JPS6281703A - Manufacturing chip thin film resistor - Google Patents

Manufacturing chip thin film resistor

Info

Publication number
JPS6281703A
JPS6281703A JP60223038A JP22303885A JPS6281703A JP S6281703 A JPS6281703 A JP S6281703A JP 60223038 A JP60223038 A JP 60223038A JP 22303885 A JP22303885 A JP 22303885A JP S6281703 A JPS6281703 A JP S6281703A
Authority
JP
Japan
Prior art keywords
thin film
film resistor
chip
electrode layer
release cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60223038A
Other languages
Japanese (ja)
Inventor
岡崎 幸一郎
政幸 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP60223038A priority Critical patent/JPS6281703A/en
Publication of JPS6281703A publication Critical patent/JPS6281703A/en
Pending legal-status Critical Current

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  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はチップ抵抗の製造方法に係り、詳しくは金属薄
膜でチップ型の抵抗体を形成するところの方法に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a chip resistor, and more particularly to a method for forming a chip-type resistor from a metal thin film.

従来の技術 従来、一般にチップ抵抗は抵抗被膜が樹脂系炭素等を用
いて10〜50ル程度の厚みを有する厚膜に形成されて
いるのが通常である。
BACKGROUND OF THE INVENTION Conventionally, chip resistors generally have a resistive film formed of a resin-based carbon or the like and have a thickness of about 10 to 50 μm.

発明が解決しようとする問題点 然し、 この厚膜抵抗は温度係数に対する経時的変化か
著しくて抵抗値にハラ付きが生じ易い。そのため、抵抗
被膜を金属薄膜で成形する試みがなされているが、金属
薄膜をエツチング処理でパターン成形しまた左右の電極
層を除いて金属薄膜部分のみに絶縁樹脂被膜を形成する
に極めて手間が掛るところからコスト高を招く欠点があ
る。
Problems to be Solved by the Invention However, in this thick film resistor, the temperature coefficient changes significantly over time, and the resistance value tends to fluctuate. For this reason, attempts have been made to mold the resistive coating from a metal thin film, but it is extremely time-consuming to pattern the metal thin film by etching and to form an insulating resin coating only on the metal thin film portion, excluding the left and right electrode layers. However, it has the drawback of increasing costs.

問題点を解決するための手段 本発明に係るチップ薄膜抵抗の製造方法においては、チ
ンプ状に成形した基板の全面に極薄な金属の抵抗被膜を
被着し、その左右端部に電極層を形成した後、各電極層
を離型カバーで被覆して全周面に絶縁樹脂の保護膜を成
形し、しかる後に離型カバーを剥離して電極層を夫々露
出するようにされている。
Means for Solving the Problems In the method for manufacturing a chip thin film resistor according to the present invention, an extremely thin metal resistance coating is applied to the entire surface of a chimp-shaped substrate, and electrode layers are formed on the left and right ends of the substrate. After forming, each electrode layer is covered with a release cover to form a protective film of insulating resin over the entire circumference, and then the release cover is peeled off to expose each electrode layer.

作  用 このチップ薄膜抵抗の製造方法では、極薄な金属の抵抗
被膜を基板の全面に設けてしかも左右端部に電極層を形
成することによりエツチング処理を行わずに金属薄膜を
成形し、また、離型カパーで被覆した電極層部分を含め
て全周面に絶縁樹脂を被覆した後に離型カバーを剥離さ
せて金属薄膜部分にのみ絶縁被膜を成形するところから
、極めて簡単に薄膜抵抗体を形成できるようになる。
Function: In this method of manufacturing a chip thin film resistor, an ultra-thin metal resistance coating is provided on the entire surface of the substrate, and electrode layers are formed on the left and right ends, thereby forming a metal thin film without performing an etching process. After coating the entire circumference with an insulating resin, including the electrode layer covered with a mold release cover, the mold release cover is peeled off and an insulation film is formed only on the metal thin film, making it extremely easy to form a thin film resistor. be able to form.

実施例 以下、添付図面を参照して説明すれば、次の通りである
Embodiments will now be described with reference to the accompanying drawings.

このチップ型の薄膜抵抗を製造するにあたっては、まず
、アルミナや石英ガラス等を用いて基板1をチンプ状に
成形する。次に、その全面にNi −Cr等の金属材料
で抵抗被膜2を被着成形する。この抵抗被膜2はスパッ
タリング処理で数100A程度の薄膜状に形成すること
ができ、その膜厚は所望の抵抗値に応じて必要厚みに成
形するようにできる。全面に抵抗被膜2を被着した基板
lに対しては、そのままで左右の端部側に電極層3,4
を形成する。この電極層3,4はAg−Pdペースト等
を用い、基板1の左右端部側で抵抗被膜2の膜」−に付
着することにより形成することができる。
To manufacture this chip-type thin film resistor, first, a substrate 1 is formed into a chimp shape using alumina, quartz glass, or the like. Next, a resistive coating 2 is formed on the entire surface using a metal material such as Ni-Cr. This resistive coating 2 can be formed into a thin film of about several hundred amps by sputtering, and its thickness can be adjusted to a required thickness depending on the desired resistance value. For the substrate l on which the resistive film 2 is coated on the entire surface, electrode layers 3 and 4 are placed on the left and right ends.
form. The electrode layers 3 and 4 can be formed by using Ag--Pd paste or the like and attaching it to the resistive coating 2 on the left and right end sides of the substrate 1.

