JPS6267834A - Laser processing - Google Patents

Laser processing

Info

Publication number
JPS6267834A
JPS6267834A JP60206471A JP20647185A JPS6267834A JP S6267834 A JPS6267834 A JP S6267834A JP 60206471 A JP60206471 A JP 60206471A JP 20647185 A JP20647185 A JP 20647185A JP S6267834 A JPS6267834 A JP S6267834A
Authority
JP
Japan
Prior art keywords
film
irradiated
laser beams
si
absorbed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60206471A
Other versions
JPH0821623B2 (en
Inventor
Mikio Hongo
Morio Inoue
Takeoki Miyauchi
Mitsuhiro Morita
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60206471A priority Critical patent/JPH0821623B2/en
Publication of JPS6267834A publication Critical patent/JPS6267834A/en
Publication of JPH0821623B2 publication Critical patent/JPH0821623B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Abstract

PURPOSE:To produce a semiconductor memory with high reliability enabling a wire to be cut off without cracking at all by a method wherein a wavelength to be absorbed into a passivation film is selected for the laser beams for laser processing to remove the passivation film from the surface successively downward finally to cut off the wiring. CONSTITUTION:When a chip with an Si film 7 showing the characteristics of a curve 29 is irradiated with the third higher harmonics 12b of YAG laser, the ultraviolet laser beams are absorbed into the SiN film 7 to be removed successively downward to the perfect removal of SiN film 7 limited to the part irradiated with the laser beams. When the chip is further irradiated with the laser beams 12b, the laser beams 12b are transmitted by phosphorus glass layer 4 but absorbed into a poly-Si layer 3 to be explosively diffused simultaneously removing the phosphorus glass layer 4. When an irradiated region is set up using a rectangular slit on a sample with an SiO2 film 4 on the poly-Si wiring 3 and another SiO2 film on the SiO2 film 4 to be irradiated with the third higher harmonics of YAG laser, the SiN film can be almost perfectly removed at the third pulse while the poly-Si wiring can be cut off at the fourth pulse.
JP60206471A 1985-09-20 1985-09-20 Les - The processing method Expired - Fee Related JPH0821623B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60206471A JPH0821623B2 (en) 1985-09-20 1985-09-20 Les - The processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60206471A JPH0821623B2 (en) 1985-09-20 1985-09-20 Les - The processing method

Publications (2)

Publication Number Publication Date
JPS6267834A true JPS6267834A (en) 1987-03-27
JPH0821623B2 JPH0821623B2 (en) 1996-03-04

Family

ID=16523923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60206471A Expired - Fee Related JPH0821623B2 (en) 1985-09-20 1985-09-20 Les - The processing method

Country Status (1)

Country Link
JP (1) JPH0821623B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6452243U (en) * 1987-09-28 1989-03-31
US6057180A (en) * 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
JP2003519933A (en) * 2000-01-10 2003-06-24 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド Method for processing a memory link with burst of pulse laser of the laser system and ultrashort pulse
WO2008069307A1 (en) * 2006-12-08 2008-06-12 Cyber Laser Inc. Method and apparatus for modifying integrated circuit by laser
JP2008270780A (en) * 2007-03-23 2008-11-06 Semiconductor Energy Lab Co Ltd Method of manufacturing crystalline semiconductor film, and method of manufacturing thin-film transistor
JP2010528861A (en) * 2007-05-25 2010-08-26 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド Laser processing of the light-reflecting multilayer target structure
JP2014143285A (en) * 2013-01-23 2014-08-07 Disco Abrasive Syst Ltd Wafer processing method
JP2015142015A (en) * 2014-01-29 2015-08-03 株式会社ディスコ Semiconductor wafer processing method
JP2016041448A (en) * 2015-11-18 2016-03-31 株式会社ディスコ Ablation processing method for passivation film-laminated substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856355A (en) * 1981-09-30 1983-04-04 Hitachi Ltd Semiconductor integrated circuit device
JPS59104141A (en) * 1982-12-07 1984-06-15 Fujitsu Ltd Manufacture of semiconductor device
JPS60176250A (en) * 1984-02-23 1985-09-10 Toshiba Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856355A (en) * 1981-09-30 1983-04-04 Hitachi Ltd Semiconductor integrated circuit device
JPS59104141A (en) * 1982-12-07 1984-06-15 Fujitsu Ltd Manufacture of semiconductor device
JPS60176250A (en) * 1984-02-23 1985-09-10 Toshiba Corp Manufacture of semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6452243U (en) * 1987-09-28 1989-03-31
US6057180A (en) * 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
JP2003519933A (en) * 2000-01-10 2003-06-24 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド Method for processing a memory link with burst of pulse laser of the laser system and ultrashort pulse
WO2008069307A1 (en) * 2006-12-08 2008-06-12 Cyber Laser Inc. Method and apparatus for modifying integrated circuit by laser
JP2008147406A (en) * 2006-12-08 2008-06-26 Cyber Laser Kk Method and device for correcting integrated circuit by laser
JP2008270780A (en) * 2007-03-23 2008-11-06 Semiconductor Energy Lab Co Ltd Method of manufacturing crystalline semiconductor film, and method of manufacturing thin-film transistor
JP2010528861A (en) * 2007-05-25 2010-08-26 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド Laser processing of the light-reflecting multilayer target structure
JP2014143285A (en) * 2013-01-23 2014-08-07 Disco Abrasive Syst Ltd Wafer processing method
JP2015142015A (en) * 2014-01-29 2015-08-03 株式会社ディスコ Semiconductor wafer processing method
JP2016041448A (en) * 2015-11-18 2016-03-31 株式会社ディスコ Ablation processing method for passivation film-laminated substrate

Also Published As

Publication number Publication date
JPH0821623B2 (en) 1996-03-04

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees