JPS6294911A - Manufacture of toroidal electrolytic capacitor - Google Patents

Manufacture of toroidal electrolytic capacitor

Info

Publication number
JPS6294911A
JPS6294911A JP23593285A JP23593285A JPS6294911A JP S6294911 A JPS6294911 A JP S6294911A JP 23593285 A JP23593285 A JP 23593285A JP 23593285 A JP23593285 A JP 23593285A JP S6294911 A JPS6294911 A JP S6294911A
Authority
JP
Japan
Prior art keywords
tcnq
electrolytic capacitor
film
manufacturing
wound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23593285A
Other languages
Japanese (ja)
Inventor
清志 坂本
成沢 虞美子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAGAI DENSHI KOGYO KYODO KUMIA
NAGAI DENSHI KOGYO KYODO KUMIAI
Original Assignee
NAGAI DENSHI KOGYO KYODO KUMIA
NAGAI DENSHI KOGYO KYODO KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAGAI DENSHI KOGYO KYODO KUMIA, NAGAI DENSHI KOGYO KYODO KUMIAI filed Critical NAGAI DENSHI KOGYO KYODO KUMIA
Priority to JP23593285A priority Critical patent/JPS6294911A/en
Publication of JPS6294911A publication Critical patent/JPS6294911A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は新規な構成からなる巻回形電解コンデンサの製
造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a wound electrolytic capacitor having a novel configuration.

[発明の技術的青石とその問題点] 一般に乾式薄形電解コンデンサは、例えばアルミニウム
箔からなお一対の陽陰極箔に同じくアルミニウムからな
る一対の引出端子を接続し、前記一対の陽陰4f!箔相
互間にスペーサを介在させ巻回し、しかるのち駆動用電
M液を含浸しケースに収納し、該ケース間口部を密封し
てなるものである。
[Technical blue stone of the invention and its problems] In general, a dry type thin electrolytic capacitor is made of, for example, aluminum foil, and a pair of lead terminals also made of aluminum are connected to a pair of anode and cathode foils, and the pair of positive and negative electrodes 4f! The foil is wound with a spacer interposed between the foils, and then impregnated with a driving electromagnetic liquid, housed in a case, and the opening of the case is sealed.

一般にスペーサを介在する目的は一対の陽陰極箔相互間
の絶縁隔離および駆動用電解液の保持であり、乾式薄形
電解コンデンサにおいては重要な構成要件である。しか
して、一般に用いられているスペーサはクラフト紙であ
るが、該クラフト紙は密度が0.3〜0.8Q/as3
と密度が比較的高く、また繊維が平べったくつぶれてい
るため見掛は上の比抵抗が大きくなりtanδ特性を損
ね、またクラフト紙は抄紙技術上の問題で厚みは30μ
m以上あり、これ以上薄くできず小形化を阻害する要因
となっており、ざらに加電圧、逆電圧印加などによるコ
ンデンサ破壊時に着火し継続燃焼のおそれがあるなどの
欠点をもっていた。そのため現在クラフト紙に変え低密
痩のマニラ紙を用いる傾向にあり、tanδ特性改善に
大きく貢献しているが、マニラ紙はクラフト紙に比べて
価格が数18と高く、加えて抄紙後の強度をコンデンサ
の製造工程(特に巻取工程)に耐えうるためには厚さ4
0μm以上のものを用いなければならず依然として小形
化の阻害要因となっていた。 また液体の駆動用電解液
を使用しているためtanδ特性改善にも限度があり、
さらに液体の駆動用電解液は低温で比抵抗が上がり低温
特性が極度に悪化し広温度範囲で使用するには信頼性に
欠けなど実用上解決すべき問題をもっているばかりか、
引出端子を陽・陰極箔途中にステッチして引出した構造
であるため周波数特性が悪い問題をも抱えていた。
Generally, the purpose of interposing a spacer is to insulate and isolate a pair of anode and cathode foils and to retain a driving electrolyte, which is an important component in a dry type thin electrolytic capacitor. However, the commonly used spacer is kraft paper, but the kraft paper has a density of 0.3 to 0.8Q/as3.
The density of kraft paper is relatively high, and since the fibers are flattened, the apparent resistivity increases, impairing the tan δ properties.Kraft paper has a thickness of 30 μm due to paper-making technology issues.
m or more, which hinders miniaturization as it cannot be made any thinner, and has drawbacks such as the risk of ignition and continued combustion when the capacitor breaks down due to applied voltage or reverse voltage. Therefore, there is currently a trend to use low-density manila paper instead of kraft paper, which greatly contributes to improving tanδ properties. The thickness must be 4 to withstand the capacitor manufacturing process (especially the winding process).
It was necessary to use a material with a diameter of 0 μm or more, which was still an impediment to miniaturization. Furthermore, since a liquid driving electrolyte is used, there is a limit to the improvement of tan δ characteristics.
Furthermore, the liquid driving electrolyte has problems that need to be solved in practice, such as its specific resistance increases at low temperatures, resulting in extremely poor low-temperature characteristics and lacks reliability when used over a wide temperature range.
It also had the problem of poor frequency characteristics because the lead terminal was stitched in the middle of the anode and cathode foils.

