JPS6277473A - Photo-cvd device - Google Patents

Photo-cvd device

Info

Publication number
JPS6277473A
JPS6277473A JP21875685A JP21875685A JPS6277473A JP S6277473 A JPS6277473 A JP S6277473A JP 21875685 A JP21875685 A JP 21875685A JP 21875685 A JP21875685 A JP 21875685A JP S6277473 A JPS6277473 A JP S6277473A
Authority
JP
Japan
Prior art keywords
chamber
inert gas
film forming
vacuum
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21875685A
Other languages
Japanese (ja)
Inventor
Hisayoshi Sano
佐野 久義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP21875685A priority Critical patent/JPS6277473A/en
Publication of JPS6277473A publication Critical patent/JPS6277473A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the formation of films on the surface of glazed window by segmenting a vacuum chamber to an inert gas introducing chamber and film forming chamber by a partition part juxtaposed with plural glass sheets spaced from each other to a plane shape and allowing an inert gas to flow out of the inert gas introducing chamber into the film forming chamber. CONSTITUTION:The vacuum chamber 11 is segmented to the inert gas introducing chamber 27 and the film forming chamber 29 by the partition section 25. The partition part 25 juxtaposed with plural sheets of the rectangular quartz glass plates 41 to the plane shape so as to form spaces 43 is installed as said partition part. The inside of the chamber 11 is vacuum evacuated by a vacuum evacuating means 35 and a gaseous material is introduced by a supply means 37 into the film forming chamber 29. while a substrate 17 attached to a holder 31 is heated by a heater 33, light is irradiated from a mercury lamp 15 to the gaseous material through the glazed window 13 and the glass plates 41 to form the film on the surface of the substrate 17. He is introduced into the chamber 27 from a supply means 39 and is filled into the chamber 27; thereafter, the He is admitted through the spaces 43 into the chamber 29. The formation of the film on the surface of the glazed window 13 and the glass plates 41 is thus prevented.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、光照射により材料ガスを分解し、その分解
生成物や反応生成物の基板表面への堆積を行なわせて、
基板の表面に薄膜を形成させる光CVD装置に関するも
のであり、この発明は1例えば半導体シリコン膜や絶縁
膜や金属配線膜を形成する場合などに利用される。
[Detailed Description of the Invention] [Industrial Application Field] The present invention decomposes a material gas by light irradiation, deposits the decomposition products and reaction products on the substrate surface,
The present invention relates to a photo-CVD apparatus for forming a thin film on the surface of a substrate, and the present invention is used, for example, when forming a semiconductor silicon film, an insulating film, or a metal wiring film.

〔従来の技術〕[Conventional technology]

気体材料から基板上に薄膜を形成させる方法を一般にC
VD (ケミカル ベーパ デボジシ目ン)法と呼んで
いるが、このCVD法としては従来よりプラズマCVD
法、熱CVD法などが利用されてきた。ところで近年、
電子デバイスの高密度化に伴って荷電粒子の衝撃による
損傷(イオンダメージ)がないといった利点から、並び
に反応過程の選択性や処理過程の低温化などといった利
点から、低圧水銀ランプやレーザーなどの光源によって
気体材料を光照射し、材料分子を励起して分解、反応を
起こさせる光CVD法が関心を朶め、急速な進展をみせ
ている。
Generally, C is a method of forming a thin film on a substrate from a gaseous material.
It is called VD (Chemical Vapor Deposition) method, but this CVD method has traditionally been plasma CVD.
method, thermal CVD method, etc. have been used. By the way, in recent years
With the increasing density of electronic devices, light sources such as low-pressure mercury lamps and lasers are being used because of the advantages of not being damaged by charged particle impact (ion damage), as well as the selectivity of the reaction process and the low temperature of the processing process. The photo-CVD method, in which a gaseous material is irradiated with light to excite the material's molecules to cause decomposition and reaction, has attracted a lot of interest and is making rapid progress.

