JPS6281736A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6281736A
JPS6281736A JP22336085A JP22336085A JPS6281736A JP S6281736 A JPS6281736 A JP S6281736A JP 22336085 A JP22336085 A JP 22336085A JP 22336085 A JP22336085 A JP 22336085A JP S6281736 A JPS6281736 A JP S6281736A
Authority
JP
Japan
Prior art keywords
semiconductor device
cooling
package
cooling fin
piezoelectric element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22336085A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Saito
和敬 斎藤
Nobuo Iwase
岩瀬 暢男
Chiaki Tanuma
千秋 田沼
Tomio Ono
富男 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22336085A priority Critical patent/JPS6281736A/en
Publication of JPS6281736A publication Critical patent/JPS6281736A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To cool the respective package constituting a semiconductor device with extreme efficiency by disposing a cooling fin having a plurality of wings in the package of a semiconductor (chip) device having a large heat release amount, and simultaneously disposing a cooling fin between the wings of the cooling fin, thereby obtaining a highly efficient cooling apparatus. CONSTITUTION:The semiconductor device is composed by causing a cooling apparatus c to be adhered to the reverse side of the base 1a of a package consisting of aluminium nitride ceramics by means of an adhesive q composed of an epoxy resin, said cooling apparatus c consisting of a cooling fin 2 which has a comb-shaped cross section and is provided with four static wing f consisting of an aluminium plate-like body disposed with a predetermined spacing therebetween and in parallel with each other, and a cooling fin 3 disposed between static wings f. This fin 3 is provided with a brass dynamic wing 3c which is driven by a piezoelectric element 3b, and the heat is dissipated by applying a voltage of an appropriate frequency from a power supply line 3d to the piezoelectric element 3b (bimorph) so as to cause it to oscillate, which piezoelectric element is formed by stacking two piezoelectric bodies composed of lead titanate + lead zirconate + (alpha).

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体装置に係り、特に発熱量の大きい電子(
回路)素子のパッケージの冷加方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device, and particularly relates to a semiconductor device that generates a large amount of heat (e.g.
This invention relates to a method for cooling a package of a circuit (circuit) element.

(発明の技術的青用とその問題点〕 半導体デクノロジーの進歩と共に、電子計Q機等の電子
装bsb急速な発達をとげている。
(Technical applications of inventions and their problems) Along with advances in semiconductor technology, electronic equipment such as Q-meters and other BSB electronic devices are rapidly developing.

例えば、電子計amにおいては、通常複数の電子部品を
搭載した電子回路パッケージが一枚のプリント配線板に
複数枚実装されている。これらのパッケージは発熱を伴
うため従来はプリン1−配線板全体を送+nによって強
制冷l、IIするという方法で各パッケージを一様な風
速で冷却するようにしていた。この方法は、各パッケー
ジの発熱量がは(、■同一であってプリント配線板上の
発熱密度もほぼ均一とみなすことができた従来の電子3
1算機では、有効なものであった。
For example, in an electronic meter (AM), a plurality of electronic circuit packages each carrying a plurality of electronic components are usually mounted on a single printed wiring board. Since these packages generate heat, conventionally, each package was cooled at a uniform wind speed by forcing the entire printed wiring board to be cooled by blowing +n. This method differs from conventional electronic 3
It was effective on a single calculator.

しかし、論理素子等の集積化および電子部品の高密度実
装が可能となるにつれ、プリント配線板上には、発熱量
が特に大ぎい電子回路パッケージも混じって使用される
ことの多い現在の電子計算機では、新たな問題を生じて
きている。
However, as it becomes possible to integrate logic elements, etc. and to implement high-density mounting of electronic components, today's electronic computers often include electronic circuit packages that generate a particularly large amount of heat on printed wiring boards. Now, a new problem has arisen.