そのため近年、例えば特開昭58−17609号公報、
特開昭58−191414号公報または特開昭59−6
3604号公報に開示されているように駆動用電解液に
かえ、N−n−プロピル(またはN−イソ−プロピル)
イソキノリン、N−エチルイソキノリン、N−n−ブチ
ルイソキノリン、N位を炭化水素基で買換したキノリン
、イソキノリンまたはピリジンなどからなるTCNQ錯
塩を用い、特性を改善したものが提案されている。しか
して、このようなT CN Q 8B塩を用いてなる電
解コンデンサは一般にこれらTCNQ錯塩を溶融含浸し
て用いる訳であるが、TCNQ錯塩を溶融含浸する時に
加熱されるためTCNQ錯塩の伝導度が変わりやす(t
anδ特性に問題があり、また従来どおり引出端子を巻
回体の途中に挿入したタイプであるため高周波数での特
性が悪く、しかもスペーサを用いているため陽・陰極間
(約40〜50μm)が広く、等個直列抵抗が大きいな
ど依然として解決すべき問題は残っていた。さらに上記
公報に開示されたTCNQ錯塩は真空蒸着が難しいばか
りか、それ自体の温度特性もそれほど良くない問題をも
もっていた。
Therefore, in recent years, for example, Japanese Patent Application Laid-open No. 58-17609,
JP-A-58-191414 or JP-A-59-6
As disclosed in Publication No. 3604, instead of the driving electrolyte, N-n-propyl (or N-iso-propyl)
TCNQ complex salts made of isoquinoline, N-ethylisoquinoline, N-n-butylisoquinoline, quinoline whose N-position has been replaced with a hydrocarbon group, isoquinoline, or pyridine have been proposed to have improved properties. However, electrolytic capacitors using such TCNQ 8B salts are generally used by melting and impregnating these TCNQ complex salts, but since the TCNQ complex salts are heated when melting and impregnating them, the conductivity of the TCNQ complex salts decreases. changeable (t
There is a problem with the anδ characteristics, and since the lead terminal is inserted in the middle of the winding as before, the characteristics at high frequencies are poor, and because a spacer is used, the distance between the anode and cathode (approximately 40 to 50 μm) However, there were still problems to be solved, such as a wide range of resistance and a large equal series resistance. Furthermore, the TCNQ complex salt disclosed in the above-mentioned publication was not only difficult to vacuum evaporate, but also had the problem that its temperature characteristics were not very good.

[発明の目的] 本発明は上記の点に鑑みてなされたもので、上記問題を
一気に解決し、広い温度範囲の使用においても安定した
開時性が得られる新規な構成からなる巻回形電解コンデ
ンサの製造方法を提供することを目的とするものである
[Object of the Invention] The present invention has been made in view of the above points, and provides a wound type electrolytic device having a novel configuration that solves the above problems at once and provides stable opening performance even when used in a wide temperature range. The object of the present invention is to provide a method for manufacturing a capacitor.

