JPS6298911A - Input buffer circuit - Google Patents

Input buffer circuit

Info

Publication number
JPS6298911A
JPS6298911A JP60238856A JP23885685A JPS6298911A JP S6298911 A JPS6298911 A JP S6298911A JP 60238856 A JP60238856 A JP 60238856A JP 23885685 A JP23885685 A JP 23885685A JP S6298911 A JPS6298911 A JP S6298911A
Authority
JP
Japan
Prior art keywords
level
circuit
current
potential
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60238856A
Other languages
Japanese (ja)
Inventor
Akira Uematsu
彰 植松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP60238856A priority Critical patent/JPS6298911A/en
Publication of JPS6298911A publication Critical patent/JPS6298911A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/0185Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507Interface arrangements
    • H03K19/018521Interface arrangements of complementary type, e.g. CMOS

Abstract

PURPOSE:To make the entire current of the titled circuit nearly zero when an input signal of a power voltage level or so is given by providing the 1st control circuit controlling a current level of a constant current circuit and the 2nd control circuit inputting an input level signal and controlling the 1st control circuit. CONSTITUTION:When a signal VI1 is at the TTL level, since an effective voltage between a gate and a source of an element P4 is large, no effect is given to a control system comprising elements P3 and N4. When the level of the signal VI1 approaches a level VD1 gradually, since the capability of the element P4 is deteriorated, a current flowing to a control circuit system comprising the elements P3, N4 is suppressed, the potential at a point 5 is increased gradually and the potential difference between the points VD1 and 5 reaches a threshold voltage of the element P2 or below and a current of a constant current circuit comprising the elements P2, N2 and N3 is lost. On the other hand, the gate-source voltage of the element N1 is increased much larger, that is, since the capability of the element N1 is increased gradually, the level of a point Vo1 is drawn to a common potential VS1. Thus, when a power voltage level is given to the input, the current consumption is made nearly zero.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体メモリなどの半導体装置に使用される入
力バッファ回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an input buffer circuit used in a semiconductor device such as a semiconductor memory.

〔発明の概要〕[Summary of the invention]

本発明は、半導体メモリなどの半導体装置に使用される
入力バッファ回路において、検出回路。
The present invention relates to a detection circuit in an input buffer circuit used in a semiconductor device such as a semiconductor memory.

定電流回路、第1と第2の2つの制御回路から成り、電
源電圧が変動しても定電流回路の電流レベルは第1の制
御回路によって一定に抑えられ、入力信号が電源電圧の
時は、第2の制御回路が定電流回路の電流レベルを抑え
ることによって、入力信号が′電源電圧の時は、消費電
流をゼロに、電源電圧が変動しても、ロジックレベルを
一定にしたものである。
It consists of a constant current circuit and two control circuits, a first and a second control circuit.Even if the power supply voltage fluctuates, the current level of the constant current circuit is kept constant by the first control circuit, and when the input signal is the power supply voltage, By suppressing the current level of the constant current circuit by the second control circuit, the current consumption is zero when the input signal is at the power supply voltage, and the logic level is kept constant even if the power supply voltage fluctuates. be.

〔従来の技術〕[Conventional technology]

第2図は従来の入力バッファ回路である。図中でV工1
1は入力信号、VOllは出力信号、VDllは電源電
圧、VSl 1は接地電位、P゛11、PI3.PI3
はPチャンネル型M百Sトランジスタ、N11 、N1
2.N13.、N14はNチャンネル型MO8)ランジ
スタ、11.12゜13.14.15は各節点である。
FIG. 2 shows a conventional input buffer circuit. In the diagram, V-engine 1
1 is an input signal, VOll is an output signal, VDll is a power supply voltage, VSl1 is a ground potential, P'11, PI3. PI3
is a P-channel type M10S transistor, N11, N1
2. N13. , N14 is an N-channel type MO8) transistor, and 11.12°, 13.14.15 are respective nodes.

V工11がT T L (Transistor Tr
ansistorLogic )信号で、低電位側(α
8V)(以下りとする)から高電位側(2,2V)(以
下Hとする)へ変化する場合を例にとって回路系の動き
を説明する。この場合の各節点の電位変化を第5図に示
す。第5図中の各数値は第2図の各数値と対応し、横軸
は時間T1縦軸は電圧VSVD11は電源電圧、vGL
はロジックレベルである。
V engineering 11 is T T L (Transistor Tr
ansistorLogic) signal, the low potential side (α
The operation of the circuit system will be explained by taking as an example the case where the potential changes from 8V) (hereinafter referred to as "H") to a high potential side (2, 2V) (hereinafter referred to as "H"). FIG. 5 shows potential changes at each node in this case. Each numerical value in FIG. 5 corresponds to each numerical value in FIG. 2, the horizontal axis is time T1, the vertical axis is voltage VSVD11 is the power supply voltage, vGL
is at the logic level.

