JPS629726Y2 - - Google Patents

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Publication number
JPS629726Y2
JPS629726Y2 JP1982141944U JP14194482U JPS629726Y2 JP S629726 Y2 JPS629726 Y2 JP S629726Y2 JP 1982141944 U JP1982141944 U JP 1982141944U JP 14194482 U JP14194482 U JP 14194482U JP S629726 Y2 JPS629726 Y2 JP S629726Y2
Authority
JP
Japan
Prior art keywords
sintered
layer
coarse
wafer
adsorbent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982141944U
Other languages
Japanese (ja)
Other versions
JPS5948050U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14194482U priority Critical patent/JPS5948050U/en
Publication of JPS5948050U publication Critical patent/JPS5948050U/en
Application granted granted Critical
Publication of JPS629726Y2 publication Critical patent/JPS629726Y2/ja
Granted legal-status Critical Current

Links

Description

【考案の詳細な説明】 [考案の技術分野] 本考案は、半導体ウエハの表面加工に用いられ
る保持装置に関する。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a holding device used for surface processing of semiconductor wafers.

[考案の技術的背景とその問題点] 一般に、半導体ウエハ(以下、たんにウエハと
記す。)を吸着固定する保持装置は、第1図及び
第2図に示すように、内周側に筒状の収納部1を
穿設した保持本体2を有し、収納部1には例えば
ステンレス、青銅、セラミツクス等の多孔質焼結
体からなる円板状の吸着体3が嵌着されている。
上記収納部1の中心部には真空ポンプ(図示せ
ず)に接続される吸引孔4が穿設されているとと
もに内底面には上記吸引孔4と同心的に複数の環
状溝5…と放射溝6…とが互に連通するように刻
設されている。吸着体3の上面と保持本体2の円
環状の上面7は、面一に設定されているととも
に、吸着体3の上面と保持本体2の底面8とが平
行になるように設定されている。そして、保持本
体2は、アライメントリング9により取付台10
の回転軸と同軸に、取付台10の上面に固定され
るようになつている。ところで、第3図は、第2
図のA部分の拡大断面図を示しているが、この図
が示すようにウエハ11と接触する焼結粒体12
…の表面が同一平面になるように研削加工されて
いる。これら研削加工された焼結粒体12…の形
状は、球体に近いものから、加工前の焼結粒体1
2…の粒径の数分の1以下のものまで種々ある。
このうち、加工前の焼結粒体12…の粒径の数分
の1のものについては、周辺の焼結粒体12…と
の結合が弱くなるとともに焼結粒体12…自体の
剛性も弱くなり、変形、欠損、脱落等の変化が生
じる結果、吸着保持されるウエハにとつて好まし
くない問題を惹起する。すなわち、第4図aは、
焼結粒体12が変形した場合を示し、ウエハと接
触する面より、変形した焼結粒体12の一部が飛
び出し、ウエハに局所的な集中応力がかかり、加
工中にウエハのクラツク、割れ等の損傷を惹き起
すとともに、加工精度も劣化する。また、第4図
bは、焼結粒体12の一部が欠落した場合を示
し、欠落した部分がウエハと吸着体3との間に介
在して、第4図aと同様に、ウエハのクラツク、
割れ等の損傷を惹き起すとともに、加工精度も劣
化する。さらに第4図cは、焼結粒体12が脱落
し、脱落した焼結粒体12が、ウエハと吸着体3
との間に介在することにより、第4図a,bと同
様の問題が生じるとともに、脱落した凹部周辺の
支持が弱くなり他の焼結粒体12…の脱落を誘起
しやすくなる。
[Technical background of the invention and its problems] In general, a holding device for suctioning and fixing a semiconductor wafer (hereinafter simply referred to as a wafer) has a cylinder on the inner circumferential side, as shown in Fig. 1 and Fig. 2. The holding body 2 has a holding body 2 in which a shaped storage part 1 is bored, and a disc-shaped adsorbent body 3 made of a porous sintered body such as stainless steel, bronze, or ceramics is fitted into the storage part 1.
A suction hole 4 connected to a vacuum pump (not shown) is bored in the center of the storage section 1, and a plurality of annular grooves 5 are formed concentrically with the suction hole 4 on the inner bottom surface and radiate out. The grooves 6 are carved so as to communicate with each other. The top surface of the suction body 3 and the annular top surface 7 of the holding body 2 are set to be flush with each other, and the top surface of the suction body 3 and the bottom surface 8 of the holding body 2 are set to be parallel to each other. The holding body 2 is attached to the mounting base 10 by the alignment ring 9.
It is adapted to be fixed to the upper surface of the mounting base 10 coaxially with the rotation axis of the mounting base 10. By the way, Figure 3 shows the second
This is an enlarged cross-sectional view of part A in the figure, and as this figure shows, the sintered particles 12 in contact with the wafer 11
The surfaces of ... are ground so that they are on the same plane. The shapes of these ground sintered granules 12 range from those close to spheres to those of the sintered granules 1 before processing.
There are various kinds of particles, up to a fraction of the particle size of 2.
Among these, for particles that are a fraction of the particle size of the sintered granules 12 before processing, the bond with the surrounding sintered granules 12 becomes weak and the rigidity of the sintered granules 12 itself decreases. As a result, the wafer becomes weak and undergoes changes such as deformation, chipping, and falling off, which causes undesirable problems for the wafers held by suction. That is, FIG. 4a is
This shows a case where the sintered granules 12 are deformed, and a part of the deformed sintered granules 12 jumps out from the surface that contacts the wafer, applying local concentrated stress to the wafer, causing cracks and cracks in the wafer during processing. In addition to causing damage such as this, machining accuracy also deteriorates. Further, FIG. 4b shows a case where a part of the sintered granules 12 is missing, and the missing part is interposed between the wafer and the adsorbent 3, and the wafer is damaged as in FIG. 4a. Kratsk,
This not only causes damage such as cracks, but also degrades processing accuracy. Further, FIG. 4c shows that the sintered granules 12 have fallen off, and the fallen sintered granules 12 are attached to the wafer and the adsorbent 3.
By intervening between the sintered particles 12, problems similar to those shown in FIGS. 4a and 4b occur, and the support around the recessed part where the sintered particles 12 have fallen is weakened, making it easier for other sintered particles 12 to fall off.

