JPS627721A - Semiconductor sealing material - Google Patents

Semiconductor sealing material

Info

Publication number
JPS627721A
JPS627721A JP60146638A JP14663885A JPS627721A JP S627721 A JPS627721 A JP S627721A JP 60146638 A JP60146638 A JP 60146638A JP 14663885 A JP14663885 A JP 14663885A JP S627721 A JPS627721 A JP S627721A
Authority
JP
Japan
Prior art keywords
epoxy resin
ppm
resin
content
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60146638A
Other languages
Japanese (ja)
Inventor
Shinji Oishi
真司 大石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP60146638A priority Critical patent/JPS627721A/en
Publication of JPS627721A publication Critical patent/JPS627721A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To provide the titled material of high performance in both heat cycle and pressure cooker characteristics, comprising flexible liquid epoxy resin, filler, and curing agent, with its cured product limited in both contents of Na<+> and Cl<-> ions. CONSTITUTION:The objective sealing material comprising (A) 100pts.wt. of a liquid epoxy resin including flexible one (e.g., polybutadiene-modified epoxy resin), (B) pref. 20-30pts.wt. of filler (e.g., molten silica), and (C) a curing agent (an acid anhydride or aromatic amine) with its cured product containing <=10ppm of Na<+> ion and <=300ppm of Cl<-> ion and having a Shore D hardness pref. 50-80. For limiting the contents of Na<+> and Cl<-> ions, it is recommended that the resin A be purified to effect the contents of the Na<+> and Cl<-> ions <=1ppm and <=500ppm, respectively.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体封止材料に関し、特にヒートサイクル
性とPCT性の調和のとれた半導体封止材料に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor encapsulation material, and particularly to a semiconductor encapsulation material that has a good balance between heat cycle properties and PCT properties.

〔従来技術〕[Prior art]

従来、半導体封止材料としてはセラミック封止やキャン
封止が行われていたが、近年樹脂封止が行われるように
なシ、経済性および特性の面よシェフキシ樹脂が多用さ
れるようになってきた。
Conventionally, ceramic encapsulation and can encapsulation have been used as semiconductor encapsulation materials, but in recent years resin encapsulation has begun to be used, and Scheffexy resin has become widely used due to its economic efficiency and characteristics. It's here.

このような半導体封止用エポキシ樹脂としては、クレゾ
ールノボラックエポキシ樹脂、脂環式エポキシ樹脂とフ
ェノール樹脂、アミン等とを配合して用いられるが、プ
レッシャクツカーテスト(PCT )の特性とヒートサ
イクル性の調和が難しく、PCT特性を重視すると、ヒ
ートサイクルにおいてクラックを発生する等の不都合が
多い。
Such epoxy resins for semiconductor encapsulation are used by blending cresol novolac epoxy resins, alicyclic epoxy resins, phenol resins, amines, etc. It is difficult to harmonize the PCT characteristics, and if emphasis is placed on PCT characteristics, there are many problems such as cracks occurring during heat cycles.

〔発明の目的〕[Purpose of the invention]

本発明者らは、従来不十分であったPCT特性とヒート
サイクル性とを改良するために種々研究した結果、エポ
キシ樹脂組成物中のNa十及びCl−1の含有量を抑え
、エポキシ樹脂に可撓性を与える  □ことKよりPC
T特性とヒートサイクル性が共に良好に保ち得るとの結
論に到達し、本発明を完成したものである。
As a result of various studies to improve PCT properties and heat cycle properties, which were previously insufficient, the inventors of the present invention suppressed the content of Na-1 and Cl-1 in epoxy resin compositions and Gives flexibility □ PC from K
The present invention was completed by reaching the conclusion that both T characteristics and heat cycle properties could be maintained well.