[発明の概要] 本発明の巻回形電解コンデンサの製造方法は、絶縁物の
片面または両面に弁作用金属箔をラミネートし、つぎに
該金属箔の表面に生成した陽極酸化皮膜上にTCNQ錯
塩を真空蒸着し有機半導体膜を形成し、該有機半導体膜
上に金属を真空蒸着し陰極電極膜を形成し基本素子を得
たのら、該基本素子を巻回し両端面に電極引出部を形成
することを特徴としたものである。
[Summary of the Invention] The method for manufacturing a wound electrolytic capacitor of the present invention involves laminating a valve metal foil on one or both sides of an insulator, and then depositing a TCNQ complex salt on the anodized film formed on the surface of the metal foil. A metal is vacuum evaporated to form an organic semiconductor film, a metal is vacuum evaporated on the organic semiconductor film to form a cathode electrode film to obtain a basic element, and then the basic element is wound to form electrode extension parts on both end faces. It is characterized by

[発明の実施例] 以下本発明の一実施例につき詳細に説明する。[Embodiments of the invention] An embodiment of the present invention will be described in detail below.

すなわち、第2図に示すように例えばポリエステル、ト
リアセテ−1−、テトラフロロエチレン、ポリカーボネ
ート、ポリアミド、ポリイミドなどからなるプラスチッ
クフィルムまたはプラスチックシートなどの絶縁物(1
)の片面に一端部を余白部(2)としてアルミニウム金
層箔をラミネートし弁作用金属箔(3)部を形成したの
ら、該弁作用金属箔(3)を陽極酸化し該弁作用金属箔
(3)表面に陽極酸化皮膜(4)を生成し、しかる後部
陽極酸化皮膜(4)の前記余白部(2)の反対側に位置
する端面を除いた面上から前記余白部(2)面上に例え
ば2.2′−ビピリディニウム(TCNQ)2.4−ハ
イドロオキシ−N−ベンジルアニリニウム(TCNQ)
  、 4−アミノ−2,3,5,6一テトラメチルア
ニリニウム(丁CNQ)2、ビリディニウム(TCNQ
)  、 4−シアノ−Nメチルへビリデニウム(TC
NQ)  、 N−Eエチルキノリニウム(TCNQ>
  、 N−(2−フエニチル)キノリニウム(TCN
Q>2などからなるTCNQ錯塩を真空蒸着し有機半導
体膜(5)を形成する。つぎに該有機半導体膜(5)の
前記余白部(2)の反対側に位ぎする端面を除いた面上
に銀、銅または金などの金属を真空蒸着して陰極電極膜
(6)を形成し基本素子(γ)を(7る。
That is, as shown in FIG.
), an aluminum gold layer foil is laminated on one side of the valve metal foil (3) with one end as a margin (2) to form a valve metal foil (3), and then the valve metal foil (3) is anodized to form the valve metal foil (3). An anodic oxide film (4) is formed on the surface of the foil (3), and the margin part (2) is formed on the surface of the rear anodic oxide film (4) excluding the end face located on the opposite side of the margin part (2). For example, 2,2'-bipyridinium (TCNQ) 2,4-hydroxy-N-benzylanilinium (TCNQ)
, 4-amino-2,3,5,6-tetramethylanilinium (TCNQ)2, viridinium (TCNQ)
), 4-cyano-N methyl helidenium (TC
NQ), N-E ethylquinolinium (TCNQ>
, N-(2-phenythyl)quinolinium (TCN
A TCNQ complex salt having Q>2 or the like is vacuum deposited to form an organic semiconductor film (5). Next, a cathode electrode film (6) is formed by vacuum-depositing a metal such as silver, copper, or gold on the surface of the organic semiconductor film (5) excluding the end face located on the opposite side of the margin (2). The basic element (γ) is formed (7).

しかして、該基本素子(7)を第1図に示すように巻回
し、両端面に銀または銅ペーストを塗布−乾燥するかま
たは亜鉛、アルミニウムまたはハンダなどの金属をメタ
リコンし゛;■極引出部(8)を形成し、該z 1引出
部(8)に外部端子(9)を取着し、ケースに収納する
か樹脂被覆などを施し外装(図示せず)形成してなるも
のである。
Then, the basic element (7) is wound as shown in Fig. 1, and both ends are coated with silver or copper paste and dried, or metallized with metal such as zinc, aluminum or solder; (8), an external terminal (9) is attached to the Z1 drawer part (8), and the external terminal (9) is housed in a case or coated with resin or the like to form an exterior (not shown).

