JPS6281020A - Photo-cvd device - Google Patents

Photo-cvd device

Info

Publication number
JPS6281020A
JPS6281020A JP22118185A JP22118185A JPS6281020A JP S6281020 A JPS6281020 A JP S6281020A JP 22118185 A JP22118185 A JP 22118185A JP 22118185 A JP22118185 A JP 22118185A JP S6281020 A JPS6281020 A JP S6281020A
Authority
JP
Japan
Prior art keywords
light source
gas
tank
film
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22118185A
Other languages
Japanese (ja)
Inventor
Takeshige Ichimura
市村 剛重
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP22118185A priority Critical patent/JPS6281020A/en
Publication of JPS6281020A publication Critical patent/JPS6281020A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent a reaction product from being adhered to a light source or a transparent cylinder by enclosing the light source of a photo-CVD device with a cylinder in a double structure, and supplying unreacting gas to between intermediate chambers, and feeding out the gas from the through-holes of the outside cylinder. CONSTITUTION:A substrate 3 is set on a support 2 which contains a heater in a reaction tank 1, and a light source lamp 5 is disposed oppositely to the substrate. Raw gas is fed through a gas supply port 6 into the tank 1, consumed to form a film, and then fed out of the tank through an exhaust port 7. The lamp 5 is composed of double quartz glass, many holes 11 are opened in an outside glass tube 10, and a unreacting gas supply port 12 is attached to the gap portion. When forming a film by an optical CVC, unreacting gas is supplied from the port 12, and fed through the holes 11 into the tank. Thus, it can prevent the raw gas in the tank from arriving at the surface of the light source lamp.

Description

【発明の詳細な説明】[Detailed description of the invention] 【発明の属する技術分野】[Technical field to which the invention pertains]

本発明は、光分解により原料ガスを分解し、生成された
活性種を基板に堆積させて薄膜を形成する光CVD装置
に関するものである。
The present invention relates to a photo-CVD apparatus that decomposes a source gas by photolysis and deposits the generated active species on a substrate to form a thin film.

【従来技術とその問題点】[Prior art and its problems]

この種の光CVD装置として従来用いられてきた装置の
概略図を第2図に示す、紫外光源としての水銀ランプ5
を反応槽lに隣接した光源室8に配置し、その紫外光を
排気ロアより排気された反応[1の壁の一部に取付けら
れた透明窓4を通して原料ガスに照射し、これを光分解
させてヒータを有する支持体2の上の基板3の表面に膜
形成を行う、ア1モルファスシリコン膜形成の場合は、
原料ガスとしてSiH,や5izH4あるいはそれを水
素。 希ガス等で希釈したものをガス供給口6より導入する。 ことろがこのような光CVDJ置では、基板3の上に膜
が形成さるたけてなく、同時に窓にも膜が形成されてし
まい、照射開始後しばらくすると窓を通過する光量が減
少し、ついには膜が形成されなくなってしまう欠点をも
つ、こうした窓への膜の付着を減少させるため、窓の内
側表面に拡散ポンプ用のオイルを塗るという方法や窓面
にシート状のフィルムを取付け、順次新しいフィルム面
が窓上に送り出され、一方で巻取ってゆくという方法等
が考案されている。しかしこれでも長時間成膜を行うと
、次第に窓が曇ってしまい、この問題は解決されていな
い。
A schematic diagram of a device conventionally used as this type of optical CVD device is shown in FIG. 2, with a mercury lamp 5 as an ultraviolet light source.
is placed in the light source chamber 8 adjacent to the reaction tank 1, and the ultraviolet light is irradiated onto the raw material gas through the transparent window 4 attached to a part of the wall of the reaction chamber 1, which is exhausted from the exhaust lower, and the material gas is photolyzed. In the case of amorphous silicon film formation in which a film is formed on the surface of a substrate 3 on a support 2 having a heater by
SiH, 5izH4, or hydrogen as a raw material gas. A gas diluted with a rare gas or the like is introduced from the gas supply port 6. However, in such an optical CVDJ system, a film is constantly formed on the substrate 3, and at the same time, a film is also formed on the window, and after a while after the start of irradiation, the amount of light passing through the window decreases, and finally In order to reduce the adhesion of films to these windows, which have the disadvantage of not forming a film, there are methods such as applying oil for diffusion pumps to the inner surface of the windows, or attaching sheet-like films to the window surfaces, and applying various methods. A method has been devised in which a new film surface is fed out onto the window while it is being wound up. However, even with this, if film formation is continued for a long time, the window will gradually become cloudy, and this problem has not been solved.

