JPS63100179A - Film forming device - Google Patents

Abstract

PURPOSE:To form a film which is excellent in adhesion and hardly damaged by providing both a high-energy ion source and a low-energy ion source in a vacuum vessel in a film forming device wherein ion beam irradiation is combined with vacuum deposition. CONSTITUTION:Two pieces of evaporation sources 18, 22 incorporated with same-quality evaporation material are provided in a vacuum vessel 2 and also both an ion source 10 generating high-energy ion beams 12 and an ion source 14 generating low-energy ion beams 16 and provided in the opposite positions. A holder 6 fixed with a base plate 4 to be vapor-deposited is rotated in the direction A with a driver 8 so that it is directed toward both the high-energy ion beams 12 and the low-energy ion beams 16 and also the holder 6 itself is rotated in the direction B. Since a vapor-deposited film excellent in adhesion is obtained by both evaporated substance 20 of the evaporation source and the ion beams 12 and the vapor-deposited film little in damage on the surface of the film is obtained by both evaporated substance 24 and the ion beams 16, a vapor-deposited film which is excellent in adhesion and hardly damaged can be formed on the base plate 4 by combination of both ion beams 12, 16.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a film forming apparatus that forms a film on a substrate surface using a combination of ion beam irradiation and vacuum evaporation.

[Conventional technology]

Conventionally, this type of apparatus has been configured with a combination of a single ion source (or a beam line including the ion source) and a single evaporation source.

[Problem that the invention seeks to solve]

However, the lower limit of the energy of the ion beam that can be extracted by a single ion source is at most one order of magnitude lower than the maximum, considering practical considerations.

For example, the lower ffl of the ion beam energy that can be extracted from an ion source with a maximum energy of 40 KeV is 2 to 5
It is about KeV. This is because ions extracted from the plasma are suppressed by the space charge effect at the extraction electrode portion, and as the extraction voltage decreases, the influence of the space charge effect increases, making it difficult to extract the ion beam.

By the way, from the point of view of crystal growth on the substrate, irradiation with an ion beam of high energy (for example, I KeV or more) allows film formation, but leaves a large amount of damage in the film. Therefore, in this case, it is desirable to use an ion beam with low energy (for example, less than I KeV). On the other hand, in order to increase the adhesion between the formed film and the substrate, it is desirable to actively form a mixed layer of both at the boundary between the film and the substrate by irradiation with a high-energy ion beam.

However, these needs cannot be met with a single ion source, as discussed above.

Therefore, an object of the present invention is to provide a film forming apparatus that improves this point.

[Means for solving problems]

The film forming apparatus of the present invention includes a holder that is provided in a vacuum container and can hold a substrate, and a high-energy ion beam that can generate relatively high-energy ion beams that are directed toward the holder from different directions. Install at least one low-energy ion source that can generate an ion beam with low energy relative to the ion source, and change the orientation of the holder so that the surface of the substrate held there is facing the high-energy ion source and the low-energy ion source. a holder driving device having at least a function that can be changed to the ion source side; and one or more evaporation sources, at least one of which is directed toward the substrate surface held by the holder regardless of the change in the orientation of the holder. The invention is characterized by comprising: a.

[Effect]

The orientation of the substrate surface held there by the holder drive device can be changed between a high energy ion source side and a low energy ion source side. Therefore, for example, in order to improve the adhesion between the substrate and the film, it is possible to use a combination of a high-energy ion source and an evaporation source, and to use high-energy ion beam irradiation and vacuum evaporation together, or In order to form a film with less damage, a combination of a low energy ion source and an evaporation source can be used to combine low energy ion beam irradiation and vacuum evaporation. As a result, a film with good adhesion and less damage can be formed on the substrate surface.

〔Example〕

FIG. 1 is a schematic diagram showing a film forming apparatus according to an embodiment of the present invention. A holder 6 capable of holding a substrate 4 is provided in a vacuum container 2 that is evacuated to a predetermined vacuum by a vacuum pump (not shown).

In this example, a high-energy ion beam 12 capable of generating a relatively high-energy ion beam 12 (for example, in the range of IKeV to 50KeV) is placed at a location approximately symmetrical about the center of rotation of the holder 6, as indicated by an arrow A, which will be described later. An ion source 10 and a low energy ion source 14 capable of generating an ion beam 16 with relatively low energy (for example, in the range of about 50 eV to IKeV) are arranged diagonally downward toward the holder 6. There is.

