CN117047304A - Dicing method and system of semiconductor device - Google Patents
Dicing method and system of semiconductor device Download PDFInfo
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- CN117047304A CN117047304A CN202310997453.5A CN202310997453A CN117047304A CN 117047304 A CN117047304 A CN 117047304A CN 202310997453 A CN202310997453 A CN 202310997453A CN 117047304 A CN117047304 A CN 117047304A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 title claims abstract description 62
- 239000011521 glass Substances 0.000 claims abstract description 129
- 238000002161 passivation Methods 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000005520 cutting process Methods 0.000 claims description 60
- 238000000227 grinding Methods 0.000 claims description 12
- 238000005336 cracking Methods 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 89
- 230000008569 process Effects 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 10
- 230000008646 thermal stress Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 208000037656 Respiratory Sounds Diseases 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 235000020610 powder formula Nutrition 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses a dicing method and a dicing system for a semiconductor device. The semiconductor device includes a substrate and a glass passivation layer; the glass passivation layer is positioned on the substrate; the dicing method of the semiconductor device includes: controlling the laser to emit laser rays with preset wavelength to the galvanometer according to preset power and preset frequency; controlling the vibrating mirror to move the laser ray according to the preset speed and the preset path so that the laser ray focused by the field lens scans the scribing channel of the semiconductor device for a plurality of times according to the preset speed to scribe the semiconductor device; wherein the scribe line is positioned on the glass passivation layer; the field lens is arranged under the vibrating lens. The technical scheme of the embodiment of the invention realizes scribing on the glass passivation layer, can better cut the glass passivation layer, improves the scribing efficiency, and avoids the glass passivation layer from cracking or generating cracks during scribing.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a dicing method and system for a semiconductor device.
Background
The back end of the semiconductor chip manufacturing process has a dicing process, i.e. the individual chip units on the wafer are separated by dicing.
At present, the dicing process of semiconductor chips is generally divided into two major categories, namely grinding wheel dicing and laser dicing, and most of semiconductor discrete devices are used for improving the reliability of chips, and a mesa glass passivation process is generally adopted, namely, a substrate PN junction is exposed through a trench etching process and the PN junction in the substrate is directly or indirectly coated by glass.
The common glass coating methods in the glass passivation process include a knife scraping method, an electrophoresis method and a spin coating lithography method, wherein chip scribing channels prepared by the knife scraping method and the electrophoresis method are completely filled with glass, and during subsequent scribing, the problem that glass is easy to crack when a grinding wheel or laser is adopted for cutting due to high hardness and high brittleness of glass powder is solved, so that the cutting efficiency and quality are difficult to ensure.
Disclosure of Invention
The invention provides a dicing method and a dicing system for a semiconductor device, which are used for solving the problems that the dicing efficiency is low, glass is easy to crack and the semiconductor device cannot be efficiently diced when the semiconductor device is diced.
According to an aspect of the present invention, there is provided a dicing method of a semiconductor device including a substrate and a glass passivation layer; the glass passivation layer is positioned on the substrate;
the dicing method comprises the following steps:
Controlling the laser to emit laser rays with preset wavelength to the galvanometer according to preset power and preset frequency;
controlling the vibrating mirror to move laser rays according to a preset speed and a preset path so as to enable the laser rays focused by the field lens to scan the scribing channel of the semiconductor device for multiple times according to the preset speed, so as to scribe the semiconductor device; wherein the scribe line is located on the glass passivation layer; the field lens is arranged under the vibrating lens.
Optionally, the controlling the laser to emit laser light of a preset wavelength to the galvanometer according to a preset power and a preset frequency includes:
after the semiconductor device is attached to the blue film or the UV film, the laser is controlled to emit laser light with preset wavelength to the vibrating mirror according to preset power and preset frequency.
Optionally, the glass passivation layer comprises a first glass passivation layer on a first side of the substrate and a second glass passivation layer on a second side of the substrate, the first side being opposite the second side;
the controlling the vibrating mirror to move the laser ray according to a preset speed and a preset path so that the laser ray focused by the field lens scans the scribing channel of the semiconductor device for a plurality of times according to the preset speed comprises the following steps:
And controlling the vibrating mirror to move the laser light according to a preset speed and a preset path, so that the laser light focused by the field lens scans the scribing channel on the first glass passivation layer and/or the scribing channel on the second glass passivation layer for a plurality of times according to the preset speed.
