JPS6291492A - 分子線エピタキシ−装置 - Google Patents
分子線エピタキシ−装置Info
- Publication number
- JPS6291492A JPS6291492A JP23164185A JP23164185A JPS6291492A JP S6291492 A JPS6291492 A JP S6291492A JP 23164185 A JP23164185 A JP 23164185A JP 23164185 A JP23164185 A JP 23164185A JP S6291492 A JPS6291492 A JP S6291492A
- Authority
- JP
- Japan
- Prior art keywords
- shutter
- raw material
- cell
- crucible
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001451 molecular beam epitaxy Methods 0.000 title claims description 11
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 abstract description 15
- 230000007547 defect Effects 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 230000001580 bacterial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23164185A JPS6291492A (ja) | 1985-10-16 | 1985-10-16 | 分子線エピタキシ−装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23164185A JPS6291492A (ja) | 1985-10-16 | 1985-10-16 | 分子線エピタキシ−装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6291492A true JPS6291492A (ja) | 1987-04-25 |
| JPH0352434B2 JPH0352434B2 (enrdf_load_stackoverflow) | 1991-08-09 |
Family
ID=16926679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23164185A Granted JPS6291492A (ja) | 1985-10-16 | 1985-10-16 | 分子線エピタキシ−装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6291492A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH2193H1 (en) * | 2001-01-30 | 2007-07-03 | The United States Of America As Represented By The Secretary Of The Air Force | Method of growing homoepitaxial silicon carbide |
-
1985
- 1985-10-16 JP JP23164185A patent/JPS6291492A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH2193H1 (en) * | 2001-01-30 | 2007-07-03 | The United States Of America As Represented By The Secretary Of The Air Force | Method of growing homoepitaxial silicon carbide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0352434B2 (enrdf_load_stackoverflow) | 1991-08-09 |
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