JPS6291456U - - Google Patents
Info
- Publication number
- JPS6291456U JPS6291456U JP18399385U JP18399385U JPS6291456U JP S6291456 U JPS6291456 U JP S6291456U JP 18399385 U JP18399385 U JP 18399385U JP 18399385 U JP18399385 U JP 18399385U JP S6291456 U JPS6291456 U JP S6291456U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- package
- diac
- reverse conduction
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Thyristors (AREA)
- Electronic Switches (AREA)
Description
第１図は本考案の一実施例による半導体装置の
構成図、第２図は第１図の逆導通サイリスタの初
期導通領域を示す図、第３図は第１図の半導体装
置をＴＯ―９２パツケージに実装した様子を示す
図、第４図は逆阻止２端子サイリスタを用いた点
火装置を示す図、第５図は第４図の点火トランス
の１次電流の時間的変化を示す図、第６図は第４
図の逆阻止２端子サイリスタチツプの断面図、第
７図は第４図の逆阻止２端子サイリスタの静特性
を示す図、第８図は第４図の逆阻止２端子サイリ
スタのスイツチング損失を示す図、第９図は第４
図の逆阻止２端子サイリスタの破壊モードを示す
図である。
図において、１１は逆導通サイリスタ、１２は
ダイアツクである。
1 is a block diagram of a semiconductor device according to an embodiment of the present invention, FIG. 2 is a diagram showing the initial conduction region of the reverse conduction thyristor of FIG. 1, and FIG. 3 is a diagram showing the semiconductor device of FIG. Fig. 4 is a diagram showing an ignition system using a reverse blocking two-terminal thyristor, Fig. 5 is a diagram showing temporal changes in the primary current of the ignition transformer in Fig. 4, Figure 6 is the fourth
Figure 7 is a diagram showing the static characteristics of the reverse blocking two-terminal thyristor shown in Figure 4, and Figure 8 is a diagram showing the switching loss of the reverse blocking two-terminal thyristor shown in Figure 4. Figure 9 is the 4th
It is a figure which shows the destruction mode of the reverse blocking two terminal thyristor of a figure. In the figure, 11 is a reverse conduction thyristor, and 12 is a diagonal.
Claims (1)
イリスタとダイアツクとを備え、 前記逆導通サイリスタの陽極とゲートとの間に
前記ダイアツクを接続してなることを特徴とする
半導体装置。 (2) 前記ダイアツクは、１００〜２００Ｖのス
イツチング電圧を有するものであることを特徴と
する実用新案登録請求の範囲第１項記載の半導体
装置。 (3) 前記パツケージは、ＴＯ―９２パツケージ
であることを特徴とする実用新案登録請求の範囲
第１項または第２項記載の半導体装置。[Claims for Utility Model Registration] (1) It is characterized by comprising a reverse conduction thyristor and a diac enclosed in the same package, and the diac is connected between the anode and the gate of the reverse conduction thyristor. semiconductor device. (2) The semiconductor device according to claim 1, wherein the dielectric has a switching voltage of 100 to 200V. (3) The semiconductor device according to claim 1 or 2, wherein the package is a TO-92 package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18399385U JPS6291456U (en) | 1985-11-28 | 1985-11-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18399385U JPS6291456U (en) | 1985-11-28 | 1985-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6291456U true JPS6291456U (en) | 1987-06-11 |
Family
ID=31131244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18399385U Pending JPS6291456U (en) | 1985-11-28 | 1985-11-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6291456U (en) |
-
1985
- 1985-11-28 JP JP18399385U patent/JPS6291456U/ja active Pending
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