JPS60215515A - Preparation of synthetic quartz mass and device therefor - Google Patents

Preparation of synthetic quartz mass and device therefor

Info

Publication number
JPS60215515A
JPS60215515A JP7160184A JP7160184A JPS60215515A JP S60215515 A JPS60215515 A JP S60215515A JP 7160184 A JP7160184 A JP 7160184A JP 7160184 A JP7160184 A JP 7160184A JP S60215515 A JPS60215515 A JP S60215515A
Authority
JP
Japan
Prior art keywords
oxygen gas
burner
gas
synthetic quartz
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7160184A
Other languages
Japanese (ja)
Other versions
JPH025694B2 (en
Inventor
Masahiro Ikeda
政弘 池田
Kenichi Hiroshima
広嶋 健一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SILICON KK
Mitsubishi Metal Corp
Original Assignee
NIPPON SILICON KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SILICON KK, Mitsubishi Metal Corp filed Critical NIPPON SILICON KK
Priority to JP7160184A priority Critical patent/JPS60215515A/en
Publication of JPS60215515A publication Critical patent/JPS60215515A/en
Publication of JPH025694B2 publication Critical patent/JPH025694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01Manufacture of glass fibres or filaments
    • C03B37/012Manufacture of preforms for drawing fibres or filaments
    • C03B37/014Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/01413Reactant delivery systems
    • C03B37/0142Reactant deposition burners
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/14Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415Reactant delivery systems
    • C03B19/1423Reactant deposition burners
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/04Multi-nested ports
    • C03B2207/06Concentric circular ports
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/04Multi-nested ports
    • C03B2207/08Recessed or protruding ports
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/04Multi-nested ports
    • C03B2207/12Nozzle or orifice plates
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/04Multi-nested ports
    • C03B2207/14Tapered or flared nozzles or ports angled to central burner axis
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/20Specific substances in specified ports, e.g. all gas flows specified
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/20Specific substances in specified ports, e.g. all gas flows specified
    • C03B2207/22Inert gas details
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00Glass deposition burners
    • C03B2207/36Fuel or oxidant details, e.g. flow rate, flow rate ratio, fuel additives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Silicon Compounds (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

PURPOSE:To obtain foamless synthetic quartz mass in high yield, by feeding a volatile silicon compound and an oxygen gas at the center of a burner, feeding an oxygen gas and a hydrogen gas around the center, feeding a sealing gas at the outside. CONSTITUTION:A volatile silicon compound is fed from the inner pipe 16 of double pipe structure and an oxygen gas from the outer pipe 17 at the central part of a burner. An oxygen gas is fed from the pipes 18 set at symmetrical positions around the center, and a hydrogen gas is fed from the pipe 19 to gaps between the oxygen gas streams. At the outermost side, an inert sealing gas is fed the space between the double outer pipes 15 and 20. The burner having this structure is used, silicon dioxide fine particles are formed in an oxyhydrogen flame, they are jetted to the target base plate, synthetic quartz mass is melted and formed. By this method, attachment of the silicon dioxide fine powder to the outer pipes is eliminated, and occurrence of remaining foams in the quartz mass is extremely reduced.

Description

【発明の詳細な説明】 技術分野 本発明は半導体用・マスク基鑵や光学用レンズなどの原
材料となる陰成石英素1繊の製1i1法及びその装置に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a 1i1 method for manufacturing negative quartz fiber, which is a raw material for semiconductor/mask substrates, optical lenses, etc., and an apparatus therefor.

従来技術とその欠点 従来の合成石英の製造法としては、四塩化ケイ素のよう
な揮発性ケイ素ハロゲン′吻を、酸水素炎中で気相加水
分解し、生成した二酸化ケイ木微粒子を燃焼熱によって
1 、800’C以上に加熱された石英ガラス又q合成
石英ガラスの回転する標的基盤上に吹きつけ、溶融成長
させることによって製造する方法が最も一般的である。
Conventional technology and its disadvantages Conventional methods for producing synthetic quartz include gas-phase hydrolysis of volatile silicon halogens such as silicon tetrachloride in an oxyhydrogen flame, and the generated silicon dioxide wood particles are heated using combustion heat. The most common method of manufacturing is by blowing onto a rotating target substrate of quartz glass or q synthetic quartz glass heated to 1,800'C or higher and causing it to melt and grow.

上記方法によれば、原料の四塩化ケイ素を精溜によって
J!!4多金嬉の含有量を減少させることができ、また
バーナに合成石英を用いることによって、不純物の混A
、をなくすことができるようになり、従来の天然水晶を
原料にした場合に比べて製品の純度が飛躍的に向トし、
残溜気泡の少ない高純度の合成石英素塊の製造がOT能
となった。しかしながら、この合成石英素塊を光学的用
途に用いる場合に、残溜する微量の気泡によって欠陥散
乱が発生し、光の透過率が低下する原因となっている。
According to the above method, J! ! By using synthetic quartz in the burner, it is possible to reduce the content of
, and the purity of the product is dramatically improved compared to when using conventional natural crystal as raw material.
The production of high-purity synthetic quartz blocks with few residual air bubbles has become an OT capability. However, when this synthetic quartz block is used for optical purposes, a small amount of remaining air bubbles causes defect scattering, which causes a decrease in light transmittance.

@1図は上記方法を実、悔するための装置全体の概略図
、第2図fal、 (b)および第3図fat、 lb
)はそれぞれ従来のバーナを示す概略図である。
@Figure 1 is a schematic diagram of the entire device for implementing the above method, Figure 2 is fal, (b), and Figure 3 is fat, lb.
) are schematic diagrams showing conventional burners, respectively.

第1図では1はバーナ、2は炉蓋、3は炉体、4は監視
窓、5は排気口、6は炉架台、7け支持棒、8Fi支持
台、9け基盤、10は合成石英素塊、11.13は酸素
ガス、12け四塩化ケイ素、】4け水素ガスである。第
2図及び@3図でid: 15 +−を外筒管、16は
内計、17け外管、18は酸素ガス供給管、19は水素
ガスの通路である。
In Figure 1, 1 is a burner, 2 is a furnace lid, 3 is a furnace body, 4 is a monitoring window, 5 is an exhaust port, 6 is a furnace stand, 7 support rods, 8Fi support stand, 9 support rods, 10 is synthetic quartz The elementary mass, 11.13, is oxygen gas, 12 silicon tetrachloride, and 4 hydrogen gas. In FIGS. 2 and 3, id: 15 +- is an outer tube, 16 is an inner tube, 17 is an outer tube, 18 is an oxygen gas supply tube, and 19 is a hydrogen gas passage.

本発明の目的 本発明者らはこのような残溜気(ijlの低減化を目的
とし、研究を市ねた結宋、残7i17気泡発生の原因が
素叱の生成過程でバーナ外筒管内側に付着した二酸化ケ
イ素の微粒り一炉内圧、ガス圧の変動、装置の震動等に
より41?出成長中の素塊溶融面トに落下し、溶融ガラ
ス化l−ない内に素叱中にIII(す1へ塘れ、時間の
経過と共に微粒の嚇合体表面にlyk着したガスが熱膨
張するためであることをμmした。
Purpose of the Invention The present inventors conducted research with the aim of reducing such residual air (ijl). Due to fluctuations in the internal pressure of the furnace, gas pressure, vibrations of the equipment, etc., fine particles of silicon dioxide adhering to the silica particles fell onto the molten surface of the 41. (Going to Step 1, it was determined that this is due to thermal expansion of the gas adhering to the coalesced surface of the fine particles as time passes.)

そこで、気泡生成の原因の一つである二酸化ケイ素の微
粒を石英ガラス製バーナの最外壁に付着させぬように、
ljg4図が示すように、外筒管15の外側にシール用
外筒管20を配j縦したバーナを製作した。このシール
用外筒’If2()には清浄な空気、酸素、アルゴンな
ど不燃性ガスを流し、その内側に流れている水素ガスを
周囲から包み、水素ガスの自然拡散を防イつつ合成6英
素塊を生成せしめたところ、二酸化ケイ素微粒り付着は
絶無となり、残溜気泡の発生が激減することを確認し、
本発明忙到達した。
Therefore, in order to prevent fine particles of silicon dioxide, which is one of the causes of bubble formation, from adhering to the outermost wall of the quartz glass burner,
As shown in Figure 4, a burner was manufactured in which a sealing outer tube 20 was arranged vertically on the outside of an outer tube 15. A non-flammable gas such as clean air, oxygen, or argon is passed through this sealing outer cylinder 'If2 (), and the hydrogen gas flowing inside is wrapped around it to prevent natural diffusion of the hydrogen gas. When we produced a raw mass, we confirmed that there was no adhesion of silicon dioxide fine particles and the generation of residual air bubbles was drastically reduced.
The invention has been completed.

本発明の構成 すなわち、本発明の製造法によれば、揮発性ケイ素化合
物と酸素ガスならびに酸素ガスと水素ガスゲバーナより
吹き出させ、酸水素炎中で二酸化ケイ素微粒子を生成さ
せ、・該二酸化ケイ素微粒子を回転する標的基盤上に吹
付け、溶融成長させることよりなる合成石英素塊の製造
法において、バーナ中心部では揮発性ケイ素化合物と酸
素ガスとを二重管状に供給するととも、にその周りでは
該中心部に討し、それぞれ対称位置で・g状に酸素ガス
を供給し、かつ該If素ガス流間の隙間に水素ガスを供
給し、さらに最外側ではイナート・シーリングガスな二
重管状に供、給するバーナを使用することを特徴とする
合成石英素塊の製造法、が得られ、着た、本発明の装置
によれば、揮発性ケイ素化合物と酸素ガスならびに酸素
ガスと水素ガスを吹き出すバーナと生成した二酸化ケイ
素微粒子を受け。
According to the structure of the present invention, that is, according to the production method of the present invention, volatile silicon compound and oxygen gas and oxygen gas and hydrogen gas are blown out from a gas burner to generate silicon dioxide fine particles in an oxyhydrogen flame. In the manufacturing method of synthetic quartz blocks, which involves spraying and melting growth on a rotating target base, a volatile silicon compound and oxygen gas are supplied in a double tube at the center of the burner, and around the Oxygen gas is supplied to the center in a symmetrical position, and hydrogen gas is supplied to the gap between the If elementary gas flows, and furthermore, an inert sealing gas is supplied to the outermost part in a double tube shape. According to the apparatus of the present invention, a method for producing a synthetic quartz block is obtained, which is characterized by using a burner that supplies volatile silicon compounds and oxygen gas, as well as oxygen gas and hydrogen gas. Receive the burner and generated silicon dioxide fine particles.

合成石英素塊とする回転標的的盤とよりなる合成石英素
塊の製造装置fにおいて、バーナ中心部に二重管構造状
に配置された1重発性ケイ素化合物を11(給する内管
及び酸素ガスを供給する外管と該外管を囲んで設けられ
た外fl−!fと核外・gと核外節管1111の空間に
該バーナ中心部に対し対称位置に配役された複数の酸素
ガス供給′gと該酸素ガス供給計量の空隙を流路とする
水素ガスjIt袷手段と該外1笥管の外@に設けられ、
該外筒管との間にイナート・シーリングガスな流すシー
ル用外時管とからなるバーナを装備したことを特徴とす
る合成石/A:51c塊)製造装置、が薄られる。
In an apparatus f for producing a synthetic quartz block, which includes a rotating target disk for producing a synthetic quartz block, a monopolymer silicon compound arranged in a double-tube structure at the center of the burner is placed in the center of the burner. A plurality of tubes arranged symmetrically with respect to the center of the burner are arranged in the space between the outer tube for supplying oxygen gas, the outer fl-!f, the nuclear outer g, and the nuclear outer segment tube 1111 provided surrounding the outer tube. Oxygen gas supply 'g and hydrogen gas jIt line means with a gap between the oxygen gas supply metering as a flow path and the outside of the pipe are provided,
A synthetic stone/A:51c block) manufacturing apparatus is equipped with a burner comprising a sealing outer tube through which an inert sealing gas flows between the outer tube and the outer tube.