すなわら、高発熱量部品を規定温度以下に維持するため
には、供給する風速を大きくする必要がある。しかしな
がら、風速を高発熱量部品のレベルに合わせて大きくす
ると、低発熱量部品に対しては過剰冷却となる上、送風
機を大型にする必要があり、騒音が増大する等、種々の
問題があった。
That is, in order to maintain a high heat generating component at a specified temperature or lower, it is necessary to increase the supplied air speed. However, increasing the wind speed to match the level of high-heat-generating parts causes various problems such as excessive cooling of low-heat-generating parts and the need for larger blowers, which increases noise. Ta.

そこで、第2図(a)および(b)に示す如く、パッケ
ージ11のベースに冷却フィン12を配設して熱抵抗を
小さくするという構造を採用しているが実装の高密度化
あるいは、電子部品の構造等により冷却フィンを無制限
に大きくすることはできない。
Therefore, as shown in FIGS. 2(a) and 2(b), a structure is adopted in which cooling fins 12 are provided at the base of the package 11 to reduce thermal resistance. The size of the cooling fins cannot be increased indefinitely due to the structure of the parts.

また、高発熱部品と低発熱部品とを分けて配置し、垂直
平根等により送風機からの風量の多くを高発熱部品列に
導入し、高発熱部品列を選択的に冷却する方法(特公昭
60−11840号公報)も提案されてはいるが、この
方法でもやはり、人望送風機を必要とすること、高発熱
部品を整列させる必要があるため配置面での制約が大き
いこと等の問題が残されていた。
Another method is to place high heat generating components and low heat generating components separately, and introduce most of the air volume from the blower into the high heat generating component rows using vertical flat roots, etc., to selectively cool the high heat generating component rows. -11840) has also been proposed, but this method still has problems such as the need for a fan and the need to align high-heating components, which imposes large restrictions on placement. It had been.

〔発明の目的〕[Purpose of the invention]

本発明は、前記実情に鑑みてなされたもので、・局所的
に効率良く冷却することのできる冷却装置を具えた半導
体装置を提供することを目的とする。
The present invention has been made in view of the above-mentioned circumstances, and aims to provide a semiconductor device equipped with a cooling device that can locally and efficiently cool the semiconductor device.

(発明の概要〕 そこで本発明では、発熱量の大きな半導体(チップ)S
!置のパッケージに複数の黄を具えた冷Wフィンを配設
すると共に、該冷却フィンの黄の間に冷却ファンを配設
し、半導体装置からの発生熱を冷却フィンから効果的に
散逸させるようにしている。
(Summary of the Invention) Therefore, in the present invention, a semiconductor (chip) S
! A plurality of yellow cooling fins are disposed in a package of a semiconductor device, and a cooling fan is disposed between the yellow cooling fins, so that the heat generated from the semiconductor device is effectively dissipated from the cooling fins. I have to.

すなわち、半導体チップから発生した熱の大部分はパッ
ケージ(ベース)を通って外気へと散逸するわけである
が、該ベースに取り付けられたフィンにより放熱面積を
大きくし放熱性を高めるようにすると共に、フィンの各
黄門にフィン表面から放散した熱が停滞するのを防ぐべ
く、各翼間に冷lJ1ファンを配設し、停ftRL、た
熱を外気へと逃すようにしている。
In other words, most of the heat generated from the semiconductor chip is dissipated into the outside air through the package (base), but the fins attached to the base increase the heat dissipation area and improve heat dissipation. In order to prevent the heat radiated from the fin surface from stagnation in each yellow gate of the fin, a cooling fan is installed between each blade to release the stagnation heat to the outside air.

(発明の効果〕 本発明によれば、通常の小型冷却フィンと同程度の大き
さで極めて高効率の冷部装置を得ることができ、半導体
装置を構成するパッケージを個別に極めて効率良く冷1
(Iすることができるため、装置全体としての小型化を
はかることがでさると共に、電子装置全体を冷fJIす
る必要がなくなり、人望送風機が不要となる。また、必
要に応じて冷却すれば良く、騒音や省エネルギー化の点
での大幅な改善が可能となる。
(Effects of the Invention) According to the present invention, it is possible to obtain an extremely highly efficient cooling device with a size comparable to that of a normal small cooling fin, and to cool individual packages constituting a semiconductor device extremely efficiently.
(Since it is possible to reduce the size of the entire device, it also eliminates the need to cool the entire electronic device and eliminates the need for a manual blower. This makes it possible to make significant improvements in terms of noise and energy savings.

