JPS6297358A - Resin sealed type semiconductor integrated circuit device - Google Patents

Resin sealed type semiconductor integrated circuit device

Info

Publication number
JPS6297358A
JPS6297358A JP60238839A JP23883985A JPS6297358A JP S6297358 A JPS6297358 A JP S6297358A JP 60238839 A JP60238839 A JP 60238839A JP 23883985 A JP23883985 A JP 23883985A JP S6297358 A JPS6297358 A JP S6297358A
Authority
JP
Japan
Prior art keywords
resin
heat sink
distance
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60238839A
Other languages
Japanese (ja)
Inventor
Isamu Yamamoto
勇 山本
Takahiko Iida
隆彦 飯田
Eizo Ito
伊藤　栄三
Yuji Sawamori
沢森　雄治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60238839A priority Critical patent/JPS6297358A/en
Publication of JPS6297358A publication Critical patent/JPS6297358A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To make it possible to perform high speed switching, by making a distance between a specified inner lead and a heat sink, which are surrounded with resin, longer than a distance between another inner load and the heat sink. CONSTITUTION:A distance between a lead 3, which is to become an input and output pin, and a peripheral part 4a of a heat sink 4 is made longer than a distance between the lead 3 and a peripheral part 4b of the heat sink 4. Thus, electrostatic capacitance is made small. Since the distance between the inner lead and the heat sink, which are surrounded with resin, is made longer than the distance between the other inner lead and the heat sink, which are surrounded with said resin, switching of a resin sealed type semiconductor integrated circuit can be performed at a high speed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 木希明は、モールド改良された樹脂封止形半導体集積回
路装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] Kiakiaki relates to a resin-sealed semiconductor integrated circuit device with improved molding.

〔従来の技術〕[Conventional technology]

第３図は従来のモールド樹脂封止形半導体集積回路装置
（以下ＩＣと呼ぶ）の断面図であり、図において、（１
）はＩＣチップ、（２）はＩＣチップを封止する樹脂、
（３）は工Ｃの入出力の端子となるリードであり、その
一部は前記樹脂（２）に包囲される。（４）は前記樹脂
（２）忙一方の表面が榎われ、チップ（１）ヲ載せるヒ
ートシンクであり、ＩＣの熱抵抗を良くする機能がある
。（５）はチップ（１）のパッドとリード（３）　′ｊ
ｆｒ電気的につなぐ金属細線である。FIG. 3 is a cross-sectional view of a conventional molded resin-encapsulated semiconductor integrated circuit device (hereinafter referred to as IC).
) is an IC chip, (2) is a resin that seals the IC chip,
(3) is a lead serving as an input/output terminal of the component C, a part of which is surrounded by the resin (2). (4) is a heat sink on which one surface of the resin (2) is exposed and on which the chip (1) is placed, and has the function of improving the thermal resistance of the IC. (5) is the pad and lead (3) of chip (1) ′j
fr is a thin metal wire that connects electrically.

次に動作について説明する。ＩＣが動作するときにリー
ド（３）とヒートシンク（４）との間の樹脂の誘電率が
低いためＩＣのスイッチングが遅れる。Next, the operation will be explained. When the IC operates, the switching of the IC is delayed due to the low dielectric constant of the resin between the leads (3) and the heat sink (4).

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の樹脂封止形半導体集積回路装置は以上のように構
成されているので、リードとヒートシンク間の樹脂の誘
電率の低いことにより、ＩＣの高速スイッチングに支障
を生じる問題点があった。Since the conventional resin-sealed semiconductor integrated circuit device is constructed as described above, there is a problem in that high-speed switching of the IC is hindered due to the low dielectric constant of the resin between the leads and the heat sink.

この発明は上記のような問題点を解消するためになされ
たもので、高速スイッチングの可能な樹脂封止形半３４
体集積回路装置を得ること全目的とする。This invention was made in order to solve the above-mentioned problems.
The overall purpose is to obtain an integrated circuit device.

〔問題点全解決するための手段〕[Means to solve all problems]

この発明に係る樹脂封止形半導体集積回路装置は、樹脂
に包囲される所定の内部リードとヒートシンク間の距離
を前記樹脂に包囲される他の内部リードと前記ヒートシ
ンク間との距離に比べ長くしたものである。In the resin-sealed semiconductor integrated circuit device according to the present invention, the distance between a predetermined internal lead surrounded by resin and the heat sink is longer than the distance between another internal lead surrounded by the resin and the heat sink. It is something.

〔作用〕[Effect]

この発明における樹脂封止形半導体集積回路装置は、所
定の内部リードとヒートシンクとの距離を他の内部リー
ドとヒートシンク間の距離よシも長くすることにより、
高速スイッチングを可能とする。In the resin-sealed semiconductor integrated circuit device of the present invention, by making the distance between a predetermined internal lead and a heat sink longer than the distance between other internal leads and the heat sink,
Enables high-speed switching.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一実施例ｆｔ第１図、第２図について
説明する。図において、（１）はＩＣチップ、（２）は
樹脂、（３）はリード、（４）はヒートシンクであり、
（４ａ）、（４ｂ）はヒートシンクの周縁部、（５）は
金属細線である。Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 1 and 2. In the figure, (1) is an IC chip, (2) is a resin, (3) is a lead, and (4) is a heat sink.
(4a) and (4b) are the periphery of the heat sink, and (5) is a thin metal wire.

