JPH06302569A - Polishing method for wafer - Google Patents
Polishing method for waferInfo
- Publication number
- JPH06302569A JPH06302569A JP11114593A JP11114593A JPH06302569A JP H06302569 A JPH06302569 A JP H06302569A JP 11114593 A JP11114593 A JP 11114593A JP 11114593 A JP11114593 A JP 11114593A JP H06302569 A JPH06302569 A JP H06302569A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- frame
- polishing
- held
- attracted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ウェーハの研磨方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer polishing method.
【0002】[0002]
【従来の技術】従来、半導体ウェーハにパターンを形成
した後ウェーハ裏面を研磨する場合、ウェーハに形成さ
れたパターンを保護するために粘着テープが貼られてい
る。この粘着テープはウェーハに貼ってからそのウェー
ハに合わせて同じ大きさにカットされている。研磨終了
後には、ウェーハは粘着テープを剥がして次の洗浄工程
やダイシング工程等へ搬送される。2. Description of the Related Art Conventionally, when a back surface of a wafer is polished after forming a pattern on a semiconductor wafer, an adhesive tape is attached to protect the pattern formed on the wafer. This adhesive tape is attached to a wafer and then cut to the same size as the wafer. After the polishing is completed, the wafer is peeled off the adhesive tape and transported to the next cleaning step or dicing step.
【0003】[0003]
【発明が解決しようとする課題】近年ウェーハの径は大
きくなる傾向にあり、その大きな径のウェーハを上記従
来の研磨方法により処理すると、研磨後に薄くなったウ
ェーハが破損し易くなり、研磨後次工程への搬送が困難
になる。そこで、本発明は、研磨後に薄くなった大きな
径のウェーハであっても、次工程への搬送時に破損しな
いように配慮したウェーハの研磨方法を提供することを
課題としたものである。In recent years, the diameter of wafers tends to increase, and when a wafer having a large diameter is processed by the above-described conventional polishing method, a wafer thinned after polishing is likely to be damaged. Transport to the process becomes difficult. Therefore, it is an object of the present invention to provide a method for polishing a wafer, which is designed so as not to be damaged during the transportation to the next process even if the wafer has a large diameter and is thinned after polishing.
【0004】[0004]
【課題を解決するための手段】この課題を技術的に解決
するための手段として、本発明は、ウェーハを粘着テー
プを介してフレームに保持する工程と、フレームに保持
されたウェーハを研磨装置のチャックテーブルに載置す
る工程と、このウェーハを研磨する工程と、研磨後のウ
ェーハをフレームを介して次工程に搬送する工程と、か
らなるウェーハの研磨方法を要旨とするものである。As a means for technically solving this problem, the present invention provides a step of holding a wafer in a frame via an adhesive tape, and a method of polishing a wafer held in a frame by a polishing apparatus. The gist of the present invention is a method of polishing a wafer, which includes a step of placing the wafer on a chuck table, a step of polishing the wafer, and a step of transporting the polished wafer to the next step through a frame.
【0005】[0005]
【作 用】ウェーハは粘着テープを介してフレームに保
持し、研磨後もそのフレームに保持された状態のまま搬
送されるので、研磨後に薄くなった大径のウェーハであ
っても破損を未然に防止することが出来る。[Operation] Wafers are held in a frame via adhesive tape and transported while being held in that frame even after polishing, so even large-diameter wafers thinned after polishing will not be damaged. It can be prevented.
【0006】[0006]
【実施例】以下、本発明の実施例を添付図面に基づいて
詳説する。図1において、1はほぼリング状のフレーム
であり、その中央部に粘着テープ2を介してウェーハ3
を保持してある。このフレーム1に対する保持工程の後
に、ウェーハ3は研磨装置4のチャックテーブル5に載
置する工程がなされる。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. In FIG. 1, reference numeral 1 is a substantially ring-shaped frame, and a wafer 3 is attached to the center of the frame with an adhesive tape 2 interposed.
Is held. After the step of holding the frame 1, the wafer 3 is placed on the chuck table 5 of the polishing apparatus 4.
【0007】前記チャックテーブル5の上面には、連通
部5aが形成されると共に多孔質材で形成された載置テ
ーブル6が装着され、この載置テーブル6は中央部6a
が周辺部6bよりやや高く形成されその間は緩やかな傾
斜面6cとなっている。又、チャックテーブル5内には
吸引孔7が形成され、この吸引孔7は前記連通部5aに
連通しており、吸引作用によって前記載置テーブル6上
にウェーハ3を保持できるようにしてある。A communication table 5a is formed on the upper surface of the chuck table 5, and a mounting table 6 made of a porous material is mounted on the upper surface of the chuck table 5. The mounting table 6 has a central portion 6a.