[考案の目的] 本考案は、上記事情を勘案してなされたもの
で、吸着体を構成する焼結粒体の減損を防止し
て、ウエハの高精度加工を行うことができる保持
装置を得ることにある。
[Purpose of the invention] The present invention has been made in consideration of the above circumstances, and provides a holding device that can perform high-precision processing of wafers by preventing depletion of the sintered particles constituting the adsorbent. There is a particular thing.

[考案の概要] ウエハと直接接触する焼結粒体として、ウエハ
と接触しない他の焼結粒体の粒径よりも数倍〜数
10倍大きい粒径を有する焼結粒体を用い、かつ上
記大粒径の焼結粒体の中心が吸着面と平行になる
ように配列し、上記吸着面は、大粒径の焼結粒体
を面一に削り取ることにより形成するようにした
ものである。
[Summary of the idea] As a sintered granule that comes into direct contact with the wafer, the grain size is several times larger than that of other sintered granules that do not come into contact with the wafer.
Sintered particles having a particle size 10 times larger are used, and the centers of the large-sized sintered particles are arranged parallel to the adsorption surface, and the adsorption surface is arranged so that the large-sized sintered particles It is formed by cutting the body flush.

[考案の実施例] 以下、本考案を図面を参照して、実施例に基づ
いて詳述する。
[Embodiments of the invention] The present invention will be described in detail below based on embodiments with reference to the drawings.