この光CVD法は、第3図にその装置の概略構成を示す
ように、壁面の一部にガラス窓13が形成された真空チ
ャンバll内を真空排気し、その真空チャンバll内に
シランガス等の材料ガスを導入し、真空チャンバ11の
外部から水銀ランプ15によりガラス窓13を通して材
料ガスを光照射する。そして、この際に起こる光励起反
応を利用して基板17上に固体生成物の膜を形成させる
ものである。
In this optical CVD method, as shown in the schematic configuration of the apparatus in FIG. A material gas is introduced, and the material gas is irradiated with light from outside the vacuum chamber 11 through the glass window 13 using a mercury lamp 15 . Then, a film of solid product is formed on the substrate 17 by utilizing the photoexcitation reaction that occurs at this time.

ところで、その光励起反応過程において、基板17の表
面だけでなく、材料ガスが触れる。ガラス3t13の内
側表面にも同様の膜が形成される。
By the way, in the photoexcitation reaction process, not only the surface of the substrate 17 but also the material gas comes into contact with it. A similar film is also formed on the inner surface of the glass 3t13.

ガラス窓13の表面に膜が形成されると、水銀ランプ1
5から照射された光の透過量が減少し、その結果、真空
チャンバ11内の材料ガスに与えられるべき励起のため
のエネルギーが減少することとなる。そこで、ガラス窓
13の内面への成膜を防止するために、従来は、第3図
に示すように、ガラス窓13の近傍にヘリウムガス等の
不活性ガスの吹出し口19を配設し、その吹出し口19
からヘリウムガス等をガラス窓13の内側表面に吹き付
けて、材料ガスがガラス窓13の表面に接近しないよう
にしていた。
When a film is formed on the surface of the glass window 13, the mercury lamp 1
The amount of light transmitted from the vacuum chamber 11 decreases, and as a result, the energy for excitation that should be given to the material gas in the vacuum chamber 11 decreases. Therefore, in order to prevent film formation on the inner surface of the glass window 13, conventionally, as shown in FIG. Its outlet 19
Helium gas or the like was blown onto the inner surface of the glass window 13 to prevent the material gas from approaching the surface of the glass window 13.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上記した従来のような方法によって、ガ
ラス窓15の表面への材料ガスの接近を完全に防ぐこと
は困難であり、特にガラス窓15の面積が大きい場合に
は尚更である。この結果、上述したようなガラス窓13
への成膜が依然として起こり、材料ガスに対して与える
べき光エネルギーが時間の経過と共に減少するといった
問題点があった。
However, it is difficult to completely prevent the material gas from approaching the surface of the glass window 15 using the conventional method described above, especially when the area of the glass window 15 is large. As a result, the glass window 13 as described above
There were problems in that film formation still occurred and the light energy that should be applied to the material gas decreased over time.

この発明は1以上のような問題点を解決するためになさ
れたものである。
The present invention has been made to solve one or more problems.

(問題点を解決するための手段〕 この発明は、真空チャンバの内部空間を、真空チャンバ
の壁面の一部を形成するガラス窓と真空チャンバ内に配
設される基板ホルダとの間で2室に仕切り、その一方を
不活性ガス導入室とし、他方を成膜室とした。そして、
その仕切部に複数枚のガラス板を隙間を設けて平面状に
並設し、その隙間を介して前記不活性ガス導入室と成膜
室とを連通させ、不活性ガス導入室には不活性ガス供給
手段を接続して不活性ガスを供給するようにした0以上
のように光CvD装置を構成することによって、上記問
題点を解決した。
(Means for Solving the Problems) The present invention divides the internal space of a vacuum chamber into two rooms between a glass window forming a part of the wall surface of the vacuum chamber and a substrate holder disposed within the vacuum chamber. One was used as an inert gas introduction chamber, and the other was used as a film formation chamber.
A plurality of glass plates are arranged in parallel in a plane with gaps in the partition, and the inert gas introduction chamber and the film forming chamber are communicated through the gaps. The above-mentioned problems were solved by configuring the optical CvD apparatus as described above in which a gas supply means was connected to supply an inert gas.