Optionally, controlling the galvanometer to move the laser beam according to a preset speed and a preset path, so that the laser beam focused by the field lens scans the scribe line of the semiconductor device for multiple times according to the preset speed, including:
controlling the vibrating mirror to move laser rays according to a preset cutting depth, a preset speed and a preset path so as to enable the laser rays focused by the field lens to scan the scribing channel of the semiconductor device for a plurality of times according to the preset speed;
or controlling the vibrating mirror to move the laser ray according to the preset speed and the preset path according to the preset cutting times, so that the laser ray focused by the field lens scans the scribing channel of the semiconductor device for a plurality of times according to the preset speed.
Optionally, the preset frequency is greater than or equal to 800kHz;
and/or, the preset wavelength is less than or equal to 355nm.
Optionally, the preset speed is greater than or equal to 500 millimeters per second and less than or equal to 5000 millimeters per second.
Optionally, the preset power is greater than or equal to 5W and less than or equal to 20W.
Optionally, controlling the galvanometer to move the laser beam according to a preset speed and a preset path, so that the laser beam focused by the field lens scans the scribe line of the semiconductor device for multiple times according to the preset speed, including:
controlling the vibrating mirror to move laser rays according to a preset speed and a preset path so as to enable the laser rays focused by the field lens to scan the scribing channel of the semiconductor device for multiple times according to the preset speed, and cutting the semiconductor device to a first preset depth;
controlling a grinding wheel to cut the semiconductor device to a second preset depth so as to scribe the semiconductor device.
According to another aspect of the present invention, there is provided a dicing system of a semiconductor device including a substrate and a glass passivation layer; the glass passivation layer is positioned on the substrate; the scribing system comprises a controller, a laser, a vibrating mirror and a field lens;
the field lens is arranged under the vibrating lens; the galvanometer is configured to receive laser rays emitted by the laser and control the laser rays to be emitted from the field lens;
the controller is respectively connected with the laser and the galvanometer, and is used for controlling the laser to emit laser rays with preset wavelength to the galvanometer according to preset power and preset frequency; the vibrating mirror is controlled to move laser rays according to a preset speed and a preset path, so that the laser rays focused by the field lens scan the scribing channel of the semiconductor device for multiple times according to the preset speed, and scribing is carried out on the semiconductor device; wherein the scribe line is located on the glass passivation layer; the field lens is arranged under the vibrating lens.
Optionally, the dicing system of the semiconductor device further includes a first mirror, a second mirror, a beam expander, a diaphragm, and a third mirror;
the mirror surface of the first reflecting mirror forms a first preset angle with the laser light emitted by the laser, and the first reflecting mirror is used for reflecting the laser light emitted by the laser to the second reflecting mirror;
the mirror surface of the second reflecting mirror forms a second preset angle with the mirror surface of the first reflecting mirror, and the second reflecting mirror is used for reflecting the laser rays to the beam expander; the reflected light of the second reflector is perpendicular to the reflected light of the first reflector;
the diaphragm is positioned between the beam expanding lens and the third reflector, the third reflector is parallel to the second reflector, the mirror surface of the third reflector is opposite to the mirror surface of the second reflector, and the third reflector is used for reflecting the laser light passing through the diaphragm to the vibrating lens; the reflected light of the third reflector is perpendicular to the reflected light of the second reflector.