【発明の目的] 本発明は、上述の問題を解決して光の入射窓のくもりによる光量の減少に基づく成膜速度の低下もしくは成膜の中断のない光CVD装置を提供することを目的とする。 【発明の要点】[Purpose of the invention] SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a photo-CVD apparatus that does not reduce the film-forming speed or interrupt film-forming due to a decrease in the amount of light due to clouding of the light entrance window. [Key points of the invention]

本発明による光CVD装置は、光源が反応槽内に配置さ
れ、その光源は多数の貫通孔を備えた透明筒状体内に収
容され、その筒状体と光源との間の空間が非反応ガス供
給口に接続されていることによ、す、水素あるいは希ガ
スなどの非反応ガスを筒状体の貫通孔より流出させて原
料ガスが光源あるいは筒状体表面に到達して膜が生成す
るのを阻止し、上述の目的を達成する。
In the photo-CVD apparatus according to the present invention, a light source is placed in a reaction tank, the light source is housed in a transparent cylindrical body with a large number of through holes, and the space between the cylindrical body and the light source is filled with non-reactive gas. By being connected to the supply port, a non-reactive gas such as hydrogen or rare gas flows out through the through hole of the cylindrical body, and the raw material gas reaches the light source or the surface of the cylindrical body to form a film. to achieve the above objectives.

【発明の実施例】[Embodiments of the invention]

第1図(a)、(ト))は本発明の一実施例を示し、第
2図と共通の部分には同一の符号が付されている。 反応P!Jの中のヒータを内蔵した支持体2の上に基板
3がセントされ、この基板と対向して光源ランプ5が配
置されている。原料ガスはガス供給口6を通して反応槽
1内に送り込まれ、膜形成に消費されたあと排ガスは排
気ロアを通して反応槽外に出されるようになっている。 光源ランプ5の光の放射面は二重の石英ガラスより構成
されており、二つの間には隙間がおいている。外側のガ
ラス管10には多数の穴11があけられており、隙間の
部分には非反応ガス供給口12が取付けられている。光
CVDで膜形成を行う際には、ガス供給口12がら水素
あるいは希ガスなどの非反応ガスが供給され、穴11を
通して反応槽内に送り込まれる。これによって反応槽内
の原料ガスが光源ランプ表面に到達するのを防ぐため、
ランプ表面上に膜堆積がおこらず、光の入射窓のくもり
の問題が解決される。 穴11を直径lflとし、11間隔でガラス管1oに明
け、圧力I Torrの反応槽内に穴1個あたり常圧換
算で1 sec簡の2i!L量の水素ガスを16m/秒
の流速で流出させた場合、ガラス管1oおよび光源5表
面のくもりが生じなかった。 この構成による非反応ガスの流れは、窓のくもりを防止
するだけでなく、光源ランプ5を冷却し、光源の光の強
度を安定させる効果もある。特に光源ランプとして低圧
水銀ランプを用いる場合、温度に依存する水銀蒸気圧が
重要パラメータであるのでそのような効果は重要となる
。 上述の実施例では5本の光源ランプ5を用いているが、
この数は基板上の成膜面積に応じて決められる。また上
述の実施例では各ランプを二重管構造としているが、各
ランプを反応槽内の共通の光源室内に収容し、この光源
室内に複数のガス供給口から非反応ガスを分散して導入
し、光源室の基板側の透明窓に設けた多数の貫通孔から
流出させてもよい。
FIGS. 1(a) and 1(g)) show an embodiment of the present invention, and parts common to those in FIG. 2 are given the same reference numerals. Reaction P! A substrate 3 is placed on a support 2 containing a built-in heater in a J, and a light source lamp 5 is placed facing the substrate. The raw material gas is fed into the reaction tank 1 through the gas supply port 6, and after being consumed for film formation, the exhaust gas is discharged to the outside of the reaction tank through the exhaust lower. The light emitting surface of the light source lamp 5 is made of double quartz glass, with a gap between the two. A large number of holes 11 are made in the outer glass tube 10, and a non-reactive gas supply port 12 is installed in the gap. When forming a film by photo-CVD, a non-reactive gas such as hydrogen or rare gas is supplied through the gas supply port 12 and sent into the reaction tank through the hole 11. This prevents the raw material gas in the reaction tank from reaching the light source lamp surface.
No film deposition occurs on the lamp surface and the problem of fogging of the light entrance window is solved. The holes 11 are made to have a diameter lfl, and are opened in the glass tube 1o at 11 intervals, and placed in a reaction tank with a pressure of I Torr. When L amount of hydrogen gas was flowed out at a flow rate of 16 m/sec, no clouding occurred on the surfaces of the glass tube 1o and the light source 5. The flow of non-reactive gas with this configuration not only prevents the window from fogging up, but also has the effect of cooling the light source lamp 5 and stabilizing the intensity of the light from the light source. In particular, when a low-pressure mercury lamp is used as a light source lamp, such an effect is important because mercury vapor pressure, which depends on temperature, is an important parameter. Although five light source lamps 5 are used in the above embodiment,
This number is determined depending on the area of film formation on the substrate. Furthermore, in the above embodiment, each lamp has a double tube structure, but each lamp is housed in a common light source chamber in the reaction tank, and non-reactive gas is introduced in a distributed manner into this light source chamber from multiple gas supply ports. However, the light may flow out from a large number of through holes provided in the transparent window on the substrate side of the light source chamber.

