JPS628022B2 - - Google Patents

Info

Publication number
JPS628022B2
JPS628022B2 JP56051793A JP5179381A JPS628022B2 JP S628022 B2 JPS628022 B2 JP S628022B2 JP 56051793 A JP56051793 A JP 56051793A JP 5179381 A JP5179381 A JP 5179381A JP S628022 B2 JPS628022 B2 JP S628022B2
Authority
JP
Japan
Prior art keywords
sample
light beam
cathode ray
ray tube
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56051793A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56155543A (en
Inventor
Tadasuke Munakata
Kunihiro Yagi
Teruaki Motooka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5179381A priority Critical patent/JPS56155543A/ja
Publication of JPS56155543A publication Critical patent/JPS56155543A/ja
Publication of JPS628022B2 publication Critical patent/JPS628022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP5179381A 1981-04-08 1981-04-08 Measuring device for semiconductor characteristic Granted JPS56155543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5179381A JPS56155543A (en) 1981-04-08 1981-04-08 Measuring device for semiconductor characteristic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5179381A JPS56155543A (en) 1981-04-08 1981-04-08 Measuring device for semiconductor characteristic

Publications (2)

Publication Number Publication Date
JPS56155543A JPS56155543A (en) 1981-12-01
JPS628022B2 true JPS628022B2 (enrdf_load_stackoverflow) 1987-02-20

Family

ID=12896813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5179381A Granted JPS56155543A (en) 1981-04-08 1981-04-08 Measuring device for semiconductor characteristic

Country Status (1)

Country Link
JP (1) JPS56155543A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5881944U (ja) * 1981-11-27 1983-06-03 株式会社日立製作所 半導体ウエハ検査装置
JPS5982740A (ja) * 1982-11-02 1984-05-12 Nec Corp 高抵抗半導体ウエハの評価方法
CN115032236B (zh) * 2021-03-04 2025-04-29 光颉科技股份有限公司 电阻元件金属层杂质的检测方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136182A (en) * 1978-04-13 1979-10-23 Fumio Horiguchi Method of measuring nonncontact semiconductor wafer characteristics

Also Published As

Publication number Publication date
JPS56155543A (en) 1981-12-01

Similar Documents

Publication Publication Date Title
US4464627A (en) Device for measuring semiconductor characteristics
US4287473A (en) Nondestructive method for detecting defects in photodetector and solar cell devices
US8941824B2 (en) Semiconductor inspection method and semiconductor inspection apparatus
US6346821B1 (en) Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices
JPH02119236A (ja) 直線状定フォトン束光電圧測定値から少数担体拡散長を判定するための方法および装置
TW341664B (en) Photovoltaic oxide charge measurement probe technique
US4433288A (en) Method and apparatus for determining minority carrier diffusion length in semiconductors
JPS61292069A (ja) 絶縁材上に形成される静電気潜像の非破壊読み出し装置及び方法
US4456879A (en) Method and apparatus for determining the doping profile in epitaxial layers of semiconductors
EP0118199A1 (en) An apparatus for measuring carrier lifetimes in a semiconductor
US5150043A (en) Apparatus and method for non-contact surface voltage probing by scanning photoelectron emission
US4841239A (en) Method and measuring instrument for identifying the diffusion length of the minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies
US4755748A (en) Method and apparatus for analyzing semiconductor devices using charge-sensitive electron-beam-injected-carrier microscopy
US6294919B1 (en) Method for nondestructive measurement of dopant concentrations and profiles in the drift region of certain semiconductor devices
US3767304A (en) Apparatus and method for detection of internal semiconductor inclusions
JPS628022B2 (enrdf_load_stackoverflow)
JP3133052B2 (ja) 半導体結晶体中の少数キヤリアの拡散距離の位置分解測定方法
EP0325453B1 (en) Noninvasive method for characterization of semiconductors
JP2001144155A (ja) 半導体解析装置および解析方法
JPS63269198A (ja) 液晶表示器用駆動回路基板の検査方法
JPS6242537Y2 (enrdf_load_stackoverflow)
RU2134468C1 (ru) Способ и устройство для контроля полупроводниковой структуры
Streever et al. Scanning photovoltage investigation of silicon-and GaAs-based MOS capacitors
Edwards et al. Laser and electron beam scanning of GaAs fets
Zareef et al. Achieving near 100% Fill factor for small pixel LGADs: Study of First Trench Isolated LGADs fabricated at Micron Semiconductor Ltd