JPH06302569A - Polishing method for wafer - Google Patents

Polishing method for wafer

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Publication number
JPH06302569A
JPH06302569A JP11114593A JP11114593A JPH06302569A JP H06302569 A JPH06302569 A JP H06302569A JP 11114593 A JP11114593 A JP 11114593A JP 11114593 A JP11114593 A JP 11114593A JP H06302569 A JPH06302569 A JP H06302569A
Authority
JP
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Application
Patent type
Prior art keywords
wafer
frame
polishing
step
table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11114593A
Other languages
Japanese (ja)
Other versions
JP3325650B2 (en )
Inventor
Yutaka Koma
豊 狛
Original Assignee
Disco Abrasive Syst Ltd
株式会社ディスコ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Abstract

PURPOSE: To easily convey to a next step after polishing by holding a wafer in a frame through an adhesive tape, mounting the wafer held in the frame on a chucking table of a polishing apparatus, and conveying the polished wafer to a next step through the frame.
CONSTITUTION: A wafer 3 is held on a mount table 6. When the step of mounting on a chucking table 5 is conducted, the wafer 3 is attracted to the center 6a of the table 6. A frame l is attracted to a periphery 6b lowered by one step, and an adhesive tape 2 is so attracted as to be disposed snugly along an upper surface shape of the table 6. A polishing step is performed while pressing the wafer 3 under a suitable pressure. Then, the frame 1 is attracted by an attraction pad to conduct the step of conveying the polished wafer 3 to a next step. Since the wafer 3 is conveyed in a state held by the frame 1, even a large-diameter wafer reduced in thickness after the polishing is not damaged.
COPYRIGHT: (C)1994,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、ウェーハの研磨方法に関するものである。 The present invention relates to relates to a method of polishing a wafer.

【0002】 [0002]

【従来の技術】従来、半導体ウェーハにパターンを形成した後ウェーハ裏面を研磨する場合、ウェーハに形成されたパターンを保護するために粘着テープが貼られている。 Conventionally, when polishing the wafer back surface after forming a pattern on a semiconductor wafer, an adhesive tape in order to protect the pattern formed on the wafer is stuck. この粘着テープはウェーハに貼ってからそのウェーハに合わせて同じ大きさにカットされている。 The adhesive tape is cut to the same size to fit the wafers from the stuck on the wafer. 研磨終了後には、ウェーハは粘着テープを剥がして次の洗浄工程やダイシング工程等へ搬送される。 After completion of polishing, the wafer is conveyed by peeling an adhesive tape to the next washing step and dicing step or the like.

【0003】 [0003]

【発明が解決しようとする課題】近年ウェーハの径は大きくなる傾向にあり、その大きな径のウェーハを上記従来の研磨方法により処理すると、研磨後に薄くなったウェーハが破損し易くなり、研磨後次工程への搬送が困難になる。 Located INVENTION Problems to be Solved diameter recent wafer tends to increase, when processing wafers of larger diameter by the conventional polishing method, thinned wafer after polishing is easily broken, polished after the next transport to the process becomes difficult. そこで、本発明は、研磨後に薄くなった大きな径のウェーハであっても、次工程への搬送時に破損しないように配慮したウェーハの研磨方法を提供することを課題としたものである。 Accordingly, the present invention may be a wafer of large diameter thinned after polishing, in which an object to provide a method of polishing a wafer with consideration not to damage during transport to the next step.

【0004】 [0004]

【課題を解決するための手段】この課題を技術的に解決するための手段として、本発明は、ウェーハを粘着テープを介してフレームに保持する工程と、フレームに保持されたウェーハを研磨装置のチャックテーブルに載置する工程と、このウェーハを研磨する工程と、研磨後のウェーハをフレームを介して次工程に搬送する工程と、からなるウェーハの研磨方法を要旨とするものである。 As a means for the Means for Solving the Problems] This object technically solved, the present invention includes the step of holding the wafer to the frame through the adhesive tape, the wafer of a polishing apparatus which is held in the frame a step of placing on the chuck table, and a step of polishing the wafer, the wafer after polishing through the frame in which the subject matter comprising the steps of conveying to the next step, a wafer polishing method comprising a.

【0005】 [0005]

【作 用】ウェーハは粘着テープを介してフレームに保持し、研磨後もそのフレームに保持された状態のまま搬送されるので、研磨後に薄くなった大径のウェーハであっても破損を未然に防止することが出来る。 [Created for Wafer is held in the frame through the adhesive tape, since after polishing is also conveyed in the state held in the frame, the breakage even wafers having a large diameter thinned after polishing in advance it is possible to prevent.