〔作  用〕[For production]

この発明に係る光CVD装置においては、真空チャンバ
内部が不活性ガス導入室と成膜室とに区分され、ガラス
窓の部分は不活性ガス導入室の壁面の一部を形成してい
る。そして成膜過程中、不活性ガス導入室に常時不活性
ガスを供給するようにすれば、その不活性ガスは不活性
ガス導入室を充たして、仕切部に並設された各ガラス板
間から成膜室側に流入する。このため。
In the optical CVD apparatus according to the present invention, the inside of the vacuum chamber is divided into an inert gas introduction chamber and a film forming chamber, and the glass window portion forms a part of the wall surface of the inert gas introduction chamber. During the film formation process, if inert gas is constantly supplied to the inert gas introduction chamber, the inert gas will fill the inert gas introduction chamber and flow between the glass plates arranged in parallel in the partition. It flows into the film forming chamber side. For this reason.

成膜室内に供給された材料ガスが不活性ガス導入室側に
流入するようなことは起こらず、材料ガスがガラス窓の
表面に接触することが妨げられて、ガラス窓の内側表面
への膜の形成が完全に防止される。
The material gas supplied into the film forming chamber does not flow into the inert gas introduction chamber, and the material gas is prevented from coming into contact with the surface of the glass window, causing the film to form on the inner surface of the glass window. formation is completely prevented.

〔実施例〕〔Example〕

以下、第1図及び第2図を参照しながら、この発明の好
適な実施例について説明する。
Hereinafter, preferred embodiments of the present invention will be described with reference to FIGS. 1 and 2.

第1図は、この発明の1実施例を示し、光CVD装置の
構成を模式的に表わした正面断面図である。同図におい
て、11は真空チャンバであり、その壁面の一部に石英
ガラスのガラス窓13が設けられている。図中、21は
シール部材である。ガラス窓13の外側には、その外面
に対向して水銀ランプ(光源)15が配設され、水銀ラ
ンプ15の背後に反射板23が配置されている。真空チ
ャンバ11の内部空間は、仕切部25によって、ガラス
窓13側の不活性ガス導入室27と成膜室29との2室
に画されている。成膜室29内には基板17を取り付け
るための基板ホルダ31が配設されており、この基板ホ
ルダ31にはヒータ33が付設されている。また成膜室
29には、真空チャンバ11内部を真空排気する真空排
気手段35が接続されている。そして材料ガスは、材料
ガス供給手段37から成膜室29内に供給される。一方
、不活性ガス導入室27には、不活性ガス供給手段39
の通路が連通しており、ヘリウムガスなどが供給される
FIG. 1 shows one embodiment of the present invention, and is a front sectional view schematically showing the configuration of an optical CVD apparatus. In the figure, 11 is a vacuum chamber, and a glass window 13 made of quartz glass is provided on a part of the wall surface of the vacuum chamber. In the figure, 21 is a sealing member. A mercury lamp (light source) 15 is disposed on the outside of the glass window 13 facing the outer surface thereof, and a reflection plate 23 is disposed behind the mercury lamp 15. The interior space of the vacuum chamber 11 is divided by a partition 25 into two chambers: an inert gas introduction chamber 27 on the glass window 13 side and a film forming chamber 29 . A substrate holder 31 for mounting the substrate 17 is disposed within the film forming chamber 29, and a heater 33 is attached to this substrate holder 31. Further, a vacuum evacuation means 35 for evacuating the inside of the vacuum chamber 11 is connected to the film forming chamber 29 . Then, the material gas is supplied into the film forming chamber 29 from the material gas supply means 37. On the other hand, an inert gas supply means 39 is provided in the inert gas introduction chamber 27.
The passages communicate with each other, and helium gas is supplied.

