JPS6271215A - Wafer jointing apparatus - Google Patents
Wafer jointing apparatusInfo
- Publication number
- JPS6271215A JPS6271215A JP21143885A JP21143885A JPS6271215A JP S6271215 A JPS6271215 A JP S6271215A JP 21143885 A JP21143885 A JP 21143885A JP 21143885 A JP21143885 A JP 21143885A JP S6271215 A JPS6271215 A JP S6271215A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafers
- peripheral edge
- gradually
- bonding apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術分野）
本発明は、２枚のウェハを直接接合するための周知の如
く、鏡面研磨されたシリコン等の半導体ウェハを清浄な
条件下で接触させれば、強固な接合体が得られる。そし
て、この方法によれば、接着剤などの異種物質を介在さ
せる必要がないため、高温処理や各種化学処理が自由に
できる他、ウェハにｐ−ｎ接合や誘電埋込みなどが簡便
にできる等の多くの利点がある。Detailed Description of the Invention (Technical Field of the Invention) The present invention provides a method for directly bonding two wafers by bringing mirror-polished semiconductor wafers such as silicon into contact under clean conditions. , a strong bonded body can be obtained. According to this method, there is no need to use different substances such as adhesives, so high temperature processing and various chemical treatments can be performed freely, and p-n junctions and dielectric embedding can be easily performed on the wafer. There are many advantages.
ところで、２枚のウェハ同志を接合させる場合、一方の
ウェハを凸状に反らせることにより行なっている。第２
図は、この手段を用いたウェハ接合装置である。By the way, when two wafers are bonded together, one wafer is warped in a convex shape. Second
The figure shows a wafer bonding apparatus using this method.
図中の１は、内部に空洞部１ａを有した上面が球面形状
のウェハ支持具である。この支持具１上には、弾性体２
を介して第１のウェハ３が設けられている。このウェハ
３は、バキューム力によりその周縁部が下方向に湾曲す
るようになっている。1 in the figure is a wafer support having a spherical upper surface and having a cavity 1a inside. On this support 1, an elastic body 2
A first wafer 3 is provided through the wafer. The wafer 3 has its peripheral edge curved downward by the vacuum force.
前記第１のウェハ３上にはウェハホルダー５が設けられ
、該ウェハホルダー５の下面には第２のウェハ６が前記
第１のウェハ３と対向して水平に設けられている。なお
、図中の７は空洞部１ａに連通したバキューム通路を、
８はこの通路に連通する環状のバキューム溝である。A wafer holder 5 is provided on the first wafer 3, and a second wafer 6 is provided horizontally on the lower surface of the wafer holder 5, facing the first wafer 3. In addition, 7 in the figure indicates a vacuum passage communicating with the cavity 1a.
8 is an annular vacuum groove communicating with this passage.
しかしながら、従来技術によれば、次に示す問題点を有
する。即ち、第２図の装置では、第１のウェハ３を保持
する手段としてバキュームを用いているが、第１・第２
のウェハ３．６の中心部同志が接触すると、バキューム
がＯＦＦとなる。従っで、第１のウェハ３の弾性（復帰
力）により第１のウェハＪは急激に平面状に復帰するの
で、第１・第２のウェハ３．６の周辺部同志が先に接合
されてしまい、ウェハ中心部に大きな気泡が取り残され
る。However, the conventional technology has the following problems. That is, in the apparatus shown in FIG. 2, a vacuum is used as a means for holding the first wafer 3, but the
When the centers of the wafers 3.6 come into contact, the vacuum is turned off. Therefore, the elasticity (returning force) of the first wafer 3 causes the first wafer J to return to a flat shape rapidly, so that the peripheral parts of the first and second wafers 3.6 are bonded together first. This leaves a large air bubble in the center of the wafer.
本発明は上記事情に鑑みてなされたもので、ウェハ同志
を接合させる際、ウェハ中心部に気泡等の残留ガスが残
るのを回避できるウェハ接合装置を提供することを目的
とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a wafer bonding apparatus that can avoid residual gas such as bubbles from remaining in the center of the wafers when bonding wafers together.
