JPS6271268A - 半導体装置の製法 - Google Patents

半導体装置の製法

Info

Publication number
JPS6271268A
JPS6271268A JP61117252A JP11725286A JPS6271268A JP S6271268 A JPS6271268 A JP S6271268A JP 61117252 A JP61117252 A JP 61117252A JP 11725286 A JP11725286 A JP 11725286A JP S6271268 A JPS6271268 A JP S6271268A
Authority
JP
Japan
Prior art keywords
region
circuit
film
main surface
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61117252A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0421350B2 (enrdf_load_stackoverflow
Inventor
Yuji Tanida
谷田　雄二
Takaaki Hagiwara
萩原　隆旦
Ryuji Kondo
近藤　隆二
Shinichi Minami
真一 南
Yokichi Ito
伊藤　容吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61117252A priority Critical patent/JPS6271268A/ja
Publication of JPS6271268A publication Critical patent/JPS6271268A/ja
Publication of JPH0421350B2 publication Critical patent/JPH0421350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates

Landscapes

  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP61117252A 1986-05-23 1986-05-23 半導体装置の製法 Granted JPS6271268A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61117252A JPS6271268A (ja) 1986-05-23 1986-05-23 半導体装置の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61117252A JPS6271268A (ja) 1986-05-23 1986-05-23 半導体装置の製法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6394179A Division JPS55156370A (en) 1979-05-25 1979-05-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS6271268A true JPS6271268A (ja) 1987-04-01
JPH0421350B2 JPH0421350B2 (enrdf_load_stackoverflow) 1992-04-09

Family

ID=14707161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61117252A Granted JPS6271268A (ja) 1986-05-23 1986-05-23 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPS6271268A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629472A (ja) * 1992-04-03 1994-02-04 Toshiba Corp 半導体装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629472A (ja) * 1992-04-03 1994-02-04 Toshiba Corp 半導体装置およびその製造方法
US5597757A (en) * 1992-04-03 1997-01-28 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device including bipolar and MOS transistors

Also Published As

Publication number Publication date
JPH0421350B2 (enrdf_load_stackoverflow) 1992-04-09

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