JPS63102224A - Manufacturing furnace for semiconductor element - Google Patents

Manufacturing furnace for semiconductor element

Info

Publication number
JPS63102224A
JPS63102224A JP24756186A JP24756186A JPS63102224A JP S63102224 A JPS63102224 A JP S63102224A JP 24756186 A JP24756186 A JP 24756186A JP 24756186 A JP24756186 A JP 24756186A JP S63102224 A JPS63102224 A JP S63102224A
Authority
JP
Japan
Prior art keywords
furnace
tube
thermocouple
quartz tube
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24756186A
Other languages
Japanese (ja)
Other versions
JPH0744158B2 (en
Inventor
Hideaki Kato
秀明 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP24756186A priority Critical patent/JPH0744158B2/en
Publication of JPS63102224A publication Critical patent/JPS63102224A/en
Publication of JPH0744158B2 publication Critical patent/JPH0744158B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To monitor a temperature in a quartz tube furnace even in the state of machining treatment in which a wafer is housed into the furnace, and to improve the repeatability and uniformity of treatment machining by housing a thermocouple between an internal silica tube and an external quartz tube having double quartz tube structure. CONSTITUTION:Furnace tubes 11, 12 Consisting of two hollow cylindrical bodies having different bores are fitted in the state of loose fit along the longitudinal direction in a diffusion furnace 10 having double quartz tube structure, and the diffusion furnace 10 has an electric furnace 14 in which a heater is disposed onto the outer surface of a soaking tube 13 arranged so as to include the furnace tubes 11, 12. A gas flow is fed into the internal furnace tube 11 and between the internal furnace tube 11 and the external furnace tube 12, at least one thermocouple 15 is set between the internal furnace tube 11 and the external furnace tube 12, and a diffusion temperature in the furnace tube 11 can be monitored at a real time. Heater currents can also be controlled directly by the operation of the thermocouple.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は集積回路等の半導体素子の製造炉フあって、更
に詳述すれば、シリコン等の半導体に熱処理を施して酸
化または拡散を行う酸化・拡散炉に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a manufacturing furnace for semiconductor devices such as integrated circuits, and more specifically, to heat-treating semiconductors such as silicon to oxidize or diffuse them. Regarding oxidation/diffusion furnaces.

〔従来技術〕[Prior art]

従来より、半導体製造プロセスに於て、酸化または拡散
のために一般的に用いられている炉は、第3図に図示す
る如く構成されている。
Conventionally, a furnace commonly used for oxidation or diffusion in semiconductor manufacturing processes is constructed as shown in FIG.

すなわち、この炉は、加工すべき半導体ウエノ・を収容
可能にした石英&の炉管1と、該炉管1を加熱するため
に囲繞されたヒータ2と、炉管1およびヒータ2との間
に配置されてヒータ2からの汚染を防止すると共に、ヒ
ータ2からの放射熱を均一にする均熱管3とから成って
いる。
That is, this furnace consists of a quartz furnace tube 1 capable of accommodating the semiconductor wafer to be processed, a heater 2 surrounding the furnace tube 1, and a space between the furnace tube 1 and the heater 2. It consists of a soaking tube 3 which is placed in the heater 2 to prevent contamination from the heater 2 and to uniformize the radiant heat from the heater 2.

このような炉により、例えば拡散処理は、適当な不純物
としての原子を含むガスを炉管に通過させ、炉温により
ウエノ・表面に行われる。
With such a furnace, for example, a diffusion process is carried out on the ueno surface by passing a gas containing atoms as suitable impurities through the furnace tube and at the furnace temperature.

係る製造炉マは、加工される材料の反グ性と均等性は、
炉内の温度安定度と均等性によって得られることが良く
知られている。従って、炉内温度を測定し、制御するこ
と並びに炉内の汚染を防止して均等性を維持することは
重要かつ不可欠フある。
In such a manufacturing furnace, the curvature and uniformity of the processed material are
It is well known that temperature stability and uniformity within the furnace are achieved. Therefore, it is important and essential to measure and control the furnace temperature as well as to prevent contamination and maintain uniformity within the furnace.

従来炉では、炉内の汚染を防止して温度制御を行うため
に、熱電対を用いかつ炉管の外側で温度測定を行ってい
た。また、作業処理工程前に炉内温度を別途測定し、こ
の炉内温度をもとに前記外部測定により得られた温度を
補正するようにして、ヒータ電流を制御していた。
In conventional furnaces, in order to prevent contamination inside the furnace and control the temperature, a thermocouple was used to measure the temperature outside the furnace tube. Furthermore, the temperature inside the furnace is separately measured before the work processing process, and the temperature obtained by the external measurement is corrected based on this temperature inside the furnace, thereby controlling the heater current.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上述したとおり従来炉では、炉管の外側
で測定して得られた外部温度に相応して炉内温度を制御
していたため、例えば作業状態下でガス流の状態によっ
て左右される温度変化には必ずしも追従〒きていなかっ
た。この点を解決するためには、炉内温度に近似した外
部温度が測定されればよい訳↑あり、そのために、均熱
管を取外すことも考えられるが、しかし、均熱管は汚染
防止上から取外すことができなかった。
However, as mentioned above, in conventional furnaces, the temperature inside the furnace was controlled according to the external temperature measured outside the furnace tube. did not necessarily follow suit. In order to solve this problem, it is sufficient to measure the external temperature that is close to the temperature inside the furnace, and for that purpose, it is possible to remove the soaking tube. However, to prevent contamination, the soaking tube should be removed. I couldn't.

本発明の目的は、作業状態下の炉内の温度が実時間で測
定できて、加工される材料の反覆性と均等性が向上でき
る半導体素子の製造炉を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device manufacturing furnace in which the temperature inside the furnace under working conditions can be measured in real time and the repeatability and uniformity of processed materials can be improved.

〔問題点を解決するための手段〕[Means for solving problems]

すなわち、本発明の上記目的は、中空円筒体から成る石
英管を更に中空円筒体の石英管〒囲んだ炉管を囲むよう
に配設されたヒータにより該炉管を加熱し、炉管内に配
置したシリコンウェハを高温処理する半導体素子の製造
炉において、炉管の長手方向に沿って内部石英管と外部
石英管との間に少なくとも1つ熱電対を設け、該熱電対
により炉内温度が測定されることを特徴とする半導体素
子の製造炉により達成される。
That is, the above object of the present invention is to heat a quartz tube made of a hollow cylindrical body with a heater arranged so as to surround the quartz tube made of a hollow cylindrical body, and to heat the quartz tube made of a hollow cylindrical body with a heater disposed so as to surround the furnace tube. In a semiconductor device manufacturing furnace that processes silicon wafers at high temperatures, at least one thermocouple is provided between an internal quartz tube and an external quartz tube along the longitudinal direction of the furnace tube, and the temperature inside the furnace is measured by the thermocouple. This is achieved by a semiconductor device manufacturing furnace characterized by:

〔作用〕[Effect]

熱電対は内部石英管と外部石英管との間に納められた状
態で炉内温度を測定するため、シリコンウェハが内部石
英管内に収容された処理作業下マ、炉管内の反応に影響
を与えない。
The thermocouple is placed between the inner quartz tube and the outer quartz tube to measure the temperature inside the furnace. do not have.

〔実施例〕〔Example〕

以下、図面により本発明の詳細な説明する。 Hereinafter, the present invention will be explained in detail with reference to the drawings.

第1図および第2図は本発明の半導体素子の製造炉の1
実施例を図示しており、第2図は第1図に示す炉の要部
断面を示している。なお、本実施例では拡散炉を例示し
て説明する。
FIGS. 1 and 2 show one of the manufacturing furnaces for semiconductor devices according to the present invention.
An example is illustrated, and FIG. 2 shows a cross section of a main part of the furnace shown in FIG. 1. Note that this embodiment will be explained using a diffusion furnace as an example.

本発明が適用される2重石英管構造の拡散炉10は、口
径が異なる2本の中空円筒体の炉管11゜12が長手方
向に沿って遊嵌状態に嵌め合わされており、他に前記2
本の炉管11,12を内包するよ5Vc配置された均熱
管13と、該均熱管13の外面に配設されたヒータから
成る電気炉14と、を備えている。前記炉管11,12
は石英灸から成っており、内方の炉管11は拡散が行わ
れるシリコンウェハ16を内部に収容可能に設けている
A diffusion furnace 10 having a double quartz tube structure to which the present invention is applied has two hollow cylindrical furnace tubes 11 and 12 having different diameters loosely fitted together along the longitudinal direction. 2
The electric furnace 14 includes a soaking tube 13 arranged at 5 Vc so as to enclose two furnace tubes 11 and 12, and an electric furnace 14 consisting of a heater disposed on the outer surface of the soaking tube 13. The furnace tubes 11 and 12
is made of quartz moxibustion, and the inner furnace tube 11 is provided so as to be able to accommodate therein a silicon wafer 16 on which diffusion is to be performed.

また、内方の炉管11及び内方の炉管11と外方の炉管
12どの間はガス流が供給されるように設けられており
、かつ内方の炉管11と外方の炉管12との間には炉管
に沿って少な(とも1つの熱電対が収容可能に設けられ
ている。
Further, the inner furnace tube 11 and the space between the inner furnace tube 11 and the outer furnace tube 12 are provided so that a gas flow is supplied thereto, and between the inner furnace tube 11 and the outer furnace tube 12. Along the furnace tube, at least one thermocouple can be accommodated between the tube 12 and the furnace tube.

このよ5に構成された製造炉を用い、シリコンウェハ1
6に外部から不純物を添加する拡散は、シリコンウェハ
16を石英から成る受台17に乗せて炉管11内に収容
させた後、炉管11の一方から例えばB(ホウ素)を供
給し、このBを含む雰囲気の中〒シリコンウェハ16を
電気炉14によって900C〜100074加熱して行
う。この際、内部炉v11と外部炉管12との間に少な
くとも1つ熱電対15がセツティングされており、炉管
11内の拡散温度を実時間で監視フきる。また、炉管内
の複数個所の温度を一度に測定できる。
Using the manufacturing furnace configured as shown in 5 above, a silicon wafer 1
In the diffusion of externally adding impurities to 6, the silicon wafer 16 is placed on a pedestal 17 made of quartz and housed in the furnace tube 11, and then, for example, B (boron) is supplied from one side of the furnace tube 11. The silicon wafer 16 is heated to 900 to 100,074 degrees in an electric furnace 14 in an atmosphere containing B. At this time, at least one thermocouple 15 is set between the inner furnace v11 and the outer furnace tube 12, so that the diffusion temperature within the furnace tube 11 can be monitored in real time. Additionally, the temperature at multiple locations within the furnace tube can be measured at once.

熱電対は、被測定温度および使用される雰囲気に適した
ものが選択されることが望ましい。また、熱電対の動作
によりヒータ電流を直接制御するようVC構成すること
も出来る。
It is desirable to select a thermocouple that is suitable for the temperature to be measured and the atmosphere in which it will be used. It is also possible to configure a VC so that the heater current is directly controlled by the operation of a thermocouple.

前記実施例フは、ホウ素原子を拡散してp形シリコンを
作る場合を述べたが、Plン)を拡散してn形シリコン
を作る場合〒あっても、更にまた、酸化性ガスを供給し
てシリコン酸化膜を形成する酸化炉にも本発明は適用で
きることは当然↑ある。
The above embodiment describes the case where p-type silicon is made by diffusing boron atoms, but even if n-type silicon is made by diffusing P1, it is also possible to supply an oxidizing gas. Of course, the present invention can also be applied to an oxidation furnace for forming a silicon oxide film.

〔発明の効果〕〔Effect of the invention〕

以上記載したとおり、本発明の製造炉によれば、2重石
英管構造の内部石英管と外部石英管との間に熱電対を収
容可能に設けたことにより、ウェハな炉内に収容した加
工処理状態でも、石英管炉内の温度を監視マきる。また
、このように加工処理状態下の温度が実時間で測定〒き
るため、温度制御が正確になり、従って、処理加工の反
覆性および均等性が向上できる。更に、熱電対は取外し
自在に設けられることにより、対象の熱電対を複数の炉
′に適用させて用いることが出来る。
As described above, according to the manufacturing furnace of the present invention, a thermocouple is provided between the internal quartz tube and the external quartz tube of the double quartz tube structure so that the thermocouple can be accommodated. The temperature inside the quartz tube furnace can be monitored even during processing. In addition, since the temperature under processing conditions can be measured in real time, temperature control becomes accurate, and therefore, repeatability and uniformity of processing can be improved. Furthermore, since the thermocouple is removably provided, the thermocouple in question can be applied to a plurality of furnaces.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の1実施例による製造炉の構成を説明す
る部分斜視図、第2図は第1図の要部を示す垂直断面図
、第3図は従来の製造炉を説明する図フある。 10・−・拡散炉、 It、12・・・石英製の炉管、
13・・・均熱管、 14・・・電気炉、15・・・熱
電対、16・・・シリコンウェハ、17・・・受台 第1図 1N2図
FIG. 1 is a partial perspective view illustrating the configuration of a manufacturing furnace according to an embodiment of the present invention, FIG. 2 is a vertical sectional view showing the main parts of FIG. 1, and FIG. 3 is a diagram illustrating a conventional manufacturing furnace. There is a fu. 10... Diffusion furnace, It, 12... Quartz furnace tube,
13... Soaking tube, 14... Electric furnace, 15... Thermocouple, 16... Silicon wafer, 17... pedestal Fig. 1 Fig. 1N2

Claims (1)

【特許請求の範囲】[Claims] 中空円筒体から成る石英管を更に中空円筒体の石英管で
囲んだ炉管を囲むように配設されたヒータにより該炉管
を加熱し、炉管内に配置したシリコンウェハを高温処理
する半導体素子の製造炉において、炉管の長手方向に沿
つて内部石英管と外部石英管との間に少なくとも1つ熱
電対を設け、該熱電対により炉内温度が測定されること
を特徴とする半導体素子の製造炉。
A semiconductor element which heats a furnace tube with a heater arranged to surround a furnace tube in which a quartz tube consisting of a hollow cylinder is further surrounded by a quartz tube having a hollow cylinder, and processes a silicon wafer placed in the furnace tube at a high temperature. In the manufacturing furnace, at least one thermocouple is provided between the internal quartz tube and the external quartz tube along the longitudinal direction of the furnace tube, and the temperature inside the furnace is measured by the thermocouple. manufacturing furnace.
JP24756186A 1986-10-20 1986-10-20 Semiconductor element manufacturing furnace Expired - Lifetime JPH0744158B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24756186A JPH0744158B2 (en) 1986-10-20 1986-10-20 Semiconductor element manufacturing furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24756186A JPH0744158B2 (en) 1986-10-20 1986-10-20 Semiconductor element manufacturing furnace

Publications (2)

Publication Number Publication Date
JPS63102224A true JPS63102224A (en) 1988-05-07
JPH0744158B2 JPH0744158B2 (en) 1995-05-15

Family

ID=17165325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24756186A Expired - Lifetime JPH0744158B2 (en) 1986-10-20 1986-10-20 Semiconductor element manufacturing furnace

Country Status (1)

Country Link
JP (1) JPH0744158B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252435U (en) * 1988-10-11 1990-04-16
CN111735893A (en) * 2020-07-01 2020-10-02 中国科学院广州地球化学研究所 Hydrocarbon source rock quartz tube thermal simulation automatic sampling experimental device and experimental method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252435U (en) * 1988-10-11 1990-04-16
CN111735893A (en) * 2020-07-01 2020-10-02 中国科学院广州地球化学研究所 Hydrocarbon source rock quartz tube thermal simulation automatic sampling experimental device and experimental method
CN111735893B (en) * 2020-07-01 2024-10-15 中国科学院广州地球化学研究所 Experimental device and experimental method for thermal simulation and automatic sampling of quartz tube of hydrocarbon source rock

Also Published As

Publication number Publication date
JPH0744158B2 (en) 1995-05-15

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