JPS6272536A - Production of high-purity quartz glass - Google Patents

Production of high-purity quartz glass

Info

Publication number
JPS6272536A
JPS6272536A JP21032885A JP21032885A JPS6272536A JP S6272536 A JPS6272536 A JP S6272536A JP 21032885 A JP21032885 A JP 21032885A JP 21032885 A JP21032885 A JP 21032885A JP S6272536 A JPS6272536 A JP S6272536A
Authority
JP
Japan
Prior art keywords
base material
quartz glass
heating furnace
temperature
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21032885A
Other languages
Japanese (ja)
Other versions
JPH0416416B2 (en
Inventor
Shigeyoshi Kobayashi
小林 重義
Masaaki Ikemura
政昭 池村
Susumu Hachiuma
八馬 進
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP21032885A priority Critical patent/JPS6272536A/en
Publication of JPS6272536A publication Critical patent/JPS6272536A/en
Publication of JPH0416416B2 publication Critical patent/JPH0416416B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/14Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1453Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01Manufacture of glass fibres or filaments
    • C03B37/012Manufacture of preforms for drawing fibres or filaments
    • C03B37/014Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01446Thermal after-treatment of preforms, e.g. dehydrating, consolidating, sintering
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01Manufacture of glass fibres or filaments
    • C03B37/012Manufacture of preforms for drawing fibres or filaments
    • C03B37/014Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01446Thermal after-treatment of preforms, e.g. dehydrating, consolidating, sintering
    • C03B37/0146Furnaces therefor, e.g. muffle tubes, furnace linings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)

Abstract

PURPOSE:To obtain the titled large-sized glass without generating any cracks and droppings by gradually heating a porous quartz glass base material formed by gas-phase reaction synthesis from the upper part to prebake the material and then heating the material from the lower end to vitrify the material. CONSTITUTION:A silicon compd. (e.g., silicon tetrachloride and trichlorosilane) is hydrolyzed in an oxyhydrogen flame in a reactor 9 and the formed line silica particles are deposited and accumulated on a starting member 10 to form the porous quartz glass base material 11. Then the base material 11 is gradually pulled up from the lower end of a heating furnace 20, heated by a heater 21 and prebaked. Then the prebaked base material 12 is lowered from the upper part of a heating furnace 30 and heated by a heater 31. Consequently, the prebaked base material 12 is gradually vitrified from the lower end part and the large-sized quartz glass 13 for a photomask substrate, etc., is produced.

Description

【発明の詳細な説明】 本発明は、気相反応合成法によって多孔質石英ガラス母
材を形成させ、これを加熱炉中で焼成して透明ガラスと
する高純度石英ガラスの製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing high-purity quartz glass, in which a porous quartz glass base material is formed by a gas phase reaction synthesis method, and the same is fired in a heating furnace to produce transparent glass. be.

[従来の技術] 従来より、石英ガラスを製造する方法の一つとして、気
相反応合成法により多孔質石英ガラス母材を形成し、こ
の母材を加熱してガラス化する方法が採用されている。
[Prior Art] Conventionally, one of the methods for manufacturing quartz glass has been to form a porous quartz glass base material by a vapor phase reaction synthesis method, and then heat this base material to vitrify it. There is.

すなわち、四塩化珪素等の珪素化合物を酸水素炎中で加
水分解させ、出発部材である石英製の種棒(以下出発部
材あるいは種棒と書く)の下端部にシリカ微粒子を付着
・堆積させて多孔質石英ガラス母材を形成する。そして
、この多孔質石英ガラス母材を加熱炉に入れ、ヒータで
加熱して母材を焼結することによりガラス化する方法で
ある。
That is, a silicon compound such as silicon tetrachloride is hydrolyzed in an oxyhydrogen flame, and silica fine particles are attached and deposited on the lower end of a starting member, a quartz seed rod (hereinafter referred to as starting member or seed rod). Form a porous quartz glass matrix. Then, this porous quartz glass base material is placed in a heating furnace and heated with a heater to sinter the base material, thereby vitrifying it.

光ファイバーなどの製造に際しては、VAD法といわれ
る石英ガラス製造方法が採用されている。この方法は、
気相反応合成法により種棒の下端部にシリカ微粒子を付
着φ堆積させて多孔質石英ガラス母材を形成させながら
、徐々に引上げてヒータ中を通し、母材の上部から徐々
にガラス化する方法である。この方法では、多孔質石英
ガラス母材の形成と、この母材のガラス化とを連続的に
行なえる利点がある。
When manufacturing optical fibers and the like, a silica glass manufacturing method called the VAD method is employed. This method is
Fine silica particles are attached and deposited on the lower end of the seed rod using the gas phase reaction synthesis method to form a porous quartz glass base material, which is then gradually pulled up and passed through a heater to gradually vitrify the base material starting from the top. It's a method. This method has the advantage that the formation of a porous quartz glass base material and the vitrification of this base material can be performed continuously.

