JPS63102224A - Manufacturing furnace for semiconductor element - Google Patents
Manufacturing furnace for semiconductor elementInfo
- Publication number
- JPS63102224A JPS63102224A JP24756186A JP24756186A JPS63102224A JP S63102224 A JPS63102224 A JP S63102224A JP 24756186 A JP24756186 A JP 24756186A JP 24756186 A JP24756186 A JP 24756186A JP S63102224 A JPS63102224 A JP S63102224A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- tube
- thermocouple
- quartz tube
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010453 quartz Substances 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 12
- 238000002791 soaking Methods 0.000 abstract description 7
- 238000003754 machining Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 7
- 238000011109 contamination Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は集積回路等の半導体素子の製造炉フあって、更
に詳述すれば、シリコン等の半導体に熱処理を施して酸
化または拡散を行う酸化・拡散炉に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a manufacturing furnace for semiconductor devices such as integrated circuits, and more specifically, to heat-treating semiconductors such as silicon to oxidize or diffuse them. Regarding oxidation/diffusion furnaces.
従来より、半導体製造プロセスに於て、酸化または拡散
のために一般的に用いられている炉は、第３図に図示す
る如く構成されている。Conventionally, a furnace commonly used for oxidation or diffusion in semiconductor manufacturing processes is constructed as shown in FIG.
すなわち、この炉は、加工すべき半導体ウエノ・を収容
可能にした石英＆の炉管１と、該炉管１を加熱するため
に囲繞されたヒータ２と、炉管１およびヒータ２との間
に配置されてヒータ２からの汚染を防止すると共に、ヒ
ータ２からの放射熱を均一にする均熱管３とから成って
いる。That is, this furnace consists of a quartz furnace tube 1 capable of accommodating the semiconductor wafer to be processed, a heater 2 surrounding the furnace tube 1, and a space between the furnace tube 1 and the heater 2. It consists of a soaking tube 3 which is placed in the heater 2 to prevent contamination from the heater 2 and to uniformize the radiant heat from the heater 2.
このような炉により、例えば拡散処理は、適当な不純物
としての原子を含むガスを炉管に通過させ、炉温により
ウエノ・表面に行われる。With such a furnace, for example, a diffusion process is carried out on the ueno surface by passing a gas containing atoms as suitable impurities through the furnace tube and at the furnace temperature.
係る製造炉マは、加工される材料の反グ性と均等性は、
炉内の温度安定度と均等性によって得られることが良く
知られている。従って、炉内温度を測定し、制御するこ
と並びに炉内の汚染を防止して均等性を維持することは
重要かつ不可欠フある。In such a manufacturing furnace, the curvature and uniformity of the processed material are
It is well known that temperature stability and uniformity within the furnace are achieved. Therefore, it is important and essential to measure and control the furnace temperature as well as to prevent contamination and maintain uniformity within the furnace.
従来炉では、炉内の汚染を防止して温度制御を行うため
に、熱電対を用いかつ炉管の外側で温度測定を行ってい
た。また、作業処理工程前に炉内温度を別途測定し、こ
の炉内温度をもとに前記外部測定により得られた温度を
補正するようにして、ヒータ電流を制御していた。In conventional furnaces, in order to prevent contamination inside the furnace and control the temperature, a thermocouple was used to measure the temperature outside the furnace tube. Furthermore, the temperature inside the furnace is separately measured before the work processing process, and the temperature obtained by the external measurement is corrected based on this temperature inside the furnace, thereby controlling the heater current.
しかしながら、上述したとおり従来炉では、炉管の外側
で測定して得られた外部温度に相応して炉内温度を制御
していたため、例えば作業状態下でガス流の状態によっ
て左右される温度変化には必ずしも追従〒きていなかっ
た。この点を解決するためには、炉内温度に近似した外
部温度が測定されればよい訳↑あり、そのために、均熱
管を取外すことも考えられるが、しかし、均熱管は汚染
防止上から取外すことができなかった。However, as mentioned above, in conventional furnaces, the temperature inside the furnace was controlled according to the external temperature measured outside the furnace tube. did not necessarily follow suit. In order to solve this problem, it is sufficient to measure the external temperature that is close to the temperature inside the furnace, and for that purpose, it is possible to remove the soaking tube. However, to prevent contamination, the soaking tube should be removed. I couldn't.
本発明の目的は、作業状態下の炉内の温度が実時間で測
定できて、加工される材料の反覆性と均等性が向上でき
る半導体素子の製造炉を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device manufacturing furnace in which the temperature inside the furnace under working conditions can be measured in real time and the repeatability and uniformity of processed materials can be improved.
すなわち、本発明の上記目的は、中空円筒体から成る石
英管を更に中空円筒体の石英管〒囲んだ炉管を囲むよう
に配設されたヒータにより該炉管を加熱し、炉管内に配
置したシリコンウェハを高温処理する半導体素子の製造
炉において、炉管の長手方向に沿って内部石英管と外部
石英管との間に少なくとも１つ熱電対を設け、該熱電対
により炉内温度が測定されることを特徴とする半導体素
子の製造炉により達成される。That is, the above object of the present invention is to heat a quartz tube made of a hollow cylindrical body with a heater arranged so as to surround the quartz tube made of a hollow cylindrical body, and to heat the quartz tube made of a hollow cylindrical body with a heater disposed so as to surround the furnace tube. In a semiconductor device manufacturing furnace that processes silicon wafers at high temperatures, at least one thermocouple is provided between an internal quartz tube and an external quartz tube along the longitudinal direction of the furnace tube, and the temperature inside the furnace is measured by the thermocouple. This is achieved by a semiconductor device manufacturing furnace characterized by:
熱電対は内部石英管と外部石英管との間に納められた状
態で炉内温度を測定するため、シリコンウェハが内部石
英管内に収容された処理作業下マ、炉管内の反応に影響
を与えない。The thermocouple is placed between the inner quartz tube and the outer quartz tube to measure the temperature inside the furnace. do not have.
以下、図面により本発明の詳細な説明する。 Hereinafter, the present invention will be explained in detail with reference to the drawings.
第１図および第２図は本発明の半導体素子の製造炉の１
実施例を図示しており、第２図は第１図に示す炉の要部
断面を示している。なお、本実施例では拡散炉を例示し
て説明する。FIGS. 1 and 2 show one of the manufacturing furnaces for semiconductor devices according to the present invention.
An example is illustrated, and FIG. 2 shows a cross section of a main part of the furnace shown in FIG. 1. Note that this embodiment will be explained using a diffusion furnace as an example.
本発明が適用される２重石英管構造の拡散炉１０は、口
径が異なる２本の中空円筒体の炉管１１゜１２が長手方
向に沿って遊嵌状態に嵌め合わされており、他に前記２
本の炉管１１，１２を内包するよ５Ｖｃ配置された均熱
管１３と、該均熱管１３の外面に配設されたヒータから
成る電気炉１４と、を備えている。前記炉管１１，１２
は石英灸から成っており、内方の炉管１１は拡散が行わ
れるシリコンウェハ１６を内部に収容可能に設けている
。A diffusion furnace 10 having a double quartz tube structure to which the present invention is applied has two hollow cylindrical furnace tubes 11 and 12 having different diameters loosely fitted together along the longitudinal direction. 2
The electric furnace 14 includes a soaking tube 13 arranged at 5 Vc so as to enclose two furnace tubes 11 and 12, and an electric furnace 14 consisting of a heater disposed on the outer surface of the soaking tube 13. The furnace tubes 11 and 12
is made of quartz moxibustion, and the inner furnace tube 11 is provided so as to be able to accommodate therein a silicon wafer 16 on which diffusion is to be performed.
また、内方の炉管１１及び内方の炉管１１と外方の炉管
１２どの間はガス流が供給されるように設けられており
、かつ内方の炉管１１と外方の炉管１２との間には炉管
に沿って少な（とも１つの熱電対が収容可能に設けられ
ている。Further, the inner furnace tube 11 and the space between the inner furnace tube 11 and the outer furnace tube 12 are provided so that a gas flow is supplied thereto, and between the inner furnace tube 11 and the outer furnace tube 12. Along the furnace tube, at least one thermocouple can be accommodated between the tube 12 and the furnace tube.
このよ５に構成された製造炉を用い、シリコンウェハ１
６に外部から不純物を添加する拡散は、シリコンウェハ
１６を石英から成る受台１７に乗せて炉管１１内に収容
させた後、炉管１１の一方から例えばＢ（ホウ素）を供
給し、このＢを含む雰囲気の中〒シリコンウェハ１６を
電気炉１４によって９００Ｃ〜１０００７４加熱して行
う。この際、内部炉ｖ１１と外部炉管１２との間に少な
くとも１つ熱電対１５がセツティングされており、炉管
１１内の拡散温度を実時間で監視フきる。また、炉管内
の複数個所の温度を一度に測定できる。Using the manufacturing furnace configured as shown in 5 above, a silicon wafer 1
In the diffusion of externally adding impurities to 6, the silicon wafer 16 is placed on a pedestal 17 made of quartz and housed in the furnace tube 11, and then, for example, B (boron) is supplied from one side of the furnace tube 11. The silicon wafer 16 is heated to 900 to 100,074 degrees in an electric furnace 14 in an atmosphere containing B. At this time, at least one thermocouple 15 is set between the inner furnace v11 and the outer furnace tube 12, so that the diffusion temperature within the furnace tube 11 can be monitored in real time. Additionally, the temperature at multiple locations within the furnace tube can be measured at once.
熱電対は、被測定温度および使用される雰囲気に適した
ものが選択されることが望ましい。また、熱電対の動作
によりヒータ電流を直接制御するようＶＣ構成すること
も出来る。It is desirable to select a thermocouple that is suitable for the temperature to be measured and the atmosphere in which it will be used. It is also possible to configure a VC so that the heater current is directly controlled by the operation of a thermocouple.
