JPS61291971A - Plane discharge electrode - Google Patents

Plane discharge electrode

Info

Publication number
JPS61291971A
JPS61291971A JP13168985A JP13168985A JPS61291971A JP S61291971 A JPS61291971 A JP S61291971A JP 13168985 A JP13168985 A JP 13168985A JP 13168985 A JP13168985 A JP 13168985A JP S61291971 A JPS61291971 A JP S61291971A
Authority
JP
Japan
Prior art keywords
target
magnet
plasma
magnets
generated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13168985A
Other languages
Japanese (ja)
Inventor
Yoshinori Ito
嘉規 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP13168985A priority Critical patent/JPS61291971A/en
Publication of JPS61291971A publication Critical patent/JPS61291971A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To generate plasma spirally hence uniformly by forming magnets connected with a rotational driving device to the double spiral shape so that the respective poles are alternately disposed at prescribed intervals. CONSTITUTION:A plane target 1 is provided as a cathode material. The magnets 2 constituted in such a manner that the N poles and S poles are spirally formed double and that the respective poles are radially and alternately disposed at the prescribed intervals are disposed on the bottom surface side of the target in proximity thereto. The magnets 2 are rotated along the target 1 by the rotational driving device 3 connected to the magnets 3 to move the spirally generated plasma 4 toward the outside or inside of the radial direction. The plasma 4 is generated and moved over the entire part above the target 1 and the target 1 material is uniformly splashed by such constitution. A material to be treated is thereby uniformly etched.

Description

【発明の詳細な説明】 (発明の技術分野) 本発明は平面放電陰極に係り、特にスパッタリング装置
等に適用されプラズマ放電を発生させる平面放電陰極に
関する。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a plane discharge cathode, and more particularly to a plane discharge cathode that is applied to a sputtering device and the like and generates plasma discharge.

〔発明の技術的背量とその問題点〕[Technical burden of the invention and its problems]

従来から放電陰極は、同心円状にマグネットを配置し、
このマグネットに近接して平面状の陰極材を配置するよ
うに構成されており、上記陰極材と別途配置した陽極と
の間に高電圧を印加することにより電界を発生させ、こ
の電界と上記マグネットにより発生する放射状磁界とが
直交する部分にプラズマ放電を発生させるものである。
Traditionally, discharge cathodes have magnets arranged concentrically,
A planar cathode material is placed close to this magnet, and an electric field is generated by applying a high voltage between the cathode material and a separately placed anode, and this electric field and the magnet A plasma discharge is generated in the area where the radial magnetic field generated by the radial magnetic field intersects perpendicularly.

このような放電陰極は、例えばスパッタリング装置やイ
オンエツチング装置等に適用され、スパッタリング装置
においては、上記陰極材としてターゲットを用いるとと
もに、陽極として被処理物を用い、上記プラズマ放電に
より上記ターゲット材料を飛散させて被処理物の膜形成
を行なうものである。
Such discharge cathodes are applied, for example, to sputtering equipment, ion etching equipment, etc. In sputtering equipment, the target is used as the cathode material, and the object to be processed is used as the anode, and the target material is scattered by the plasma discharge. This process forms a film on the object to be treated.

しかし、上記放電陰極においては、マグネットによる磁
界が固定されているため、プラズマが部分的に発生し、
ターゲット材料の飛散等を均一に行なうことができなか
った。
However, in the above-mentioned discharge cathode, since the magnetic field by the magnet is fixed, plasma is generated partially.
It was not possible to scatter the target material uniformly.

そのため従来、上記マグネットを偏心回転させて磁界を
移動させ、プラズマの発生部分を移動ざせるようにした
ものがあるが、完全に均一にプラズマを発生させること
ができなかった。
For this reason, in the past, there was a method in which the magnet was eccentrically rotated to move the magnetic field and move the plasma generating part, but it was not possible to generate plasma completely uniformly.

〔発明の目的〕[Purpose of the invention]

本発明は上記した点に鑑みてなされたもので、面均−に
プラズマ放電を発生させることのできる族1i陰極を提
供することを目的とするものである。
The present invention has been made in view of the above points, and an object of the present invention is to provide a Group 1i cathode that can generate plasma discharge uniformly over its surface.