The holder 6 is attached to a holder driving device 8, and the holder driving device 8 rotates the holder 6 in the direction of arrow A to orient the surface of the substrate 4 held thereto toward the high-energy ion source 10. It has a function that can be changed to the low energy ion source 14 side. Furthermore, in this example, the holder driving device 8 also has a function of rotating the holder 6 in the direction of arrow B, for example, and rotating the substrate 4 within its plane. However, this rotation function as indicated by arrow B may not necessarily be necessary if the size of the substrate 4 is small.

Furthermore, in this example, two evaporators are installed below the holder 6 in the vacuum container 2 and are approximately symmetrical with respect to the center of rotation of the holder 6 as indicated by the arrow A. Sources 18 and 22 are respectively arranged, the former towards the surface of the substrate 4 facing the high energy ion source 10 and the latter towards the low energy ion source 14.
They are each oriented towards the surface of the substrate 4 which is oriented to the side.

According to the above-mentioned apparatus, the substrate 4 is formed by using ion beam irradiation and vacuum evaporation in combination, that is, by using both simultaneously or alternately.
When forming a film on the surface of the evaporation source 18, the substrate 4 is turned toward the high-energy ion source 10 in the early stage of film formation to ensure good adhesion between the substrate 4 and the film.
By using the combination of By using a combination of the low energy ion source 14 and the evaporation source 22, irradiation with the low energy ion beam 16 and vacuum evaporation can be used together. In that case, the ion beams 12 and 16 and the evaporated material 2
For example, 0 and 24 are of the same type. As a result of the above, it is possible to form a film on the surface of the substrate 4 with good adhesion and little damage, which was difficult to do with a conventional device using a single ion source.

Furthermore, if two evaporation sources 18,22 are provided as in this example, the ion beam 12 and The incident angle of the evaporated material 20 or the incident angle of the ion beam 16 and the evaporated material f24 is adjusted to improve the uniformity of the film thickness and the like, for example, as disclosed in Japanese Patent Application Laid-open No. 150221/1983. It can be made optimal for reducing the sputtering effect caused by the beam.

It should be noted that instead of or in addition to the function of rotating the holder 6 in the direction of arrow A, the holder driving device 8 is provided with a function of moving the holder 6 in parallel in a predetermined direction, thereby controlling the ion beam or the like against the substrate 4. The incident angle of the evaporated substance may be adjusted.

Also, regardless of the orientation of the holder 6, only one evaporation source may be used as long as it is placed facing the surface of the substrate 4 (and even in that case, if the above three functions of the holder drive device 8 are used together, It is also possible to adjust the incident angle of the ion beam or evaporated material to the above-described optimum angle with respect to the ion beam.

Furthermore, a plurality of high-energy ion sources, low-energy ion sources, and evaporation sources, or all of them, may be provided as required, and in this way, the types and combinations of each ion beam and each evaporation substance can be adjusted. By appropriately selecting a combination of the above, it is possible to form a multilayer film or a ternary or higher film on the substrate 4.

〔Effect of the invention〕

As described above, according to the present invention, a film with good adhesion and little damage can be formed on the surface of a substrate, which was difficult to do with a conventional device using a single ion source.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing a film forming apparatus according to an embodiment of the present invention. 2... Vacuum container, 4... Substrate, 6... Holder, 8
...Holder drive device, 10...High energy ion a, tz, 1s...Ion beam, 14...Low energy ion source, 18.22...Evaporation source, 20.24
...Evaporation substance.

Claims (1)

[Claims] (1) In an apparatus that forms a film on a substrate surface using a combination of ion beam irradiation using an ion source and vacuum evaporation using an evaporation source in a vacuum container, a holder provided in the vacuum container that can hold the substrate and a holder that can hold the substrate and mutually At least one high-energy ion source capable of generating a relatively high-energy ion beam and one low-energy ion source capable of generating a relatively low-energy ion beam directed toward the holder from different directions. , a holder driving device having at least a function of changing the orientation of the holder to change the orientation of the substrate surface held therein between a high-energy ion source side and a low-energy ion source side, and one or more evaporation sources, 1. A film forming apparatus characterized in that at least one of the apparatuses is arranged so as to face the surface of a substrate held by the holder regardless of the orientation of the holder.