前記実施例フは、ホウ素原子を拡散してｐ形シリコンを
作る場合を述べたが、Ｐｌン）を拡散してｎ形シリコン
を作る場合〒あっても、更にまた、酸化性ガスを供給し
てシリコン酸化膜を形成する酸化炉にも本発明は適用で
きることは当然↑ある。The above embodiment describes the case where p-type silicon is made by diffusing boron atoms, but even if n-type silicon is made by diffusing P1, it is also possible to supply an oxidizing gas. Of course, the present invention can also be applied to an oxidation furnace for forming a silicon oxide film.
以上記載したとおり、本発明の製造炉によれば、２重石
英管構造の内部石英管と外部石英管との間に熱電対を収
容可能に設けたことにより、ウェハな炉内に収容した加
工処理状態でも、石英管炉内の温度を監視マきる。また
、このように加工処理状態下の温度が実時間で測定〒き
るため、温度制御が正確になり、従って、処理加工の反
覆性および均等性が向上できる。更に、熱電対は取外し
自在に設けられることにより、対象の熱電対を複数の炉
′に適用させて用いることが出来る。As described above, according to the manufacturing furnace of the present invention, a thermocouple is provided between the internal quartz tube and the external quartz tube of the double quartz tube structure so that the thermocouple can be accommodated. The temperature inside the quartz tube furnace can be monitored even during processing. In addition, since the temperature under processing conditions can be measured in real time, temperature control becomes accurate, and therefore, repeatability and uniformity of processing can be improved. Furthermore, since the thermocouple is removably provided, the thermocouple in question can be applied to a plurality of furnaces.
第１図は本発明の１実施例による製造炉の構成を説明す
る部分斜視図、第２図は第１図の要部を示す垂直断面図
、第３図は従来の製造炉を説明する図フある。
１０・−・拡散炉、 Ｉｔ、１２・・・石英製の炉管、
１３・・・均熱管、 １４・・・電気炉、１５・・・熱
電対、１６・・・シリコンウェハ、１７・・・受台
第１図
１Ｎ２図FIG. 1 is a partial perspective view illustrating the configuration of a manufacturing furnace according to an embodiment of the present invention, FIG. 2 is a vertical sectional view showing the main parts of FIG. 1, and FIG. 3 is a diagram illustrating a conventional manufacturing furnace. There is a fu. 10... Diffusion furnace, It, 12... Quartz furnace tube,
13... Soaking tube, 14... Electric furnace, 15... Thermocouple, 16... Silicon wafer, 17... pedestal Fig. 1 Fig. 1N2
Claims (1)
囲んだ炉管を囲むように配設されたヒータにより該炉管
を加熱し、炉管内に配置したシリコンウェハを高温処理
する半導体素子の製造炉において、炉管の長手方向に沿
つて内部石英管と外部石英管との間に少なくとも１つ熱
電対を設け、該熱電対により炉内温度が測定されること
を特徴とする半導体素子の製造炉。A semiconductor element which heats a furnace tube with a heater arranged to surround a furnace tube in which a quartz tube consisting of a hollow cylinder is further surrounded by a quartz tube having a hollow cylinder, and processes a silicon wafer placed in the furnace tube at a high temperature. In the manufacturing furnace, at least one thermocouple is provided between the internal quartz tube and the external quartz tube along the longitudinal direction of the furnace tube, and the temperature inside the furnace is measured by the thermocouple. manufacturing furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24756186A JPH0744158B2 (en) | 1986-10-20 | 1986-10-20 | Semiconductor element manufacturing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24756186A JPH0744158B2 (en) | 1986-10-20 | 1986-10-20 | Semiconductor element manufacturing furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63102224A true JPS63102224A (en) | 1988-05-07 |
| JPH0744158B2 JPH0744158B2 (en) | 1995-05-15 |
Family
ID=17165325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24756186A Expired - Lifetime JPH0744158B2 (en) | 1986-10-20 | 1986-10-20 | Semiconductor element manufacturing furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0744158B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0252435U (en) * | 1988-10-11 | 1990-04-16 | ||
| CN111735893A (en) * | 2020-07-01 | 2020-10-02 | 中国科学院广州地球化学研究所 | Hydrocarbon source rock quartz tube thermal simulation automatic sampling experimental device and experimental method |
-
1986
- 1986-10-20 JP JP24756186A patent/JPH0744158B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0252435U (en) * | 1988-10-11 | 1990-04-16 | ||
| CN111735893A (en) * | 2020-07-01 | 2020-10-02 | 中国科学院广州地球化学研究所 | Hydrocarbon source rock quartz tube thermal simulation automatic sampling experimental device and experimental method |
| CN111735893B (en) * | 2020-07-01 | 2024-10-15 | 中国科学院广州地球化学研究所 | Experimental device and experimental method for thermal simulation and automatic sampling of quartz tube of hydrocarbon source rock |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0744158B2 (en) | 1995-05-15 |
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