(発明の概要) 上記目的達成のため本発明に係る平面放電陰極は、平面
状の陰極材に近接してマグネットを配置し、上記陰極材
と陽極との間に高電圧を印加することによりプラズマ放
電を発生させる平面放電陰極において、上記マグネット
を8極が半径方向に交互に配置されるとともに所定間隔
を有するように二重のうず巻き状に形成し、上記マグネ
ットにこのマグネットを上記陰極材に沿って回転させる
回転駆動装置を接続して構成されており、このマグネッ
ト形状により、うす巻き状にプラズマを発生させるよう
になされている。
(Summary of the Invention) In order to achieve the above object, the planar discharge cathode according to the present invention is provided by arranging a magnet close to a planar cathode material and applying a high voltage between the cathode material and the anode to generate a plasma. In the flat discharge cathode that generates a discharge, the magnet is formed into a double spiral shape with eight poles arranged alternately in the radial direction and at a predetermined interval, and the magnet is attached to the magnet along the cathode material. The magnet is connected to a rotary drive device that rotates the magnet, and the shape of the magnet generates plasma in a thinly wound shape.

(発明の実施例) 以下、本発明の実施例を第1図および第2図を参照して
説明する。
(Embodiments of the Invention) Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 and 2.

第1図は本発明をスパッタリング装置に適用した場合の
一実施例を示したもので、陰極材としての平面状ターゲ
ット1を設け、このターゲット1の下面側には、マグネ
ット2が近接して配置されている。このマグネット2は
、第2図に示ずように、N極およびS極を二重にうず巻
き状に形成しており、上記8極が半径方向に交互にかつ
所定間隔を有するように構成されている。また、上記マ
グネット2の下方には、このマグネット2を上記ターゲ
ット1に沿って2回転させるモータ等の回転駆動装M3
が接続されている。
FIG. 1 shows an embodiment in which the present invention is applied to a sputtering device, in which a planar target 1 is provided as a cathode material, and a magnet 2 is placed close to the lower surface of the target 1. has been done. As shown in FIG. 2, this magnet 2 has N and S poles formed in a double spiral shape, and the eight poles are arranged alternately in the radial direction and at a predetermined interval. There is. Further, below the magnet 2, a rotation drive device M3 such as a motor that rotates the magnet 2 twice along the target 1 is provided.
is connected.

本実施例においては、上記したように構成された放電陰
極を陽極としての被処理物(図示けず)に対向するよう
に高空容器内に配冒し、上記ターゲット1と上記被処理
物との間に図示しない電源から高電圧を印加する。する
と、上記ターゲット1と被処理物との間に電界が発生し
、この電界と上記マグネット1により発生する磁界とが
直交する部分にプラズマ4が発生する。そして、このプ
ラズマ4によりターゲット1材料を飛散させて被処理物
の膜形成を行なうものである。この場合、プラズマ4は
、上記マグネット2がうず巻き状に形成されているため
、うず巻き状に発生するものであり、さらに、回転駆動
装置3にマグネット2を回転させるため、上記うず巻き
状に発生したプラズマ4が半径方向外方あるいは内側に
移動する。
In this embodiment, the discharge cathode configured as described above is placed in a high-altitude container so as to face the object to be treated (not shown) serving as an anode, and is placed between the target 1 and the object to be treated. A high voltage is applied from a power source (not shown). Then, an electric field is generated between the target 1 and the object to be processed, and plasma 4 is generated in a portion where this electric field and the magnetic field generated by the magnet 1 are perpendicular to each other. Then, the material of the target 1 is scattered by this plasma 4 to form a film on the object to be processed. In this case, the plasma 4 is generated in a spiral shape because the magnet 2 is formed in a spiral shape, and since the magnet 2 is rotated by the rotation drive device 3, the plasma generated in the spiral shape is 4 moves radially outward or inward.

したがって、上記プラズマ4が、ターゲット1の上方に
全域にわたって発生し移動するので、ターゲット材料を
均一に飛散させることができ、被処理物の均一な膜形成
を行なうことが可能となる。
Therefore, since the plasma 4 is generated and moves over the entire area above the target 1, the target material can be uniformly scattered, and a uniform film can be formed on the object to be processed.