Is slightly higher than the peripheral portion 6b, and a gentle slope 6c is formed between them. Further, a suction hole 7 is formed in the chuck table 5, and the suction hole 7 communicates with the communication portion 5a so that the wafer 3 can be held on the placing table 6 by a suction action.
【0008】チャックテーブル5への載置工程がなされ
ると、ウェーハ3は載置テーブル6の中央部6aに吸着
され、フレーム1は一段下がった周辺部6bに吸着さ
れ、粘着テープ2は載置テーブル6の上面形状にぴった
り沿うようにして吸着される。従って、ウェーハ3は下
から少々突き上げられたような状態で保持されることに
なる。When the step of placing the wafer on the chuck table 5 is performed, the wafer 3 is attracted to the central portion 6a of the placing table 6, the frame 1 is attracted to the lowered peripheral portion 6b, and the adhesive tape 2 is placed. It is adsorbed so as to follow the shape of the upper surface of the table 6 exactly. Therefore, the wafer 3 is held in a state of being slightly pushed up from below.
【0009】この場合、チャックテーブル5の上面全体
が粘着テープ2で覆われるため、ウェーハ3の径が変わ
ってもフレーム1の径が同一であればチャックテーブル
5を交換しなくても良く、又ユニバーサルチャックにし
なくても良い。In this case, since the entire upper surface of the chuck table 5 is covered with the adhesive tape 2, it is not necessary to replace the chuck table 5 if the diameter of the wafer 3 is the same and the frame 1 has the same diameter. It does not have to be a universal chuck.
【0010】8は研磨装置4における研磨砥石であり、
スピンドル9の下端部に回転可能に取り付けられ、前記
ウェーハ3を適圧で押圧しながら研磨工程が遂行され
る。前記のようにウェーハ3は周囲のフレーム1より一
段高い位置に保持されているので、研磨砥石8により確
実に研磨することが出来、且つフレーム1との接触も避
けることが出来る。Reference numeral 8 denotes a polishing grindstone in the polishing device 4,
It is rotatably attached to the lower end of the spindle 9, and a polishing process is performed while pressing the wafer 3 with an appropriate pressure. Since the wafer 3 is held at a position one step higher than the surrounding frame 1 as described above, it can be reliably polished by the polishing grindstone 8 and contact with the frame 1 can be avoided.
【0011】10は搬送手段であり、図2に示すように
複数個の吸着パット10aを有しこの吸着パット10a
で前記フレーム1を吸着することにより研磨後のウェー
ハ3を次工程に搬送する工程がなされる。ウェーハ3は
フレーム1に保持された状態で搬送されるため、研磨後
に薄くなった大径のウェーハであっても損傷することな
く安定良く搬送することが出来る。Reference numeral 10 denotes a conveying means, which has a plurality of suction pads 10a as shown in FIG.
Then, a step of transporting the wafer 3 after polishing to the next step by adsorbing the frame 1 is performed. Since the wafer 3 is transported while being held by the frame 1, even a large-diameter wafer thinned after polishing can be stably transported without damage.
【0012】尚、チャックテーブルの載置テーブルは多
孔質セラミックス、複数の細孔が形成された金属等で形
成されるのが一般的であるが、かかる材質のものは比較
的硬度が高く、研磨砥石の押圧力によって研磨される際
ウェーハにダメージを与える場合がある。従って、必ず
しも限定されるものではないが載置テーブルを、又はそ
の上面を多孔質のプラスチックで構成すると緩衝作用が
生じ、ウェーハにダメージを与えることがなくて好まし
い。この多孔質のプラスチックとしては、研磨液等によ
って形状変化することのないフッ素樹脂系の焼結体が好
ましい。又、ポーラス径が30〜60μm、気孔率が4
0〜50%位で多孔質のプラスチックを形成し、載置テ
ーブルを構成すると良好なチャックテーブルを得ること
が出来る。このチャックテーブルはウェーハの載置面を
傷付けることがないので、本発明と異なりフレームを必
要としないウェーハにおいては、従来必要であった載置
面を保護する為のテープが不要となり、テープの無駄を
なくすことが出来ると共にテープの貼付作業、剥離作業
をなくすことが出来る。The mounting table of the chuck table is generally made of porous ceramics, metal having a plurality of pores formed therein, and such a material has a relatively high hardness and is polished. The wafer may be damaged when being polished by the pressing force of the grindstone. Therefore, although not necessarily limited, it is preferable that the mounting table or the upper surface of the mounting table is made of porous plastic because a cushioning action occurs and the wafer is not damaged. As the porous plastic, a fluororesin-based sintered body that does not change its shape by a polishing liquid or the like is preferable. Also, the porous diameter is 30 to 60 μm and the porosity is 4
A favorable chuck table can be obtained by forming porous plastic in the range of 0 to 50% and configuring the mounting table. Since this chuck table does not damage the mounting surface of the wafer, a tape for protecting the mounting surface, which is conventionally necessary, is not required in the wafer that does not require a frame unlike the present invention, and the tape is not wasted. It is possible to eliminate the tape attaching work and peeling work.