第5図及び第6図は、それぞれ本実施例の保持
装置の平面図及び軸線を含む断面図を示すもの
で、この保持装置は、内周側のに筒状の収納部1
3を穿設した保持本体14を有し、収納部13に
は、例えばステンレス、青銅、セラミツク等の多
孔質焼結体からなる円板状の吸着体15が嵌設さ
れている。上記収納部1の中心部には真空ポンプ
(図示せず)に接続される吸引孔16が穿設され
ているとともに、内底面には上記吸引孔16と同
心的に複数の環状溝17…と放射溝18…とが互
に連通するように刻設されている。吸着体15の
上面と保持本体14の円環状の上面19が面一に
設定されているとともに、吸着体15の上面と保
持本体14の底面20とが平行になるように設定
されている。そして、保持本体14は、アライメ
ントリング21により取付台22の回転軸と同軸
に、取付台22の上面に固定されるようになつて
いる。ところで、第7図は、第5図のB部分の拡
大図及び第8図は、第6図のC部分の拡大断面図
を示すもので、これらの図からわかるように、吸
着体15は、ウエハに直接接触する多孔質の粗粒
焼結層23と、吸着体15の大部分を占める多孔
質の微粒焼結層24から構成されている。上記粗
粒焼結層23は、粒径が0.05mmないし1mmの焼結
粒体25…が、吸着体15上面に、それらの中心
が吸着体15上面と平行な同一平面上にのるよう
に、互に密接して焼結により一層に形成されたも
のである。そして粗粒焼結層23は、研削によ
り、削り取り量が加工前の粒体の全体積の1/2以
下になるように、面一に加工されている。一方、
微粒焼結層24は、0.01mmないし0.2mmの焼結粒
体からなるもので、粗微焼結層23と微粒焼結層
24は、焼結により強固に結合されている。
5 and 6 respectively show a plan view and a sectional view including the axis of the holding device of this embodiment.
The holding body 14 has a holding body 14 with holes 3 formed therein, and a disk-shaped adsorbent 15 made of a porous sintered body such as stainless steel, bronze, or ceramic is fitted into the storage part 13. A suction hole 16 connected to a vacuum pump (not shown) is bored in the center of the storage section 1, and a plurality of annular grooves 17 are formed concentrically with the suction hole 16 on the inner bottom surface. The radial grooves 18 are carved so as to communicate with each other. The top surface of the suction body 15 and the annular top surface 19 of the holding body 14 are set to be flush with each other, and the top surface of the suction body 15 and the bottom surface 20 of the holding body 14 are set to be parallel to each other. The holding body 14 is fixed to the upper surface of the mount 22 coaxially with the rotation axis of the mount 22 by an alignment ring 21. By the way, FIG. 7 shows an enlarged view of section B in FIG. 5, and FIG. 8 shows an enlarged sectional view of section C in FIG. 6. As can be seen from these figures, the adsorbent 15 is It is composed of a porous coarse-grained sintered layer 23 that is in direct contact with the wafer, and a porous fine-grained sintered layer 24 that occupies most of the adsorbent 15. The coarse-grained sintered layer 23 has sintered particles 25 having a particle size of 0.05 mm to 1 mm on the upper surface of the adsorbent 15 so that their centers lie on the same plane parallel to the upper surface of the adsorbent 15. , are formed in a single layer by sintering in close contact with each other. The coarse grained sintered layer 23 is machined flush by grinding so that the amount of removal is less than 1/2 of the total volume of the grains before processing. on the other hand,
The fine grain sintered layer 24 is made of sintered grains of 0.01 mm to 0.2 mm, and the coarse and fine sintered layer 23 and the fine grain sintered layer 24 are firmly bonded by sintering.

つぎに、本実施例の保持装置の製造方法につい
て説明すると、まず、第9図aに示すように0.01
mmないし0.2mmの粒体を用いて1次焼結を行い円
柱状の微粒焼結層24を形成する。。つぎに、こ
の微粒焼結層24の一方の端面上に、上記焼結粒
体25…を互に接触するように、かつ各焼結粒体
25…の中心が上記一方の端面に平行な同一平面
上にのるように、密に敷きつめ、2次焼結を行い
微粒焼結層24上に粗粒焼結層23を形成する
(第9図b参照)。そして、このようにしてできた
吸着体15を、保持本体14の収納部13中に、
接着又は圧入により嵌合固定する(第9図c参
照)。つぎに、第9図dに示すように、吸着体1
5の吸着面27形成予定側端面を支持体26によ
り支持し、保持本体14の底面28を吸着面27
形成予定側端面に平行になるように研削加工す
る。さらに、第9図eに示すように、保持本体1
4の底面28側の支持体26により支持し、底面
28を基準として、球状の各焼結粒体25…を、
削り取り量が加工前の各焼結粒体25…の全体積
の1/2以下になるように研削加工し、底面28に
平行な吸着面27を形成する(第8図参照)。
Next, the method for manufacturing the holding device of this embodiment will be explained. First, as shown in FIG. 9a, 0.01
Primary sintering is performed using grains of mm to 0.2 mm to form a columnar fine grain sintered layer 24. . Next, the sintered granules 25 are placed on one end surface of the fine sintered layer 24 so that they are in contact with each other, and the center of each sintered granule 25 is the same parallel to the one end surface. The particles are densely laid on a flat surface and subjected to secondary sintering to form a coarse sintered layer 23 on the fine sintered layer 24 (see FIG. 9b). Then, the adsorbent 15 made in this way is placed in the storage part 13 of the holding main body 14.
Fit and fix by adhesion or press-fitting (see Figure 9c). Next, as shown in FIG. 9d, the adsorbent 1
5, the end surface on which the suction surface 27 is to be formed is supported by the support 26, and the bottom surface 28 of the holding body 14 is attached to the suction surface 27.
Grind it so that it is parallel to the end surface of the side to be formed. Furthermore, as shown in FIG. 9e, the holding body 1
Each spherical sintered granule 25 is supported by a support body 26 on the bottom surface 28 side of 4, and with the bottom surface 28 as a reference,
Grinding is performed so that the amount of scraping is less than 1/2 of the total volume of each sintered granule 25 before processing, thereby forming a suction surface 27 parallel to the bottom surface 28 (see FIG. 8).