【0006】 [0006]

【実施例】以下、本発明の実施例を添付図面に基づいて詳説する。 EXAMPLES The following will be described in detail based on the embodiment of the present invention in the accompanying drawings. 図1において、1はほぼリング状のフレームであり、その中央部に粘着テープ2を介してウェーハ3 In Figure 1, 1 is a substantially ring-shaped frame, the wafer 3 through the adhesive tape 2 in its central part
を保持してある。 It is holding the. このフレーム1に対する保持工程の後に、ウェーハ3は研磨装置4のチャックテーブル5に載置する工程がなされる。 After the holding step for the frame 1, the wafer 3 is the step of placing the chuck table 5 of the polishing apparatus 4 is performed.

【0007】前記チャックテーブル5の上面には、連通部5aが形成されると共に多孔質材で形成された載置テーブル6が装着され、この載置テーブル6は中央部6a [0007] wherein the upper surface of the chuck table 5 is mounted placing table 6 formed by a porous material with communicating portion 5a is formed, the mounting table 6 a central portion 6a
が周辺部6bよりやや高く形成されその間は緩やかな傾斜面6cとなっている。 There is between them is slightly higher form than the peripheral portion 6b has a gentle slope surface 6c. 又、チャックテーブル5内には吸引孔7が形成され、この吸引孔7は前記連通部5aに連通しており、吸引作用によって前記載置テーブル6上にウェーハ3を保持できるようにしてある。 Also, in the chuck table 5 suction holes 7 are formed, the suction holes 7 is communicated with the communicating portion 5a, are also available holds the wafer 3 on the placing table 6 by a suction action.

【0008】チャックテーブル5への載置工程がなされると、ウェーハ3は載置テーブル6の中央部6aに吸着され、フレーム1は一段下がった周辺部6bに吸着され、粘着テープ2は載置テーブル6の上面形状にぴったり沿うようにして吸着される。 [0008] placing step is made to the chuck table 5, the wafer 3 is attracted to the central portion 6a of the placing table 6, the frame 1 is adsorbed to the stage lowered periphery 6b, the adhesive tape 2 is placed It is adsorbed in the along perfect the shape of the upper surface of the table 6. 従って、ウェーハ3は下から少々突き上げられたような状態で保持されることになる。 Therefore, the wafer 3 will be held in a state such as is slightly pushed up from below.

【0009】この場合、チャックテーブル5の上面全体が粘着テープ2で覆われるため、ウェーハ3の径が変わってもフレーム1の径が同一であればチャックテーブル5を交換しなくても良く、又ユニバーサルチャックにしなくても良い。 [0009] In this case, since the entire top surface of the chuck table 5 is covered with the adhesive tape 2, it is not necessary to replace the chuck table 5 when the diameter of the frame 1 are the same even if the diameter of the wafer 3 is changed, and it may not be the universal chuck.

【0010】8は研磨装置4における研磨砥石であり、 [0010] 8 is a grindstone in the polishing device 4,
スピンドル9の下端部に回転可能に取り付けられ、前記ウェーハ3を適圧で押圧しながら研磨工程が遂行される。 Rotatably mounted to the lower end of the spindle 9, the polishing step is performed while pressing the wafer 3 in Teki圧. 前記のようにウェーハ3は周囲のフレーム1より一段高い位置に保持されているので、研磨砥石8により確実に研磨することが出来、且つフレーム1との接触も避けることが出来る。 Since said wafer 3 as being held in the raised position than the frame 1 around, can be polished certainly by grindstone 8, and the frame 1 and the contact can also be avoided.

【0011】10は搬送手段であり、図2に示すように複数個の吸着パット10aを有しこの吸着パット10a [0011] 10 is a transfer means, the suction pad 10a has a plurality of suction pads 10a as shown in FIG. 2
で前記フレーム1を吸着することにより研磨後のウェーハ3を次工程に搬送する工程がなされる。 In the step of conveying the wafer 3 after the polishing to the subsequent step by adsorbing the frame 1 is made. ウェーハ3はフレーム1に保持された状態で搬送されるため、研磨後に薄くなった大径のウェーハであっても損傷することなく安定良く搬送することが出来る。 Wafer 3 is to be conveyed while being held on the frame 1 can be stably conveyed well without damaging even the wafer having a large diameter thinned after polishing.

