JPS6275063U - - Google Patents
Info
- Publication number
- JPS6275063U JPS6275063U JP16564485U JP16564485U JPS6275063U JP S6275063 U JPS6275063 U JP S6275063U JP 16564485 U JP16564485 U JP 16564485U JP 16564485 U JP16564485 U JP 16564485U JP S6275063 U JPS6275063 U JP S6275063U
- Authority
- JP
- Japan
- Prior art keywords
- generating means
- field generating
- magnetic field
- target
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 3
- 239000010408 film Substances 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 230000003993 interaction Effects 0.000 claims 1
- 238000012856 packing Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は本考案の一実施例の電極構造を示す断
面図、第２図及び第３図は第１図の左半分の断面
図、第４図、第５図及び第６図は膜厚の分布を表
す図で横軸は基板半径方向の中心からの距離、縦
軸は膜厚を表す説明図である。
１…電磁石、２…ヨーク、３…バツキングプレ
ート(1)、４…バツキングプレート(2)、５…絶縁
材、６…ターゲツト(1)、７…ターゲツト(2)、１
３…電極、１４…電源、１５…電源。
Figure 1 is a sectional view showing the electrode structure of an embodiment of the present invention, Figures 2 and 3 are sectional views of the left half of Figure 1, and Figures 4, 5, and 6 are film thickness. The horizontal axis represents the distance from the center in the radial direction of the substrate, and the vertical axis represents the film thickness. DESCRIPTION OF SYMBOLS 1...Electromagnet, 2...Yoke, 3...Backing plate (1), 4...Backing plate (2), 5...Insulating material, 6...Target (1), 7...Target (2), 1
3...electrode, 14...power supply, 15...power supply.
Claims (1)
成り、磁界と電界との相互作用によりプラズマを
発生させ、ターゲツト面をスパツタして基板上に
薄膜を形成するマグネトロン型スパツタ用成膜装
置において、前記磁界発生手段として一個の磁石
を持ち、前記電界発生手段として絶縁材により互
いに電気的に絶縁された複数のパツキングプレー
トと、前記バツキングプレートに一つずつ対応し
、かつ、互いに電気的に絶縁されたターゲツトと
を持つことを特徴とする成膜装置の電極。 In a magnetron type sputtering film forming apparatus, which is composed of a magnetic field generating means, an electric field generating means, and a target, and generates plasma by interaction between the magnetic field and the electric field, and forms a thin film on a substrate by sputtering the target surface, the magnetic field generating means A plurality of packing plates each having one magnet as the means and electrically insulated from each other by an insulating material as the electric field generating means; An electrode for a film forming apparatus characterized by having a target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16564485U JPS6275063U (en) | 1985-10-30 | 1985-10-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16564485U JPS6275063U (en) | 1985-10-30 | 1985-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6275063U true JPS6275063U (en) | 1987-05-14 |
Family
ID=31095864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16564485U Pending JPS6275063U (en) | 1985-10-30 | 1985-10-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6275063U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000026430A1 (en) * | 1998-10-30 | 2000-05-11 | Applied Materials Inc. | Sputtering apparatus |
-
1985
- 1985-10-30 JP JP16564485U patent/JPS6275063U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000026430A1 (en) * | 1998-10-30 | 2000-05-11 | Applied Materials Inc. | Sputtering apparatus |
| US6506290B1 (en) | 1998-10-30 | 2003-01-14 | Applied Materials, Inc. | Sputtering apparatus with magnetron device |
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