〔発明の構成〕[Structure of the invention]

本発明は、可撓性液状エポキシ樹脂を含む液状エポキシ
樹脂、充填材及び硬化剤としての酸無  □水物あるい
は芳香族アミンからなる加熱硬化型工  □ダキシ樹脂
組成物であって、この組成物の硬化物のNa+含有量が
10 ppm以下、ct−含有量が300ppm以下で
あることを特徴とする半導体封止材料である。本発明に
使用される可撓性液状エポキシ樹脂は可撓性を有し、分
子中に2個以上のエポキシ基を有する化合物であれば特
に限定されないが、Na十含有量1 ppm以下、Cl
−含有量500 ppm以下のものが好ましい。かかる
可撓性液状エポキシ樹脂としては、例えばヒリブタジエ
ン変性エピキシ樹脂、ゴム変性ニブキシ樹脂、ウレタン
変性工ぽキシ樹脂等を例示する事が出来る。これらの可
撓性液状エイキシ樹脂をそのまま用いてもよいが、通常
液状エポキシ樹脂との混和物として用いる。
The present invention relates to a thermosetting resin composition comprising a liquid epoxy resin including a flexible liquid epoxy resin, an acid-free □hydrate or an aromatic amine as a filler and a hardening agent, A semiconductor encapsulating material characterized in that the cured product has an Na+ content of 10 ppm or less and a ct- content of 300 ppm or less. The flexible liquid epoxy resin used in the present invention is not particularly limited as long as it has flexibility and has two or more epoxy groups in the molecule, but it has a Na content of 1 ppm or less, a Cl content of 1 ppm or less,
- The content is preferably 500 ppm or less. Examples of such flexible liquid epoxy resin include hibutadiene-modified epixy resin, rubber-modified niboxy resin, and urethane-modified epoxy resin. Although these flexible liquid epoxy resins may be used as they are, they are usually used as a mixture with a liquid epoxy resin.

ここで使用される液状エポキシ樹脂は前述の可撓性液状
エポキシ樹脂と同様分子中に2個以上のエポキシ基を有
するものであれば特に限定されないが、Na+含有量1
 ppm以下、Cl−含有量500ppm以下のものが
好ましい。かかるエポキシ樹脂としては例えばノボラッ
ク型エイキシ樹脂、ビスフェノールAグリシジル型エピ
キシ樹脂、ビスフェノールFグリシジルエーテル型エポ
キシ樹脂、脂m式エポキシ樹脂等を例示することが出来
る。充填材はアルミナ、シリカ等であシ、中でも吸水性
の小さい溶融シリカが最適である。その粒度は1〜10
 o、yのものが好ましく使用される。添加量は全エピ
キシ樹脂100重量部に対して20〜300重量部が好
ましい。硬化剤は酸無水物または芳香族アミンが使用さ
れる。
The liquid epoxy resin used here is not particularly limited as long as it has two or more epoxy groups in the molecule like the above-mentioned flexible liquid epoxy resin, but the Na+ content is 1
Preferably, the Cl- content is 500 ppm or less. Examples of such epoxy resins include novolac type epoxy resins, bisphenol A glycidyl type epoxy resins, bisphenol F glycidyl ether type epoxy resins, and fatty m type epoxy resins. The filler may be alumina, silica, etc., of which fused silica, which has low water absorption, is most suitable. Its particle size is 1-10
o and y are preferably used. The amount added is preferably 20 to 300 parts by weight based on 100 parts by weight of the total epixy resin. As the curing agent, acid anhydride or aromatic amine is used.

本発明のエポキシ樹脂組成物においては、硬化物として
適度な可撓性をもったものが得られるが、シ冒アD硬度
50〜80のものが最適である。
In the epoxy resin composition of the present invention, a cured product having appropriate flexibility can be obtained, but one having a sear D hardness of 50 to 80 is optimal.

前記成分の他に、反応性希釈剤、顔料、揺変性付与剤等
を添加する場合も本発明に含まれる。
In addition to the above components, the present invention also includes the addition of reactive diluents, pigments, thixotropy imparting agents, and the like.

本発明のニーキシ樹脂組成物は、その硬化物のNa+含
有量が10 ppm以下、ct−含有量が300ppm
以下であることが必要である。本発明の組成物の各成分
において、Na中、CL−の含有量の多いのはエポキシ
樹脂であシ、他の成分についてはNa中、Cl−の含有
量が少なく、事実上無視できる。
The Nixi resin composition of the present invention has a cured product with an Na+ content of 10 ppm or less and a ct- content of 300 ppm.
It is necessary that the following is true. Among the components of the composition of the present invention, the epoxy resin has a high content of CL- in Na, while the other components have a low content of Cl- in Na and can be virtually ignored.