本発明のバーナの1例として、第4図には中心管の周囲
に反応ガス供給管(酸素ガス11(給′#)を2重の同
心円上に配置【−だ例を示したが、該反応ガス供給管の
位置や数には制限はなく、外筒’915がシール用外筒
管2oで二1管構造となっていることが肝要である。ま
た、該反応ガス供給・ftは第4図及び第5図に示した
ごと(、各管平行でもよく、また傾斜してもよい。
As an example of the burner of the present invention, in FIG. There are no restrictions on the position or number of reaction gas supply pipes, and it is important that the outer cylinder '915 has a 21-pipe structure with the sealing outer cylinder pipe 2o. As shown in FIGS. 4 and 5, the tubes may be parallel to each other or may be inclined.

反応ガス供給管の材質は各種耐熱セラミックが使用でき
るが、合成石英が不純物混入の恐れがなく、かつ長時間
にわたる使用により、先端部が損鳴したとき、先端部を
切断加工して再使用することもできるので好適である。
Various heat-resistant ceramics can be used as the material for the reaction gas supply pipe, but synthetic quartz is free from the risk of contamination with impurities, and if the tip becomes damaged due to long-term use, the tip can be cut and reused. This is suitable because it can also be used.

反応管の各部に流すガスは、通常反応ガス供給管から酸
素ガスを供給し、その周囲から水素ガスを111:給し
て点火し、標的基盤9が所定温度に達すると、中心の反
応ガス供給管を酸素ガスより四塩化畦t )リクロルシ
ラン、モノシランなどの揮発性ケイ素・・ログン化合物
、水素化物などの珪素化合物に切り換え、酸水素炎で二
酸化ケイ素を生成させ、これを基盤9上に溶融堆積させ
て、合成石英素塊を製造した。このとき、シール用外筒
管20に流すイナート・シーリングガスは清浄な空気、
窒素%酸素、ヘリウム、アルゴン、などが好適で、水素
を用いると、外筒管15への二酸化ケイ素微粒の付着は
減少するものの、ある温度範囲の水素の作用により、石
英製外筒管15の先端部の劣化が著(−くなるため、バ
ーナの寿命を短縮し、好ましくない。本発明の方法によ
れば、水素ガスはイナート・シーリングガス中に閉じ込
めらJして、すべて酸素ガスと反応してし1うものと推
定される。
The gases flowing to each part of the reaction tube are normally supplied with oxygen gas from the reaction gas supply pipe, and hydrogen gas is supplied from the surroundings to ignite it. When the target substrate 9 reaches a predetermined temperature, the reaction gas supply from the center is carried out. Switch the tube from oxygen gas to a volatile silicon compound such as dichlorsilane or monosilane, or a silicon compound such as a hydride, generate silicon dioxide with an oxyhydrogen flame, and melt and deposit it on the base plate 9. In this way, a synthetic quartz block was produced. At this time, the inert sealing gas flowing into the sealing outer tube 20 is clean air,
Nitrogen% oxygen, helium, argon, etc. are preferable; if hydrogen is used, the adhesion of silicon dioxide particles to the outer tube 15 is reduced, but due to the action of hydrogen in a certain temperature range, the quartz outer tube 15 is This is undesirable because the tip deteriorates significantly (-), which shortens the life of the burner.According to the method of the present invention, hydrogen gas is trapped in the inert sealing gas and reacts completely with oxygen gas. It is estimated that this will occur.

本発明は、以上のごとく、気泡を含゛まない合成石英素
塊の製造法及びその装置dを提供するもので、その工業
的価値はきわめて大きい。
As described above, the present invention provides a method and apparatus d for producing a synthetic quartz block containing no air bubbles, and its industrial value is extremely large.

次に、本発明を実殉例によって具体的に説明するが、本
発明はその要旨を越えない限り、以Fの実施例によって
制限をうけるものではない。
Next, the present invention will be specifically explained using actual examples, but the present invention is not limited by the following embodiments unless it exceeds the gist thereof.

実施例 第4図の透明石英製バーナ(シール用外筒管20の外径
80 i++w )を用いて、合成石英ガラス素塊を製
造した。
Example A synthetic silica glass ingot was manufactured using the transparent quartz burner shown in FIG. 4 (outer diameter of sealing outer tube 20: 80 i++w).