【発明の効果】【Effect of the invention】

本発明によれば、光CVD装置の光源を筒状体で包囲し
て二重の構造とし、中間室間に非反応ガスを供給し、外
側の透明筒状体の貫通孔から流出させることにより、光
源あるいは透明筒状体への反応生成物の付着を防止して
くもりによる光の強度の低下の問題を解決する。さらに
、非反応ガスによる光源の冷却も行えるので、光源の強
度を安定化させる効果もある。
According to the present invention, the light source of the photoCVD apparatus is surrounded by a cylindrical body to form a double structure, and a non-reactive gas is supplied between the intermediate chambers and is caused to flow out from the through hole of the outer transparent cylindrical body. This prevents reaction products from adhering to the light source or the transparent cylindrical body, thereby solving the problem of reduction in light intensity due to cloudiness. Furthermore, since the light source can be cooled by the non-reactive gas, there is also the effect of stabilizing the intensity of the light source.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示し、(alは正面断面図
、(blは側断面図、第2図は従来のCVD装置の断面
図である。 ■=反応槽、2:支持体、3:基板、5:光源ランプ、
6;原料ガス供給口、7:排気口、1o。 外側ガラス管、11:穴、12:非反応ガス供給口。 −7,4 七、
FIG. 1 shows an embodiment of the present invention, (al is a front sectional view, (bl is a side sectional view, and FIG. 2 is a sectional view of a conventional CVD apparatus. ■ = reaction tank, 2: support , 3: board, 5: light source lamp,
6; Raw material gas supply port, 7: Exhaust port, 1o. Outer glass tube, 11: hole, 12: non-reactive gas supply port. -7,4 Seven,

Claims (1)

【特許請求の範囲】[Claims] 1)光源が反応槽内に配置され、該光源は多数の貫通孔
を備えた透明筒状体内に収容され、該筒状体と前記光源
の間の空間が非反応ガス供給口に接続されたことを特徴
とする光CVD装置。
1) A light source was placed in a reaction tank, the light source was housed in a transparent cylindrical body with a large number of through holes, and the space between the cylindrical body and the light source was connected to a non-reactive gas supply port. An optical CVD device characterized by the following.
JP22118185A 1985-10-04 1985-10-04 Photo-cvd device Pending JPS6281020A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22118185A JPS6281020A (en) 1985-10-04 1985-10-04 Photo-cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22118185A JPS6281020A (en) 1985-10-04 1985-10-04 Photo-cvd device

Publications (1)

Publication Number Publication Date
JPS6281020A true JPS6281020A (en) 1987-04-14

Family

ID=16762747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22118185A Pending JPS6281020A (en) 1985-10-04 1985-10-04 Photo-cvd device

Country Status (1)

Country Link
JP (1) JPS6281020A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7992318B2 (en) * 2007-01-22 2011-08-09 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7992318B2 (en) * 2007-01-22 2011-08-09 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium
US8186077B2 (en) 2007-01-22 2012-05-29 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium

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