[発明の解決しようとする問題点] しかしながら、フォトマスク基鈑などのように大型の石
英ガラスを製造しようとする場合、多孔質石英ガラスf
fJ材を大口径で長尺のものにする必要があり、その重
量は、例えば径が30cmで長さInの母材の場合1本
当り約14kg相当のものになる。このような大型の多
孔質石英ガラス母材をガラス化するに際して、上記VA
D法を採用し、ようとすると、母材を上部から加熱して
ガラス化するため、種棒の下端近傍が先に軟化して下方
につながる母材を支持することができず、下方の母材が
種棒の下端部近傍から分離して落下してしまう、これを
避ける手段として石英製種棒の径を太くすることも考え
られるが、 1400℃の温度条件下でL記母材を支持
させるためには種棒のコストが相当高くなり実際的には
困難である。
[Problems to be solved by the invention] However, when trying to manufacture large quartz glass such as a photomask substrate, porous quartz glass f
It is necessary to make the fJ material large in diameter and long, and its weight is equivalent to about 14 kg per piece in the case of a base material with a diameter of 30 cm and a length In, for example. When vitrifying such a large porous quartz glass base material, the above VA
When method D is used, the base material is heated from the top and vitrified, so the area near the bottom end of the seed rod softens first, making it impossible to support the base material that connects downward, and the base material below. As a way to prevent the material from separating from the vicinity of the lower end of the seed rod and falling, it is possible to increase the diameter of the quartz seed rod, but it is possible to support the L base material under a temperature condition of 1400℃. In order to do so, the cost of seed rods becomes considerably high and it is difficult in practice.

一方、上記問題を解決するた方法として、多孔質石英ガ
ラス母材を加熱炉の上部から挿入し前記母材をその底部
から徐々に透明ガラス化させつつ前記母材を下降させ種
棒の下端部が1400°Cの温度域に達した時点で下降
を停止する方法がある。しかし一般的に前述の方法によ
って製造される多孔質石英ガラス母材は十分な強度を有
しておらず、このような母材を炉の上部から挿入して一
段の工程で、焼成かつ透明ガラス化しようとすると炉内
の気流の乱れによる熱ショ成途中で多孔質石英ガラス母
材が崩れてしまい、大口径の石英ガラスを製造すること
が出来なかった。
On the other hand, as a method to solve the above problem, a porous quartz glass base material is inserted from the upper part of the heating furnace, and the base material is gradually turned into transparent glass from the bottom, and the base material is lowered and the lower end of the seed rod is lowered. There is a method of stopping the descent when the temperature reaches the 1400°C temperature range. However, the porous quartz glass base material generally manufactured by the above-mentioned method does not have sufficient strength, and such a base material is inserted from the top of the furnace in a single step to produce transparent glass. However, the porous quartz glass base material collapsed during heat forming due to the turbulence of the air flow in the furnace, making it impossible to produce large-diameter quartz glass.

本発明は上記の問題点を解決し、フォトマスクツ人板用
などの大型の高純度石英ガラスの製造方法を提供するこ
とを目的とするものである。
An object of the present invention is to solve the above-mentioned problems and provide a method for manufacturing large-sized high-purity quartz glass for use in photomasks and plates.

[問題点を解決するための手段] 本発明は前記した問題点を解決すべくなされたものであ
り、珪素化合物を酸水素炎中で加水分解して生成したシ
リカ微粒子を出発部材に付着・堆積させて多孔質石英ガ
ラス母材を形成させる第1の工程と、該母材を加熱炉の
下端部から徐々に引上げる方法により予備焼成する第2
の工程と、さらに前記予備焼成ずみの多孔質石英ガラス
母材(以F予備焼成母材と書く)を加熱炉の1部から下
降させる方法により前記予備焼成母材の下端部より徐々
に透明ガラス化する第3の工程とからなることを特徴と
する高純度石英ガラスの製造方法を提供するものである
[Means for Solving the Problems] The present invention has been made in order to solve the above-mentioned problems, and it involves attaching and depositing silica particles produced by hydrolyzing a silicon compound in an oxyhydrogen flame to a starting member. The first step is to form a porous quartz glass base material, and the second step is to pre-fire the base material by gradually pulling it up from the lower end of the heating furnace.
In addition, the pre-fired porous quartz glass base material (hereinafter referred to as "F pre-fired base material") is lowered from a part of the heating furnace to gradually form transparent glass from the lower end of the pre-fired base material. The present invention provides a method for producing high-purity quartz glass, which is characterized by comprising a third step of converting the quartz glass into a quartz glass.