反応ガス供給管16内に酸素ガス −* a * 0.
7 Nrn3/H1反応ガス供給117内に酸素ガス 
ease O03Nm’ /Hr反応反応ガス管給管1
8内素ガス11111111 2.5 NIn’/)I
r反応ガス共供給18周囲の外筒管15 ””i4.o
Nm、A(r(外径70朋、)内の水素ガス 最初バーナに上記流量で酸水素炎を形成させ、回転しつ
つある標的基盤が十分溶融温度釦加熱された状態になっ
てから反応ガス供給管16に精溜された四塩化ケイ素ガ
スを平均1700g/Hrで送入、反応時間7時間で外
径100in、高さ110絹の弾丸状の合成石英ガラス
素塊3,150gが優られた。
Oxygen gas -*a*0.
7 Oxygen gas in Nrn3/H1 reaction gas supply 117
ease O03Nm' /Hr reaction reaction gas pipe supply pipe 1
8 elemental gas 11111111 2.5 NIn'/)I
r Outer tube 15 around the reactant gas co-supply 18 ``''i4. o
Hydrogen gas in Nm, A (r (outer diameter 70 mm)) First, an oxyhydrogen flame is formed in the burner at the above flow rate, and after the rotating target base is sufficiently heated to the melting temperature button, the reaction gas is Rectified silicon tetrachloride gas was fed into the supply pipe 16 at an average rate of 1,700 g/Hr, and in a reaction time of 7 hours, a bullet-shaped synthetic quartz glass ingot of 3,150 g with an outer diameter of 100 inches and a height of 110 mm was produced. .

比:l!l12例 @4図fatの透明石英製バーナ(外筒・g15の外径
70關)を用いて、合成石英素塊を製造した。
Ratio:l! Example 12 @ Figure 4 A synthetic quartz block was produced using a fat transparent quartz burner (outer cylinder, g15 outer diameter: 70 mm).

反応ガス供給管16内に酸素ガス ・・骨・ O−7N
ma Al を反応ガス供給f17内に酸素ガス ・・
・・ 0.3Nm”/■r反応反応ガス管給管18内素
ガス ・・・・ 3.5 Nm” /)(r上記反応ガ
ス洪給管18の周囲の外筒管15内の水素ガス ・・・
・] 5.ONmす4(r最初バーナに上記流量で酸水
素炎を形成させ。
Oxygen gas in the reaction gas supply pipe 16... Bone O-7N
ma Al into the reaction gas supply f17 with oxygen gas...
... 0.3 Nm"/■r Reaction gas supply pipe 18 internal gas ... 3.5 Nm" /) (rHydrogen gas in the outer cylindrical pipe 15 around the above reaction gas supply pipe 18 ...
・] 5. ONm4(r) First, form an oxyhydrogen flame in the burner at the above flow rate.

回転する標的基盤が十分溶融温度に加熱された状態にな
ってから、反応ガス供給f]6に精溜された四塩化ケイ
素ガスを平均1 、1 (10、j/ /)(rで送入
、反応時間6時1141で外径90趨、高さ120 m
mの弾丸状の@−成石莢素・東1.1110.11’か
蒔られた。トFII3実m例および比較例で得られた合
Jzk石鍵素1曳について次のごとく比較E、た。
After the rotating target base is sufficiently heated to the melting temperature, rectified silicon tetrachloride gas is fed into the reaction gas supply f]6 at an average rate of 1,1 (10, j/ /) (r). , reaction time 6:1141, outer diameter 90 mm, height 120 m
A bullet-shaped @-Nariishi capsule east 1.1110.11' of m was sown. Comparison E was made as follows for the combination Jzk stone key element 1 obtained in the FII 3 actual example and the comparative example.

まず気泡については%l」併による倹介では比較例の試
料には大小約1()個はどの気INが紹められた。一方
、夾b1例の試料には4泡は認められず、シール用外筒
管の幼東がはつ、暑りと昭めらti、た。
First, with regard to air bubbles, approximately 1() of each size was introduced into the sample of the comparative example by parsimony by adding %l''. On the other hand, no bubbles were observed in the sample of 1 case, and the sealing outer cylinder tube was hot, hot and dry.