更に、高発熱部品(半導体装置)が密集している場合に
は、電子装置全体を一様に冷却する送風機と組み合わし
ることにより一層高い放熱効果を得ることができる。
Furthermore, when high heat generating components (semiconductor devices) are crowded together, an even higher heat dissipation effect can be obtained by combining the electronic device with a blower that uniformly cools the entire electronic device.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について図面を参照しつつ詳細に
説明する。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

第1図(a)、(b)および(C)は、夫々、本発明実
施例の半導体装置を示す図である。(第1図(b)およ
び(C)は、夫々第1図(a)のA−△a3よびB−8
断面を示す図である。)この半導体装置は、窒化アルミ
ニウム<AQN)セラミックスからなるパッケージュの
ベース1aの裏面に、所定の間隔を有して互いに平行と
なるように配設された4枚のアルミニウム(AΩ)製の
板状体からなるf’i?l 響fを具えた断面櫛状の冷
Wフィン2と、該静翼fの間に配設された冷却ファン3
とからなる冷部装置Cを1ボキシ樹脂からなる接着剤q
によって被着せしめてなるものである。
FIGS. 1(a), 1(b), and 1(C) are diagrams showing semiconductor devices according to embodiments of the present invention, respectively. (Fig. 1(b) and (C) are A-Δa3 and B-8 of Fig. 1(a), respectively.
FIG. 3 is a diagram showing a cross section. ) This semiconductor device consists of four plates made of aluminum (AΩ) arranged parallel to each other with a predetermined interval on the back side of a base 1a of a package made of aluminum nitride <AQN) ceramics. f'i consisting of body? l A cooling fan 3 disposed between a cooling W fin 2 having a comb-shaped cross section and a stator blade f;
A cold section device C consisting of 1 an adhesive q made of boxy resin
It is coated with

この冷u1ファン3は圧電素子支持台3a取り付けられ
た圧電素子3bによって駆動されるしんらゆう製の板状
体からなる動113Gを具備しており、祭1チタネート
(PbTi03)十鉛ジルコネート(PbZr03 )
+aからなる!、E電体を2枚重ね合わせて形成した圧
電素子3b(バイモルフ)に電源線3dから適当な周波
数の電圧を加え振動させることによって、該動翼3Cが
娠幅約1m、周波数約700H2で往復運動を行なうこ
とにより熱の散逸をはかるものである。
This cooling U1 fan 3 is equipped with a motor 113G made of a plate-like body made of Shinrayu, which is driven by a piezoelectric element 3b attached to a piezoelectric element support 3a. )
Consists of +a! By applying a voltage of an appropriate frequency from the power line 3d to the piezoelectric element 3b (bimorph) formed by stacking two E electric bodies and causing it to vibrate, the rotor blade 3C reciprocates with a sweep width of about 1 m and a frequency of about 700H2. It is designed to dissipate heat through exercise.

また、パッケージュ内は通常の如く、窒化アルミニウム
(AΩN)セラミックスからなるベース1aのキャビテ
ィ部に半導体デツプ4を固着すると共に、ワイヤボンデ
ィング法に」:リフイヤ5を介してリードフレーム6と
半導体デツプ4とを接続した後、アルミナ(AΩ203
)セラミックスからなるキャップ1bを前記ベース1a
に合わせて低融点ガラス7により封止することによって
構成されている。
In addition, inside the package, as usual, the semiconductor depth 4 is fixed to the cavity part of the base 1a made of aluminum nitride (AΩN) ceramics, and the lead frame 6 and the semiconductor depth 4 are connected via the reflier 5 using the wire bonding method. After connecting the alumina (AΩ203
) A cap 1b made of ceramic is attached to the base 1a.
It is constructed by sealing with low melting point glass 7 according to the temperature.

この半導体装置の熱抵抗値(℃/W)′1J′なわら、
内部から1Wの熱が発生した場合の温度の上7Ha(℃
)は15℃/Wであった。
Although the thermal resistance value (℃/W) of this semiconductor device is '1J',
The temperature when 1W of heat is generated from inside is 7Ha (℃
) was 15°C/W.

らなみに通常用いられるアルミナのパッケージにアルミ
ニウムのフィンを取り句け、4m/SのI!11速で冷
IJ] した場合で熱抵抗fMi kl 12°C/ 
W r アリ、本発明ににって4m/sの大j虱吊の送
に1を(1なった場合と同等の熱IIi敗が実j1.!
−rさることになる。
By the way, by adding aluminum fins to the commonly used alumina package, the 4m/s I! Thermal resistance fMi kl 12°C/
W r Ant, according to the present invention, the heat IIi failure equivalent to the case where 1 is reduced to 1 for the transport of large japonicus at 4 m/s (1) is actually j1.!
-r It's going to be a monkey.

次表は送風を行なわない状態での熱抵抗値を、冷rdl
装置(冷u1フィン、冷M+ファン)を全く使用しない
場合と冷却フィンのみを用いた(第2図)の場合と、本
発明の半導体装置とについて、人々、パッケージのベー
スを窒化アルミニウムで構成したしのとアルミナで構成
したものとについて測定したれ一宋は次表に示す如くで
あった。
The following table shows the thermal resistance values without air blowing.
Regarding the case where no equipment (cooling U1 fin, cooling M + fan) is used, the case where only cooling fins are used (Fig. 2), and the semiconductor device of the present invention, people constructed the base of the package with aluminum nitride. The results of measurements made for Shino and those made of alumina were as shown in the following table.

くいずれも送風なし状g3) この表からも明らかなように、本発明の半導体装置では
小型であってかつ極めて高’AI率の冷汀1効果をVす
ることが可能となる。従って、必要に応じて、局所的に
使用することによって高効率の冷I」lが可能となる。
(G3) As is clear from this table, the semiconductor device of the present invention is small and can reduce the cold slag 1 effect with an extremely high AI rate. Therefore, high efficiency cold I'l is possible by local application as needed.

なお、冷却ファンの駆動源としてはバイモルフを用いた
が、他の手段にJ:つてし良いことはいうまでもない。
Although a bimorph was used as a driving source for the cooling fan, it goes without saying that other means may be used.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)乃至(C)は本発明実施例の半導体装置を
示づ図、第2図(a ) ++3よび< b > i、
を従来例の半導体装置を示づ図である。 1.11・・・パッケージ、1a・・・ベース、1b・
・・キルツブ、2,12・・・冷7JIフイン、f・・
・静岡、3・・・冷1」1フアン、3a・・・圧電素子
支Rj台、3b・・・圧電素子、3C・・・動翼、3d
・・・電源線、4・・・半導体装ツブ、5・・・ワイヤ
、6・・・リードフレーム、7・・・低融点ガラス。 A 第1図(a) a 第1図(b)     第1図(C) 第2図(0) 第2図(b)
FIGS. 1(a) to (C) are diagrams showing semiconductor devices according to embodiments of the present invention, FIG. 2(a) ++3 and <b> i,
FIG. 2 is a diagram showing a conventional semiconductor device. 1.11...Package, 1a...Base, 1b.
... Kirtsubu, 2,12... cold 7JI Finn, f...
・Shizuoka, 3... Cold 1'' 1 fan, 3a... Piezoelectric element support Rj stand, 3b... Piezoelectric element, 3C... Moving blade, 3d
...Power supply line, 4...Semiconductor component block, 5...Wire, 6...Lead frame, 7...Low melting point glass. A Figure 1 (a) a Figure 1 (b) Figure 1 (C) Figure 2 (0) Figure 2 (b)