According to the technical scheme provided by the embodiment of the invention, the laser emits laser light with the preset wavelength to the vibrating mirror according to the preset power and the preset frequency, so that the frequency of the laser light emitted by the laser can be higher, the wavelength can be shorter, the absorption of the glass passivation layer to the laser light is improved, the glass passivation layer is better cut, and the problems of glass cracking or crack generation are avoided. In addition, the absorption degree of the glass passivation layer to laser rays is not required to be improved by changing the material of the glass passivation layer, and the glass powder formula is not required to be changed, so that the dicing method of the embodiment can be suitable for various glasses, the cost is reduced, the time is saved, and the applicability of the dicing method of the semiconductor device is improved. And, preset power can set up less, can make the laser instrument export laser ray with less power to cut along the scribing lane with less power many times, realize peeling off layer by layer, avoid laser ray energy too high, make the energy too concentrated, the problem that thermal stress is difficult to release in a short time, thereby avoided the problem of glass cutting crackle. The laser beam is moved by controlling the vibrating mirror according to the preset speed and the preset path, so that the laser beam focused by the field lens scans the scribing channel of the semiconductor device for multiple times according to the preset speed, the semiconductor device is scribed, the laser beam is moved by the vibrating mirror, the speed of the laser beam is the preset speed, namely, the laser beam scans the scribing channel of the semiconductor device for multiple times at the preset speed, the preset speed can be set to be larger, and the cutting efficiency can be improved. Therefore, the technical scheme of the embodiment of the invention realizes scribing on the glass passivation layer, and can better cut the glass passivation layer, so that the glass passivation layer is prevented from cracking or generating cracks during scribing.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention;
fig. 2 is a schematic structural view of yet another semiconductor device according to an embodiment of the present invention;
fig. 3 is a flowchart of a dicing method of a semiconductor device according to an embodiment of the present invention;
FIG. 4 is a schematic illustration of the effect of scribing with a grinding wheel;
FIG. 5 is a schematic view showing the effect of laser dicing in the related art;
fig. 6 is a schematic view of the effect after dicing by the dicing method of the present embodiment;
fig. 7 is a flowchart of a dicing method of still another semiconductor device according to the embodiment of the present invention;
Fig. 8 is a flowchart of a dicing method of still another semiconductor device according to the embodiment of the present invention;
fig. 9 is a schematic structural diagram of a dicing system for a semiconductor device according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a dicing system for a semiconductor device according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the process of manufacturing a mesa semiconductor chip, firstly, doping is performed on a substrate to form a PN junction, then the PN junction is exposed through a trench etching process, and finally, in order to protect the PN junction, a single-layer or multi-layer composite passivation film structure mainly comprising a glass passivation layer is generally arranged. Fig. 1 is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention, where, as shown in fig. 1, the semiconductor device includes a substrate 10 and a glass passivation layer 20, the substrate 10 includes a PN junction 11, grooves are disposed on both surfaces of the substrate 10, and the glass passivation layer 20 is located in the grooves. Since a plurality of chips are generally fabricated on a wafer in the fabrication of semiconductor chips, dicing is required for the completion of fabrication. As shown in fig. 1, when dicing a semiconductor device, for example, dicing is performed along a scribe line in the middle of a trench, however, there is a glass passivation layer 20 in the trench, and even after the glass passivation layer 20 is removed by photolithography, glass remains. For example, in order to improve dicing efficiency, a spin-on lithography method is used to prepare the glass passivation layer 20 in the related art, fig. 2 is a schematic structural diagram of another semiconductor device provided in the embodiment of the present invention, as shown in fig. 2, fig. 2 is different from fig. 1 only in the structure of the glass passivation layer 20, and in fig. 2, a spin-on lithography method is used to prepare the glass passivation layer 20, where although glass in a dicing lane can be removed by means of photolithography and development, and underlying silicon (the substrate 10) is exposed, so that subsequent dicing is facilitated, but the process cost is high, the process is complicated, the process control difficulty is high, and the problem of glass residue in the dicing lane often occurs, and when glass is diced by using a grinding wheel or laser, chipping is easy to occur, and damage is caused to the glass passivation layer 20.
In view of the above technical problems, the present embodiment provides a dicing method of a semiconductor device, where the dicing method is performed by, for example, a controller, which may be a host computer or a programmable logic controller (Programmable Logic Controller, PLC), or may be other control devices. Fig. 3 is a flowchart of a dicing method of a semiconductor device according to an embodiment of the present invention, as shown in fig. 3, the method includes:
s110, controlling the laser to emit laser light with preset wavelength to the galvanometer according to preset power and preset frequency.
The galvanometer is also called a laser scanner, and can control the deflection of the laser beam in an X-Y plane (in two directions perpendicular to each other in a plane horizontal to the lens).
