JPS6289216A - Magnetic storage body - Google Patents
Magnetic storage bodyInfo
- Publication number
- JPS6289216A JPS6289216A JP23017485A JP23017485A JPS6289216A JP S6289216 A JPS6289216 A JP S6289216A JP 23017485 A JP23017485 A JP 23017485A JP 23017485 A JP23017485 A JP 23017485A JP S6289216 A JPS6289216 A JP S6289216A
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- Prior art keywords
- thin film
- film
- polymer
- thin
- carbon
- Prior art date
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Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁気的記録装置(磁気ディスク装置、磁気ド
ラム装置及び磁気テープ装置等)に用いられる磁気記憶
体(以下記憶体と呼ぶ)に関し、詳しくは、記憶体の金
属磁性薄膜媒体(以下金属媒体と呼ぶ)上の保護膜に関
する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a magnetic storage body (hereinafter referred to as a storage body) used in a magnetic recording device (magnetic disk device, magnetic drum device, magnetic tape device, etc.). Specifically, the present invention relates to a protective film on a metal magnetic thin film medium (hereinafter referred to as metal medium) of a storage body.
本発明は、金属媒体上に酸化物、窒化物、炭化物及び炭
素から選ばれる少なくとも1種以上の物質より成る薄膜
から被覆された記憶体に於いて、更にその表面に、少な
くともイミド基を有する高分子薄膜を被覆せしめること
により、記憶体と記録再生ヘッド(以下ヘッドと呼ぶ)
間の摩擦係数を著るしく低下させる事により記憶体の機
械的信頼性を高めると同時に、金属媒体上に、性質の異
なる無機と有機の被膜の積層することにより防食効果を
飛躍的に向上させたものである。The present invention provides a memory body in which a metal medium is coated with a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon, and the surface of the memory body is further provided with a polymer having at least an imide group. By coating with a molecular thin film, a memory body and a recording/reproducing head (hereinafter referred to as a head) can be created.
At the same time, by significantly lowering the coefficient of friction between metal media, the mechanical reliability of the memory medium is increased, and at the same time, the anti-corrosion effect is dramatically improved by laminating inorganic and organic films with different properties on the metal medium. It is something that
金属媒体を有する記憶体に於いては、ヘッドとの接触に
耐えるだけの充分な機械的信頼性と金属媒体を摩食から
守る耐食性を有する保護膜を被覆せしめる事が必須であ
る。In a storage medium having a metal medium, it is essential to coat the storage medium with a protective film having sufficient mechanical reliability to withstand contact with the head and corrosion resistance to protect the metal medium from abrasion.
従来、Rh、C!r、N1−P、Au等の金属層を保護
膜として被覆する事が、特公昭47−49603、同4
B−14241,同4B−418,81、同55−62
57.特開昭53−73j08、同5B−26520等
で提案されているが、記憶体の耐食性を充分に確保する
には、該金属層の厚みを1oooK以上にせねばならず
、又機械的信頼性は極めて低いものである。又特公昭4
9−29445、同52−17402.同5B−576
16、特開昭57−117126等に湿式、乾式両表面
処理法による酸化物層の形成が提案されているが、該表
面処理法により、金属磁性薄膜媒体の磁気特性が変化し
、又得られた磁気記憶体の機械的信頼性及び耐食性も不
充分であった。又特公昭49−26565.同50−5
0445.同51−15967、同52−18001.
同54−29242.同54−34602.同55−2
9500、同57−40565.同57−58731、
同58−57614.同5B−37615、特開昭51
−47401.同51−1484061同55−108
930.同57−1471!+3、同57−18933
9.同58−155654、同5B−108030等の
酸化物膜そして、特公昭55−59047.特開昭55
−75931、同58−179938.同58−179
939、同58−179940等の多種化合物膜は、潤
滑性に劣り、又耐食性を確保するには、やはり1000
^厚以上の膜厚にせねばならなかった。Conventionally, Rh, C! Covering with a metal layer such as r, N1-P, Au, etc. as a protective film is disclosed in Japanese Patent Publications No. 47-49603 and No. 4
B-14241, 4B-418, 81, 55-62
57. This has been proposed in JP-A-53-73J08 and JP-A-5B-26520, etc., but in order to ensure sufficient corrosion resistance of the memory body, the thickness of the metal layer must be 1oooK or more, and the mechanical reliability is This is extremely low. Mata Tokko Sho 4
9-29445, 52-17402. 5B-576
16. Formation of an oxide layer by both wet and dry surface treatment methods has been proposed in JP-A-57-117126, etc., but these surface treatment methods change the magnetic properties of the metal magnetic thin film medium and cannot be obtained. The mechanical reliability and corrosion resistance of the magnetic memory were also insufficient. Also, Special Publication Showa 49-26565. 50-5
0445. 51-15967, 52-18001.