なお、歪脈橿について、三菱嵯気118−tillL/
〜すひずみ検査4を用いて、54!癩間及び比較$+1
の各試料を検査したが、ともに何ら藺められるものrま
なかった。
Regarding the strained veins, Mitsubishi Sake 118-tillL/
~Using strain test 4, 54! Leprosy and comparison $+1
Each sample was examined, but nothing was found.

以上述べた+[liす、シール用外筒gの1史用により
、二酸化ケイ素倣扮の外筒”Uへの付着は全くなくなり
、その結果合成した石英嵩塊中に気泡が見られることも
な(なり、看しい歩留の向上を達IJにすることができ
た。
As mentioned above, after one use of the sealing outer cylinder g, the adhesion of the silicon dioxide imitation to the outer cylinder "U" disappeared completely, and as a result, air bubbles were sometimes observed in the synthesized quartz bulk. Well, we were able to achieve a modest improvement in yield to IJ.

【図面の簡単な説明】[Brief explanation of drawings]

8g1図は一般的な合成石英素塊製着装置の概略図、第
2図ialは従来のバーナの一例の横断面図、同じ< 
+1311d falのA−A断面図、第3図falは
従来の別のバーナの横断面図、同じ<(b)はfalの
B−B断面図、第4図ialは本発明の一実症例のバー
ナの横断面図、同じ<(b)はta)υ)C−C断面図
、第5図fa)kよ本発明の別の実施例のバーナの横断
面図、同じ< fl>l I′if;+lの1〕−D断
面図である。 図において、 】 ・・・−バ − す 11.13−・・酸素ガス供
給管2 ・・・・炉 蓋 12・・・・揮発性ケイ素化
合物供給管 3・・・・炉 体 7°°°° 支 持 俸 17・・・・外管(酸素ガス
8・・・・支持台 供給管) 9 −−−− 、[l?J基盤 18・・・・酸素ガス
供給管]()・・・・合成石英素塊 19°−−−水素
”X4路20・・・・ シール用外筒管 2100イナート・シーリングガス (a−) $31 (b) ■購U吸 /6 /A、 (a−9
Figure 8g1 is a schematic diagram of a general synthetic quartz block manufacturing device, and Figure 2ial is a cross-sectional view of an example of a conventional burner.
+1311d A sectional view taken along line A-A of fal, Figure 3 ial is a cross-sectional view of another conventional burner, the same <(b) is a BB sectional view of fal, and Figure 4 ial is a cross-sectional view of an actual case of the present invention. Cross-sectional view of the burner, same < (b) is ta) υ) C-C cross-sectional view, Fig. 5 fa) k Cross-sectional view of the burner of another embodiment of the invention, same 1]-D sectional view of if;+l. In the figure: ]...-Base 11.13-...Oxygen gas supply pipe 2...Furnace lid 12...Volatile silicon compound supply pipe 3...Furnace body 7°°° ° Support salary 17... Outer tube (Oxygen gas 8... Support stand supply pipe) 9 -----, [l? J base 18...Oxygen gas supply pipe] ()...Synthetic quartz block 19°---Hydrogen"X4 path 20...Outer tube for sealing 2100 Inert sealing gas (a-) $31 (b) ■Purchase U /6 /A, (a-9

Claims (1)