入出力ピンとなるリード（３）とヒートシンク（４）の
周縁部（４ａ）との距離をリード（３）とヒートシンク
（４）の周縁部（４ｂ）との距離よりも長くし、静電容
量を小さくし、ＩＣの高速スイッチングを可能とする０
第２図は本発明の他の実施例を示すものであシ、静電容
量を問題とする入出力ピンとなるリード（３）のヒート
シンク（４）に対応した部分（４ａ）ｋヒートシンク（
４）から除去することによシ、この間の静電容量も小さ
く　Ｌ、ＩＣの高速スイッチングを可能としたものであ
る。The distance between the lead (3) serving as the input/output pin and the periphery (4a) of the heat sink (4) is made longer than the distance between the lead (3) and the periphery (4b) of the heat sink (4) to reduce the capacitance. 0 to enable high-speed switching of ICs.
FIG. 2 shows another embodiment of the present invention, in which parts (4a), k, corresponding to the heat sink (4) of the lead (3), which is an input/output pin where capacitance is an issue, are shown.
By removing the capacitance from 4), the capacitance between them is also small, making high-speed switching of the IC possible.

なお、ヒートシンク（４）の周縁部（４ｂ　）’ｉｉ内
部リード（３）に近ずけているのはこの間の熱抵抗を改
善するためである。The reason why the peripheral edge (4b)'ii of the heat sink (4) is located close to the internal lead (3) is to improve the thermal resistance therebetween.

〔発明の効果〕〔Effect of the invention〕

以上のように１この発明によれば、樹脂に包囲された所
定の内部リードとヒートン／り間の距離を前記樹脂に包
囲された他の内部リードと前記ヒートシンク間との距離
に比べ長くしたので、樹脂封止形半導体集積回路装置の
高速スイッチングが可能となる。As described above, 1. According to the present invention, the distance between a predetermined internal lead surrounded by resin and the heat sink is made longer than the distance between another internal lead surrounded by resin and the heat sink. , high-speed switching of resin-sealed semiconductor integrated circuit devices becomes possible.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの発明の一実施例によるモールド樹脂封止Ｉ
Ｃを示す断面図、第２図はこの発明の他の実施例による
モールド樹脂封土工Ｃを示す断面図、第３図は従来のモ
ールド樹脂封止工Ｃｔ−示す断面図である。 図中（１）はＩＣチップ、（２）はモールド樹脂、（３
）はリード、（４）はヒートン／り、（５）は金属細線
である。 図中、同一符号は同一または相当部分を示す。FIG. 1 shows mold resin sealing I according to an embodiment of the present invention.
2 is a sectional view showing a molded resin sealing Ct according to another embodiment of the present invention, and FIG. 3 is a sectional view showing a conventional molded resin sealing Ct. In the figure, (1) is the IC chip, (2) is the mold resin, and (3) is the IC chip.
) is a lead, (4) is Heaton/Li, and (5) is a thin metal wire. In the drawings, the same reference numerals indicate the same or corresponding parts.

Claims (2)

【特許請求の範囲】[Claims] （１）樹脂封止形半導体集積回路装置において、樹脂に
包囲される所定の内部リードとヒートシンク間の距離を
前記樹脂に包囲される他の内部リードと前記ヒートシン
ク間の距離にくらべ長くしたことを特徴とする樹脂封止
形半導体集積回路装置。(1) In a resin-sealed semiconductor integrated circuit device, the distance between a predetermined internal lead surrounded by resin and the heat sink is made longer than the distance between another internal lead surrounded by the resin and the heat sink. Characteristic resin-sealed semiconductor integrated circuit device. （２）ヒートシンクは内部リードに対応したその一部を
除去したことを特徴とする特許請求の範囲第１項記載の
樹脂封止形半導体集積回路装置。(2) The resin-sealed semiconductor integrated circuit device according to claim 1, wherein a portion of the heat sink corresponding to the internal lead is removed.
JP60238839A 1985-10-23 1985-10-23 Resin sealed type semiconductor integrated circuit device Pending JPS6297358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60238839A JPS6297358A (en) 1985-10-23 1985-10-23 Resin sealed type semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60238839A JPS6297358A (en) 1985-10-23 1985-10-23 Resin sealed type semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6297358A true JPS6297358A (en) 1987-05-06

Family

ID=17036040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60238839A Pending JPS6297358A (en) 1985-10-23 1985-10-23 Resin sealed type semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6297358A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5693984A (en) * 1992-06-03 1997-12-02 Seiko Epson Corporation Semiconductor device having a heat radiator
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
EP0880176A3 (en) * 1997-05-19 1999-01-20 Nec Corporation Semiconductor device having pellet mounted on radiating plate thereof
JP2005048918A (en) * 2003-07-31 2005-02-24 Toyota Motor Corp Tank

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5653891A (en) * 1992-06-03 1997-08-05 Seiko Epson Corporation Method of producing a semiconductor device with a heat sink
US5693984A (en) * 1992-06-03 1997-12-02 Seiko Epson Corporation Semiconductor device having a heat radiator
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5891759A (en) * 1993-12-16 1999-04-06 Seiko Epson Corporation Method of making a multiple heat sink resin sealing type semiconductor device
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
EP0880176A3 (en) * 1997-05-19 1999-01-20 Nec Corporation Semiconductor device having pellet mounted on radiating plate thereof
JP2005048918A (en) * 2003-07-31 2005-02-24 Toyota Motor Corp Tank

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