JPS6288345A - Plastic sealed solid state image sensor - Google Patents

Plastic sealed solid state image sensor

Info

Publication number
JPS6288345A
JPS6288345A JP60229272A JP22927285A JPS6288345A JP S6288345 A JPS6288345 A JP S6288345A JP 60229272 A JP60229272 A JP 60229272A JP 22927285 A JP22927285 A JP 22927285A JP S6288345 A JPS6288345 A JP S6288345A
Authority
JP
Japan
Prior art keywords
epoxy
image sensor
state image
bonded
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60229272A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP60229272A priority Critical patent/JPS6288345A/en
Publication of JPS6288345A publication Critical patent/JPS6288345A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To form a solid state image sensor at a low cost, by using a sealing method of a plastic sealed structure in sealing the solid state image sensor. CONSTITUTION:On an epoxy substrate 1, a lead frame 2 comprising aluminum clad iron is bonded with an epoxy bonding agent 3. A solid state image sensor chip 5 is bonded to a part of the lead frame with an epoxy conductivity type bonding agent 4. Aluminum wire 6 is bonded with ultrasonic waves for wiring the chip 5 and the lead frame 2. A cap 7 comprising an epoxy material is further bonded to the surfaces of the epoxy substrate 1 and the lead frame 2 with the epoxy bonding agent 3. A transparent window 8 comprising glass, acrylic material, hard coated plastic or the like is bonded to the surface of the epoxy cap 7 with the bonding agent 3 such as the epoxy bonding agent.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は固体イメージ・センサーの封止構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a sealing structure for a solid-state image sensor.

［発明の概要〕 本発明は、プラスチック封止固体イメージ・センサーに
関し、エポキシ基板にはリード・フレームが接着され、
該リード・フレームには固体イメージ・センサー、ワイ
ヤー配線及びエポキシ・キャップ等が接着され、該エポ
キシ・キャップにはガラス捷たはプラスチックから成る
透明窓が接着されて成ることを特徴とする。[Summary of the Invention] The present invention relates to a plastic-encapsulated solid-state image sensor, in which a lead frame is bonded to an epoxy substrate;
A solid-state image sensor, wire wiring, an epoxy cap, etc. are bonded to the lead frame, and a transparent window made of glass or plastic is bonded to the epoxy cap.

〔従来の技術〕[Conventional technology]

従来、固体イメージ・センサーの封止構造は、一般にセ
ラミック・パッケージと呼ばれるセラミック基板に配線
、リード付けされたパッケージ内に固体イメージ・セン
サーを接着し、透明窓としてガラス窓ｅセラミック・パ
ッケージに低融点ガラス等で接着するのが通例であった
。Conventionally, the sealing structure for solid-state image sensors has been to bond the solid-state image sensor inside a package that is wired and leaded to a ceramic substrate, generally called a ceramic package, and to attach a low-melting-point glass window to the ceramic package as a transparent window. It was customary to bond with glass or the like.

〔発明が解決しようとする問題点及び目的〕しかし、上
記従来技術によると、セラミック原材斜方高価な事、セ
ラミック焼成等の熱処理に高温を要し、エネルギー・コ
ストがかさむ事、及び部品点数が多い事等から高コスト
につくという問題点があった。[Problems and objects to be solved by the invention] However, according to the above-mentioned prior art, ceramic raw materials are expensive, high temperatures are required for heat treatment such as ceramic firing, which increases energy costs, and the number of parts is high. There was a problem in that the cost was high due to the large number of

本発明は、かかる従来技術の問題点をなくし、低コスト
の固体イメージ・センサーを提供できる封止構造を提案
することを目的 〔問題点を解決するための手段〕 上記問題点を解決するための本発明の基本的な構成は、
いわゆるプラスチック封止構造体を固体イメージ・セン
サーの封正に提供する手段をとる。The purpose of the present invention is to eliminate the problems of the prior art and to propose a sealing structure that can provide a low-cost solid-state image sensor. The basic configuration of the present invention is:
Measures are taken to provide so-called plastic encapsulation structures for the encapsulation of solid-state image sensors.