【0013】[0013]
【発明の効果】以上説明したように、本発明によれば、
ウェーハは粘着テープを介してフレームに保持し、研磨
後もそのフレームに保持された状態のまま搬送するよう
にしたので、研磨後に薄くなった大径のウェーハであっ
ても次工程への搬送時に破損することはなく、又ウェー
ハの径が変わってもフレームの径が同一であればチャッ
クテーブルを交換しなくても良く、更にユニバーサルチ
ャックにしなくても良い等の優れた効果を奏する。As described above, according to the present invention,
The wafer is held on the frame via the adhesive tape and is transported while being held on the frame even after polishing, so even if the wafer has a large diameter thinned after polishing, it will be transported to the next process. It is not damaged, and even if the diameter of the wafer changes, if the diameter of the frame is the same, the chuck table does not need to be replaced, and the universal chuck need not be used.
【図面の簡単な説明】[Brief description of drawings]
【図1】 本発明によるウェーハ研磨方法の一実施例を
示す説明図である。FIG. 1 is an explanatory view showing an embodiment of a wafer polishing method according to the present invention.
【図2】 研磨後にウェーハを搬送する状態を示す説明
図である。FIG. 2 is an explanatory diagram showing a state in which a wafer is transported after polishing.
1…フレーム 2…粘着テープ 3…ウェーハ
4…研磨装置 5…チャックテーブル 5a…連通
部 6…載置テーブル 6a…中央部 6b…周辺部 6c…傾斜面 7…吸引孔 8…
研磨砥石 9…スピンドル 10…搬送手段 1
0a…吸着パット1 ... Frame 2 ... Adhesive tape 3 ... Wafer
4 ... Polishing device 5 ... Chuck table 5a ... Communication part 6 ... Loading table 6a ... Central part 6b ... Peripheral part 6c ... Sloping surface 7 ... Suction hole 8 ...
Grinding wheel 9 ... Spindle 10 ... Conveying means 1
0a ... Suction pad
Claims (1)
に保持する工程と、フレームに保持されたウェーハを研
磨装置のチャックテーブルに載置する工程と、このウェ
ーハを研磨する工程と、研磨後のウェーハをフレームを
介して次工程に搬送する工程と、からなるウェーハの研
磨方法。1. A step of holding a wafer on a frame via an adhesive tape, a step of placing the wafer held on the frame on a chuck table of a polishing apparatus, a step of polishing this wafer, and a wafer after polishing. And a step of transporting the wafer to the next step via a frame.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11114593A JP3325650B2 (en) | 1993-04-15 | 1993-04-15 | Wafer polishing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11114593A JP3325650B2 (en) | 1993-04-15 | 1993-04-15 | Wafer polishing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06302569A true JPH06302569A (en) | 1994-10-28 |
JP3325650B2 JP3325650B2 (en) | 2002-09-17 |
Family
ID=14553602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11114593A Expired - Lifetime JP3325650B2 (en) | 1993-04-15 | 1993-04-15 | Wafer polishing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3325650B2 (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004014608A1 (en) * | 2002-07-31 | 2004-02-19 | Asahi Glass Company, Limited | Method and device for polishing substrate |
US6866564B2 (en) * | 2000-09-27 | 2005-03-15 | Strasbaugh | Method of backgrinding wafers while leaving backgrinding tape on a chuck |
US7406759B2 (en) | 2003-09-30 | 2008-08-05 | Nitto Denko Corporation | Releasing method and releasing apparatus of work having adhesive tape |
US7452752B2 (en) | 2003-11-27 | 2008-11-18 | 3M Innovative Properties Company | Production method of semiconductor chip |
US7534498B2 (en) | 2002-06-03 | 2009-05-19 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
US7614848B2 (en) | 2006-10-10 | 2009-11-10 | United Technologies Corporation | Fan exit guide vane repair method and apparatus |
US7759050B2 (en) | 2006-07-14 | 2010-07-20 | 3M Innovative Properties Company | Method for manufacturing thin substrate using a laminate body |
JP2011044474A (en) * | 2009-08-19 | 2011-03-03 | Disco Abrasive Syst Ltd | Grinding device for wafer |
JP2011125988A (en) * | 2009-12-21 | 2011-06-30 | Disco Abrasive Syst Ltd | Grinding device |
US8038839B2 (en) | 2002-06-03 | 2011-10-18 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
