JPS6296516U - - Google Patents

Info

Publication number
JPS6296516U
JPS6296516U JP12510086U JP12510086U JPS6296516U JP S6296516 U JPS6296516 U JP S6296516U JP 12510086 U JP12510086 U JP 12510086U JP 12510086 U JP12510086 U JP 12510086U JP S6296516 U JPS6296516 U JP S6296516U
Authority
JP
Japan
Prior art keywords
ferromagnetic magnetoresistive
thin film
parallel
permanent magnet
magnetoresistive thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12510086U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12510086U priority Critical patent/JPS6296516U/ja
Publication of JPS6296516U publication Critical patent/JPS6296516U/ja
Pending legal-status Critical Current

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  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の無接点変位検出器の基本構成
を示した模式図でaは平面図、bは斜視図、第2
図は本考案の実施例を示す図でaは平面図、bは
斜視図、第3図は実験に使用したMR素子を表わ
す平面図、第4図はMR素子出力を実測した例を
示す図でaは具体的構成図、bは出力曲線、第5
図は磁界の方向の回転を検出しているのではない
構成についてMR素子出力を実測した図で、aは
具体的構成図、bは出力曲線を示す図である。 図において、1,61,98はMR素子、2,
62,99は永久磁石、3は駆動検出回路、5,
63,100は変位線、6,91はMR素子の基
板、8,93,94,95,96は電極端子、6
3A,63Bは変位線上の点、4,64は面内成
分磁界、66は永久磁石の対向面、67は永久磁
石の対向面の一辺、7,68,92はMR膜、9
7はMR素子の基準方向を表わす。
Figure 1 is a schematic diagram showing the basic configuration of the non-contact displacement detector of the present invention, in which a is a plan view, b is a perspective view, and
The figures show an embodiment of the present invention, in which a is a plan view, b is a perspective view, Fig. 3 is a plan view showing the MR element used in the experiment, and Fig. 4 is a diagram showing an example of actually measured MR element output. where a is the specific configuration diagram, b is the output curve, and the fifth
The figure shows the actual measurement of the MR element output for a configuration in which rotation in the direction of the magnetic field is not detected, in which a is a diagram showing a specific configuration and b is a diagram showing an output curve. In the figure, 1, 61, 98 are MR elements, 2,
62, 99 are permanent magnets, 3 is a drive detection circuit, 5,
63, 100 are displacement lines, 6, 91 are MR element substrates, 8, 93, 94, 95, 96 are electrode terminals, 6
3A and 63B are points on the displacement line, 4 and 64 are in-plane component magnetic fields, 66 is the opposing surface of the permanent magnet, 67 is one side of the opposing surface of the permanent magnet, 7, 68, and 92 are the MR films, 9
7 represents the reference direction of the MR element.

Claims (1)

【実用新案登録請求の範囲】 1 互いに直線的に相対的変位をする永久磁石と
強磁性磁気抵抗効果素子、及び前記相対的変位を
電気信号として出力する駆動検出回路とを含んで
構成された無接点変位検出器において、前記永久
磁石によつて前記強磁性磁気抵抗効果素子の強磁
性磁気抵抗効果薄膜に作用する磁界の強度を該強
磁性磁気抵抗効果薄膜の磁化回転に要する強度以
上に保ちながら、かつ前記相対的変位に伴ない前
記磁界の方向が前記強磁性磁気抵抗効果薄膜に対
向する前記永久磁石の対向面に平行な内面で回転
する様に、前記永久磁石の対向面は、両者の相対
的変位の方向と平行な辺を持つ矩形で、全体がN
極(又はS極)とし、更に前記強磁性磁気抵抗効
果薄膜の膜面及び前記永久磁石対向面及び前記相
対的変位の方向がすべてほぼ平行で、かつ強磁性
磁気抵抗効果薄膜の中心が前記対向面の前記相対
的変位に平行な辺の近傍に対向する様に配置した
ことを特徴とする無接点変位検出器。 2 強磁性磁気抵抗効果薄膜を流れる電流の方向
と、相対的変位の平行とがほぼ垂直、または平行
になる様に強磁性磁気抵抗効果素子を配置した実
用新案登録請求の範囲第1項記載の無接点変位検
出器。
[Claims for Utility Model Registration] 1. A device comprising a permanent magnet and a ferromagnetic magnetoresistive element that are linearly displaced relative to each other, and a drive detection circuit that outputs the relative displacement as an electrical signal. In the contact displacement detector, while maintaining the strength of the magnetic field acting on the ferromagnetic magnetoresistive thin film of the ferromagnetic magnetoresistive element by the permanent magnet to be greater than the intensity required for magnetization rotation of the ferromagnetic magnetoresistive thin film. , and the opposing surfaces of the permanent magnets are arranged so that the direction of the magnetic field rotates on an inner surface parallel to the opposing surface of the permanent magnet facing the ferromagnetic magnetoresistive thin film. A rectangle with sides parallel to the direction of relative displacement, with a total size of N
a pole (or S pole), and further, the film surface of the ferromagnetic magnetoresistive thin film, the surface facing the permanent magnet, and the direction of the relative displacement are all substantially parallel, and the center of the ferromagnetic magnetoresistive thin film is opposite to the opposing surface. A non-contact displacement detector, characterized in that the non-contact displacement detector is arranged so as to face a side near a side parallel to the relative displacement of the surface. 2. A utility model according to claim 1, in which the ferromagnetic magnetoresistive element is arranged so that the direction of the current flowing through the ferromagnetic magnetoresistive thin film and the parallel of the relative displacement are substantially perpendicular or parallel to each other. Non-contact displacement detector.
JP12510086U 1986-08-15 1986-08-15 Pending JPS6296516U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12510086U JPS6296516U (en) 1986-08-15 1986-08-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12510086U JPS6296516U (en) 1986-08-15 1986-08-15

Publications (1)

Publication Number Publication Date
JPS6296516U true JPS6296516U (en) 1987-06-19

Family

ID=31017711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12510086U Pending JPS6296516U (en) 1986-08-15 1986-08-15

Country Status (1)

Country Link
JP (1) JPS6296516U (en)

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