本発明は、第１のウェハを弾性体を介して保持するウェ
ハ支持具と、前記ウェハと対向する第２を保持するウェ
ハホルダーとを有し、前記第１のウェハを凸状に変形し
て両ウェハの中心部同志を接触させた後、第１のウェハ
の復帰力にもとすいて両ウェハの周縁部同志も接触させ
て両ウェハを接合するウェハ治具において、第１のウェ
ハの周縁部の復帰力を除徐に解除する手段（具体的には
、偏芯カム、あるいはバキューム溝、バキューム通路）
を設けることにより、ウェハ同志の接合の際、ウェハ中
心部に気泡等の残留ガスの発生を回避することを図った
ものである。The present invention includes a wafer support that holds a first wafer via an elastic body, and a wafer holder that holds a second wafer facing the wafer, and the first wafer is deformed into a convex shape. In a wafer jig that joins both wafers by bringing the centers of both wafers into contact with each other and then bringing the peripheral parts of both wafers into contact depending on the restoring force of the first wafer, the peripheral edge of the first wafer is A means for gradually releasing the restoring force of the part (specifically, an eccentric cam, a vacuum groove, or a vacuum passage)
By providing this, it is possible to avoid the generation of residual gas such as bubbles in the center of the wafers when the wafers are bonded together.
以下、本発明の実施例を第１図（実施例１）、第３図（
実施例２）を参照して説明する。Examples of the present invention are shown below in Figure 1 (Example 1) and Figure 3 (Example 1).
This will be explained with reference to Example 2).
実施例１
■中の１１は、内部に空洞部１１ａを有したウェハ支持
具である。この支持具１１の上面は球面形状となってい
る。この支持具１１にはブラケット１２が固定され、該
ブラケット１２の上部にはノライドカップ１３が設けら
れている。このスライドカップ１３の下部には、偏芯カ
ムの一部を構成するベアリング１４が設けられている。Example 1 Reference numeral 11 in (1) is a wafer support having a cavity 11a inside. The upper surface of this support 11 has a spherical shape. A bracket 12 is fixed to this support 11, and a noride cup 13 is provided on the upper part of the bracket 12. A bearing 14, which constitutes a part of the eccentric cam, is provided at the lower part of the slide cup 13.
前記治具１１及びスライドカップ１３上には、弾性体と
しての吸着ゴム１５が前記支持具１１の上面に接するよ
うにセットされている。前記吸着ゴム１５には、前記空
洞部１１ａと連通する第１のバキューム通路１６、及び
このバキューム通路１６と連通ずる環状の第１のバキュ
ーム溝１７が設けられている。前記ブラケット１２には
、偏芯カムの一部を構成する軸受１８、前記ベアリング
１４と連結する偏芯軸１９、及びこの偏芯軸１９と連結
するモータ（図示せず）が設けられている。前記吸着ゴ
ム１５上には、ウェハ支持具１１の空洞部１１ａ、バキ
ューム通路１６及びバキューム溝１７を真空にすること
により、周縁部が下方向に引張られる第１のウェハ２０
が設けられている。この第１のウェハ２０上にはウェハ
ホルダー２１が設けられ、該ウェハホルダー２１には第
２のウェハ２２が第１のウェハ２０と対向して設けられ
ている。ここで、上記ベアリング１４、偏芯軸１９、軸
受１８及びモータにより偏芯カムが構成される。A suction rubber 15 as an elastic body is set on the jig 11 and the slide cup 13 so as to be in contact with the upper surface of the support 11. The suction rubber 15 is provided with a first vacuum passage 16 communicating with the cavity 11a and a first annular vacuum groove 17 communicating with the vacuum passage 16. The bracket 12 is provided with a bearing 18 constituting a part of the eccentric cam, an eccentric shaft 19 connected to the bearing 14, and a motor (not shown) connected to the eccentric shaft 19. On the suction rubber 15 is a first wafer 20 whose peripheral edge is pulled downward by evacuating the cavity 11a of the wafer support 11, the vacuum passage 16, and the vacuum groove 17.
is provided. A wafer holder 21 is provided on the first wafer 20 , and a second wafer 22 is provided on the wafer holder 21 so as to face the first wafer 20 . Here, an eccentric cam is constituted by the bearing 14, the eccentric shaft 19, the bearing 18, and the motor.
次に、上記構造のウェハ接合装置の動作順序を説明する
。Next, the operation sequence of the wafer bonding apparatus having the above structure will be explained.
■、吸着ゴム１５の上面がフラットな状態で第１のウェ
ハ２０をセットした後、図示しない真空装置をＯＮする
と、空洞部１１ａ、バキューム通路１６及び環状のバキ
ューム溝１７を通して第１のウェハ２０を吸着する。(2) After setting the first wafer 20 with the top surface of the suction rubber 15 flat, turning on a vacuum device (not shown), the first wafer 20 is inserted through the cavity 11a, the vacuum passage 16 and the annular vacuum groove 17. Adsorb.