その電極層3,4を設けた後、必要に応じて電極層をト
リミングしまた熱処理を加えて抵抗被膜2並びに電極層
3,4の焼付けを行うようにできる。各電極層3,4を
形成した後、その外表面をステンレス等の離型カバー5
,6で夫々被覆し。
After the electrode layers 3 and 4 are provided, the electrode layers can be trimmed and heat treated if necessary to bake the resistive coating 2 and the electrode layers 3 and 4. After each electrode layer 3, 4 is formed, its outer surface is covered with a release cover 5 made of stainless steel or the like.
, 6, respectively.

更に、離型カバー5.6の被覆部分を含めて全周面にエ
ポキシ等の絶縁樹脂で保護膜7を形成する。この保護膜
7はスパッタリング等で各電極層3.4と同程度の厚み
に形成することができ、その樹脂硬化後に離型カバー5
,6を剥離させて各電極層3.4を露出することにより
電極層3.4の成形部分を除く抵抗被膜2の表面部分を
被覆するものとして形成することができる。
Furthermore, a protective film 7 is formed with an insulating resin such as epoxy on the entire circumferential surface of the mold release cover 5.6, including the covered portion. This protective film 7 can be formed by sputtering or the like to have the same thickness as each electrode layer 3.4, and after the resin hardens, the mold release cover 7
, 6 to expose each electrode layer 3.4, it can be formed to cover the surface portion of the resistive coating 2 except for the molded portion of the electrode layer 3.4.

このようにして製造する抵抗体は、抵抗被膜2が極薄な
金属薄膜として基板lの全面に形成され、しかもその左
右端部に電極層3.4を持って中央部分の抵抗被膜個所
を絶縁樹脂の保護膜7で覆ったチップ型のものとして得
られるようになる。
In the resistor manufactured in this way, the resistive coating 2 is formed as an extremely thin metal thin film over the entire surface of the substrate l, and has electrode layers 3.4 on the left and right ends to insulate the resistive coating in the center. It can be obtained as a chip type covered with a protective film 7 made of resin.

発明の効果 以上の如く、本発明に係るチップ:A膜抵抗の製造方法
に依れば、特性の極めて良好な薄膜抵抗体を簡単にしか
も低コストで製造することができる。
Effects of the Invention As described above, according to the method for manufacturing a chip:A film resistor according to the present invention, a thin film resistor with extremely good characteristics can be manufactured easily and at low cost.

【図面の簡単な説明】[Brief explanation of drawings]

第1〜6図は本発明に係るチップ薄膜抵抗の製造方法を
各工程順に従って示す説明図である。 1:基板、2.金属抵抗被膜、3,4:電極層、5.6
:j@型力八へ17:絶縁保護膜。 4:基板 2ニア金属抵札掖狭
1 to 6 are explanatory diagrams showing the method for manufacturing a chip thin film resistor according to the present invention according to the order of each step. 1: Substrate, 2. Metal resistance film, 3, 4: Electrode layer, 5.6
:j@type Rikihachi 17: Insulating protective film. 4: Board 2 near metal resistance plate

Claims (1)

【特許請求の範囲】[Claims] チップ状に成形した基板の全面に極薄な金属の抵抗被膜
を被着し、その左右端部に電極層を形成した後、各電極
層を離型カバーで被覆して全周面に絶縁樹脂の保護膜を
成形し、しかる後に離型カバーを剥離して電極層を夫々
露出するようにしたことを特徴とするチップ薄膜抵抗の
製造方法。
After applying an ultra-thin metal resistance coating to the entire surface of a chip-shaped substrate and forming electrode layers on the left and right ends, each electrode layer is covered with a release cover and an insulating resin is applied to the entire circumference. 1. A method for producing a chip thin film resistor, comprising: molding a protective film, and then peeling off a mold release cover to expose each electrode layer.
JP60223038A 1985-10-07 1985-10-07 Manufacturing chip thin film resistor Pending JPS6281703A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60223038A JPS6281703A (en) 1985-10-07 1985-10-07 Manufacturing chip thin film resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60223038A JPS6281703A (en) 1985-10-07 1985-10-07 Manufacturing chip thin film resistor

Publications (1)

Publication Number Publication Date
JPS6281703A true JPS6281703A (en) 1987-04-15

Family

ID=16791866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60223038A Pending JPS6281703A (en) 1985-10-07 1985-10-07 Manufacturing chip thin film resistor

Country Status (1)

Country Link
JP (1) JPS6281703A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62201902U (en) * 1986-06-13 1987-12-23

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62201902U (en) * 1986-06-13 1987-12-23
JPH0541525Y2 (en) * 1986-06-13 1993-10-20

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