54-29242. 54-34602. 55-2
9500, 57-40565. 57-58731,
58-57614. 5B-37615, Japanese Unexamined Patent Application Publication No. 1973
-47401. 51-1484061 55-108
930. Same 57-1471! +3, 57-18933
9. Oxide films such as No. 58-155654 and No. 5B-108030, and Japanese Patent Publication No. 55-59047. Unexamined Japanese Patent Publication 1973
-75931, 58-179938. 58-179
939, 58-179940, etc., have poor lubricity, and in order to ensure corrosion resistance, 1000
I had to make the film thicker than ^thick.
又特開昭57−152517の二価フェノール等の防錆
剤は、初期の防食性効果を長期に渡り維持する事が困難
であった。他方、潤滑膜として特公昭54−3552’
l、特開昭53−1432[)6、同56−4j524
の炭素質膜は)他の保護膜にくらべ、優れた潤滑性を示
し、記憶体の機械的信頼性を高めたものの、ヘッドと記
憶体との接触を繰り返すことにより、該ヘッドと記ta
体との静摩擦係数が増大しついには、記憶体の回転スピ
ンドルモーターが停止する。いわゆるリンギング現象を
起こし又ピンホールの発生も多く、防食効果がなかった
。又表面化学第5巻第4号(1984)P78〜P84
及び特開昭59−168952、同59−171.02
6.同59−171027にポリイミドのスパッタリン
グによる被膜についての発表があるが、これは、ヘッド
との摩擦係数は低いものの、長期の機械的信頼性と防食
効果がまだ不充分なものであった。Furthermore, it was difficult for the anticorrosive agent such as dihydric phenol disclosed in JP-A-57-152517 to maintain its initial anticorrosive effect over a long period of time. On the other hand, as a lubricating film,
l, JP-A-53-1432[)6, JP-A-56-4j524
Although the carbonaceous film shown in Fig. 1 shows superior lubricity compared to other protective films and improves the mechanical reliability of the memory element, repeated contact between the head and the memory element causes damage to the head and the memory element.
The coefficient of static friction with the body increases and eventually the rotating spindle motor of the storage body stops. A so-called ringing phenomenon occurred, many pinholes were formed, and there was no anti-corrosion effect. Also Surface Chemistry Vol. 5 No. 4 (1984) P78-P84
and JP-A No. 59-168952, No. 59-171.02
6. No. 59-171027, there is a publication on a polyimide coating formed by sputtering, but although this has a low coefficient of friction with the head, its long-term mechanical reliability and anti-corrosion effects are still insufficient.
上述の如〈従来技術では、記憶体とヘッドとの接触によ
る記憶体とヘッドの物理的劣化及びリンギング現象、そ
して記憶体の金属媒体の耐食性を充分に確保出来ないと
いう問題を有する。As described above, the prior art has the problems of physical deterioration and ringing phenomenon of the storage body and head due to contact between the storage body and head, and failure to ensure sufficient corrosion resistance of the metal medium of the storage body.
そこで本発明はこの様な問題点を解決するもので、その
目的とするところは、酸化物、窒化物。Therefore, the present invention is intended to solve these problems, and its purpose is to treat oxides and nitrides.
炭化物及び炭素より選ばれる少なくとも1種の物質より
成る薄膜の保護膜の耐食性を改善するとともにヘッドと
の摩擦係数を改善し、長期信頼性に優れた金属媒体を有
する記憶体を提供するところにある。The purpose of the present invention is to provide a storage medium having a metal medium that improves the corrosion resistance of a thin protective film made of at least one substance selected from carbide and carbon, improves the coefficient of friction with the head, and has excellent long-term reliability. .
本発明の記憶体は、基体上に金属媒体を形成した後、O
r、Ti、Ta、Wbから選ばれる少なくとも1種の物
質よりなる被膜の形成の有無に於いて、酸化物、窒化物
、炭化物及び炭素より選ばれる少なくとも1種の物質よ
り成る薄膜を形成し、更に該薄膜の表面に少なくともイ
ミド基を有する高分子薄膜を被覆せしめた事を特徴とす
る。In the storage body of the present invention, after forming a metal medium on a base, O
Forming a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon, with or without forming a film made of at least one substance selected from r, Ti, Ta, and Wb; A further feature is that the surface of the thin film is coated with a polymer thin film having at least an imide group.