不活性ガス導入室27と成膜室29との仕切部25には
、第2図に示したように、矩形の石英ガラス板41を複
数枚、各ガラス板41間に隙間43を設けて平面状に並
設したものを設置する0図中、45はスペーサ、47は
複数枚のガラス板41を両側から挟む押え枠であり、ま
た49は一対の押え枠47、47を締め付けるための通
しボルトである6以上のように構成された光CV D@
随において、真空排気手段35によって真空チャンバ1
1内を真空排気し、材料ガス供給手段37から成膜室2
9に材料ガスを導入する。そして、基板ホルダ31に取
り付けられた基板17をヒータ33によって加熱しなが
ら、水銀ランプ15からガラス窓13及びガラス板41
を通して成膜室29内の材料ガスに光照射し、光励起反
応を起こさせて基板17の表面に膜を形成させる。この
成膜過程を通じて、不活性ガス導入室27内に不活性ガ
ス供給手段39からヘリウムガスを供給すると、不活性
ガス導入室27の内部はヘリウムガスで充満され、さら
にヘリウムガスは不活性ガス導入室27から成膜室29
の方へ隙間43を通って流れ込む。このため、成膜室2
9内の材料ガスが不活性ガス導入室27側へ流入するこ
とは防止され、ガラス窓13の内側表面が材料ガスによ
って曝されることはなく、ガラス窓13表面への成膜と
いったことは起こらない、また、ガラス板41間の隙間
43からヘリウムガスが成膜室29側へ吹き出すので、
ガラス板41の表面への成膜もほとんど起こらない。
As shown in FIG. 2, the partition 25 between the inert gas introduction chamber 27 and the film forming chamber 29 is provided with a plurality of rectangular quartz glass plates 41 with gaps 43 between each glass plate 41 to form a flat surface. In the figure, 45 is a spacer, 47 is a holding frame that sandwiches the glass plates 41 from both sides, and 49 is a through bolt for tightening the pair of holding frames 47, 47. An optical CV D@ configured as 6 or more is
At any time, the vacuum chamber 1 is removed by the evacuation means 35.
1 is evacuated, and the film forming chamber 2 is supplied from the material gas supply means 37.
A material gas is introduced into 9. Then, while the substrate 17 attached to the substrate holder 31 is heated by the heater 33, the glass window 13 and the glass plate 41 are heated by the mercury lamp 15.
The material gas in the film forming chamber 29 is irradiated with light through the film forming chamber 29 to cause a photoexcitation reaction and form a film on the surface of the substrate 17. Through this film forming process, when helium gas is supplied into the inert gas introduction chamber 27 from the inert gas supply means 39, the inside of the inert gas introduction chamber 27 is filled with helium gas, and further helium gas is introduced into the inert gas introduction chamber 27. From chamber 27 to film forming chamber 29
It flows through the gap 43 towards . For this reason, the film forming chamber 2
9 is prevented from flowing into the inert gas introduction chamber 27 side, the inner surface of the glass window 13 is not exposed to the material gas, and film formation on the surface of the glass window 13 does not occur. No, and since helium gas blows out from the gap 43 between the glass plates 41 toward the film forming chamber 29,
Film formation on the surface of the glass plate 41 also hardly occurs.

〔効  果〕〔effect〕

この発明は以上説明したような構成を有し、かつ作用す
るので、この発明に係る光CVD装置によれば、ガラス
窓への成膜が完全に防止され1時間の経過に従って材料
ガスに対して与えられる励起のための光エネルギーが減
少する。
Since the present invention has the configuration and operates as described above, the photo-CVD apparatus according to the present invention completely prevents film formation on the glass window and reduces the amount of material gas The light energy provided for excitation is reduced.