〔実施例〕〔Example〕

以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

第１図は不発明の一実施例を示すプラスチック封止固体
イメージ・センサーの断面図である。すなわち、エポキ
シ製の基板１上にはアルミ・クラッド鉄から成るリード
・フレーム２がエポキシ系接着剤５によシ接着され、前
記リード・フレームの一部には、固体イメージ・センサ
ー・チップ５がエポキシ系導電性接着剤４により接着さ
れると共に、アルミ・ワイヤー６がチップ５とリード・
フレーム２との配線の為に超音波ボンディングされて成
る。更に、エボーＰ７材から成るギロツブ７がエポキシ
系接着剤５によりエポキシ基板１及びリード・フレーム
２の表面に接着され、前記エポキシ・キャップ７の表面
には、ガラス又はアクリルあるいは、ハード・コートし
たプラスチック等から成る透明窓８がエポキシ系接着剤
等の接着剤５により接着されて成る。尚、リード・フレ
ーム２の外部リード線はニッケル・メッキ後、半田メン
キされてプリント基板への半田付けを容易ならしめてい
る。FIG. 1 is a cross-sectional view of a plastic-encapsulated solid-state image sensor showing one embodiment of the invention. That is, a lead frame 2 made of aluminum clad iron is adhered to a substrate 1 made of epoxy using an epoxy adhesive 5, and a solid-state image sensor chip 5 is attached to a part of the lead frame. At the same time, the aluminum wire 6 is bonded with the chip 5 and the leads.
Ultrasonic bonding is performed for wiring with frame 2. Further, a gilt 7 made of EBO P7 material is adhered to the surfaces of the epoxy board 1 and the lead frame 2 with an epoxy adhesive 5, and the surface of the epoxy cap 7 is coated with glass, acrylic, or hard-coated plastic. A transparent window 8 consisting of the like is bonded with an adhesive 5 such as an epoxy adhesive. The external lead wires of the lead frame 2 are nickel plated and then soldered to facilitate soldering to the printed circuit board.

〔発明の効果〕〔Effect of the invention〕

本発明の如く、プラスチック封止固体イメージセンサ−
構造では （１）　　プラスチック材のコストが低廉（２）　　プ
ラスチック成形時の熱処理温度が低く、エネルギーコス
トが低廉 （３）封着時に合成樹脂系接着剤を用いると、常温での
接着、硬化も可能となり、エネルギーコストが低廉 ＋４１　　有機性（ゼラチン等〕カラー・フィルターを
用いたカラー・イメージ・センサーの封正に本構造を用
いると、高温処理が無い為に、カラー・フィルターの熱
による光学特性劣化が全く起らない。As in the present invention, a plastic encapsulated solid state image sensor
In terms of structure, (1) the cost of plastic materials is low (2) the heat treatment temperature during plastic molding is low, resulting in low energy costs (3) if a synthetic resin adhesive is used during sealing, it is possible to bond and harden at room temperature. Therefore, the energy cost is low +41 When this structure is used to encapsulate a color image sensor using an organic (gelatin, etc.) color filter, there is no high temperature treatment, so the optical characteristics of the color filter will not deteriorate due to heat. does not occur at all.

等の効果がある。There are other effects.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示すプラスチック封止固体
イメージ・センサーの断面図である。 １・・・エポキシ基板 ２・・・１１−ド・フレーム ３・・・接着剤 ル・・・チップ接着剤 ５・・・イメージ・センサー ６・・・ワイヤー ７・・・エポキシ・キャップ ８・・・透明窓 以　　　上FIG. 1 is a cross-sectional view of a plastic-encapsulated solid-state image sensor showing one embodiment of the present invention. 1... Epoxy board 2... 11-board frame 3... Adhesive line... Chip adhesive 5... Image sensor 6... Wire 7... Epoxy cap 8...・More than transparent window

Claims (1)