Or、Ti、Ta、Nbは、金属媒体と、酸化物、窒化
物、炭化物及び炭素間の密着性をより確かにする目的で
被覆し、その膜厚は、50〜200久で充分である。Or, Ti, Ta, and Nb are coated for the purpose of ensuring the adhesion between the metal medium and oxides, nitrides, carbides, and carbon, and a film thickness of 50 to 200 mm is sufficient.
酸化物は、S i O□、 T i 02 、 Or
203 等、窒化物はTiN 、Ta2N 、AtN
、Si、N4等、炭化物は、SiO、TiO等、炭素
は、ダイヤモンド状、グラファイト状、アモルファス状
のいずれでも良く、膜厚は、150λ〜800^形成す
る。以上は、真空蒸着法、スパッタリング法、イオンブ
レーティング法やCVD法のいずれの方法でも形成可能
である。The oxides are S i O□, T i 02 , Or
203 etc., nitrides are TiN, Ta2N, AtN
, Si, N4, etc. The carbide may be SiO, TiO, etc. Carbon may be diamond-like, graphite-like, or amorphous, and the film thickness is 150λ to 800λ. The above can be formed by any method such as vacuum evaporation method, sputtering method, ion blating method, or CVD method.
次にイミド基を有する高分子薄膜は、ポリイミド、ポリ
イミドアミy、ポリイミドアミンから選ばれる少なくと
も1種の高分子体をターゲットとしてスパッタリング法
等で形成するものであり、更に該高分子体に弗素樹脂、
MoB2 、WS、。Next, the polymer thin film having imide groups is formed by a sputtering method using at least one type of polymer selected from polyimide, polyimide amine, and polyimide amine as a target, and a fluororesin is further added to the polymer. ,
MoB2, WS,.
B 27 、炭素から選ばれる少なくとも1種の物質を
含有せしめた場合、得られた高分子薄膜とヘッドとの摩
擦係数は更に低下し、より望ましい。懸方モノマーやプ
リざリマーを塗布、焼成することによりイミド基を有す
る高分子薄膜を形成しても良く、材料は市販品も多く、
例えばトレニース 2000、A’P400(東し)、
DA−5ND(目星化学)等であり、適切な溶媒で濃度
を調節し、スピンコード法、スプレー法9等速引き上げ
法の既知の方法で塗布し、150〜230℃で、1時間
〜5時間焼成する。いずれの方法でも、膜厚は100〜
500Xが適肖である。When at least one substance selected from B 27 and carbon is contained, the coefficient of friction between the obtained thin polymer film and the head is further reduced, which is more desirable. A thin polymer film containing imide groups may be formed by coating and baking a hanging monomer or pre-thalimer, and there are many commercially available materials.
For example, Trenice 2000, A'P400 (East),
DA-5ND (Musei Kagaku) etc., adjust the concentration with an appropriate solvent, apply by a known method such as spin code method, spray method, 9 uniform velocity pulling method, and heat at 150 to 230 ° C. for 1 hour to 5 days. Bake for an hour. In either method, the film thickness is 100~
500X is suitable.
本発明の上記の構成によれば、金属媒体の上に防食効果
、膜の硬度に優れ、又摩擦係数の低い、酸化物、窒化物
、炭化物、炭素から選ばれる少なくとも1種の物質より
成る薄膜が形成されるが、該薄膜の戻欠陥が発生し製造
工程上、該欠陥を皆無にすることは不可能である。そこ
で、該薄膜とまったく性質の異なるイミド基を有する高
分子薄膜を更に被覆することにより、保護瞑を積層化し
、欠陥の発生を極力少なくする事が可能になり、金属媒
体を水分等の摩食環境から守る一方、イミド基を有する
高分子薄膜の下層に高硬度膜をル成する事により、該高
分子薄膜とヘッド間の機械的信頼性が飛躍的に向上した
。According to the above configuration of the present invention, a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon, which has an excellent anticorrosive effect, excellent film hardness, and a low coefficient of friction, is formed on the metal medium. However, a return defect occurs in the thin film, and it is impossible to completely eliminate the defect due to the manufacturing process. Therefore, by further covering the thin film with a polymer thin film having an imide group that has completely different properties from the thin film, it is possible to layer the protective film and minimize the occurrence of defects, and the metal medium can be protected against wear due to moisture etc. While providing protection from the environment, by forming a highly hard film under the polymer thin film containing imide groups, the mechanical reliability between the polymer thin film and the head has been dramatically improved.