■、第１のウェハ２０の吸着を確認してからモータを回
転すると、偏芯軸１つも回転してスライドカップ１３が
下降する。スライドカップ１３が下降すると、吸着ゴム
１５及び第１のウェハ２゜はウェハ支持具１１の上面に
沿って球面形状に変形する。(2) When the motor is rotated after confirming that the first wafer 20 is attracted, one eccentric shaft also rotates and the slide cup 13 descends. When the slide cup 13 descends, the suction rubber 15 and the first wafer 2° are deformed into a spherical shape along the upper surface of the wafer support 11.
■。第１のウェハ２０が球面形状になった状態で第１の
ウェハ２０を第２のウェハ２２に接触させた後、モータ
を逆回転させることにより偏芯軸１９を介してベアリン
グ１４も回転する。その結果、第１のウェハ２０はフラ
ットな初期状態に徐徐に復帰しながら、第１・第２のウ
ェハ２０．２２は徐徐に中心部より密着されて接合が行
われる。■. After the first wafer 20 is brought into contact with the second wafer 22 in a state where the first wafer 20 has a spherical shape, the bearing 14 is also rotated via the eccentric shaft 19 by rotating the motor in the reverse direction. As a result, while the first wafer 20 gradually returns to its flat initial state, the first and second wafers 20 and 22 are gradually brought into close contact from the center and bonded.
実施例１によれば、ウェハ支持具１１の付近にベアリン
グ１４、偏芯軸１９、軸受１８及びモータから構成され
る偏芯カムを設けることにより、第１のウェハ２０の周
縁部の復帰力を徐徐に解除することができる。従って、
第１・第２のウェハ２０．２２を接合する際、ウェハ２
０．２２の中心部に気泡等の残留ガスが残ることを回避
できる。According to the first embodiment, by providing an eccentric cam including a bearing 14, an eccentric shaft 19, a bearing 18, and a motor near the wafer support 11, the restoring force of the peripheral edge of the first wafer 20 is reduced. It can be released gradually. Therefore,
When bonding the first and second wafers 20 and 22, the wafer 2
It is possible to avoid residual gas such as bubbles from remaining in the center of the 0.22 mm.
事実、従来気泡がウェハ内に残留する確率が１１５であ
ったのに対し、本発明では全くなくなった。In fact, while conventionally the probability of bubbles remaining in the wafer was 115, in the present invention there is no probability of bubbles remaining in the wafer.
実施例２
第３図において、３１は第１のウェハ２０の周縁部に対
応する吸着ゴム１５に設けられた環状の第２のバキュー
ム溝である。また、前記吸着ゴム１５には、このバキュ
ム溝３１に連通ずる第２のバキューム通路３２が設けら
れている。Embodiment 2 In FIG. 3, reference numeral 31 denotes a second annular vacuum groove provided in the suction rubber 15 corresponding to the peripheral edge of the first wafer 20. Further, the suction rubber 15 is provided with a second vacuum passage 32 communicating with the vacuum groove 31.
次に上記構造の装置の動作順序を説明する。Next, the operating sequence of the apparatus having the above structure will be explained.
０１表面がフラットな吸着ゴム１５に第１のウェハ２０
をセットした後、空洞部１１ａ、第１のバキューム通路
１６及び第１のバキューム溝１７を介して第１のウェハ
２０を吸着する。これにより、第１のウェハ２０は、ウ
ェハ支持具１１の上面に沿って凸状に反る。01 Place the first wafer 20 on the suction rubber 15 with a flat surface.
After setting, the first wafer 20 is sucked through the cavity 11a, the first vacuum passage 16, and the first vacuum groove 17. As a result, the first wafer 20 is warped in a convex manner along the upper surface of the wafer support 11.
０１次に、第２のバキューム通路３２及び第２のバキュ
ーム溝３１を介してバキュームを行なう。01 Next, vacuum is performed via the second vacuum passage 32 and the second vacuum groove 31.