本発明において、エイキシ樹脂は精製して、Na中及び
Cl−をできる限シ少なくする必要があるが、前述の如
く、Na” 1 ppm以下、C1−500ppm以下
とするのが好ましい。前記の硬化物中Na+含有量が1
0 ppm以下、Cl−含有量が300 ppmとした
のは、これ以上のNa中、Cl−を含有していると、半
導体素子を汚染し、半導体素子の信頼性寿命を短くする
傾向が現われるためである。
In the present invention, it is necessary to refine the eixy resin to reduce Na and Cl to as much as possible, but as mentioned above, it is preferable that the Na content is 1 ppm or less and the Cl content is 500 ppm or less. Na+ content in the substance is 1
The reason for setting the Cl- content to 0 ppm or less and 300 ppm is because if Na contains more Cl-, it tends to contaminate the semiconductor element and shorten the reliability life of the semiconductor element. It is.

〔発明の効果〕〔Effect of the invention〕

本発明は次のような効果を有する。 The present invention has the following effects.

1、 Na”、Cl−含有量が少ないので、PCTにお
ける吸水量が非常に少なく、半導体素子の保護としては
最適である。吸水性の小さい充填材を使うと、なおのこ
と好ましい。
1. Since the content of Na'' and Cl- is low, the amount of water absorbed in PCT is very small, making it optimal for protecting semiconductor devices. It is even more preferable to use fillers with low water absorption.

2、エイキシ樹脂に可撓性を与えているためヒートサイ
クル性に優れておシ、応力が直接半導体素子に伝わらず
、半導体素子を破壊する恐れがない。
2. Since the Eixy resin has flexibility, it has excellent heat cycle properties, and stress is not directly transmitted to the semiconductor element, so there is no risk of destroying the semiconductor element.

3、 PCT特性及びヒートサイクル性が共に優れてい
るため、半導体封止材料として最適である。
3. It has excellent PCT characteristics and heat cycle properties, making it ideal as a semiconductor encapsulation material.

〔実施例〕〔Example〕

実施例1,2及び比較例1として、以下の配合のエポキ
シ樹脂組成物を使用した。「部」は「重量部」を表す。
As Examples 1 and 2 and Comparative Example 1, epoxy resin compositions having the following formulations were used. "Parts" represent "parts by weight."

実施例1 ピリブタジェン変性ニブキシ樹脂     100部 
   =(エポキシ当量370) ヘキサヒドロフタル酸無水物        50部2
−エチル−4−メチルイミダゾール      2部溶
融シリカ          200部硬イし物中のN
a”            3 ppmCL−250
ppm 実施例2 ビスフェノールF型エデキシ樹脂      75部(
エポキシ当量170) 脂肪族アルキル変性ビスフェノールA     25部
型ニーキシ樹脂 (エポキシ当量325) ジアミノジフェニルメタン          30部
DMP−303部 溶融シリカ          200部硬化物中のN
a+45 ppm C1280ppm 比較例1 ビスフェノールA型エピキシ樹脂     100部(
エポキシ当量190) ヘキサヒドロフタル酸無水物        80部2
−エチル−4−メチルイミダゾール     2部炭酸
カルシウム        200部硬化物中のNa+
23 ppm C1−650ppm なお、実施例で使用したニーキシ樹脂は精製して、Na
+及びCl−をそれぞれ1 ppm以下及び500pp
m以下としたものを使用した。
Example 1 100 parts of pybutadiene-modified niboxy resin
= (Epoxy equivalent weight 370) Hexahydrophthalic anhydride 50 parts 2
-Ethyl-4-methylimidazole 2 parts fused silica 200 parts N in hardened material
a” 3 ppmCL-250
ppm Example 2 Bisphenol F type edexy resin 75 parts (
Epoxy equivalent: 170) Aliphatic alkyl-modified bisphenol A 25 parts Nixi resin (Epoxy equivalent: 325) Diaminodiphenylmethane 30 parts DMP-30 3 parts Fused silica 200 parts N in cured product
a+45 ppm C1280ppm Comparative Example 1 Bisphenol A type epixy resin 100 parts (
Epoxy equivalent: 190) Hexahydrophthalic anhydride 80 parts 2
-Ethyl-4-methylimidazole 2 parts Calcium carbonate 200 parts Na+ in cured product
23 ppm C1-650 ppm The Nixy resin used in the examples was purified and Na
+ and Cl- less than 1 ppm and 500 ppm, respectively
m or less was used.