Claims (2)

【特許請求の範囲】[Claims] (1)電子回路素子を実装した半導体装置のパッケージ
に対し、各パッケージ毎に 複数の静翼を具備した冷却フィンと、 該静翼の間に放出される発生熱を散逸せしむべく、 静翼間に配設された動翼を具備した冷却ファンとを 含む冷却装置を配設したことを特徴とする半導体装置。
(1) Cooling fins with a plurality of stator blades for each package for semiconductor device packages mounting electronic circuit elements, and stator blades to dissipate heat generated between the stator blades. What is claimed is: 1. A semiconductor device comprising: a cooling device including a cooling fan having rotor blades disposed between the semiconductor device and the cooling fan provided with the rotor blades;
(2)前記静翼は板状体からなり、パッケージのベース
面に垂直であつてかつ所定の間隔で互いに平行となるよ
うに配設したことを特徴とする特許請求の範囲第(1)
項記載の半導体装置。
(2) Claim (1) characterized in that the stationary vanes are made of plate-shaped bodies and are arranged perpendicular to the base surface of the package and parallel to each other at predetermined intervals.
1. Semiconductor device described in Section 1.
JP22336085A 1985-10-07 1985-10-07 Semiconductor device Pending JPS6281736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22336085A JPS6281736A (en) 1985-10-07 1985-10-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22336085A JPS6281736A (en) 1985-10-07 1985-10-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6281736A true JPS6281736A (en) 1987-04-15

Family

ID=16796931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22336085A Pending JPS6281736A (en) 1985-10-07 1985-10-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6281736A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01233796A (en) * 1988-03-14 1989-09-19 Murata Mfg Co Ltd Radiator
JPH01137597U (en) * 1988-03-14 1989-09-20
US5008582A (en) * 1988-01-29 1991-04-16 Kabushiki Kaisha Toshiba Electronic device having a cooling element
CN103541917A (en) * 2012-07-10 2014-01-29 马小康 Magnetic force linkage type fan

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008582A (en) * 1988-01-29 1991-04-16 Kabushiki Kaisha Toshiba Electronic device having a cooling element
JPH01233796A (en) * 1988-03-14 1989-09-19 Murata Mfg Co Ltd Radiator
JPH01137597U (en) * 1988-03-14 1989-09-20
CN103541917A (en) * 2012-07-10 2014-01-29 马小康 Magnetic force linkage type fan

Similar Documents

Publication Publication Date Title
US5304846A (en) Narrow channel finned heat sinking for cooling high power electronic components
JP2901835B2 (en) Semiconductor device
JPH02305498A (en) Cold plate assembly
US6172416B1 (en) Heat sink unit for cooling a plurality of exothermic units, and electronic apparatus comprising the same
JPH0340462A (en) Fluid heat exchanger
JPH07106477A (en) Heat sink assembly with heat conduction board
JPH08274480A (en) Heat sink device, air blower used therefor, and electronic equipment using the device
US6906921B2 (en) Channeled heat dissipation device and a method of fabrication
JPS6281736A (en) Semiconductor device
US20160095255A1 (en) Thermal piezoelectric apparatus
EP2983457B1 (en) Optical module heat dissipating system
JP3002611B2 (en) Heating element cooling device
JP2002343912A (en) Device cooling method
JPH0730025A (en) Fan integral type cooling device for heater element
JP2002026214A (en) Electronic component cooling apparatus
JPS6272149A (en) Heat dissipation fin with piezoelectric fan
JPH07111378A (en) Packaging structure of double-sided packaging board
JPH0283958A (en) Discrete chip cooler
JP3013612B2 (en) Semiconductor device
JPH01151296A (en) Cooling apparatus for electronic parts
JPH0322951Y2 (en)
JPH07235633A (en) Multi-chip module
JPH05283878A (en) Heat sink cooling fan excellent in heat radiation property, and its manufacture
JPH0521666A (en) Semiconductor package provided with heat sink
JPH04267547A (en) Semiconductor package with heat sink