上記保持装置を用いて、ウエハを真空吸着し、
ラツピング、ポリシング、研削、ダイシング、ホ
ーニング等の諸加工を行う場合、ウエハは、焼結
粒体の大きさ及び形状が一様にそろつた粗粒焼結
層23により支持されるのでランダムに配列され
た微粒焼結層24により直接支持される場合に比
べて第4図a,b,cに示す焼結粒体の脱落、欠
損、変形が生じにくい。これは、粗粒焼結層23
は、この粗粒焼結層23を構成している焼結粒体
25…の形状が一様になるように調整されている
ので、例えば球体の全体積の1/2以下の焼結粒体
がなく、焼結粒体25相互間の結合力が強固にな
るとともに、剛性も高くなつているからである。
したがつて、ウエハの割れ、クラツク等の損傷の
発生を防止できるとともに、加工されたウエハの
平行度、平面度、厚み精度等の加工精度が向上す
る。また、吸着面を形成する焼結粒体の脱落、欠
損、変形が起りにくくなるので、保持装置として
の寿命も向上する。
Using the above holding device, vacuum adsorb the wafer,
When performing various processing such as wrapping, polishing, grinding, dicing, and honing, the wafer is supported by the coarse grain sintered layer 23 in which the size and shape of the sintered grains are uniform, so that the wafer is not arranged randomly. Compared to the case where the sintered particles are directly supported by the fine-grained sintered layer 24, the sintered particles are less likely to fall off, chip, or deform as shown in FIGS. 4a, b, and c. This is the coarse grain sintered layer 23
is adjusted so that the shape of the sintered particles 25 constituting this coarse-grained sintered layer 23 is uniform, so for example, the sintered particles 25 having a size of 1/2 or less of the total volume of the sphere This is because the bonding force between the sintered particles 25 is strong and the rigidity is also high.
Therefore, damage such as cracks and cracks on the wafer can be prevented from occurring, and processing accuracy such as parallelism, flatness, and thickness accuracy of the processed wafer can be improved. Furthermore, since the sintered particles forming the suction surface are less likely to fall off, break, or deform, the life of the holding device is also improved.

なお、微粒焼結層24の粒度は、上記実施例に
おいては、0.01mmないし0.2mmとしているが、状
況に応じて適宜増減してよい。
In addition, although the particle size of the fine grain sintered layer 24 is set to 0.01 mm to 0.2 mm in the above embodiment, it may be increased or decreased as appropriate depending on the situation.