といったような事態を避けることができる。また仕切用
の石英ガラス板への成膜もほとんど起こらず1例え一部
に固体生成物の付着があったときでも、さらには何かの
原因で複数枚の石英ガラス板のうちの一部が破損したと
きでも、そのうちの1枚ないしは数枚の石英ガラス板だ
けを交換すれば良く、コストの面でも有利である。
Situations like this can be avoided. In addition, film formation on the quartz glass plates used for partitions rarely occurs, and even if solid products are attached to some parts, or even if some of the quartz glass plates for some reason are Even if it is damaged, only one or several of the quartz glass plates need to be replaced, which is advantageous in terms of cost.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図はこの発明の1実施例を示し、第1図
は、光CVD装置の構成を模式的に表わした正面断面図
、第2図は、不活性ガス導入室と成膜室との仕切部の平
面図であり、第3図は、従来装置の概略構成を示す模式
図である。 11・・・真空チャンバ、  13・・・ガラス窓、1
5・・・水銀ランプ(光源)、 17・・・基板、      25・・・仕切部、27
・・・不活性ガス導入室、29・・・成膜室。 31・・・基板ホルダ、   35・・・真空排気手段
、37・・・材料ガス供給手段、 39・・・不活性ガス供給手段、 41・・・ガラス板、    43・・・隙間。 第1図 第2図    第3図
1 and 2 show one embodiment of the present invention, FIG. 1 is a front sectional view schematically showing the configuration of a photo-CVD apparatus, and FIG. 2 shows an inert gas introduction chamber and a film forming chamber. FIG. 3 is a plan view of a partition from a chamber, and FIG. 3 is a schematic diagram showing a schematic configuration of a conventional device. 11...Vacuum chamber, 13...Glass window, 1
5... Mercury lamp (light source), 17... Board, 25... Partition part, 27
...Inert gas introduction chamber, 29... Film forming chamber. 31...Substrate holder, 35...Evacuation means, 37...Material gas supply means, 39...Inert gas supply means, 41...Glass plate, 43...Gap. Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 壁面の一部にガラス窓が形成された真空チャンバと、前
記ガラス窓の外面に対向して配設された光源と、前記真
空チャンバ内に配設された基板ホルダと、前記真空チャ
ンバに接続された真空排気手段と、前記真空チャンバ内
に材料ガスを供給する材料ガス供給手段とを備えてなる
光CVD装置において、前記真空チャンバの内部空間を
仕切って前記ガラス窓が壁面の一部を形成する不活性ガ
ス導入室と前記基板ホルダが配設される成膜室とに区分
するとともに、その仕切部に複数枚のガラス板を隙間を
設けて平面状に並設し、前記不活性ガス導入室と成膜室
とを前記隙間を介して連通させ、かつ不活性ガス導入室
に不活性ガス供給手段を接続したことを特徴とする光C
VD装置。
A vacuum chamber having a glass window formed in a part of the wall surface, a light source disposed opposite to the outer surface of the glass window, a substrate holder disposed within the vacuum chamber, and a substrate holder connected to the vacuum chamber. In the optical CVD apparatus, the optical CVD apparatus includes a vacuum evacuation means and a material gas supply means for supplying a material gas into the vacuum chamber, wherein the glass window forms a part of a wall surface by partitioning an internal space of the vacuum chamber. The inert gas introduction chamber is divided into an inert gas introduction chamber and a film forming chamber in which the substrate holder is disposed, and a plurality of glass plates are arranged in parallel in a plane with gaps in the partition part. and the film forming chamber are communicated through the gap, and an inert gas supply means is connected to the inert gas introducing chamber.
VD device.
JP21875685A 1985-09-30 1985-09-30 Photo-cvd device Pending JPS6277473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21875685A JPS6277473A (en) 1985-09-30 1985-09-30 Photo-cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21875685A JPS6277473A (en) 1985-09-30 1985-09-30 Photo-cvd device

Publications (1)

Publication Number Publication Date
JPS6277473A true JPS6277473A (en) 1987-04-09

Family

ID=16724913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21875685A Pending JPS6277473A (en) 1985-09-30 1985-09-30 Photo-cvd device

Country Status (1)

Country Link
JP (1) JPS6277473A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07132954A (en) * 1993-03-22 1995-05-23 Plastics Inc Double sealing container

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07132954A (en) * 1993-03-22 1995-05-23 Plastics Inc Double sealing container

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