本発明において、多孔質石英ガラスlす材は例えば第1
図に示すような装置によって製造される(第1の工程)
、すなわち、ポンベlおよびポンベ2から水素および#
素がマスフローコントローラー3,4を通して多重管バ
ーナ5に供給される。また四塩化珪素、トリクロロシラ
ン、四臭化珪素等の珪素化合物のガスが、タンク6から
ポンプ7により熱交換器8を通して予熱され多重管へ−
す5に供給される。多重管バーナ5は反15室9内にお
いて酸水素炎を形成し、珪素化合物を加水分解してシリ
カ微粒子を形成する。なお図示していないが、窒素、ア
ルゴン等の不活性ガスもバーナ5に供給され、これら珪
素化合物のキャリアガスとしであるいは酸水素炎中のエ
アーカーテンとして使用される。この加水分解反応の化
学式を珪素化合物が四塩化珪素である場合について示す
と次式の様になる。
In the present invention, the porous quartz glass material is, for example, the first
Manufactured by the equipment shown in the figure (first step)
, that is, hydrogen and # from pombe l and pombe 2
The raw material is supplied to a multi-tube burner 5 through mass flow controllers 3 and 4. In addition, gases of silicon compounds such as silicon tetrachloride, trichlorosilane, and silicon tetrabromide are preheated from the tank 6 by the pump 7 through the heat exchanger 8 and sent to the multiple pipes.
5. The multi-tube burner 5 forms an oxyhydrogen flame in the 15-sided chamber 9, and hydrolyzes the silicon compound to form silica fine particles. Although not shown, an inert gas such as nitrogen or argon is also supplied to the burner 5 and used as a carrier gas for these silicon compounds or as an air curtain in an oxyhydrogen flame. The chemical formula for this hydrolysis reaction when the silicon compound is silicon tetrachloride is as follows.

2H2÷02→2H20−−−−−−(1)2H20÷
5iC14→S i02◆4HC:I  −−−−−−
(2)このシリカ微粒子が反応室9で出発部材として鉛
直に懸下された石英製種棒10の下端部に付着・堆積し
て順次成長し、大口径の多孔質石英カラス母材11が形
成される。なお、反応によって発生する1ム酸は一、?
性ソーダ水と洗浄塔13で向流に接触して吸収除去され
る。
2H2÷02→2H20---(1)2H20÷
5iC14→S i02◆4HC:I --------
(2) The silica fine particles adhere to and accumulate on the lower end of the quartz seed rod 10 suspended vertically as a starting member in the reaction chamber 9 and grow sequentially, forming a large-diameter porous quartz glass base material 11. be done. In addition, 1 muic acid generated by the reaction is 1,?
It is brought into contact with the sodium chloride water in a countercurrent flow in the washing tower 13 and is absorbed and removed.

未発IJ+における第1の工程、第2の工程、第3の工
程を第2図に例示する。即ち第2図に示したようにt?
ii記方法により第1の工程で製造された多孔質石英ガ
ラスff部材11を″F補備焼成加熱炉20の下部に挿
入し、種棒10を回転させながら加熱炉20のL方に移
動させ、多孔質石英ガラス母材の上部より徐々に予備焼
成させたのち、前記加熱炉20の上部から予備焼成母材
11を抜き出すようにする。かかる予備焼成が終了した
のち、ただちに又は時間をおいて前記予備焼成lす材I
Iを透(11ガラス化用加熱炉30の上方まで移動し、
該母材11を加熱炉30の上部から挿入し、回転させな
がら加熱炉30の下部方向に移動させることにより前記
母材の下端部から徐々に透明ガラス化することにより高
純度な石英ガラスを製造する。なお、前記母材の種棒の
下端部近傍が加熱炉30の1400°C以上の高温域に
達した時点で前記下部方向への移動を停止させ、母材が
種棒から落下するのを防ぐ。
The first step, second step, and third step in undeveloped IJ+ are illustrated in FIG. 2. That is, as shown in FIG. 2, t?
The porous quartz glass FF member 11 manufactured in the first step according to the method described in ii is inserted into the lower part of the auxiliary firing furnace 20, and moved to the L direction of the heating furnace 20 while rotating the seed rod 10. After the porous quartz glass base material is pre-fired gradually from the upper part, the pre-fired base material 11 is extracted from the upper part of the heating furnace 20.After the pre-fired base material is finished, the pre-fired base material 11 is removed immediately or after some time. Said pre-fired material I
I (11) is moved above the vitrification heating furnace 30,
The base material 11 is inserted from the top of the heating furnace 30 and moved toward the bottom of the heating furnace 30 while being rotated, thereby gradually turning the base material into transparent glass from the lower end, thereby manufacturing high-purity quartz glass. do. In addition, when the vicinity of the lower end of the seed rod of the base material reaches the high temperature range of 1400° C. or more of the heating furnace 30, the movement in the lower direction is stopped to prevent the base material from falling from the seed rod. .

このように、多孔質石英ガラス母材を加熱炉の下部から
挿入し予備焼成したのち、透明ガラス化域の温度が14
00〜1500℃に保たれた加熱炉の上部から下方に移
動させて透明ガラス化するようにしたので1本焼成過程
で母材がこわれたり、又種棒が熱変形してガラス化時に
母材が落下したりすることがなくなる。さらにガラス化
に伴なって流出する気泡ないし気泡中の気体は、まだガ
ラス化されていない母材上部の多孔質層を通って上方へ
逃げることができるので、得られた石英ガラス中に気泡
等が含有されるのを防止できる。
In this way, after inserting the porous quartz glass base material from the bottom of the heating furnace and pre-firing it, the temperature in the transparent vitrification area was raised to 14.
Since the glass is moved downward from the top of the heating furnace, which is maintained at 00 to 1,500℃, the base material may be broken during the firing process, or the seed rod may be thermally deformed and the base material may be damaged during vitrification. will no longer fall. Furthermore, the bubbles or the gas in the bubbles that flow out during vitrification can escape upward through the porous layer above the base material that has not yet been vitrified. can be prevented from being contained.

本発明の好ましい態様によれば、多孔質石英ガラス母材
の予備焼成に用いる加熱炉は下部から上部に向けて高ま
る温度勾配をもつようにヒータが設けられている。この
ようにすれば、多孔質石英ガラス母材を加熱炉に挿入す
るに際し、11材の温度を徐々に高めていくことができ
、これにより急激な加熱により母材にクラックが発生す
るのを防止することができる。なお、温度勾配は多孔質
石英ガラスDJ材の挿入可能な温度が600℃以下であ
るため、炉の下部を500℃前後とし、1ξI材の焼結
温度が1100℃以上で、1400℃以−にの温度では
石英製種棒が熱変形しては材の重州に耐えられなくなる
ことから炉の上部の温度を1150〜1350℃にする
のが適当である。さらにまた、前記予備焼成に用いる加
熱炉は、該加熱炉内上部に七F方向に温度がほぼ均等な
均温域を設け、該均温域の下部から前記加熱炉内の下部
に向けて低下する温度勾配を有するものであってもよい
、この場合、予備焼成の作業条件の選択の自由度が高ま
る利点がある。
According to a preferred embodiment of the present invention, the heating furnace used for pre-firing the porous quartz glass base material is provided with a heater so as to have a temperature gradient increasing from the bottom to the top. In this way, when inserting the porous quartz glass base material into the heating furnace, it is possible to gradually increase the temperature of the 11 materials, thereby preventing cracks from occurring in the base material due to sudden heating. can do. As for the temperature gradient, since the temperature at which the porous quartz glass DJ material can be inserted is 600°C or lower, the lower part of the furnace is set at around 500°C, and the sintering temperature of the 1ξI material is 1100°C or higher, and the sintering temperature is 1400°C or higher. At this temperature, the quartz seed rod will be thermally deformed and will no longer be able to withstand the stress of the material. Furthermore, the heating furnace used for the preliminary firing is provided with a uniform temperature area in the upper part of the heating furnace where the temperature is almost uniform in the 7F direction, and the temperature decreases from the lower part of the uniform temperature area toward the lower part of the heating furnace. In this case, there is an advantage that the degree of freedom in selecting the working conditions for pre-firing increases.

L記温度分布を有する加熱炉内に多孔質石英ガラス母材
を徐々に引上げながら予備焼成を行なうが、この際の雰
囲気はクリーンな方が好ましく必要に応じてフィルター
等で節化された空気、窒素ガス又はその他の不活性ガス
を炉の下部より上方に向けて導入しながら行なう、引上
げ速度は加熱炉中段の温度レベルや均温域の長さによっ
ても異なるが、例えば温度が1300℃で均温域の長さ
が20cmの炉を用いた場合は250m厘/Hr前後が
適当である。
The porous quartz glass base material is gradually pulled up into a heating furnace having the temperature distribution shown in L for pre-firing, but it is preferable that the atmosphere at this time is clean, with air that has been conserved with a filter or the like as necessary. The pulling speed is carried out while introducing nitrogen gas or other inert gas upward from the bottom of the furnace.The rate of pulling varies depending on the temperature level in the middle stage of the heating furnace and the length of the equal temperature zone, but for example, when the temperature is 1300℃ and the temperature is equalized, When using a furnace with a temperature range of 20 cm, a temperature of around 250 m/Hr is appropriate.

かかる予備焼成を行なったのち隣接する加熱炉の上方に
母材を搬送し炉上部から下方に移動させることにより前
記母材を徐々に透明ガラス化するが、この際の炉内雰囲
気はHe濃度を70z以上好ましくは80〜90%に保
って行なう、この前記母材を徐々に透明ガラス化する際
の加熱炉はJ:部から下部にかけて高まる温度勾配が設
けられているようにするのが好ましい、この際の温度勾
配は、多孔質石英ガラス母材のガラス化温度が1400
℃以上であることから、加熱炉の上部を1200℃前後
、炉の下部の温度を1400〜1500℃にするのが適
当であり、焼成に際して種棒の下端部近傍が1400°
C以上の高温域に達した時点で下降を停止するのが適当
である。さらにまた、前記透明ガラス化に用いる加熱炉
は、該加熱炉内下部に上下方向に温度がほぼ均等な均温
域を設け、該均温域の上部から前記加熱炉内の上部に向
けて低下する温度勾配を有するものであってもよい、こ
の場合、透明ガラス化の作業条件の選択の自由度が高ま
る利点がある。
After performing such preliminary firing, the base material is transported to the upper part of the adjacent heating furnace and moved downward from the top of the furnace, thereby gradually turning the base material into transparent glass. At this time, the atmosphere in the furnace has a He concentration. 70z or more, preferably 80 to 90%, and the heating furnace used to gradually transform the base material into transparent vitrification is preferably provided with a temperature gradient that increases from the J: part to the lower part. The temperature gradient at this time is such that the vitrification temperature of the porous quartz glass base material is 1400
℃ or above, it is appropriate to set the temperature of the upper part of the heating furnace to around 1200℃ and the lower part of the furnace to 1400 to 1500℃.
It is appropriate to stop the descent when the temperature reaches a high temperature range of C or higher. Furthermore, the heating furnace used for transparent vitrification is provided with a uniform temperature area in the lower part of the heating furnace where the temperature is almost uniform in the vertical direction, and the temperature decreases from the upper part of the uniform temperature area toward the upper part of the heating furnace. In this case, there is an advantage that the degree of freedom in selecting the working conditions for transparent vitrification is increased.

[実施例] :52図(A) 、 (B) 、 (C) 、 (D)
には、多孔質母材から透明石英ガラスロッドまでを製造
する装置・工程が示されている。以下、本発明の実施例
を図に従って説明する。
[Example]: Figure 52 (A), (B), (C), (D)
shows the equipment and process for manufacturing everything from porous base materials to transparent quartz glass rods. Embodiments of the present invention will be described below with reference to the drawings.

i2図(A)に示すように、耐水素炎中で四塩化珪素を
加水分解させて石英製の種棒上にシリカの微粒子を堆積
・成長させて径が約30cm、長さ100cmの多孔質
石英ガラス母材11を形成させた。この母材を合成装2
19の上方に引上げたのち、種棒をジヨイント部15か
ら切りはなし、隣接する場所に設置された加熱炉20の
下部から挿入する。加熱炉20は下部から上部に向けて
高まる温度勾配を有しており、炉の下部が約500℃、
炉の上部の温度が約1300’Cになるように制御され
ている・第2図(B)に示すように種棒10をゆっくり
矢印方向に回転させながら、毎時l。
As shown in Fig. i2 (A), silicon tetrachloride is hydrolyzed in a hydrogen-resistant flame, and fine particles of silica are deposited and grown on a quartz seed rod to form a porous material with a diameter of approximately 30 cm and a length of 100 cm. A quartz glass base material 11 was formed. This base material is synthesized 2
19, the seed rod is cut from the joint portion 15 and inserted from the lower part of the heating furnace 20 installed at an adjacent location. The heating furnace 20 has a temperature gradient that increases from the bottom to the top, and the temperature at the bottom of the furnace is approximately 500°C;
The temperature at the upper part of the furnace is controlled to be approximately 1300'C. As shown in Figure 2 (B), the seed rod 10 is slowly rotated in the direction of the arrow, l/hour.

〜50c層の速度で上方に引上げることにより多孔質石
英ガラス母材11をヒータ内に徐々に挿入し予備焼成を
行なった。このため多孔質石英ガラス化温度は上部から
徐々に加熱され、該多孔質石英ガラス111材中の気泡
は外周方向又は下部の低温部に移動し、内部の気泡が脱
泡されて前記多孔質石英ガラス母材はオープンボアーを
残した状態で径方向・軸方向に収縮し1次に行なう透明
ガラス化が容易な予備焼成母材12となった。
The porous quartz glass base material 11 was gradually inserted into the heater by pulling upward at a speed of ~50 c layers, and preliminary firing was performed. Therefore, the porous quartz vitrification temperature is gradually heated from the upper part, and the air bubbles in the porous quartz glass 111 material move toward the outer periphery or to the lower low temperature part, and the air bubbles inside are defoamed and the porous quartz glass 111 is heated. The glass base material shrunk in the radial and axial directions with open bores remaining, resulting in a pre-fired base material 12 that can be easily transformed into transparent glass in the first step.

かかる予備焼成が終了したのち、前記母材を加熱炉20
の上部から抜き出し母材の寸法を測定した結果、径が2
1cmで長さ80cmであった。
After the preliminary firing is completed, the base material is placed in the heating furnace 20.
As a result of measuring the dimensions of the base material extracted from the top of the
It was 1 cm and the length was 80 cm.

第2図(C)に示すように、上記予備焼成母材12を隣
接する加熱炉30の上方に移動させ、種棒lOをゆっく
り回転させながら毎時およそ10c層の速度で加熱炉3
0の上部から徐々に下方に移動させヒータ31内に挿入
させることにより多孔質石英ガラス母材の下部より透明
ガラス化させた。
As shown in FIG. 2(C), the pre-fired base material 12 is moved above the adjacent heating furnace 30, and the heating furnace 3 is moved at a rate of about 10 c layers per hour while slowly rotating the seed rod IO.
By gradually moving the porous quartz glass base material downward from the top and inserting it into the heater 31, the lower part of the porous quartz glass base material was turned into transparent vitrification.

この加熱炉31は上記予備焼成母材12が充分挿入でき
る大きさを有しており、上部から下部に向けて高まる温
度勾配を有している。この温度勾配は加熱炉の上部が約
1200℃、下部が約1430℃になるように制御され
ている0図示されていない装置により、炉の下部よりヘ
リウムガスを毎時1.3m3/Hrの速度で導入し炉内
のヘリウム雰囲気が80〜90%になるように保たれて
いる。炉内で多孔質石英ガラス母材12は下端部から徐
々に加熱溶融して脱泡がなされ、母材12よりも径の小
さな透明石英ガラス13になる。この際、気泡はまだ透
明ガラス化していない上部の多孔質ガラス層を通って外
部に脱出するので、形成された石英ガラス中に気泡が混
入することはない。
The heating furnace 31 is large enough to allow the pre-fired base material 12 to be inserted therein, and has a temperature gradient that increases from the top to the bottom. This temperature gradient is controlled so that the upper part of the heating furnace is approximately 1200°C and the lower part is approximately 1430°C.Helium gas is supplied from the lower part of the furnace at a rate of 1.3 m3/Hr by a device not shown. The helium atmosphere inside the furnace is maintained at 80-90%. In the furnace, the porous quartz glass base material 12 is gradually heated and melted from the lower end to be degassed, and becomes a transparent quartz glass 13 having a smaller diameter than the base material 12. At this time, the air bubbles escape to the outside through the upper porous glass layer that has not yet become transparent vitrified, so that the air bubbles do not get mixed into the formed quartz glass.

第2図(D)に示すように、種棒lOの下端部近傍がヒ
ータ31の上端に達した時点で下降は停止し透明ガラス
化が終了する。従って種棒10の下端部近傍が加熱変形
することがなくなり、下方につながる石英ガラス13を
落下させることなく支持できる。また、種棒10の下端
部が熱変形するのを防止できる。
As shown in FIG. 2(D), when the vicinity of the lower end of the seed rod 10 reaches the upper end of the heater 31, the descent stops and transparent vitrification is completed. Therefore, the vicinity of the lower end of the seed rod 10 is prevented from being heated and deformed, and the quartz glass 13 connected below can be supported without falling. Further, thermal deformation of the lower end of the seed rod 10 can be prevented.

[発明の効果] 以上説明したように、本発明によれば多孔質石英ガラス
母材をL部から加熱して徐々に予備焼成し、次いで下端
部から加熱して透明ガラス化する二段焼成法を採用した
ので、大口径母材を焼成する際に急激な熱収縮により、
母材に割れが発生したり、種棒が1400℃以上の高温
にさらされて熱変形し、RI材が種棒下端部から落下し
たりするのを防止できる。
[Effects of the Invention] As explained above, according to the present invention, a two-stage firing method is employed in which a porous quartz glass base material is heated from the L part to gradually pre-fire it, and then heated from the lower end to make it transparent vitrified. Because of the rapid thermal contraction when firing large-diameter base materials,
It is possible to prevent the base material from cracking, the seed rod from being exposed to high temperatures of 1400° C. or higher and being thermally deformed, and the RI material from falling from the lower end of the seed rod.