実施例1.2及び比較例1の樹脂組成物を30X50X
10smのケースに注入し、120℃3時間で硬化させ
たものをす/プルとして使用した。
The resin compositions of Example 1.2 and Comparative Example 1 were
The mixture was injected into a 10 sm case, cured at 120°C for 3 hours, and used as Su/Pull.

表−1に示すように、PCT特性において、比較例1の
樹脂組成物は65時間後には溶解してしまったが、実施
例1.2の樹脂組成物は100時間後で各々0.58チ
、1.18チと非常に優れた値を示している。表−2に
示すようにヒートサイクルテストにおいては比較例1で
は75サイクルで全てクラックが発生しているが、実施
例1.2では100サイクル後においてもクラックの発
生はみられなかうた。
As shown in Table 1, in terms of PCT characteristics, the resin composition of Comparative Example 1 dissolved after 65 hours, but the resin composition of Example 1.2 each dissolved by 0.58% after 100 hours. , 1.18chi, which is an extremely excellent value. As shown in Table 2, in the heat cycle test, all cracks occurred in Comparative Example 1 after 75 cycles, but no cracks were observed in Example 1.2 even after 100 cycles.

表−1プレッシャークツカーテストにおける吸水率条件
:2.1atm125℃ 表−2ヒートショックテストにおけるクシツクの発生数
サンプル数:20個 条 件  ニー55℃1時間4+150℃1時間手続補
正書(自発) 昭和60年 8月 9日
Table-1 Water absorption rate in pressure shock test: 2.1 atm 125℃ Table-2 Number of samples in heat shock test Number of samples: 20 Conditions Knee 55℃ 1 hour 4 + 150℃ 1 hour Procedure amendment (voluntary) Showa August 9, 1960

Claims (1)

【特許請求の範囲】[Claims] 可撓性液状エポキシ樹脂を含む液状エポキシ樹脂、充填
材及び硬化剤としての酸無水物又は芳香族アミンから成
る加熱硬化型エポキシ樹脂組成物であって、この組成物
の硬化物のNa^+含有量が10ppm以下、Cl^−
含有量が300ppm以下であることを特徴とする半導
体封止材料。
A thermosetting epoxy resin composition comprising a liquid epoxy resin including a flexible liquid epoxy resin, a filler, and an acid anhydride or an aromatic amine as a hardening agent, the cured product of this composition containing Na^+ The amount is 10 ppm or less, Cl^-
A semiconductor encapsulation material having a content of 300 ppm or less.
JP60146638A 1985-07-05 1985-07-05 Semiconductor sealing material Pending JPS627721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60146638A JPS627721A (en) 1985-07-05 1985-07-05 Semiconductor sealing material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60146638A JPS627721A (en) 1985-07-05 1985-07-05 Semiconductor sealing material

Publications (1)

Publication Number Publication Date
JPS627721A true JPS627721A (en) 1987-01-14

Family

ID=15412249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60146638A Pending JPS627721A (en) 1985-07-05 1985-07-05 Semiconductor sealing material

Country Status (1)

Country Link
JP (1) JPS627721A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152120A (en) * 1987-12-09 1989-06-14 Sumitomo Bakelite Co Ltd Resin composition for sealing semiconductor
US5969059A (en) * 1997-03-14 1999-10-19 Kabushiki Kaisha Toshiba Impregnation resin composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152120A (en) * 1987-12-09 1989-06-14 Sumitomo Bakelite Co Ltd Resin composition for sealing semiconductor
US5969059A (en) * 1997-03-14 1999-10-19 Kabushiki Kaisha Toshiba Impregnation resin composition

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