【0012】尚、チャックテーブルの載置テーブルは多孔質セラミックス、複数の細孔が形成された金属等で形成されるのが一般的であるが、かかる材質のものは比較的硬度が高く、研磨砥石の押圧力によって研磨される際ウェーハにダメージを与える場合がある。 [0012] Incidentally, the mount table of the chuck table is porous ceramics, although the plurality of pores are formed in the formed metal and the like is generally, those of such material is relatively high hardness, abrasive which may damage the wafer when it is polished by the pressing force of the grindstone. 従って、必ずしも限定されるものではないが載置テーブルを、又はその上面を多孔質のプラスチックで構成すると緩衝作用が生じ、ウェーハにダメージを与えることがなくて好ましい。 Therefore, the not necessarily but mount table is limited, or buffering action occurs and constituting the upper surface of a plastic porous, preferably without damaging the wafer. この多孔質のプラスチックとしては、研磨液等によって形状変化することのないフッ素樹脂系の焼結体が好ましい。 As the plastic porous, sintered body that no fluororesin to shape change by the polishing liquid or the like are preferable. 又、ポーラス径が30〜60μm、気孔率が4 Further, the porous diameter of 30 to 60 m, porosity 4
0〜50%位で多孔質のプラスチックを形成し、載置テーブルを構成すると良好なチャックテーブルを得ることが出来る。 The plastic porous form with 0-50% position, configuring mount table can be obtained a good chuck table. このチャックテーブルはウェーハの載置面を傷付けることがないので、本発明と異なりフレームを必要としないウェーハにおいては、従来必要であった載置面を保護する為のテープが不要となり、テープの無駄をなくすことが出来ると共にテープの貼付作業、剥離作業をなくすことが出来る。 This chuck table without injuring the mounting surface of the wafer, in the wafer that do not require a different frame invention, a tape for protecting the mounting surface has been conventionally required becomes unnecessary, a waste of the tape tape of the patch work together can be eliminated, it is possible to eliminate the peeling work.

【0013】 [0013]

【発明の効果】以上説明したように、本発明によれば、 As described in the foregoing, according to the present invention,
ウェーハは粘着テープを介してフレームに保持し、研磨後もそのフレームに保持された状態のまま搬送するようにしたので、研磨後に薄くなった大径のウェーハであっても次工程への搬送時に破損することはなく、又ウェーハの径が変わってもフレームの径が同一であればチャックテーブルを交換しなくても良く、更にユニバーサルチャックにしなくても良い等の優れた効果を奏する。 Wafer is held in the frame through the adhesive tape. Thus conveyed remain after polishing was also retained in the frame, even in a wafer having a large diameter thinned after polishing during transport to the next step damage not be, also an excellent effect of long diameter of the frame is the same even if the diameter of the wafer is changed may not replace the chuck table, it is not necessary to further universal chuck or the like.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 本発明によるウェーハ研磨方法の一実施例を示す説明図である。 FIG. 1 is an explanatory view showing an embodiment of a wafer polishing method according to the invention.

【図2】 研磨後にウェーハを搬送する状態を示す説明図である。 FIG. 2 is an explanatory view showing a state of conveying the wafer after polishing.

【符号の説明】 DESCRIPTION OF SYMBOLS

1…フレーム 2…粘着テープ 3…ウェーハ 1 ... 2 ... frame adhesive tape 3 ... wafer
4…研磨装置 5…チャックテーブル 5a…連通部 6…載置テーブル 6a…中央部 6b…周辺部 6c…傾斜面 7…吸引孔 8… 4 ... polishing apparatus 5 ... chuck table 5a ... communicating portion 6 ... mount table 6a ... central 6b ... peripheral portion 6c ... inclined surface 7 ... suction hole 8 ...
研磨砥石 9…スピンドル 10…搬送手段 1 Grindstone 9 ... spindle 10 ... conveying means 1
0a…吸着パット 0a ... the suction pad