【特許請求の範囲】 111 揮発性ケイ素化合物と酸素ガスならびに酸素ガ
スと水素ガスをバーナより吹き出させ、酸水素炎中で二
酸化ケイ素微粒子を生成させ、該二酸化ケイ素微粒子を
回転する標的基盤上に吹付け、・溶融成長させることよ
りなる合成石英素塊の製造法において、バーナ中心部で
は揮発性ケイ素化合物と酸素ガスとを二重管状に供給す
るとともにその周りでFia中心部に対し、それぞれ対
称位置で管状に酸素ガスを供給し、かつ該酸素ガス流間
の隙間に水素ガスを供給し、さらに最外側ではイナート
・シーリングガスを二重管状に供給するバーナな使用す
ることを特徴とする合成石英素塊の製造法。 (2)揮発性ケイ素化合物と酸素ガスならびに酸素ガス
と水素ガスを吹き出すバーナと生成した二酸化ケイX微
粒子を受け、合成石英素塊とする回転標的基盤とよりな
る合成石芙素1鬼の製造装置において、バーナ中心部に
二重f膚清状に配置された揮発性ケイ素化合物を供給す
る内管及びlv斌ガスを供給する外管と核外′#を囲ん
で設けられた外筒管と該外管と該外筒・質+f、tff
の空間に該バーナ中心部に対し対称位置に配設された複
数の酸素ガスIt−給管と該酸素ガス供給管間のくP隙
を流路とする水素ガス供給手段と核外節管の外側に設け
られ、該外筒管との間にイナート・シーリングガスな流
すシール用外筒管とからなるバ〜すを装備したことを特
徴とする合成石英素塊の製、・h装置。
[Claims] 111 Volatile silicon compound and oxygen gas as well as oxygen gas and hydrogen gas are blown out from a burner to generate silicon dioxide fine particles in an oxyhydrogen flame, and the silicon dioxide fine particles are blown onto a rotating target base. In the manufacturing method of synthetic quartz blocks, which involves attaching, melting, and growing, a volatile silicon compound and oxygen gas are supplied in a double tube form at the center of the burner, and around the burner, volatile silicon compounds and oxygen gas are supplied at symmetrical positions with respect to the center of the filament. Synthetic quartz characterized by using a burner that supplies oxygen gas in a double tube shape at the outermost side, supplies hydrogen gas in the gap between the oxygen gas flows, and further supplies inert sealing gas in a double tube shape at the outermost side. Manufacturing method of raw blocks. (2) In a synthetic stone quartz production device comprising a volatile silicon compound and oxygen gas, a burner that blows out oxygen gas and hydrogen gas, and a rotating target base that receives the generated silicon dioxide X fine particles and converts them into a synthetic quartz block, An inner tube for supplying a volatile silicon compound and an outer tube for supplying lv gas arranged in the center of the burner in a double-layer structure, and an outer cylinder tube provided surrounding the outer core. and the outer cylinder quality + f, tff
A plurality of oxygen gas It-supply pipes are arranged in a space symmetrically with respect to the center of the burner, and a hydrogen gas supply means with a gap P between the oxygen gas supply pipes as a flow path, and a nuclear outer segment pipe. 1. An apparatus for producing a synthetic quartz block, characterized in that it is equipped with a bath consisting of a sealing outer tube provided on the outside and inert sealing gas flowing between the outer tube and the outer tube.
JP7160184A 1984-04-10 1984-04-10 Preparation of synthetic quartz mass and device therefor Granted JPS60215515A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7160184A JPS60215515A (en) 1984-04-10 1984-04-10 Preparation of synthetic quartz mass and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7160184A JPS60215515A (en) 1984-04-10 1984-04-10 Preparation of synthetic quartz mass and device therefor

Publications (2)

Publication Number Publication Date
JPS60215515A true JPS60215515A (en) 1985-10-28
JPH025694B2 JPH025694B2 (en) 1990-02-05

Family

ID=13465336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7160184A Granted JPS60215515A (en) 1984-04-10 1984-04-10 Preparation of synthetic quartz mass and device therefor

Country Status (1)

Country Link
JP (1) JPS60215515A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10120429A (en) * 1996-10-17 1998-05-12 Shin Etsu Chem Co Ltd Burner for producing fine glass particle
EP1140715A4 (en) * 1998-09-22 2005-10-05 Corning Inc Burners for producing boules of fused silica glass
JP2008239479A (en) * 1998-08-24 2008-10-09 Asahi Glass Co Ltd Synthetic quartz glass optical member and its production method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3567574B2 (en) * 1995-12-26 2004-09-22 住友電気工業株式会社 Burner for synthesis of porous glass base material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10120429A (en) * 1996-10-17 1998-05-12 Shin Etsu Chem Co Ltd Burner for producing fine glass particle
JP2008239479A (en) * 1998-08-24 2008-10-09 Asahi Glass Co Ltd Synthetic quartz glass optical member and its production method
EP1140715A4 (en) * 1998-09-22 2005-10-05 Corning Inc Burners for producing boules of fused silica glass

Also Published As

Publication number Publication date
JPH025694B2 (en) 1990-02-05

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