JP2013086232A (en) * | 2011-10-20 | 2013-05-13 | Murata Mfg Co Ltd | Grinding device and grinding method |
WO2013142054A1 (en) | 2012-03-20 | 2013-09-26 | 3M Innovative Properties Company | Laminate body, method, and materials for temporary substrate support and support separation |
US9184083B2 (en) | 2013-07-29 | 2015-11-10 | 3M Innovative Properties Company | Apparatus, hybrid laminated body, method and materials for temporary substrate support |
JP2019147203A (en) * | 2018-02-26 | 2019-09-05 | 株式会社ディスコ | Frame for package substrate and method for grinding package substrate |
KR20200115487A (en) | 2018-02-07 | 2020-10-07 | 린텍 가부시키가이샤 | Adhesive tape for semiconductor processing |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6358879B2 (en) * | 2014-07-16 | 2018-07-18 | 株式会社ディスコ | Workpiece holding unit |
-
1993
- 1993-04-15 JP JP11114593A patent/JP3325650B2/en not_active Expired - Lifetime
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6866564B2 (en) * | 2000-09-27 | 2005-03-15 | Strasbaugh | Method of backgrinding wafers while leaving backgrinding tape on a chuck |
US7534498B2 (en) | 2002-06-03 | 2009-05-19 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
US8800631B2 (en) | 2002-06-03 | 2014-08-12 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
US8789569B2 (en) | 2002-06-03 | 2014-07-29 | 3M Innovative Properties Company | Apparatus for manufacturing ultrathin substrate using a laminate body |
US8038839B2 (en) | 2002-06-03 | 2011-10-18 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
US7988807B2 (en) | 2002-06-03 | 2011-08-02 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
US7210982B2 (en) | 2002-07-31 | 2007-05-01 | Asahi Glass Company, Limited | Method and apparatus for polishing a substrate |
WO2004014608A1 (en) * | 2002-07-31 | 2004-02-19 | Asahi Glass Company, Limited | Method and device for polishing substrate |
US7115022B2 (en) | 2002-07-31 | 2006-10-03 | Asahi Glass Company, Limited | Method and apparatus for polishing a substrate |
US7987888B2 (en) | 2003-09-30 | 2011-08-02 | Nitto Denko Corporation | Releasing method and releasing apparatus of work having adhesive tape |
US7406759B2 (en) | 2003-09-30 | 2008-08-05 | Nitto Denko Corporation | Releasing method and releasing apparatus of work having adhesive tape |
US7452752B2 (en) | 2003-11-27 | 2008-11-18 | 3M Innovative Properties Company | Production method of semiconductor chip |
US7759050B2 (en) | 2006-07-14 | 2010-07-20 | 3M Innovative Properties Company | Method for manufacturing thin substrate using a laminate body |
US7614848B2 (en) | 2006-10-10 | 2009-11-10 | United Technologies Corporation | Fan exit guide vane repair method and apparatus |
JP2011044474A (en) * | 2009-08-19 | 2011-03-03 | Disco Abrasive Syst Ltd | Grinding device for wafer |
JP2011125988A (en) * | 2009-12-21 | 2011-06-30 | Disco Abrasive Syst Ltd | Grinding device |
JP2013086232A (en) * | 2011-10-20 | 2013-05-13 | Murata Mfg Co Ltd | Grinding device and grinding method |
WO2013142054A1 (en) | 2012-03-20 | 2013-09-26 | 3M Innovative Properties Company | Laminate body, method, and materials for temporary substrate support and support separation |
US9184083B2 (en) | 2013-07-29 | 2015-11-10 | 3M Innovative Properties Company | Apparatus, hybrid laminated body, method and materials for temporary substrate support |
KR20200115487A (en) | 2018-02-07 | 2020-10-07 | 린텍 가부시키가이샤 | Adhesive tape for semiconductor processing |
JP2019147203A (en) * | 2018-02-26 | 2019-09-05 | 株式会社ディスコ | Frame for package substrate and method for grinding package substrate |
Also Published As
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