〔実施例1〕
鏡面仕上げされたディスク状アルミニウム合金基板上に
非磁性合金メッキとしてNiP合金メッキを約20μ溝
の厚さにメッキ後、研摩により15μmの厚さ、表面粗
さ[103μm以下にし、更に金属磁性薄膜としてCo
−N1−P合金を約Q、07μm厚にメッキした。[Example 1] After plating NiP alloy plating as non-magnetic alloy plating on a mirror-finished disc-shaped aluminum alloy substrate to a thickness of about 20 μm, polishing the plate to a thickness of 15 μm and a surface roughness of 103 μm or less, Furthermore, as a metal magnetic thin film, Co
-N1-P alloy was plated to a thickness of approximately Q, 07 μm.
次にマグネトロンスパッタ装置で、Crを100^、S
in、を5ooK連続して形成した。Next, using a magnetron sputtering device, 100^ of Cr and S
in, was formed continuously for 5ooK.
更にカプトンをターゲットとして、下記スパッタ条件で
、ポリイミド薄膜を200久形成した。Furthermore, using Kapton as a target, a polyimide thin film was formed for 200 years under the following sputtering conditions.
〔実施例2〕
実施例1と同様にして金属媒体を有するディスクを作製
した。[Example 2] A disk having a metal medium was produced in the same manner as in Example 1.
次にマグネトロンスパッタ装置で、T1を50^、炭素
質膜(アモルファス状)を4001形成更にTニー21
30ポリマー(東し)をターゲットとして下記スパッタ
条件で、炭素lMoS2、弗素樹脂含有のイミドアミン
薄膜を300久形成した。Next, with a magnetron sputtering device, a T1 of 50^ and a carbonaceous film (amorphous) of 4001 were formed, and a T knee of 21
An imidoamine thin film containing carbon lMoS2 and fluororesin was formed for 300 years under the following sputtering conditions using No. 30 polymer (TOSHI) as a target.
〔実施例5〕
研摩されたN1−P合金メッキディスク基板に、マグネ
トロンスパッタ装置でOrを5ooX。[Example 5] 5ooX of Or was applied to a polished N1-P alloy plated disk substrate using a magnetron sputtering device.
いで、Cr O−N i −Or合金(co、−30a
t。Then, Cr O-N i -Or alloy (co, -30a
t.
% N i 、−7,5at、%Or )を900久、
更にTiNを300X形成した。%N i , -7.5at, %Or ) for 900 years,
Further, 300X TiN was formed.
スパッタ中は、酸素分圧を8 X 10−’torr以
下に保ち、上記3Nを連続形成した。During sputtering, the oxygen partial pressure was maintained at 8×10 −'torr or less, and the above 3N was continuously formed.
更に実施例2同様にイミドアミン薄膜を500又形成し
た。Furthermore, 500 imidoamine thin films were formed in the same manner as in Example 2.
〔実施例4〕 実施例1同様の金属媒体を有するディスクを作製した。[Example 4] A disk having a metal medium similar to that in Example 1 was produced.
テトラメトキシシランをブタノールに希釈した後、(1
−M)酢酸を添加し加分分解液とした。After diluting tetramethoxysilane in butanol, (1
-M) Acetic acid was added to obtain a hydrolyzed solution.
(固形分濃度はSiOとして計算して0.5%%
とした。)
スピンコード法により(ディスク片面づつ)、ディスク
表面全体に上記の加水分解液を滴下し、11000rp
で20秒間回転し、65℃で10分間予備焼成を行った
。(The solid content concentration was calculated as SiO and was set to 0.5%.) The above hydrolyzed solution was dripped onto the entire disk surface using the spin code method (one side of the disk at a time), and the solution was heated at 11,000 rpm.
The sample was rotated for 20 seconds and pre-baked at 65°C for 10 minutes.
次にDA−5NDの0.01%希釈液を上記同様にスピ
ンコード法で塗布した後、200℃で2時間、本焼成を
行なうことにより、ポリケイ酸被膜を6ooi、ポリイ
ミド被膜を200久形成した〔実施例5〕
実施例1同様の金属媒体を有するディスクを作製した。Next, a 0.01% diluted solution of DA-5ND was applied using the spin code method in the same manner as above, and then main firing was performed at 200°C for 2 hours to form a polysilicate film of 600m and a polyimide film of 200m. [Example 5] A disk having a metal medium similar to that in Example 1 was produced.
次にマグネトロンスパッタ装置を用い、Taを100^
、Tag!を500に形成した後、実施例2同様のスパ
ッタ条件で、T工1100ポリマー(東し)を500久
形成した。Next, using a magnetron sputtering device, Ta was added to 100^
, Tag! After forming 500 ml of T-1100 polymer (Toshi) under the same sputtering conditions as in Example 2, 500 ml of T-1100 polymer (Toshi) was formed.
