JPH047112B2 - - Google Patents

Info

Publication number
JPH047112B2
JPH047112B2 JP21988985A JP21988985A JPH047112B2 JP H047112 B2 JPH047112 B2 JP H047112B2 JP 21988985 A JP21988985 A JP 21988985A JP 21988985 A JP21988985 A JP 21988985A JP H047112 B2 JPH047112 B2 JP H047112B2
Authority
JP
Japan
Prior art keywords
mode
emission spectrum
oscillation
axis
axis mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP21988985A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6278893A (ja
Inventor
Ikuo Mito
Masayuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP21988985A priority Critical patent/JPS6278893A/ja
Publication of JPS6278893A publication Critical patent/JPS6278893A/ja
Publication of JPH047112B2 publication Critical patent/JPH047112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/0014Measuring characteristics or properties thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Lasers (AREA)
JP21988985A 1985-10-01 1985-10-01 半導体レ−ザの選別方法 Granted JPS6278893A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21988985A JPS6278893A (ja) 1985-10-01 1985-10-01 半導体レ−ザの選別方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21988985A JPS6278893A (ja) 1985-10-01 1985-10-01 半導体レ−ザの選別方法

Publications (2)

Publication Number Publication Date
JPS6278893A JPS6278893A (ja) 1987-04-11
JPH047112B2 true JPH047112B2 (enExample) 1992-02-07

Family

ID=16742633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21988985A Granted JPS6278893A (ja) 1985-10-01 1985-10-01 半導体レ−ザの選別方法

Country Status (1)

Country Link
JP (1) JPS6278893A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2522046B2 (ja) * 1989-04-27 1996-08-07 日本電気株式会社 分布帰還型半導体レ―ザの選別方法
US5014015A (en) * 1989-12-05 1991-05-07 Tektronix, Inc. Ultra-short optical pulse source
US5056101A (en) * 1990-09-19 1991-10-08 At&T Bell Laboratories Mode partition screening apparatus

Also Published As

Publication number Publication date
JPS6278893A (ja) 1987-04-11

Similar Documents

Publication Publication Date Title
US5771250A (en) Laser light source apparatus, OTDR apparatus, and optical communication line inspection system
US7333680B2 (en) Fiber Bragg grating sensor system
US6188705B1 (en) Fiber grating coupled light source capable of tunable, single frequency operation
US6782017B1 (en) Wavelength locker and wavelength discriminating apparatus
JP3343166B2 (ja) 半導体レ−ザを有するシステム
EP0670642B1 (en) Light-emitting apparatus capable of selecting polarization direction, optical communication system, and polarization modulation control method
US6246816B1 (en) Wavelength stabilized laser light source
US5313480A (en) Stabilization apparatus and method for an SFS
US9438005B1 (en) Calibration of a tunable DBR laser
US6518563B1 (en) Detecting aging of optical components
Zhang et al. Fast wavelength switching of three-section DBR lasers
EP1087477B1 (en) Semiconductor laser module
JPH047112B2 (enExample)
CN1340231A (zh) 锁定波长和监测可调谐激光器的模式的方法
US7515620B2 (en) Method for optimizing laser diode operating current
US7242701B2 (en) Laser wavelength control arrangement and method
US6829262B1 (en) Aging in tunable semiconductor lasers
JPH10229237A (ja) 光増幅装置並びに光増幅器利得制御方法及び装置
JP2522046B2 (ja) 分布帰還型半導体レ―ザの選別方法
JPS61102081A (ja) 半導体レ−ザの周波数安定化方法
JPH07221370A (ja) 半導体レーザの長距離伝送評価方法及び評価装置
JP2643379B2 (ja) 分布帰還型半導体レーザの検査方法
JP3232546B2 (ja) Otdr装置
JPS61172389A (ja) 光送信回路
Buckland et al. Measurement of wavelength variation of mode field radius using far-field pattern method