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 ウェーハを粘着テープを介してフレームに保持する工程と、フレームに保持されたウェーハを研磨装置のチャックテーブルに載置する工程と、このウェーハを研磨する工程と、研磨後のウェーハをフレームを介して次工程に搬送する工程と、からなるウェーハの研磨方法。 A step of 1. A wafer is held in the frame through the adhesive tape, the step of placing a wafer held in the frame on the chuck table of the polishing apparatus, a step of polishing the wafer, the wafer after polishing process and wafer polishing method consisting of carrying through the frame in the next step.
JP11114593A 1993-04-15 1993-04-15 Polishing method of the wafer Expired - Lifetime JP3325650B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11114593A JP3325650B2 (en) 1993-04-15 1993-04-15 Polishing method of the wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11114593A JP3325650B2 (en) 1993-04-15 1993-04-15 Polishing method of the wafer

Publications (2)

Publication Number Publication Date
JPH06302569A true true JPH06302569A (en) 1994-10-28
JP3325650B2 JP3325650B2 (en) 2002-09-17

Family

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004014608A1 (en) * 2002-07-31 2004-02-19 Asahi Glass Company, Limited Method and device for polishing substrate
US6866564B2 (en) * 2000-09-27 2005-03-15 Strasbaugh Method of backgrinding wafers while leaving backgrinding tape on a chuck
US7406759B2 (en) 2003-09-30 2008-08-05 Nitto Denko Corporation Releasing method and releasing apparatus of work having adhesive tape
US7452752B2 (en) 2003-11-27 2008-11-18 3M Innovative Properties Company Production method of semiconductor chip
US7534498B2 (en) 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
US7614848B2 (en) 2006-10-10 2009-11-10 United Technologies Corporation Fan exit guide vane repair method and apparatus
US7759050B2 (en) 2006-07-14 2010-07-20 3M Innovative Properties Company Method for manufacturing thin substrate using a laminate body
JP2011044474A (en) * 2009-08-19 2011-03-03 Disco Abrasive Syst Ltd Grinding device for wafer
JP2011125988A (en) * 2009-12-21 2011-06-30 Disco Abrasive Syst Ltd Grinding device
US8038839B2 (en) 2002-06-03 2011-10-18 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP2013086232A (en) * 2011-10-20 2013-05-13 Murata Mfg Co Ltd Grinding device and grinding method
US9184083B2 (en) 2013-07-29 2015-11-10 3M Innovative Properties Company Apparatus, hybrid laminated body, method and materials for temporary substrate support

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6358879B2 (en) * 2014-07-16 2018-07-18 株式会社ディスコ Workpiece holding unit

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866564B2 (en) * 2000-09-27 2005-03-15 Strasbaugh Method of backgrinding wafers while leaving backgrinding tape on a chuck
US7534498B2 (en) 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
US7988807B2 (en) 2002-06-03 2011-08-02 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
US8800631B2 (en) 2002-06-03 2014-08-12 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
US8789569B2 (en) 2002-06-03 2014-07-29 3M Innovative Properties Company Apparatus for manufacturing ultrathin substrate using a laminate body
US8038839B2 (en) 2002-06-03 2011-10-18 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
US7115022B2 (en) 2002-07-31 2006-10-03 Asahi Glass Company, Limited Method and apparatus for polishing a substrate
WO2004014608A1 (en) * 2002-07-31 2004-02-19 Asahi Glass Company, Limited Method and device for polishing substrate
US7210982B2 (en) 2002-07-31 2007-05-01 Asahi Glass Company, Limited Method and apparatus for polishing a substrate
US7406759B2 (en) 2003-09-30 2008-08-05 Nitto Denko Corporation Releasing method and releasing apparatus of work having adhesive tape
US7987888B2 (en) 2003-09-30 2011-08-02 Nitto Denko Corporation Releasing method and releasing apparatus of work having adhesive tape
US7452752B2 (en) 2003-11-27 2008-11-18 3M Innovative Properties Company Production method of semiconductor chip
US7759050B2 (en) 2006-07-14 2010-07-20 3M Innovative Properties Company Method for manufacturing thin substrate using a laminate body
US7614848B2 (en) 2006-10-10 2009-11-10 United Technologies Corporation Fan exit guide vane repair method and apparatus
JP2011044474A (en) * 2009-08-19 2011-03-03 Disco Abrasive Syst Ltd Grinding device for wafer
JP2011125988A (en) * 2009-12-21 2011-06-30 Disco Abrasive Syst Ltd Grinding device
JP2013086232A (en) * 2011-10-20 2013-05-13 Murata Mfg Co Ltd Grinding device and grinding method
US9184083B2 (en) 2013-07-29 2015-11-10 3M Innovative Properties Company Apparatus, hybrid laminated body, method and materials for temporary substrate support

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