[考案の効果] 本考案の保持装置は、多孔質の焼結粒体からな
る吸着体層をウエハを直接支持する粗粒焼結層と
この粗粒焼結層より焼結粒体の粒径が小さい微粒
焼結層とから構成したもので、ウエハと直接接触
する焼結粒体の形状及び大きさの制御を確実に行
うことができるので、焼結粒体の脱落、欠損、変
形が起りにくくなる。その結果、ウエハの焼結粒
体による損焼がなくなり、ウエハの加工精度が向
上する。また、保持装置としての寿命が長くな
る。
[Effects of the invention] The holding device of the invention has an adsorbent layer made of porous sintered particles, a coarse sintered layer that directly supports the wafer, and a coarse sintered layer that supports the sintered particles in terms of particle size. It is composed of a fine sintered layer with small particles, and the shape and size of the sintered particles that come into direct contact with the wafer can be reliably controlled, so there is no possibility of the sintered particles falling off, chipping, or deforming. It becomes difficult. As a result, damage caused by sintered granules on the wafer is eliminated, and the processing accuracy of the wafer is improved. Furthermore, the life of the holding device is extended.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の保持装置の平面図、第2図は第
1図のM−M′線断面図、第3図は第2図のA部
分拡大図、第4図a,b,cは焼結粒体の欠損態
様を示す説明図、第5図は本考案の一実施例の保
持装置の平面図、第6図は第5図のN−N′線断
面図、第7図は第5図のB部分拡大図、第8図は
第6図のC部分拡大図、第9図a,b,c,d,
eは第5図及び第6図に示す保持装置の製造方法
を示す説明図である。 14……保持本体、15……吸着体、23……
粗粒焼結層、26……吸着面。
Fig. 1 is a plan view of a conventional holding device, Fig. 2 is a sectional view taken along line M-M' in Fig. 1, Fig. 3 is an enlarged view of part A in Fig. 2, and Fig. 4 a, b, and c are 5 is a plan view of a holding device according to an embodiment of the present invention, FIG. 6 is a sectional view taken along line N-N' in FIG. 5, and FIG. Figure 5 is an enlarged view of part B of Figure 5, Figure 8 is an enlarged view of part C of Figure 6, Figure 9 a, b, c, d,
FIG. 5e is an explanatory diagram showing a method of manufacturing the holding device shown in FIGS. 5 and 6. FIG. 14... Holding body, 15... Adsorption body, 23...
Coarse grain sintered layer, 26...adsorption surface.

Claims (1)

【実用新案登録請求の範囲】 (1) 多孔質の焼結粒体からなり被加工物を真空吸
着する吸着体と、この吸着体を嵌合保持する保
持本体とを具備し、上記吸着体は、上記被加工
物を吸着支持する吸着面が形成された単層の粗
粒焼結層と、上記粗粒焼結層を構成している焼
結粒体よりも粒径が小さい焼結粒体からなり上
記粗粒焼結層を支持固定する微粒焼結層とから
なることを特徴とする保持装置。 (2) 粗粒焼結層を構成している焼結粒体の吸着面
形成のための削り取り量は加工前の焼結粒体の
全体積の1/2以下であることを特徴とする実用
新案登録請求の範囲第1項記載の保持装置。
[Claims for Utility Model Registration] (1) An adsorbent made of porous sintered particles that vacuum-adsorbs a workpiece, and a holding body that fits and holds the adsorbent, the adsorbent being , a single-layer coarse-grain sintered layer on which an adsorption surface for adsorbing and supporting the workpiece is formed, and sintered granules having a smaller grain size than the sintered granules constituting the coarse-grain sintered layer. and a fine grain sintered layer supporting and fixing the coarse grain sintered layer. (2) Practical use characterized in that the amount of scraping of the sintered granules constituting the coarse sintered layer to form an adsorption surface is less than 1/2 of the total volume of the sintered granules before processing. A holding device according to claim 1 of the patent registration claim.
JP14194482U 1982-09-21 1982-09-21 holding device Granted JPS5948050U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14194482U JPS5948050U (en) 1982-09-21 1982-09-21 holding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14194482U JPS5948050U (en) 1982-09-21 1982-09-21 holding device

Publications (2)

Publication Number Publication Date
JPS5948050U JPS5948050U (en) 1984-03-30
JPS629726Y2 true JPS629726Y2 (en) 1987-03-06

Family

ID=30317312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14194482U Granted JPS5948050U (en) 1982-09-21 1982-09-21 holding device

Country Status (1)

Country Link
JP (1) JPS5948050U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651354B2 (en) * 1994-08-01 1997-09-10 シーケーディ株式会社 Vacuum chuck suction plate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143036A (en) * 1979-04-19 1980-11-08 Toshiba Corp Holder for semiconductor wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143036A (en) * 1979-04-19 1980-11-08 Toshiba Corp Holder for semiconductor wafer

Also Published As

Publication number Publication date
JPS5948050U (en) 1984-03-30

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