また母材径の増大に伴い焼成時の径方向の温度差が大き
くなってくるが、本発明ではクローズドボアーが形成さ
れない条件下で多孔質石英ガラス母材を予備焼成して径
を収縮させているので、透明ガラス化時の径方向(外周
部と中心部)の温度差が小さくなり、脱泡が均一に進む
ので、高速で透明ガラス化しても、石英ガラス中に気泡
が混入するのを防止できる。
Furthermore, as the base material diameter increases, the temperature difference in the radial direction during firing increases, but in the present invention, the porous quartz glass base material is pre-fired under conditions that do not form closed bores to shrink the diameter. As a result, the temperature difference in the radial direction (outer periphery and center) during transparent vitrification is reduced, and degassing proceeds uniformly, preventing air bubbles from entering the quartz glass even when vitrifying it at high speed. It can be prevented.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は多孔質石英ガラス母材を得るための装置の一例
を示す説明図、第2図は本発明による透明石英ガラス製
造方法の実施例を示す説明図であり、(A)は多孔質石
英ガラス母材を得る装置・工程、(B)は予備焼成の装
置・工程、(G)と(D)は透明カラス化の装置φ工程
を示す説明図である。 9−−−−−一多孔質石英ガラスIri材合成反応器1
0−−−−−一出発部材1種棒 11−−−−−一多孔賀石英ガラスIJ材12−−−−
−一子備焼成ずみ多孔質石英ガラスLN1材13−−−
−−一透明石英ガラス 15−一一一一一ジョイント 20.30−−−一加熱炉 21.31−−−−ヒータ 枠胃の浄側内答に変更な乙2 手続−?111正書(方式) 昭和61年2月1宮日
FIG. 1 is an explanatory diagram showing an example of an apparatus for obtaining a porous quartz glass base material, and FIG. 2 is an explanatory diagram showing an example of the transparent quartz glass manufacturing method according to the present invention. FIG. 2 is an explanatory diagram showing an apparatus and process for obtaining a quartz glass base material, (B) an apparatus and process for pre-firing, and (G) and (D) an apparatus φ process for forming a transparent glass. 9-----Porous quartz glass Iri material synthesis reactor 1
0-------1 Starting member Class 1 rod 11-----1 Porous quartz glass IJ material 12----
-Ikkobi fired porous quartz glass LN1 material 13---
---1 Transparent quartz glass 15--11-11 Joint 20.30----1 Heating furnace 21.31---Change to the clean side of the heater frame 2 Procedures-? 111 Official Book (Method) February 1st, 1985

Claims (8)

【特許請求の範囲】[Claims] (1)珪素化合物を酸水素炎中で加水分解して生成した
シリカ微粒子を出発部材に付着・堆積させて多孔質石英
ガラス母材を形成させる第1の工程と、該母材を加熱炉
の下端部から徐々に引上げる方法により予備焼成する第
2の工程と、さらに前記予備焼成母材を加熱炉の上部か
ら下降させる方法により前記予備焼成母材の下端部より
徐々に透明ガラス化する第3の工程とからなることを特
徴とする高純度石英ガラスの製造方法。
(1) A first step in which silica fine particles produced by hydrolyzing a silicon compound in an oxyhydrogen flame are attached and deposited on a starting member to form a porous quartz glass base material, and the base material is placed in a heating furnace. a second step of pre-firing the pre-fired base material by gradually pulling it up from the lower end; and a second step of gradually turning the pre-fired base material into transparent vitrification from the lower end of the furnace by lowering the pre-fired base material from the upper part of the heating furnace. A method for manufacturing high-purity quartz glass, characterized by comprising the steps of 3.
(2)前記第2の工程において1150〜1350℃の
温度範囲で前記多孔質石英ガラス母材を予備焼成するこ
とを特徴とする特許請求の範囲第1項記載の高純度石英
ガラスの製造方法。
(2) The method for manufacturing high-purity quartz glass according to claim 1, characterized in that in the second step, the porous quartz glass base material is pre-fired at a temperature range of 1150 to 1350°C.
(3)前記第3の工程において1400〜1500℃の
温度範囲で前記予備焼成母材を徐々に透明ガラス化する
ことを特徴とする特許請求の範囲第1項記載の高純度石
英ガラスの製造方法。
(3) The method for manufacturing high-purity quartz glass according to claim 1, characterized in that in the third step, the pre-fired base material is gradually turned into transparent vitrification at a temperature range of 1400 to 1500°C. .
(4)前記第1の工程及び第2の工程において多孔質石
英ガラス母材を回転させることを特徴とする特許請求の
範囲第1項記載の高純度石英ガラスの製造方法。
(4) The method for manufacturing high-purity quartz glass according to claim 1, wherein the porous quartz glass base material is rotated in the first step and the second step.
(5)前記第2の工程の加熱炉が炉の下部より上部に向
けて高まる温度勾配を有することを特徴とする特許請求
の範囲第1項記載の高純度石英ガラスの製造方法。
(5) The method for manufacturing high-purity quartz glass according to claim 1, wherein the heating furnace in the second step has a temperature gradient that increases from the bottom to the top of the furnace.
(6)前記第3の工程の加熱炉が炉の上部より下部に向
けて高まる温度勾配を有することを特徴とする特許請求
の範囲第1項記載の高純度石英ガラスの製造方法。
(6) The method for manufacturing high-purity quartz glass according to claim 1, wherein the heating furnace in the third step has a temperature gradient that increases from the top to the bottom of the furnace.
(7)前記第2の工程の加熱炉が、該加熱炉の上部に上
下方法に温度がほぼ均等な均温域を有し、該均温域の下
部から前記加熱炉の下部に向けて低下する温度勾配を有
することを特徴とする特許請求の範囲第1項記載の高純
度石英ガラスの製造方法。
(7) The heating furnace of the second step has a uniform temperature area in the upper part of the heating furnace where the temperature is almost equal in the vertical direction, and the temperature decreases from the lower part of the uniform temperature area toward the lower part of the heating furnace. 2. The method for producing high-purity quartz glass according to claim 1, wherein the method has a temperature gradient of:
(8)前記第3の工程の加熱炉が、該加熱炉の下部に上
下方向に温度がほぼ均等な均温域を有し、該均温域の上
部から前記加熱炉の上部に向けて低下する温度勾配を有
することを特徴とする特許請求の範囲第1項記載の高純
度石英ガラスの製造方法。
(8) The heating furnace of the third step has a uniform temperature area in the lower part of the heating furnace where the temperature is almost uniform in the vertical direction, and the temperature decreases from the upper part of the uniform temperature area toward the upper part of the heating furnace. 2. The method for producing high-purity quartz glass according to claim 1, wherein the method has a temperature gradient of:
JP21032885A 1985-09-25 1985-09-25 Production of high-purity quartz glass Granted JPS6272536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21032885A JPS6272536A (en) 1985-09-25 1985-09-25 Production of high-purity quartz glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21032885A JPS6272536A (en) 1985-09-25 1985-09-25 Production of high-purity quartz glass