００次に、ウェハ支持具１１を上昇させて第１のウェハ
２０の中心部を第２のウェハ２２の中心部に接触させる
。ウェハ２０．２２同志が接触したら、上昇を停止する
とともに、空洞部１１ａ１第１のバキューム通路１６及
び第１のバキューム通１１７のバキュムをＯＦＦにする
。これにより、第１のウェハ２０は急激に平面状に復帰
しようとするが、第２のバキューム通路３２及び第２の
バキューム溝３１のバキューム力が働きウェハ２０と吸
着ゴム１５が一体化しており、この吸着ゴム１５とウェ
ハ支持具１１との側面接触′４／Ｘでの摩擦力のため、
第１のウェハ２０の周縁部の復帰力は徐徐に解除されて
ウェハ２０．２２同志の接合が行われる。00 Next, the wafer support 11 is raised to bring the center of the first wafer 20 into contact with the center of the second wafer 22. When the wafers 20 and 22 come into contact with each other, the ascent is stopped and the vacuum in the first vacuum passage 16 and the first vacuum passage 117 of the cavity 11a1 is turned off. As a result, the first wafer 20 tries to return to a flat state rapidly, but the vacuum force of the second vacuum passage 32 and the second vacuum groove 31 works to integrate the wafer 20 and the suction rubber 15. Due to the frictional force at the side surface contact '4/X between the suction rubber 15 and the wafer support 11,
The restoring force on the peripheral edge of the first wafer 20 is gradually released, and the wafers 20 and 22 are bonded together.
実施例２によれば、実施例１と同様な効果を有する。According to the second embodiment, the same effects as those of the first embodiment are obtained.
なお、上記実施例では、第１のウェハの周縁部の復帰力
を徐徐に解除する手段（偏芯カム等）が第１・第２のウ
ェハの下側に設けた場合について述べたが、これに限ら
ず、両ウェハの上側に設けた場合でもよい。即ち、この
場合上方から第１のウェハの周縁部の復帰力を徐徐に解
除することになる。In the above embodiment, a case was described in which a means (such as an eccentric cam) for gradually releasing the restoring force on the peripheral edge of the first wafer was provided below the first and second wafers. However, it may be provided above both wafers. That is, in this case, the restoring force on the peripheral edge of the first wafer is gradually released from above.
以上詳述した如く本発明によれば、２枚のウェハを接合
する際、ウェハの中心部に気泡等の残留ガスが残存する
のを回避でき、もって良好な素子を形成せきるるウェハ
接合装置を提供できる。As detailed above, the present invention provides a wafer bonding apparatus that can avoid residual gas such as bubbles from remaining in the center of the wafers when bonding two wafers, thereby forming good devices. Can be provided.
第１図は本発明の実施例１に係るウェハ接合装置の説明
図、第２図は従来のウェハ接合装置の説明図、第３図は
本発明の実施例２に係るウェハ接合装置の説明図である
。
１１・・・ウェハ支持具、１１ａ・・・空洞部、１２・
・・ブラケット、１３・・・スライドカップ、１４・・
・ベアリング、１５・・・吸着ゴム、１６．３２・・・
バキューム通路、１７．３１・・・バキューム溝、１８
・・・軸受、１９・・・偏芯軸、２０．２２・・・ウェ
ハ、２１・・・ウェハホルダー。FIG. 1 is an explanatory diagram of a wafer bonding apparatus according to Embodiment 1 of the present invention, FIG. 2 is an explanatory diagram of a conventional wafer bonding apparatus, and FIG. 3 is an explanatory diagram of a wafer bonding apparatus according to Embodiment 2 of the present invention. It is. 11... Wafer supporter, 11a... Cavity part, 12.
...Bracket, 13...Slide cup, 14...
・Bearing, 15... Adsorption rubber, 16.32...
Vacuum passage, 17.31... Vacuum groove, 18
... bearing, 19 ... eccentric shaft, 20.22 ... wafer, 21 ... wafer holder.
Claims (3)
持具と、前記ウェハと対向する第２のウェハを保持する
ウェハホルダーとを有し、前記第１のウェハを凸状に変
形して両ウェハの中心部同志を接触させた後、第１のウ
ェハの復帰力にもとずいて両ウェハの周縁部同志も接触
させて両ウェハを接合するウェハ接合治具において、第
１のウェハの周縁部の復帰力を徐徐に解除する手段を具
備することを特徴とするウェハ接合装置。(1) A wafer supporter that holds a first wafer via an elastic body and a wafer holder that holds a second wafer facing the wafer, and that deforms the first wafer into a convex shape. In a wafer bonding jig, the center portions of both wafers are brought into contact with each other, and then the peripheral portions of both wafers are also brought into contact based on the restoring force of the first wafer, thereby joining both wafers. A wafer bonding apparatus comprising means for gradually releasing the restoring force on the peripheral edge of the wafer bonding apparatus.