In particular, it was found through the study of the inventors that when the glass passivation layer is cut by using laser, the cause of the glass explosion may be that the glass passivation layer absorbs the laser poorly, the laser cannot melt or gasify the glass rapidly, so that the laser almost completely penetrates the glass passivation layer to act on the underlying silicon (substrate), the underlying silicon gasifies and heats and swells to crack the surface glass, the glass in the central region of the laser acts on due to thicker glass layer, the glass in the central region of the laser acts on cracks and falls off, and the glass in the edge of the laser acts on the region becomes radial crack. Moreover, the inventor researches that, for the glass passivation layer, the shorter the wavelength and the higher the frequency of the laser light in a certain wavelength and frequency range, the better the absorption effect of the glass passivation layer on the laser light. Therefore, the laser emits laser light with preset wavelength according to the preset frequency, the preset frequency is higher, the preset wavelength is smaller, the wavelength of the laser light is shorter, the frequency is higher, and therefore the absorption of the glass passivation layer to the laser light is improved, the glass passivation layer is cut better, and the problems of glass cracking or cracking are avoided.
Therefore, the absorption degree of the glass passivation layer to laser rays is not required to be improved by changing the material of the glass passivation layer, and the glass powder formula is not required to be changed, so that the dicing method of the embodiment can be suitable for various glasses, the cost is reduced, the time is saved, and the applicability of the dicing method of the semiconductor device is improved. And, compare with the mode of using the emery wheel scribing, the process that this embodiment adopted laser scribing is stable, need not frequent blade change, can also improve the scribing speed, promotes scribing efficiency. And, preset power can set up less, can make the laser instrument export laser ray with less power to cut along the scribing lane with less power many times, realize peeling off layer by layer, avoid laser ray energy too high, make the energy too concentrated, the problem that thermal stress is difficult to release in a short time, thereby avoided the problem of glass cutting crackle.
S120, controlling the vibrating mirror to move laser rays according to a preset speed and a preset path, so that the laser rays focused by the field lens scan the scribing channel of the semiconductor device for a plurality of times according to the preset speed, and scribing the semiconductor device; wherein the scribe line is positioned on the glass passivation layer; the field lens is arranged under the vibrating lens.
Before dicing, scribe lines are generally etched on the semiconductor device, and the scribe lines are located in the middle of the trenches of the semiconductor device and cut along the scribe lines during dicing. The dicing streets are, for example, cross-shaped, and four chips can be separated by a single dicing. The vibrating mirror can control the moving speed and path of the laser ray, and the preset speed can be set larger, so that the laser ray can move at a higher speed, and the cutting efficiency is convenient to improve. The predetermined path is matched with the scribe line such that the laser light can scan the scribe line of the semiconductor device. The field lens is arranged under the vibrating mirror, namely, the field lens is arranged at the light emergent position of the vibrating mirror, so that the field lens focuses laser light output by the vibrating mirror, and the semiconductor device is convenient to cut.
Specifically, the inventor has found that laser light is generally used to fix in the related art, and the semiconductor device is controlled to move so as to realize cutting along the scribe line. However, when dicing in this manner, the energy of the laser beam acting on the semiconductor device is concentrated, resulting in a large thermal stress, which tends to crack or generate cracks in the glass passivation layer. Therefore, the vibration mirror and the field lens are used for cutting the semiconductor device, the vibration mirror can control the path of laser rays, so that the laser rays emitted from the field lens move along the scribing channel to scan the scribing channel, the energy of the laser rays acting on the semiconductor device is prevented from being concentrated, and the glass passivation layer is prevented from cracking or generating cracks. And, through controlling the galvanometer and outputting laser light according to predetermineeing the speed, control the speed of laser light promptly and be predetermineeing the speed for laser light scans the scribing lane of semiconductor device many times with predetermineeing the speed, predetermineeing the speed and, for example, great, can make laser light high-speed movement, thereby promote cutting speed, be favorable to promoting cutting efficiency.
Therefore, the technical scheme of the embodiment realizes cutting on the glass passivation layer, and can better cut the glass passivation layer, so that the glass passivation layer is prevented from cracking or generating cracks during cutting.