VlllがL時は、検出回路(PllとN11からなる
)のNi1のゲート電位とそのしきい値電圧が近接して
いるため、回路系全体を流れる電流は小さい。
When Vllll is L, the gate potential of Ni1 of the detection circuit (consisting of Pll and N11) and its threshold voltage are close to each other, so the current flowing through the entire circuit system is small.

Pl 2 、N13 、N12からなる定電流回路を流
れる電流も小さく、この回路の電流の源である212の
ドレイン電位14はVDl 1に近い値となる。
The current flowing through the constant current circuit composed of Pl 2 , N13, and N12 is also small, and the drain potential 14 of 212, which is the current source of this circuit, has a value close to VDl 1.

15の電位は回路系を流れる電流が小さいので、はぼN
13のしきい値電圧分14の電位より下ったものとなる
。一方出力端子12の電位は検出回路のPllのゲート
−ソース間電圧が大きいため13とほぼ同じレベルにあ
る。
At potential 15, the current flowing through the circuit system is small, so N
The potential is lower than the potential of 14 by the threshold voltage of 13. On the other hand, the potential of the output terminal 12 is at almost the same level as the potential of the output terminal 13 because the gate-source voltage of Pll of the detection circuit is large.

Pl3とN14からなる制御回路の出力端子15の電位
は、P15のトランジスタ係数βP14とN14のトラ
ンジスタ利得係数βN14との間に1月4)βN14 のような関係が成り立つ形で設定されるので、VDll
に近いレベルに位置する。
The potential of the output terminal 15 of the control circuit consisting of P13 and N14 is set in such a way that a relationship such as βN14 is established between the transistor coefficient βP14 of P15 and the transistor gain coefficient βN14 of N14, so that VDll
located at a level close to

■T11が乙より上がるにつれてNliの電流能力が上
がるため、Pl2のドレイン−ソース間電圧、N15の
ゲート−ソース間電圧は大きくなる、すなわち14.1
3の各電位は徐々に下降して行く形となる。
■As T11 rises from B, the current capacity of Nli increases, so the drain-source voltage of Pl2 and the gate-source voltage of N15 increase, i.e. 14.1
3, each potential gradually decreases.

また12の電位も、Pllのゲート−ソース間電圧が減
る形になるため、徐々に下降して行く形となる。
Further, the potential of 12 also gradually decreases because the gate-source voltage of Pll decreases.

VT11がVGL付近になると、15の電位とVDll
の差値よりPl2のしきい値電圧を引いた値よりVDl
lと14の電位の差値の方が大きくなる、すなわちPl
2が飽和領域(PllとN11とからなる検出回路へ流
れこの電流の値が15の電位によって一意的に決まる形
)となる、また12の減少率も大きなものとなる。
When VT11 becomes near VGL, the potential of 15 and VDll
The value obtained by subtracting the threshold voltage of Pl2 from the difference value of VDl
The difference value between the potentials of l and 14 is larger, that is, Pl
2 is in the saturation region (the value of this current flowing to the detection circuit consisting of Pll and N11 is uniquely determined by the potential of 15), and the reduction rate of 12 is also large.

さらにVT11が大きくなると、回路全体の電流レベル
がまた落ちるため、14.13の電位は再び上昇をはじ
め、Pl2は再び不飽和領域に入る。
When VT11 further increases, the current level of the entire circuit drops again, so the potential at 14.13 begins to rise again, and Pl2 enters the unsaturated region again.

前述のようにPl3とN14のトランジスタ利得係数を
比較した時、Pl3の方がはるかに大きいので電源電圧
が変った時の15の電位の変化量は小さい。
As mentioned above, when comparing the transistor gain coefficients of P13 and N14, P13 is much larger, so the amount of change in the potential of 15 when the power supply voltage changes is small.

VlllがVGL付近でf7)VDllと14電位の差
値は、当然電源電圧の変動によって変れるが、その値が
前述の15の電位とVDllの差値よりも常に大きけれ
ばこの回路のロジックレベルVGLは、電源電圧VD1
1に依存しないということになる。
When Vlll is near VGL, f7) The difference value between VDll and potential 14 naturally changes depending on fluctuations in the power supply voltage, but if the value is always larger than the difference value between potential 15 and VDll described above, the logic level of this circuit is VGL. is the power supply voltage VD1
This means that it does not depend on 1.

