JPS6271915U - - Google Patents

Info

Publication number
JPS6271915U
JPS6271915U JP16156985U JP16156985U JPS6271915U JP S6271915 U JPS6271915 U JP S6271915U JP 16156985 U JP16156985 U JP 16156985U JP 16156985 U JP16156985 U JP 16156985U JP S6271915 U JPS6271915 U JP S6271915U
Authority
JP
Japan
Prior art keywords
terminal
semiconductor amplifier
microwave semiconductor
radio wave
hybrid coupler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16156985U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16156985U priority Critical patent/JPS6271915U/ja
Publication of JPS6271915U publication Critical patent/JPS6271915U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、この考案の一実施例によるマイクロ
波半導体増幅器の構成を示す図、第2図は、受動
回路素子から成る負荷の具体例を示す図、第3図
は従来のバランス形構成のマイクロ波半導体増幅
器の構成を示す図、第4図は、従来のバランス形
構成のマイクロ波半導体増幅器とアンテナを接続
した場合の構成図である。 3はマイクロ波半導体増幅器、5は3dBハイ
ブリツド結合器、6は整合終端、7は出力端子、
9は受動回路素子から成る負荷である。なお、図
中、同一符号は同一又は相当部分を示す。
FIG. 1 is a diagram showing the configuration of a microwave semiconductor amplifier according to an embodiment of the invention, FIG. 2 is a diagram showing a specific example of a load consisting of passive circuit elements, and FIG. 3 is a diagram showing a conventional balanced configuration. FIG. 4, a diagram showing the configuration of a microwave semiconductor amplifier, is a configuration diagram when a conventional balanced microwave semiconductor amplifier and an antenna are connected. 3 is a microwave semiconductor amplifier, 5 is a 3 dB hybrid coupler, 6 is a matching termination, 7 is an output terminal,
9 is a load consisting of passive circuit elements. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 3dBハイブリツド結合器の4つの端子のうち
第1の端子より、マイクロ波半導体増幅器の出力
電波を入射し、上記3dBハイブリツド結合器の
第1の端子から入射した電波が伝搬しない第2の
端子には上記マイクロ波半導体増幅器の出力イン
ピーダンスに等しいインピーダンスを有する受動
回路素子から成る負荷を接続し、上記3dBハイ
ブリツド結合器の第1の端子から入射した電波の
1/2の電力が現われる第3の端子には整合終端
を接続し、残りの第4の端子を上記マイクロ波半
導体増幅器の出力端子としたことを特徴とするマ
イクロ波半導体増幅器。
The output radio wave of the microwave semiconductor amplifier is input to the first terminal of the four terminals of the 3 dB hybrid coupler, and the radio wave input from the first terminal of the 3 dB hybrid coupler does not propagate to the second terminal. A load consisting of a passive circuit element having an impedance equal to the output impedance of the microwave semiconductor amplifier is connected to the third terminal of the 3 dB hybrid coupler where 1/2 of the power of the radio wave incident from the first terminal appears. A microwave semiconductor amplifier characterized in that a matched termination is connected and the remaining fourth terminal is used as an output terminal of the microwave semiconductor amplifier.
JP16156985U 1985-10-21 1985-10-21 Pending JPS6271915U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16156985U JPS6271915U (en) 1985-10-21 1985-10-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16156985U JPS6271915U (en) 1985-10-21 1985-10-21

Publications (1)

Publication Number Publication Date
JPS6271915U true JPS6271915U (en) 1987-05-08

Family

ID=31088000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16156985U Pending JPS6271915U (en) 1985-10-21 1985-10-21

Country Status (1)

Country Link
JP (1) JPS6271915U (en)

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