For example, fig. 4 is a schematic view showing the effect of dicing with a grinding wheel, and as shown in fig. 4, the glass passivation layer 20 is broken at the position 30 at the cutting operation, that is, the problem of broken edges is easily caused by dicing with a grinding wheel. Fig. 5 is a schematic view showing the effect of laser scribing in the related art, and as shown in fig. 5, a plurality of cracks 40 are generated on the glass passivation layer 20. Fig. 6 is a schematic view of the effect of the dicing method according to the present embodiment after dicing, as shown in fig. 6, the problem that the glass passivation layer 20 breaks edges or cracks are not generated after dicing according to the dicing method according to the present embodiment, i.e. the dicing method according to the present embodiment can better cut the glass passivation layer, and avoid the glass passivation layer from breaking or generating cracks during dicing.
In summary, according to the technical scheme of the embodiment, the laser emits laser light with the preset wavelength to the galvanometer according to the preset power and the preset frequency, so that the frequency of the laser light emitted by the laser can be higher, the wavelength can be shorter, the absorption of the glass passivation layer to the laser light is improved, the glass passivation layer is cut better, and the problem that glass cracks or cracks occur is avoided. In addition, the absorption degree of the glass passivation layer to laser rays is not required to be improved by changing the material of the glass passivation layer, and the glass powder formula is not required to be changed, so that the dicing method of the embodiment can be suitable for various glasses, the cost is reduced, the time is saved, and the applicability of the dicing method of the semiconductor device is improved. And, preset power can set up less, can make the laser instrument export laser ray with less power to cut along the scribing lane with less power many times, realize peeling off layer by layer, avoid laser ray energy too high, make the energy too concentrated, the problem that thermal stress is difficult to release in a short time, thereby avoided the problem of glass cutting crackle. The laser beam focused by the field lens scans the scribing channel of the semiconductor device for a plurality of times according to the preset speed by controlling the vibrating mirror to move the laser beam according to the preset speed and the preset path, so that the semiconductor device is scribed, the speed of the laser beam is the preset speed by moving the laser beam through the vibrating mirror, namely, the laser beam scans the scribing channel of the semiconductor device for a plurality of times at the preset speed, the preset speed can be set larger, and the cutting efficiency can be improved. The problem that the laser light energy is too high, so that the energy is too concentrated, and the thermal stress is difficult to release in a short time is avoided, so that the problem of glass cutting cracks is avoided. Therefore, the technical scheme of the embodiment realizes scribing on the glass passivation layer, and the glass passivation layer can be cut better, so that the glass passivation layer is prevented from cracking or generating cracks during scribing.
On the basis of the above technical solution, fig. 7 is a flowchart of a dicing method of a semiconductor device according to another embodiment of the present invention, optionally, referring to fig. 7, the dicing method of a semiconductor device includes:
s210, after the semiconductor device is attached to the blue film or the UV film, controlling the laser to emit laser light with preset wavelength to the galvanometer according to preset power and preset frequency.
Wherein, the UV film is formed by coating the paint on the surface of the film substrate.
Specifically, by attaching the semiconductor device to the blue film or the UV film during dicing, the semiconductor device can be fixed, preventing the semiconductor device from moving to cut off the dicing streets. Also, it is possible to transfer a plurality of semiconductor chips by moving a blue film or a UV film after dicing of the semiconductor device is completed, instead of transferring one semiconductor chip at a time, to avoid damage or loss of the semiconductor chip, and to improve transfer efficiency. In the dicing method of the embodiment, the vibrating mirror can accurately control the travel of laser rays in the dicing process, the travel of the laser rays does not exceed the edge of the wafer, and the blue film or the UV film is not damaged. Therefore, the semiconductor device can be attached to the blue film or the UV film before the chip is transferred and during dicing, so that a fixture is not required to be additionally arranged for fixing the semiconductor device during dicing, the cost is reduced, and the time for preparing the semiconductor chip is saved. If laser cutting (dicing in a mode that a platform drives a wafer to move through a linear motor and laser light is fixed) in the related art is adopted, the wafer is easily cut on a blue film or a UV film due to inherent reasons such as acceleration and deceleration precision and efficiency of the linear motor, the wafer cannot be stuck on the blue film or the UV film for cutting, the wafer transferring process is easily broken after cutting, and the complete transfer of the wafer is not facilitated.