【特許請求の範囲】[Claims] エポキシ基板にはリード・フレームが接着されており、
該リード・フレームには固体イメージ・センサー、ワイ
ヤー配線、及びエポキシ・キャップ等が接着されており
、該エポキシ・キャップにはガラスまたはプラスチック
から成る透明窓が接着されていることを特徴とするプラ
スチック封止固体イメージセンサー。A lead frame is glued to the epoxy board.
A solid-state image sensor, wire wiring, an epoxy cap, etc. are bonded to the lead frame, and a transparent window made of glass or plastic is bonded to the epoxy cap. Solid-state image sensor.
JP60229272A 1985-10-15 1985-10-15 Plastic sealed solid state image sensor Pending JPS6288345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60229272A JPS6288345A (en) 1985-10-15 1985-10-15 Plastic sealed solid state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60229272A JPS6288345A (en) 1985-10-15 1985-10-15 Plastic sealed solid state image sensor

Publications (1)

Publication Number Publication Date
JPS6288345A true JPS6288345A (en) 1987-04-22

Family

ID=16889510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60229272A Pending JPS6288345A (en) 1985-10-15 1985-10-15 Plastic sealed solid state image sensor

Country Status (1)

Country Link
JP (1) JPS6288345A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5140384A (en) * 1990-06-14 1992-08-18 Rohm Co., Ltd. Semiconductor laser device mounted on a stem
US5982038A (en) * 1997-05-01 1999-11-09 International Business Machines Corporation Cast metal seal for semiconductor substrates
JP2010086595A (en) * 2008-09-30 2010-04-15 Alps Electric Co Ltd Magnetic disk device
US20120112042A1 (en) * 1999-12-08 2012-05-10 Amkor Technology, Inc. Molded image sensor package and method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5140384A (en) * 1990-06-14 1992-08-18 Rohm Co., Ltd. Semiconductor laser device mounted on a stem
US5982038A (en) * 1997-05-01 1999-11-09 International Business Machines Corporation Cast metal seal for semiconductor substrates
US20120112042A1 (en) * 1999-12-08 2012-05-10 Amkor Technology, Inc. Molded image sensor package and method
US8994860B2 (en) * 1999-12-08 2015-03-31 Amkor, Technology, Inc. Molded image sensor package and method
US9735191B2 (en) 1999-12-08 2017-08-15 Amkor Technology, Inc. Molded semiconductor package
JP2010086595A (en) * 2008-09-30 2010-04-15 Alps Electric Co Ltd Magnetic disk device
US8107185B2 (en) 2008-09-30 2012-01-31 Alps Electronics Co., Ltd. Magnetic disk device including a sensor in a case

Similar Documents

Publication Publication Date Title
JPS6288345A (en) Plastic sealed solid state image sensor
JPH02126685A (en) Solid-state image sensor
JPS62273768A (en) Solid-state image sensing device
JP2668995B2 (en) Semiconductor device
JPH05182999A (en) Semiconductor device
JP2906673B2 (en) Semiconductor device
JPS6086973A (en) Solid-state image pickup device
JPS62131555A (en) Semiconductor integrated circuit device
JPH05183072A (en) Semiconductor device
JPS6293976A (en) Resin sealed solid state image sensor
JPH01282846A (en) Hybrid integrated circuit
JPH025553A (en) Semiconductor device
JPS58139462A (en) Solid-stage image pickup element
JPH05259483A (en) Semiconductor package for photoelectric conversion
JPH04179152A (en) Integrated circuit device
JPS6345842A (en) Plastic package
JPH0287654A (en) Surface mounting semiconductor device
JPH01173747A (en) Resin-sealed semiconductor device
JPH05183071A (en) Semiconductor device
JPS6218737A (en) Ceramic package for semiconductor device
JPS6237949A (en) Electronic-part mounting package
JPH05335534A (en) Optical semiconductor device
JP2740161B2 (en) Integrated circuit mounting structure
JPS62241353A (en) Solid-state image sensor
JPS5984557A (en) Package for multilayer chip carrier