JPS6278893A - 半導体レ−ザの選別方法 - Google Patents
半導体レ−ザの選別方法Info
- Publication number
- JPS6278893A JPS6278893A JP21988985A JP21988985A JPS6278893A JP S6278893 A JPS6278893 A JP S6278893A JP 21988985 A JP21988985 A JP 21988985A JP 21988985 A JP21988985 A JP 21988985A JP S6278893 A JPS6278893 A JP S6278893A
- Authority
- JP
- Japan
- Prior art keywords
- mode
- intensity
- emission spectrum
- oscillation
- oscillation threshold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000000034 method Methods 0.000 title description 10
- 230000010355 oscillation Effects 0.000 claims abstract description 26
- 238000000295 emission spectrum Methods 0.000 claims abstract description 24
- 230000003287 optical effect Effects 0.000 abstract description 10
- 230000002950 deficient Effects 0.000 abstract 2
- 238000005259 measurement Methods 0.000 description 4
- 238000010187 selection method Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21988985A JPS6278893A (ja) | 1985-10-01 | 1985-10-01 | 半導体レ−ザの選別方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21988985A JPS6278893A (ja) | 1985-10-01 | 1985-10-01 | 半導体レ−ザの選別方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6278893A true JPS6278893A (ja) | 1987-04-11 |
| JPH047112B2 JPH047112B2 (enExample) | 1992-02-07 |
Family
ID=16742633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21988985A Granted JPS6278893A (ja) | 1985-10-01 | 1985-10-01 | 半導体レ−ザの選別方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6278893A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02288286A (ja) * | 1989-04-27 | 1990-11-28 | Nec Corp | 分布帰還型半導体レーザの選別方法 |
| JPH03177090A (ja) * | 1989-12-05 | 1991-08-01 | Sony Tektronix Corp | 光パルス発生器及びレーザ・ダイオードの選択方法 |
| JPH04264223A (ja) * | 1990-09-19 | 1992-09-21 | American Teleph & Telegr Co <Att> | モード分配観測装置および光フィルタ |
-
1985
- 1985-10-01 JP JP21988985A patent/JPS6278893A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02288286A (ja) * | 1989-04-27 | 1990-11-28 | Nec Corp | 分布帰還型半導体レーザの選別方法 |
| JPH03177090A (ja) * | 1989-12-05 | 1991-08-01 | Sony Tektronix Corp | 光パルス発生器及びレーザ・ダイオードの選択方法 |
| JPH04264223A (ja) * | 1990-09-19 | 1992-09-21 | American Teleph & Telegr Co <Att> | モード分配観測装置および光フィルタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH047112B2 (enExample) | 1992-02-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6188705B1 (en) | Fiber grating coupled light source capable of tunable, single frequency operation | |
| CN103487403B (zh) | 带有参考腔补偿的双波长组合光纤激光器气体检测系统 | |
| JP4071281B2 (ja) | 光ファイバジャイロスコープの光源波長制御 | |
| US5015099A (en) | Differential absorption laser radar gas detection apparatus having tunable wavelength single mode semiconductor laser source | |
| US8693512B2 (en) | Frequency referencing for tunable lasers | |
| Bjorkholm et al. | Distributed-feedback lasers in thin-film optical waveguides | |
| US6826206B1 (en) | Method of characterizing a tuneable laser | |
| US5313480A (en) | Stabilization apparatus and method for an SFS | |
| US9438005B1 (en) | Calibration of a tunable DBR laser | |
| US7515620B2 (en) | Method for optimizing laser diode operating current | |
| JPS6278893A (ja) | 半導体レ−ザの選別方法 | |
| EP1087477B1 (en) | Semiconductor laser module | |
| US7242701B2 (en) | Laser wavelength control arrangement and method | |
| CN1340231A (zh) | 锁定波长和监测可调谐激光器的模式的方法 | |
| US6829262B1 (en) | Aging in tunable semiconductor lasers | |
| Grynberg et al. | Two-photon optically pumped laser | |
| McAleavey et al. | Extremely high sensitivity gas detection at 2.3 μm using a grazing incidence Tm3+ fibre laser cavity | |
| JPH10229237A (ja) | 光増幅装置並びに光増幅器利得制御方法及び装置 | |
| Wysocki et al. | 1.55-um broadband fiber sources pumped near 980 nm | |
| EP1772932B1 (en) | Light source for optical communication and its wavelength monitoring/controlling method | |
| JPS61102081A (ja) | 半導体レ−ザの周波数安定化方法 | |
| JP2643379B2 (ja) | 分布帰還型半導体レーザの検査方法 | |
| JP2522046B2 (ja) | 分布帰還型半導体レ―ザの選別方法 | |
| JPH10332584A (ja) | リングレーザ型ガスセンサ | |
| Goodwin et al. | Threshold variations in diode lasers induced by external resonator feedback |