S220, controlling the vibrating mirror to move the laser light according to the preset speed and the preset path so that the laser light focused by the field lens scans the scribing channel of the semiconductor device for a plurality of times according to the preset speed to scribe the semiconductor device; wherein the scribe line is positioned on the glass passivation layer; the field lens is arranged under the vibrating lens.
On the basis of the above aspects, optionally, referring to fig. 1, the glass passivation layer 20 includes a first glass passivation layer 21 located on a first side A1 of the substrate 10 and a second glass passivation layer 22 located on a second side A2 of the substrate 10, where the first side A1 is opposite to the second side A2.
On the basis of the above technical solutions, optionally, controlling the galvanometer in S120 and S220 to move the laser beam according to a preset speed and a preset path, so that the laser beam focused by the field lens scans the scribe line of the semiconductor device for multiple times according to the preset speed, including:
and controlling the vibrating mirror to move the laser light according to the preset speed and the preset path so as to enable the laser light focused by the field mirror to scan the scribing channel on the first glass passivation layer and/or the scribing channel on the second glass passivation layer for a plurality of times according to the preset speed.
Specifically, during dicing, dicing may be performed only according to the dicing streets on the first glass passivation layer or only according to the dicing streets on the second glass passivation layer, that is, dicing may be performed only from one side, and after dicing to the first depth, breaking is performed to separate the semiconductor chips. Thus, when dicing is performed, surface replacement dicing is not required, and dicing channels are not required to be arranged on both sides of the semiconductor device, so that cost reduction is facilitated.
The dicing may be performed according to the dicing streets on the first glass passivation layer and the dicing streets on the second glass passivation layer, that is, dicing may be performed from both sides, and dicing may be performed according to the dicing streets on the first glass passivation layer first, dicing may be performed according to the dicing streets on the second glass passivation layer after dicing to the second depth, and dicing may be performed after dicing the semiconductor device to the first depth, so that the semiconductor chips are separated. Dicing may be performed first according to the dicing streets on the second glass passivation layer, and then dicing may be performed according to the dicing streets on the first glass passivation layer after dicing to the second depth, so that the semiconductor device is diced to the first depth. The first depth may be determined according to the thickness of the semiconductor device, for example, 50% or 60% or 70% of the thickness of the semiconductor device, and specifically may be determined according to the actual situation, and the present embodiment is not limited thereto. The second depth is, for example, half of the first depth, or may be one third of the first depth, and the present application is not limited thereto. Because when scribing, the depth is bigger, the cutting is harder, and the scribing is easier to cut by scribing from two sides, so that the depth of each cut is bigger, and the scribing efficiency is improved.
On the basis of the above technical solutions, optionally, controlling the galvanometer in S120 and S220 to move the laser beam according to a preset speed and a preset path, so that the laser beam focused by the field lens scans the scribe line of the semiconductor device for multiple times according to the preset speed, including:
controlling the vibrating mirror to move laser rays according to a preset cutting depth, a preset speed and a preset path so as to enable the laser rays focused by the field mirror to scan the scribing channel of the semiconductor device for a plurality of times according to the preset speed;
or controlling the vibrating mirror to move the laser ray according to the preset speed and the preset path according to the preset cutting times, so that the laser ray focused by the field lens scans the scribing channel of the semiconductor device for a plurality of times according to the preset speed.
Specifically, in some embodiments, dicing may be performed according to a preset dicing depth, that is, the galvanometer is controlled to move the laser beam according to a preset speed and a preset path, so that the laser beam focused by the galvanometer scans the dicing street of the semiconductor device for multiple times according to the preset speed until the dicing is performed to the preset dicing depth, where the preset dicing depth may be determined according to the thickness of the semiconductor device, for example, 50% or 60% or 70% of the thickness of the semiconductor device, and may be specifically determined according to the actual situation, which is not limited in this embodiment. The predetermined cutting depth is the same as the first depth described above.