以上のように構成してなる巻回形゛盾解コンデンサの製
造方法によれば、有機半導体膜形成とじてlν■述のに
うなTCNQ錯塩を用いるため真空熱r!が容易となり
、従来例の溶融含浸のように加熱されないので伝導度が
高(tanδ特性が良好であり、また前述のようなTC
NQ錯塩は温度変化による比抵抗の変化は小さく、しか
もスペーサを用いないため陽・陰極間の抵抗も小さくで
き、よって低温から高温の広い温度範囲にJ3いてta
nδ特性の変化・静電容ωの変化および閏れ電流特性の
変化も少なく、さらには従来例と違い素子形状が無誘導
タイプとなるため高周波数でのインピーダンス特性が大
幅に改善されるなど多くのすぐれた効果を奏する利点を
有する。
According to the method for manufacturing the wound shield capacitor constructed as described above, since the TCNQ complex described above is used in the formation of the organic semiconductor film, vacuum heat r! Since it is not heated unlike the conventional melt impregnation, the conductivity is high (tan δ characteristics are good, and the TC
NQ complex salt has a small change in specific resistance due to temperature change, and since no spacer is used, the resistance between the anode and cathode can be reduced, so it can be used in J3 over a wide temperature range from low to high temperatures.
There are few changes in nδ characteristics, changes in capacitance ω, and changes in leap current characteristics, and unlike conventional examples, the element shape is non-inductive, so impedance characteristics at high frequencies are significantly improved. It has the advantage of having excellent effects.

つぎに本発明の実施例と従来の参考例との比較の一例に
ついて述べる。
Next, an example of comparison between an embodiment of the present invention and a conventional reference example will be described.

実  施  例 ポリエステルフィルムの片面厚さ10μmのアルミニウ
ム箔をラミネートしたのち、アジピン酸アン[ニウム1
0%水溶液中で100VO)電圧を印加し陽極酸化し、
該陽極酸化によってアルミニウム箔表面に生成した陽極
酸化皮膜上に、2,2、−ビピリディニウム(TCNQ
)2を温度150℃、5分間の条件で真空蒸着し厚さ5
μmの有機゛1り導体膜を形成し、つぎに該有機半導体
膜上にAgを真空蒸着しノブさ5μmの陰極電極膜を形
成し1qた第2図に示すような構成からなる基本素子を
谷回し両端面にAQベース1へを塗布−乾燥し電極引出
部を形成し、該電極引出部に引出端子を溶着し、外装構
造としてエポキシ樹脂を被覆してなる定格25WV、D
C−0,1μFの巻回形電解コンデンサ(A> 参  考  例 アルミニウム箔表面を粗面化したのち陽VMM化皮膜生
成した陽極箔とアルミニウム箔表面を粗面化した陰極箔
間にスペーサとしてマニラ紙を介在しき回した素子に、
N−n−プロビルイソノキノリンのTCNQ鉗塩を溶融
含浸し、金属ケース外装トシテなる定格25WV、DC
−0,1μFの電解コンデンサ(B) なお上記(B)における引出端子は陽・陰極a)にステ
ツチし引出した構造である。
Example After laminating aluminum foil with a thickness of 10 μm on one side of a polyester film, am[nium adipate 1
Anodic oxidation is performed by applying a voltage of 100 VO in a 0% aqueous solution,
On the anodic oxide film formed on the surface of the aluminum foil by the anodic oxidation, 2,2-bipyridinium (TCNQ
) 2 was vacuum deposited at a temperature of 150°C for 5 minutes to a thickness of 5.
A basic element having the structure shown in Fig. 2 was formed by forming an organic conductor film of 1 µm in thickness, and then vacuum-evaporating Ag on the organic semiconductor film to form a cathode electrode film with a knob size of 5 µm. AQ base 1 is applied to both end faces of the valley turn, dried to form an electrode lead-out part, a lead-out terminal is welded to the electrode lead-out part, and an epoxy resin is coated as an exterior structure, rated at 25 WV, D.
C-0, 1 μF wound type electrolytic capacitor (A> Reference Example: After roughening the surface of the aluminum foil, a positive VMM coating was formed using a manila as a spacer between the anode foil and the cathode foil with the roughened aluminum foil surface. The element is made by rotating paper with paper in between.
Molten and impregnated with TCNQ salt of N-n-probylisonoquinoline, the metal case exterior is rated at 25WV, DC.
-0.1 μF electrolytic capacitor (B) The lead terminal in (B) above has a structure in which the anode and cathode a) are stitched and drawn out.