により第１のウェハの周縁部の復帰力を徐徐に解除する
ことを特徴とする特許請求の範囲第１項記載のウェハ接
合装置。(2) The wafer bonding apparatus according to claim 1, characterized in that an eccentric cam is provided near the wafer support, thereby gradually releasing the restoring force on the peripheral edge of the first wafer. .
状のバキューム溝を設けるとともに、このバキューム溝
に連通するバキューム通路を設け、このバキューム溝の
吸引により前記第１のウェハと前記弾性体とを一体化し
た状態で前記第１のウェハを凸状態から復帰させ、前記
ウェハ支持具と前記弾性体との側面の接触部での摩擦力
により第１のウェハの周縁部の復帰力を徐徐に解除する
ことを特徴とする特許請求の範囲第１項記載のウェハ接
合装置。(3) An annular vacuum groove is provided in the elastic body corresponding to the peripheral edge of the first wafer, and a vacuum passage communicating with the vacuum groove is provided, and the suction of the vacuum groove causes the first wafer and the elastic member to The first wafer is returned from the convex state in a state where the first wafer is integrated with the body, and the restoring force of the peripheral edge of the first wafer is reduced by the frictional force at the side surface contact between the wafer support and the elastic body. 2. The wafer bonding apparatus according to claim 1, wherein the wafer bonding apparatus releases gradually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21143885A JPS6271215A (en) | 1985-09-25 | 1985-09-25 | Wafer jointing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21143885A JPS6271215A (en) | 1985-09-25 | 1985-09-25 | Wafer jointing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6271215A true JPS6271215A (en) | 1987-04-01 |
| JPH044743B2 JPH044743B2 (en) | 1992-01-29 |
Family
ID=16605954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21143885A Granted JPS6271215A (en) | 1985-09-25 | 1985-09-25 | Wafer jointing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6271215A (en) |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01169917A (en) * | 1987-12-24 | 1989-07-05 | Fujitsu Ltd | Bonding process of wafer |
| US5131968A (en) * | 1990-07-31 | 1992-07-21 | Motorola, Inc. | Gradient chuck method for wafer bonding employing a convex pressure |
| US5273553A (en) * | 1989-08-28 | 1993-12-28 | Kabushiki Kaisha Toshiba | Apparatus for bonding semiconductor substrates |
| US5300175A (en) * | 1993-01-04 | 1994-04-05 | Motorola, Inc. | Method for mounting a wafer to a submount |
| US5314107A (en) * | 1992-12-31 | 1994-05-24 | Motorola, Inc. | Automated method for joining wafers |
| US5478782A (en) * | 1992-05-25 | 1995-12-26 | Sony Corporation | Method bonding for production of SOI transistor device |
| US5964978A (en) * | 1997-03-31 | 1999-10-12 | Shin-Etsu Handotai Co., Ltd. | Method and apparatus for adhesion of semiconductor substrate |
| USRE36890E (en) * | 1990-07-31 | 2000-10-03 | Motorola, Inc. | Gradient chuck method for wafer bonding employing a convex pressure |
| WO2007127825A2 (en) * | 2006-04-28 | 2007-11-08 | Hewlett-Packard Development Company, L.P. | Fabrication tool for bonding |
| JP2010087278A (en) * | 2008-09-30 | 2010-04-15 | Mitsubishi Heavy Ind Ltd | Device and method for joining wafer |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
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| US11460892B2 (en) | 2020-03-28 | 2022-10-04 | Apple Inc. | Glass cover member for an electronic device enclosure |
| US11535551B2 (en) | 2016-09-23 | 2022-12-27 | Apple Inc. | Thermoformed cover glass for an electronic device |
| US11565506B2 (en) | 2016-09-23 | 2023-01-31 | Apple Inc. | Thermoformed cover glass for an electronic device |
| US11666273B2 (en) | 2020-05-20 | 2023-06-06 | Apple Inc. | Electronic device enclosure including a glass ceramic region |
| US11680010B2 (en) | 2019-07-09 | 2023-06-20 | Apple Inc. | Evaluation of transparent components for electronic devices |
| US11927988B2 (en) | 2020-03-28 | 2024-03-12 | Apple Inc. | Glass cover member for an electronic device enclosure |
| US11945048B2 (en) | 2020-12-23 | 2024-04-02 | Apple Inc. | Laser-based cutting of transparent components for an electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58116734A (en) * | 1981-12-29 | 1983-07-12 | Canon Inc | Exposing apparatus |
