JPS63102265A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS63102265A
JPS63102265A JP61247531A JP24753186A JPS63102265A JP S63102265 A JPS63102265 A JP S63102265A JP 61247531 A JP61247531 A JP 61247531A JP 24753186 A JP24753186 A JP 24753186A JP S63102265 A JPS63102265 A JP S63102265A
Authority
JP
Japan
Prior art keywords
gate electrode
island
polycrystalline silicon
recrystallized
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61247531A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0588544B2 (cg-RX-API-DMAC7.html
Inventor
Shigenobu Akiyama
秋山　重信
Genichi Yamazaki
山崎　弦一
Yasuaki Terui
照井　康明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61247531A priority Critical patent/JPS63102265A/ja
Publication of JPS63102265A publication Critical patent/JPS63102265A/ja
Publication of JPH0588544B2 publication Critical patent/JPH0588544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Recrystallisation Techniques (AREA)
JP61247531A 1986-10-20 1986-10-20 半導体装置の製造方法 Granted JPS63102265A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61247531A JPS63102265A (ja) 1986-10-20 1986-10-20 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61247531A JPS63102265A (ja) 1986-10-20 1986-10-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63102265A true JPS63102265A (ja) 1988-05-07
JPH0588544B2 JPH0588544B2 (cg-RX-API-DMAC7.html) 1993-12-22

Family

ID=17164884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61247531A Granted JPS63102265A (ja) 1986-10-20 1986-10-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63102265A (cg-RX-API-DMAC7.html)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5817548A (en) * 1995-11-10 1998-10-06 Sony Corporation Method for fabricating thin film transistor device
US5849611A (en) * 1992-02-05 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming a taper shaped contact hole by oxidizing a wiring
US6054739A (en) * 1994-12-16 2000-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having channel refractive index in first and second directions
WO2003044867A1 (en) * 2001-11-19 2003-05-30 Advanced Lcd Technologies Development Center Co., Ltd. Thick-film semiconductor device and its manufacturing method
US6700133B1 (en) 1994-03-11 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP2006313727A (ja) * 2005-04-08 2006-11-16 Toshiba Lighting & Technology Corp 電球型ランプ
JP2010086973A (ja) * 2005-04-08 2010-04-15 Toshiba Lighting & Technology Corp 電球型ランプ
US8360606B2 (en) 2009-09-14 2013-01-29 Toshiba Lighting & Technology Corporation Light-emitting device and illumination device
US8450915B2 (en) 2008-01-07 2013-05-28 Toshiba Lighting & Technology Corporation LED bulb and lighting apparatus
US8979315B2 (en) 2005-04-08 2015-03-17 Toshiba Lighting & Technology Corporation Lamp having outer shell to radiate heat of light source
US9018828B2 (en) 2007-10-16 2015-04-28 Toshiba Lighting & Technology Corporation Light emitting element lamp and lighting equipment
WO2024029390A1 (ja) * 2022-08-01 2024-02-08 三井化学株式会社 基板積層体の製造方法及び半導体装置

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849611A (en) * 1992-02-05 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming a taper shaped contact hole by oxidizing a wiring
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US6700133B1 (en) 1994-03-11 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6054739A (en) * 1994-12-16 2000-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having channel refractive index in first and second directions
US6242292B1 (en) * 1994-12-16 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Method of producing a semiconductor device with overlapped scanned linear lasers
US6274885B1 (en) 1994-12-16 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device with TFTs of different refractive index
US5817548A (en) * 1995-11-10 1998-10-06 Sony Corporation Method for fabricating thin film transistor device
US5943593A (en) * 1995-11-10 1999-08-24 Sony Corporation Method for fabricating thin film transistor device
WO2003044867A1 (en) * 2001-11-19 2003-05-30 Advanced Lcd Technologies Development Center Co., Ltd. Thick-film semiconductor device and its manufacturing method
US6953714B2 (en) 2001-11-19 2005-10-11 Advanced Lcd Technologies Development Center Co., Ltd. Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it
JP2010086973A (ja) * 2005-04-08 2010-04-15 Toshiba Lighting & Technology Corp 電球型ランプ
JP2006313727A (ja) * 2005-04-08 2006-11-16 Toshiba Lighting & Technology Corp 電球型ランプ
US8979315B2 (en) 2005-04-08 2015-03-17 Toshiba Lighting & Technology Corporation Lamp having outer shell to radiate heat of light source
US8992041B2 (en) 2005-04-08 2015-03-31 Toshiba Lighting & Technology Corporation Lamp having outer shell to radiate heat of light source
US9103541B2 (en) 2005-04-08 2015-08-11 Toshiba Lighting & Technology Corporation Lamp having outer shell to radiate heat of light source
US9234657B2 (en) 2005-04-08 2016-01-12 Toshiba Lighting & Technology Corporation Lamp having outer shell to radiate heat of light source
US9249967B2 (en) 2005-04-08 2016-02-02 Toshiba Lighting & Technology Corporation Lamp having outer shell to radiate heat of light source
US9772098B2 (en) 2005-04-08 2017-09-26 Toshiba Lighting & Technology Corporation Lamp having outer shell to radiate heat of light source
US9018828B2 (en) 2007-10-16 2015-04-28 Toshiba Lighting & Technology Corporation Light emitting element lamp and lighting equipment
US8450915B2 (en) 2008-01-07 2013-05-28 Toshiba Lighting & Technology Corporation LED bulb and lighting apparatus
US8360606B2 (en) 2009-09-14 2013-01-29 Toshiba Lighting & Technology Corporation Light-emitting device and illumination device
WO2024029390A1 (ja) * 2022-08-01 2024-02-08 三井化学株式会社 基板積層体の製造方法及び半導体装置
JPWO2024029390A1 (cg-RX-API-DMAC7.html) * 2022-08-01 2024-02-08

Also Published As

Publication number Publication date
JPH0588544B2 (cg-RX-API-DMAC7.html) 1993-12-22

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Legal Events

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