Publications (2)

Publication Number Publication Date
JPS6272536A true JPS6272536A (en) 1987-04-03
JPH0416416B2 JPH0416416B2 (en) 1992-03-24

Family

ID=16587598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21032885A Granted JPS6272536A (en) 1985-09-25 1985-09-25 Production of high-purity quartz glass

Country Status (1)

Country Link
JP (1) JPS6272536A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006088236A1 (en) * 2005-02-18 2006-08-24 Asahi Glass Co., Ltd. Process for producing synthetic quartz glass, jig for synthetic-quartz-glass production, and synthetic quartz glass for optical member
US7810356B2 (en) * 2005-02-08 2010-10-12 Asahi Glass Company, Limited Process and apparatus for producing porous quartz glass base
US7975507B2 (en) 2005-02-04 2011-07-12 Asahi Glass Company, Limited Process for producing synthetic quartz glass and synthetic quartz glass for optical member
JP2012087034A (en) * 2010-10-22 2012-05-10 Sumitomo Electric Ind Ltd Method for manufacturing glass perform

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59174538A (en) * 1983-03-24 1984-10-03 Hitachi Cable Ltd Manufacture of base material for optical fiber
JPS6217035A (en) * 1985-07-15 1987-01-26 Furukawa Electric Co Ltd:The Production of base material for optical fiber
JPS6230636A (en) * 1985-07-30 1987-02-09 Furukawa Electric Co Ltd:The Vitrification of optical fiber preform

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59174538A (en) * 1983-03-24 1984-10-03 Hitachi Cable Ltd Manufacture of base material for optical fiber
JPS6217035A (en) * 1985-07-15 1987-01-26 Furukawa Electric Co Ltd:The Production of base material for optical fiber
JPS6230636A (en) * 1985-07-30 1987-02-09 Furukawa Electric Co Ltd:The Vitrification of optical fiber preform

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7975507B2 (en) 2005-02-04 2011-07-12 Asahi Glass Company, Limited Process for producing synthetic quartz glass and synthetic quartz glass for optical member
US7810356B2 (en) * 2005-02-08 2010-10-12 Asahi Glass Company, Limited Process and apparatus for producing porous quartz glass base
KR101231479B1 (en) * 2005-02-08 2013-02-07 아사히 가라스 가부시키가이샤 Process and apparatus for producing porous quartz glass base
WO2006088236A1 (en) * 2005-02-18 2006-08-24 Asahi Glass Co., Ltd. Process for producing synthetic quartz glass, jig for synthetic-quartz-glass production, and synthetic quartz glass for optical member
US7992413B2 (en) 2005-02-18 2011-08-09 Asahi Glass Company, Limited Process for producing synthetic quartz glass
JP2012087034A (en) * 2010-10-22 2012-05-10 Sumitomo Electric Ind Ltd Method for manufacturing glass perform

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