| JPS61145839A (en) * | 1984-12-20 | 1986-07-03 | Toshiba Corp | Semiconductor wafer bonding method and bonding jig |
-
1985
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58116734A (en) * | 1981-12-29 | 1983-07-12 | Canon Inc | Exposing apparatus |
| JPS61145839A (en) * | 1984-12-20 | 1986-07-03 | Toshiba Corp | Semiconductor wafer bonding method and bonding jig |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01169917A (en) * | 1987-12-24 | 1989-07-05 | Fujitsu Ltd | Bonding process of wafer |
| US5273553A (en) * | 1989-08-28 | 1993-12-28 | Kabushiki Kaisha Toshiba | Apparatus for bonding semiconductor substrates |
| USRE36890E (en) * | 1990-07-31 | 2000-10-03 | Motorola, Inc. | Gradient chuck method for wafer bonding employing a convex pressure |
| US5131968A (en) * | 1990-07-31 | 1992-07-21 | Motorola, Inc. | Gradient chuck method for wafer bonding employing a convex pressure |
| US5478782A (en) * | 1992-05-25 | 1995-12-26 | Sony Corporation | Method bonding for production of SOI transistor device |
| US5523254A (en) * | 1992-05-25 | 1996-06-04 | Sony Corporation | Method for production of SOI transistor device and SOI transistor |
| US5314107A (en) * | 1992-12-31 | 1994-05-24 | Motorola, Inc. | Automated method for joining wafers |
| US5300175A (en) * | 1993-01-04 | 1994-04-05 | Motorola, Inc. | Method for mounting a wafer to a submount |
| US5964978A (en) * | 1997-03-31 | 1999-10-12 | Shin-Etsu Handotai Co., Ltd. | Method and apparatus for adhesion of semiconductor substrate |
| WO2007127825A2 (en) * | 2006-04-28 | 2007-11-08 | Hewlett-Packard Development Company, L.P. | Fabrication tool for bonding |
| WO2007127825A3 (en) * | 2006-04-28 | 2008-04-10 | Hewlett Packard Development Co | Fabrication tool for bonding |
| JP2009535823A (en) * | 2006-04-28 | 2009-10-01 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー． | Manufacturing tool for bonding |
| US7866364B2 (en) | 2006-04-28 | 2011-01-11 | Hewlett-Packard Development Company, L.P. | Fabrication tool for bonding |
| JP2010087278A (en) * | 2008-09-30 | 2010-04-15 | Mitsubishi Heavy Ind Ltd | Device and method for joining wafer |
| US9130000B2 (en) | 2008-09-30 | 2015-09-08 | Mitsubishi Heavy Industries | Wafer bonding device and wafer bonding method |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
| US8389385B2 (en) | 2009-02-04 | 2013-03-05 | Micron Technology, Inc. | Semiconductor material manufacture |
| US11419231B1 (en) | 2016-09-22 | 2022-08-16 | Apple Inc. | Forming glass covers for electronic devices |
| US10800141B2 (en) | 2016-09-23 | 2020-10-13 | Apple Inc. | Electronic device having a glass component with crack hindering internal stress regions |
| US11535551B2 (en) | 2016-09-23 | 2022-12-27 | Apple Inc. | Thermoformed cover glass for an electronic device |
| US11565506B2 (en) | 2016-09-23 | 2023-01-31 | Apple Inc. | Thermoformed cover glass for an electronic device |
| US11066322B2 (en) | 2017-12-01 | 2021-07-20 | Apple Inc. | Selectively heat-treated glass-ceramic for an electronic device |
| US11420900B2 (en) | 2018-09-26 | 2022-08-23 | Apple Inc. | Localized control of bulk material properties |
| US11680010B2 (en) | 2019-07-09 | 2023-06-20 | Apple Inc. | Evaluation of transparent components for electronic devices |
| US11460892B2 (en) | 2020-03-28 | 2022-10-04 | Apple Inc. | Glass cover member for an electronic device enclosure |
| US11927988B2 (en) | 2020-03-28 | 2024-03-12 | Apple Inc. | Glass cover member for an electronic device enclosure |
| US11666273B2 (en) | 2020-05-20 | 2023-06-06 | Apple Inc. | Electronic device enclosure including a glass ceramic region |
| US11945048B2 (en) | 2020-12-23 | 2024-04-02 | Apple Inc. | Laser-based cutting of transparent components for an electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH044743B2 (en) | 1992-01-29 |
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