また回路が差動系の形で組まれているため、製造上のバ
ラツキや雑音に対しても強い形となっている。
Additionally, since the circuit is built in a differential system, it is resistant to manufacturing variations and noise.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

通常、外部から半導体装置にその半導体装置の選択非選
択状態を制御するチップイネーブル信号として、その半
導体装置の電源電圧レベルと同程度の物が供給された時
、その半導体装置の消費電流はほぼゼロとなる。
Normally, when a semiconductor device is externally supplied with a chip enable signal that controls the selected/unselected state of the semiconductor device and is at the same level as the power supply voltage level of the semiconductor device, the current consumption of the semiconductor device is almost zero. becomes.

チップイネーブル信号の入力バッファ回路としてここで
述べた物を持つ、半導体装置の場合、たとえその半導体
装置の電源電圧レベルと同程度の物が外部からチップイ
ネーブル信号として供給されても、すでにその入力ベツ
ファの制御回路部(第2図で、Pl3とN14からなる
回路)で電流が流れてしまい、ゼロとならないという欠
点を持つ。
In the case of a semiconductor device that has the circuit described here as an input buffer circuit for a chip enable signal, even if a circuit with the same level of power supply voltage as the semiconductor device is supplied as a chip enable signal from the outside, the input buffer circuit is already The disadvantage is that current flows in the control circuit section (the circuit consisting of Pl3 and N14 in FIG. 2) and does not become zero.

本発明は、入力として電源電圧程度のレベルが供給され
た時、回路の消費電流を自動的に落とし10シツクレベ
ルが電源電圧に依存せず、製造バラツキや雑音に対して
も強い入力バッファ回路を得ることを目的としている。
The present invention provides an input buffer circuit that automatically reduces the current consumption of the circuit when a level equivalent to the power supply voltage is supplied as an input.The 10th level does not depend on the power supply voltage and is resistant to manufacturing variations and noise. The purpose is to

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点を解決するために、本発明は第1図に示すよ
うに、従来のPl3とN14からなる制御器のその2素
子間に入力信号をゲート入力としたPチャンネル型MO
3)ランジスタを入れ構成したものである。
In order to solve the above problems, the present invention, as shown in FIG.
3) It consists of a transistor.

〔作用〕[Effect]

上記のように構成された入力バッファ回路(図1に示す
)は、入力信号として電源電圧レベル程度の物が入った
時、T4が、PSとN4からなる制御回路の電流バスを
切るため、回路全体として電流がほぼゼロとなる。
In the input buffer circuit (shown in Figure 1) configured as described above, when an input signal of about the power supply voltage level is input, T4 cuts off the current bus of the control circuit consisting of PS and N4, so the circuit The current as a whole becomes almost zero.

〔実施例〕〔Example〕

本発明の実施例を第1図に示す。図において、Pl、T
2.PS、T4はPチャンネル型MOSトランジスタ、
Nl 、N2.N3.N4はNチャンネル型MOS)ラ
ンジスタ、VT1は入力信号、v′7o1は出力信号、
VDlは電源ii!圧、vslは接地電位、1〜5は各
節点である。
An embodiment of the invention is shown in FIG. In the figure, Pl, T
2. PS, T4 is a P-channel type MOS transistor,
Nl, N2. N3. N4 is an N-channel MOS) transistor, VT1 is an input signal, v'7o1 is an output signal,
VDl is power supply ii! pressure, vsl is the ground potential, and 1 to 5 are each node.

VT1がTTLの場合は、T4のゲート−ソース間有効
電圧が大きいため、PSとN4からなる制御系に影響を
与えない。したがってこの場合の回路系の動きとしては
従来の所で説明した形となる。
When VT1 is TTL, the effective voltage between the gate and source of T4 is large, so it does not affect the control system consisting of PS and N4. Therefore, the operation of the circuit system in this case is as explained in the conventional section.

VT1がVDIに徐々に近づいていつた場合、回路の動
きとしては、T4の能力が落ちてくるため、PSとN4
からなる制御回路系を流れる電流が押えられ、5の電位
は徐々に上昇し、ついにはVDlと5の電位差がT2の
しきい値電圧以下になり、T2 、N2 、IJ3から
なる定電流回路の電流がなくなる、一方N1のゲート−
ソース間電圧はより大きくなるすなわちN1の能力は徐
々に上がりて行くためVτ1は接地電位vs1に引っば
られて行く。
When VT1 gradually approaches VDI, the performance of T4 decreases, so PS and N4
The current flowing through the control circuit system consisting of T2, N2, and IJ3 is suppressed, and the potential of 5 gradually rises until the potential difference between VDl and 5 becomes less than the threshold voltage of T2, and the constant current circuit consisting of T2, N2, and IJ3. The current disappears, while the gate of N1 -
As the source-to-source voltage becomes larger, that is, the capability of N1 gradually increases, Vτ1 is pulled toward the ground potential vs1.