尚、実施例中で、イミド基を有する高分子薄膜を被覆し
たディスクを比較品として作製し品質評価を同時に行な
った。In the examples, a disk coated with a polymer thin film having an imide group was prepared as a comparative product and quality evaluation was performed at the same time.
比較例
実施例1に於いて、OrとSin、の形成を除くかたち
で、金属媒体上に直接ポリイミド薄膜を200人形成し
た。Comparative Example In Example 1, 200 people formed a polyimide thin film directly on a metal medium except for the formation of Or and Sin.
以上の実施例、比較例で述べたディスクの品質評価を、
aSS試験と耐湿試験で行りた。aSS試験では、静摩
擦係数と出力の低下率を求め、耐湿試験は、80℃、8
0%R,Hの環境にディスクを放置し、放置時間の経過
を追って、ミッシングピット数を確認し、その増加した
時点を寿命とした。The quality evaluation of the disc described in the above examples and comparative examples is as follows:
ASS test and moisture resistance test were conducted. In the aSS test, the coefficient of static friction and the rate of decrease in output were determined, and the humidity test was conducted at 80℃, 8
The disk was left in an environment of 0% R, H, and the number of missing pits was checked over time, and the time when the number of missing pits increased was defined as the end of the service life.
以上述べた様に本発明によれば、よりU膜で、機械的信
頼性と耐食性を充分に確保した高密度記録対応のディス
クの提供が可能になった。As described above, according to the present invention, it has become possible to provide a disk compatible with high-density recording that has sufficient mechanical reliability and corrosion resistance using a U film.
尚、本発明は、基板がプラスチックであるフロッピーデ
ィスクや磁気テープ類そして、光磁気ディスクにも適用
可能であり、その他、ガラス等、基板の材質は実施例に
とられれるものではない。The present invention is also applicable to floppy disks, magnetic tapes, and magneto-optical disks in which the substrate is made of plastic, and the material of the substrate, such as glass, is not limited to the embodiments.
以 上that's all
Claims (4)
属磁性薄膜媒体上に酸化物、窒化物、炭化物及び炭素か
ら選ばれる少なくとも1種の物質より成る薄膜が被覆さ
れ、更に該薄膜の表面に少なくともイミド基を有する高
分子薄膜を被覆せしめた事を特徴とする磁気記憶体。(1) A metal magnetic thin film medium is coated on the substrate, a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon is coated on the metal magnetic thin film medium, and 1. A magnetic memory characterized in that its surface is coated with a thin polymer film having at least an imide group.
炭素から選ばれる少なくとも1種の物質より成る薄膜と
の間にCr、Ti、Ta、Nbから選ばれる少なくとも
1種の物質よりなる被膜が形成せしめられた事を特徴と
する特許請求の範囲第1項記載の磁気記憶体。(2) A coating made of at least one substance selected from Cr, Ti, Ta, and Nb between the metal magnetic thin film medium and a thin film made of at least one substance selected from oxides, nitrides, carbides, and carbon. 2. A magnetic storage body according to claim 1, characterized in that said magnetic storage body is formed with:.
イミドアミド、及びポリイミドアミンから選ばれる少な
くとも1種の高分子体より成る事を特徴とする特許請求
の範囲第1項又は第2項記載の磁気記憶体。(3) The magnetism according to claim 1 or 2, wherein the polymer thin film having imide groups is made of at least one polymer selected from polyimide, polyimide amide, and polyimide amine. Memory body.
S_2、WS_2、BN、炭素から選ばれる少なくとも
1種の物質を含有する事を特徴とする特許請求の範囲第
1項又は第2項記載の磁気記憶体。(4) The polymer thin film having imide groups is made of fluororesin, Mo
The magnetic memory according to claim 1 or 2, characterized in that it contains at least one substance selected from S_2, WS_2, BN, and carbon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23017485A JPS6289216A (en) | 1985-10-16 | 1985-10-16 | Magnetic storage body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23017485A JPS6289216A (en) | 1985-10-16 | 1985-10-16 | Magnetic storage body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6289216A true JPS6289216A (en) | 1987-04-23 |
Family
ID=16903766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23017485A Pending JPS6289216A (en) | 1985-10-16 | 1985-10-16 | Magnetic storage body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6289216A (en) |
-
1985
- 1985-10-16 JP JP23017485A patent/JPS6289216A/en active Pending
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