しかして上記本発明に係る実施例(A>と従来の参考例
(B)の温度に対する静電容1d変化率J3よびtan
δ、さらには漏れ電流を調べた結果第3図〜第5図に示
すようになり、また周波数−インピーダンス特性を調べ
た結果第6図に示すようになった。
However, the capacitance 1d change rate J3 and tan with respect to temperature in the above embodiment (A>) according to the present invention and the conventional reference example (B)
The results of investigating δ and furthermore the leakage current were as shown in FIGS. 3 to 5, and the results of investigating the frequency-impedance characteristics were as shown in FIG. 6.

第3図〜第6図から明らかなように、いずれの特性にお
いても実施例(A)は参考例(B)より安定しており、
特に高周波数でのインピーダンス特性がすぐれており、
本発明のづ−ぐれた効果を実証した。
As is clear from FIGS. 3 to 6, Example (A) is more stable than Reference Example (B) in all characteristics.
It has particularly excellent impedance characteristics at high frequencies,
The outstanding effects of the present invention were demonstrated.

なお上記実fk例では弁作用金属箔としてアルミニウム
箔を用いるものを例示して説明したが、例えばタンタル
、チタン、ニオブなどの伯の弁作用金属箔を用いたもの
でも同様の効果を得ることができる。また上記各実施例
では基本素子構成として絶縁物の片面にのみ弁作用金属
箔、有機半導体膜、陰極電極膜を形成するものを例示し
て説明したが、絶縁物の両面に形成づ−るようにしても
同様の効果が得られることは言うまでbない。
Although the above actual fk example uses aluminum foil as the valve metal foil, the same effect can be obtained by using a valve metal foil such as tantalum, titanium, or niobium. can. Furthermore, in each of the above embodiments, the basic element configuration was explained by exemplifying a valve metal foil, an organic semiconductor film, and a cathode electrode film formed only on one side of an insulator. Needless to say, the same effect can be obtained even if

[発明の効果] 本発明によればスペーサを廃止し、しかも有機半導体膜
として新規なTCNQ錯塩を用いることによって安定し
た特性が得られる既存の電解コンデンサ構成の枠を越え
た全く新規な構成からなる実用的価値の高い巻回形電解
コンデンサの製造方法を得ることができる。
[Effects of the Invention] According to the present invention, a spacer is abolished and stable characteristics are obtained by using a new TCNQ complex salt as an organic semiconductor film, which is a completely new configuration that goes beyond the framework of existing electrolytic capacitor configurations. A method for manufacturing a wound electrolytic capacitor with high practical value can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は本発明の一実施例に係り第1図は
巻回形電解コンデンサを示す正断面図、第2図は第1図
を構成する基本素子を示す斜視図、第3図は温度−静電
容量変化率特性曲線図、第4図は温度−tanδ特性曲
線図、第5図は温度−漏れ電流特性曲線図、第6図は周
波数−インピーダンス特性曲線図である。 (1)・・・・・・絶縁物    (2)・・・・・・
余白部(3)・・・・・・弁作用金属箔 (4)・・・
・・・陽極酸化皮膜(5)・・・・・・有機半導体膜 
(6)・・・・・・陰極電極膜(1)・・・・・・基本
素子   (8)・・・・・・電極引山部特許出願人 
 長井電子工業協同組合 第1図 hパ“(ゞ)     1 詔 ’A  R(”C) 第5図 第6図 手  続  補  正  1!1(自発)+KI和61
年5月190 回
1 and 2 relate to one embodiment of the present invention; FIG. 1 is a front sectional view showing a wound type electrolytic capacitor, FIG. 2 is a perspective view showing basic elements constituting FIG. 1, and FIG. 4 is a temperature-tan δ characteristic curve, FIG. 5 is a temperature-leakage current characteristic curve, and FIG. 6 is a frequency-impedance characteristic curve. (1)・・・Insulator (2)・・・・・・
Margin area (3)... Valve metal foil (4)...
...Anodized film (5) ...Organic semiconductor film
(6)・・・Cathode electrode film (1)・・・Basic element (8)・・・Electrode pulling part patent applicant
Nagai Electronics Industrial Cooperative Association Figure 1 H Pa "(ゞ) 1 Rescript 'A R("C) Figure 5 Figure 6 Procedures Amendment 1!1 (voluntary) + KIwa 61
May 190 times

