlattice that includes an ultraviolet excitation process.
特徴とする特許請求の範囲第１項に記載の半導体超格子
の製造方法。(2) The method for manufacturing a semiconductor superlattice according to claim 1, characterized in that an excimer laser is used as the ultraviolet light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14453586A JPS631025A (en) | 1986-06-20 | 1986-06-20 | Manufacture of semiconductor superlattice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14453586A JPS631025A (en) | 1986-06-20 | 1986-06-20 | Manufacture of semiconductor superlattice |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS631025A true JPS631025A (en) | 1988-01-06 |
Family
ID=15364569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14453586A Pending JPS631025A (en) | 1986-06-20 | 1986-06-20 | Manufacture of semiconductor superlattice |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS631025A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6237066A (en) * | 1985-08-05 | 1987-02-18 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Power source circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833826A (en) * | 1981-08-22 | 1983-02-28 | Nippon Telegr & Teleph Corp <Ntt> | Vapor phase epitaxial growth |
| JPS61222219A (en) * | 1985-03-28 | 1986-10-02 | Canon Inc | Manufacture of multilayer thin film structure |
| JPS62144320A (en) * | 1985-12-19 | 1987-06-27 | Seiko Epson Corp | Manufacture of super-lattice semiconductor |
-
1986
- 1986-06-20 JP JP14453586A patent/JPS631025A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833826A (en) * | 1981-08-22 | 1983-02-28 | Nippon Telegr & Teleph Corp <Ntt> | Vapor phase epitaxial growth |
| JPS61222219A (en) * | 1985-03-28 | 1986-10-02 | Canon Inc | Manufacture of multilayer thin film structure |
| JPS62144320A (en) * | 1985-12-19 | 1987-06-27 | Seiko Epson Corp | Manufacture of super-lattice semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6237066A (en) * | 1985-08-05 | 1987-02-18 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Power source circuit |
| JPH0328154B2 (en) * | 1985-08-05 | 1991-04-18 | Intaanashonaru Bijinesu Mashiinzu Corp |
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