以上説明してきたように、PSとN4の間にゲートを入
力信号V工1としたPチャンネル型M″′6Sトランジ
スタP4を設けることによって、入力に電源電圧レベル
が入ってきた時、回路電流をほぼゼpに押えることがで
きる。
As explained above, by providing a P-channel type M'''6S transistor P4 with its gate connected to the input signal V1 between PS and N4, the circuit current is reduced when the power supply voltage level is applied to the input. It can be reduced to almost zero.

〔発明の効果〕〔Effect of the invention〕

以上説明してきたように、本発明の入力バッファ回路は
、入力に電源電圧レベルが入った時、消費電流がほぼゼ
ロになるという点で効果がある。
As described above, the input buffer circuit of the present invention is effective in that the current consumption becomes almost zero when the power supply voltage level is applied to the input.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による入力バッファ回路図で、Pi 、
T2 、ps 、T4・・・・・・Pチャンネル型MO
9)ランジスタ N1 、N2.N3.N4・・・・・・Nチャンネル型
MOSトランジスタ VT1・・・・・・入力信号 vol・・・・・・出力信号 VDl・・・・・・電源電圧 vsl・・・・・・接地電位 1t 2 + 3 z 4 e 5・・・・・・各節点
第2図は従来の入力バッファ回路図で、Pll、Pl2
.Pl3・・・・・・Pチャンネル型MOS)ランジス
タ N11 、N12.NIB、N14・・・・・・Nチャ
ンネル型M″′6Sトランジスタ VT11・・・・・・入力信号 voll・・・・・・出力信号 VDll・・・・・・電源電圧 YSl 1・・・・・・接地電位 11.12,13,14.15・・・・・・各節点第3
図は、第2図の回路のVT11がLからHに上がってい
った場合の図中の各節点の電位変化を示した動作波形図
で、横軸は時間T1縦軸は電圧■、vDllは電源電圧
、VGLはロジックレベルである。 以  上
FIG. 1 is an input buffer circuit diagram according to the present invention, in which Pi,
T2, ps, T4...P channel type MO
9) Transistors N1, N2. N3. N4... N-channel MOS transistor VT1... Input signal vol... Output signal VDl... Power supply voltage vsl... Ground potential 1t 2 + 3 z 4 e 5... Each node in Figure 2 is a conventional input buffer circuit diagram, with Pll, Pl2
.. Pl3...P channel type MOS) transistors N11, N12. NIB, N14...N-channel type M'''6S transistor VT11...Input signal vol...Output signal VDll...Power supply voltage YSl 1...・・Ground potential 11.12, 13, 14.15・・・・・・Each node 3rd
The figure is an operating waveform diagram showing potential changes at each node in the figure when VT11 of the circuit in Figure 2 rises from L to H. The horizontal axis is time T1, the vertical axis is voltage ■, and vDll is The power supply voltage, VGL, is at a logic level. that's all

Claims (1)

【特許請求の範囲】[Claims] 入力レベル信号を検出する検出回路と、前記検出回路に
定電流を流しこむ定電流回路と、前記定電流回路の電流
レベルを制御する第1の制御回路と、前記入カレベル信
号を入力とし前記第1の制御回路を制御する第2の制御
回路を備えたことを特徴とする入力バッファ回路。
a detection circuit for detecting an input level signal; a constant current circuit for flowing a constant current into the detection circuit; a first control circuit for controlling the current level of the constant current circuit; An input buffer circuit comprising a second control circuit that controls a first control circuit.
JP60238856A 1985-10-25 1985-10-25 Input buffer circuit Pending JPS6298911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60238856A JPS6298911A (en) 1985-10-25 1985-10-25 Input buffer circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60238856A JPS6298911A (en) 1985-10-25 1985-10-25 Input buffer circuit

Publications (1)

Publication Number Publication Date
JPS6298911A true JPS6298911A (en) 1987-05-08

Family

ID=17036276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60238856A Pending JPS6298911A (en) 1985-10-25 1985-10-25 Input buffer circuit

Country Status (1)

Country Link
JP (1) JPS6298911A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0616431A1 (en) * 1993-03-19 1994-09-21 Advanced Micro Devices, Inc. Input buffer utilizing a cascode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0616431A1 (en) * 1993-03-19 1994-09-21 Advanced Micro Devices, Inc. Input buffer utilizing a cascode
US5406139A (en) * 1993-03-19 1995-04-11 Advanced Micro Devices, Inc. Input buffer utilizing a cascode to provide a zero power TTL to CMOS input with high speed switching

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