また、上記実施例においては、放電陰極をスパッタリン
グ装置に適用した場合について説明したが、イオンエツ
チング装置の電極として用いることもでき、このような
構成によれば、被処理物の均一なエツチングを行なうこ
とが可能となる。
Further, in the above embodiments, the case where the discharge cathode is applied to a sputtering device was explained, but it can also be used as an electrode of an ion etching device, and with such a configuration, uniform etching of the object to be processed can be performed. becomes possible.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明に係る平面放電陰極は、回転駆
動装置が接続されたマグネットを、8極が所定間隔をも
って交互に配置されるように二重のうず巻き状に形成す
るようにしたので、上記マグネットにより放射状の磁界
がうず巻き状に発生し、したがって、プラズマがうず巻
き状に発生する。
As described above, in the flat discharge cathode according to the present invention, the magnet connected to the rotation drive device is formed in a double spiral shape so that eight poles are alternately arranged at predetermined intervals. A radial magnetic field is generated in a spiral shape by the magnet, and therefore plasma is generated in a spiral shape.

そして、さらに、上記マグネットを回転させることによ
り、陰極材の全域にわたってプラズマが発生するため、
極めて均一なプラズマを発生させることができ、例えば
、スパッタリング装置に適用すれば均一な膜形成を行な
うことができ、イオンエツチング装置に適用すれば均一
なエツチングを行なうことができる等の効果を奏する。
Furthermore, by rotating the magnet, plasma is generated over the entire area of the cathode material.
Extremely uniform plasma can be generated, and, for example, when applied to a sputtering device, it is possible to form a uniform film, and when applied to an ion etching device, uniform etching can be performed.

【図面の簡単な説明】 第1図は本発明の一実施例を示すm断面図、第2図は第
1図のマグネットの平面図である。 1・・・ターゲット〜、2・・・マグネット、3・・・
回転駆動装置、4・・・プラズマ。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing one embodiment of the present invention, and FIG. 2 is a plan view of the magnet shown in FIG. 1. 1...Target~, 2...Magnet, 3...
Rotary drive device, 4... plasma.

Claims (1)

【特許請求の範囲】[Claims] 平面状の陰極材に近接してマグネットを配置し、上記陰
極材と陽極との間に高電圧を印加することによりプラズ
マ放電を発生させる平面放電陰極において、上記マグネ
ットを各極が半径方向に交互に配置されるとともに所定
間隔を有するように二重のうず巻き状に形成し、上記マ
グネットにこのマグネットを上記陰極材に沿って回転さ
せる回転駆動装置を接続したことを特徴とする平面放電
陰極。
In a flat discharge cathode, in which a magnet is placed close to a flat cathode material and a high voltage is applied between the cathode material and the anode to generate a plasma discharge, each pole alternates the magnets in the radial direction. A planar discharge cathode, characterized in that the magnet is arranged in a double spiral shape with a predetermined interval, and a rotation drive device is connected to the magnet to rotate the magnet along the cathode material.
JP13168985A 1985-06-19 1985-06-19 Plane discharge electrode Pending JPS61291971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13168985A JPS61291971A (en) 1985-06-19 1985-06-19 Plane discharge electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13168985A JPS61291971A (en) 1985-06-19 1985-06-19 Plane discharge electrode

Publications (1)

Publication Number Publication Date
JPS61291971A true JPS61291971A (en) 1986-12-22

Family

ID=15063909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13168985A Pending JPS61291971A (en) 1985-06-19 1985-06-19 Plane discharge electrode

Country Status (1)

Country Link
JP (1) JPS61291971A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01279752A (en) * 1988-04-30 1989-11-10 Nec Home Electron Ltd Method and device for sputtering
US5120417A (en) * 1990-02-28 1992-06-09 Anelva Corporation Magnetron sputtering apparatus and thin film depositing method
US5130005A (en) * 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
US5242566A (en) * 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
US5374343A (en) * 1992-05-15 1994-12-20 Anelva Corporation Magnetron cathode assembly

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01279752A (en) * 1988-04-30 1989-11-10 Nec Home Electron Ltd Method and device for sputtering
US5120417A (en) * 1990-02-28 1992-06-09 Anelva Corporation Magnetron sputtering apparatus and thin film depositing method
US5242566A (en) * 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
US5130005A (en) * 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
US5374343A (en) * 1992-05-15 1994-12-20 Anelva Corporation Magnetron cathode assembly

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