Claims (3)

【特許請求の範囲】[Claims] (1)絶縁物の片面または両面に弁作用金属箔をラミネ
ートする手段と、該金属箔の表面に陽極酸化皮膜を生成
する手段と、該酸化皮膜上にTCNQ錯塩を真空蒸着し
有機半導体膜を形成する手段と、該有機半導体膜上に金
属を真空蒸着し陰極電極膜を形成し基本素子を得る手段
と、該基本素子を巻回し両端面に電極引出部を形成する
手段とを具備したことを特徴とする巻回形電解コンデン
サの製造方法。
(1) A means for laminating a valve metal foil on one or both sides of an insulator, a means for forming an anodic oxide film on the surface of the metal foil, and a means for forming an organic semiconductor film by vacuum depositing a TCNQ complex salt on the oxide film. means for forming a basic element by vacuum evaporating metal on the organic semiconductor film to form a cathode electrode film, and means for winding the basic element to form electrode extension parts on both end faces. A method for manufacturing a wound electrolytic capacitor characterized by:
(2)絶縁物がプラスチックフィルム、プラスチックシ
ートからなることを特徴とする特許請求の範囲第(1)
項記載の巻回形電解コンデンサの製造方法。
(2) Claim (1) characterized in that the insulator is made of a plastic film or a plastic sheet.
A method for manufacturing a wound type electrolytic capacitor as described in .
(3)TCNQ錯塩が2、2′−ビピリディニウム(T
CNQ)_2、4−ハイドロオキシ−N−ベンジルアニ
リニウム(TCNQ)2、 4−アミノ−2、3、5、6−テトラメチルアニリニウ
ム(TCNQ)_2、ピリデイニウム(TCNQ)_2
、4−シアノ−Nメチル−ピリデニウム(TCNQ)_
2、N−Eエチルキノリニウム(TCNQ)_2、N−
(2−フエニチル)キノリニウム(TCNQ)_2から
なることを特徴とする特許請求の範囲第(1)項または
特許請求の範囲第(2)項記載の巻回形電解コンデンサ
の製造方法。
(3) TCNQ complex salt is 2,2'-bipyridinium (T
CNQ)_2,4-hydroxy-N-benzylanilinium (TCNQ)2, 4-amino-2,3,5,6-tetramethylanilinium (TCNQ)_2, pyridinium (TCNQ)_2
, 4-cyano-N methyl-pyridenium (TCNQ)_
2, N-E ethylquinolinium (TCNQ)_2, N-
A method for manufacturing a wound electrolytic capacitor according to claim (1) or claim (2), characterized in that it is made of (2-phenythyl)quinolinium (TCNQ)_2.
JP23593285A 1985-10-21 1985-10-21 Manufacture of toroidal electrolytic capacitor Pending JPS6294911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23593285A JPS6294911A (en) 1985-10-21 1985-10-21 Manufacture of toroidal electrolytic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23593285A JPS6294911A (en) 1985-10-21 1985-10-21 Manufacture of toroidal electrolytic capacitor

Publications (1)

Publication Number Publication Date
JPS6294911A true JPS6294911A (en) 1987-05-01

Family

ID=16993364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23593285A Pending JPS6294911A (en) 1985-10-21 1985-10-21 Manufacture of toroidal electrolytic capacitor

Country Status (1)

Country Link
JP (1) JPS6294911A (en)

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