In some embodiments, when dicing is performed, dicing may be performed according to a preset dicing frequency, that is, the galvanometer is controlled to move the laser beam according to a preset speed and a preset path, so that the laser beam focused by the field lens scans the dicing street of the semiconductor device according to the preset speed and the preset dicing frequency, so that dicing is performed to a desired depth. The preset cutting times are different from several times to tens times, so that the repeated scanning cutting is realized, the layer-by-layer stripping is realized, the problems that the laser light energy is too high, the energy is too concentrated, and the thermal stress is difficult to release in a short time are avoided, and the problem of glass cutting cracks is avoided. Further, in order to ensure dicing efficiency, the preset number of dicing times should not be too large, and in some embodiments, the preset number of dicing times is greater than or equal to 5 times and less than or equal to 50 times, and the specific preset number of dicing times may be determined according to practical situations, for example, the thickness of the semiconductor device, the frequency and wavelength of the laser light emitted by the laser, the preset frequency of the galvanometer, and so on.
On the basis of the technical schemes, optionally, the preset frequency is more than or equal to 800kHz; and/or, the preset wavelength is less than or equal to 355nm.
Specifically, the preset frequency is greater than or equal to 800kHz, so that the frequency of the laser light is relatively high, the absorption intensity of the glass passivation layer to the laser light is improved, and better scribing is facilitated. However, when the preset frequency is too high, there may be a problem that the price of the laser is high and the performance stability is low, preferably, the preset frequency is greater than or equal to 800kHz and less than or equal to 1600kHz, so that the cost can be reduced, the stability of the laser emitted by the laser is improved, and the dicing stability is further improved. In other embodiments, if a stable cut is achieved with a frequency greater than 1600kHz, the preset frequency may also be controlled to be greater than 1600kHz.
Setting the preset wavelength to be less than or equal to 355nm, wherein the preset wavelength is 355nm, and the laser light is ultraviolet; alternatively, the laser beam is deep ultraviolet if the predetermined wavelength is 266nm, for example. Therefore, the wavelength of the laser light is smaller, so that the absorption intensity of the glass passivation layer to the laser light is improved, and better scribing is facilitated.
Optionally, the preset speed is greater than or equal to 500 millimeters per second and less than or equal to 5000 millimeters per second.
Specifically, by setting the preset speed of the vibrating mirror to be greater than or equal to 500 mm per second and less than or equal to 5000 mm per second, the moving speed of the laser light output by the vibrating mirror through the field mirror is higher, the cutting efficiency is improved, and the cutting time is saved.
Optionally, the preset power is greater than or equal to 5W and less than or equal to 20W.
Specifically, through setting up the preset power of laser instrument to be greater than or equal to 5W, and be less than or equal to 20W for preset frequency is less, can make the laser instrument export laser beam with less power, cuts along the scribing lane with less power many times, realizes peeling off layer by layer, avoids laser beam energy too high for the energy is too concentrated, and the problem of thermal stress short time difficult to release, thereby has avoided the problem of glass cutting crackle. Preferably, the preset power is greater than or equal to 5W and less than or equal to 15W. Therefore, the dicing saw can cut along the dicing channels for multiple times with smaller power, and the layer-by-layer stripping is facilitated.
Illustratively, the cutting is performed, for example, at a laser light emitted by a laser having a frequency of 400kHz and a wavelength of 355nm, a power of 15W and a speed of 1000 millimeters per second; cutting according to the frequency of laser rays emitted by a laser device being 600kHz, the wavelength being 355nm, the power of the laser device being 15W and the speed of the laser rays being 1000 millimeters per second; cutting according to the frequency of the laser rays emitted by the laser device being 800kHz, the wavelength being 355nm, the power of the laser device being 15W and the speed of the laser rays being 1000 millimeters per second; cutting according to the frequency of the laser rays emitted by the laser device being 1000kHz, the wavelength being 355nm, the power of the laser device being 15W and the speed of the laser rays being 1000 millimeters per second; cutting depth data in the X and Y directions (X and Y directions of the galvanometer movement, that is, the direction of the scribe line) are obtained for comparison. For example, the desired depth of the cut is 120 μm to 140 μm, the desired heat affected zone of the cut is within 70 μm, and the desired time of the cut is within 120 s. Table 1 shows a comparison table of the first set of dicing data, and as shown in Table 1, when the frequencies of the laser light are 400kHz and 600kHz, cracks exist on the surface of the semiconductor device after dicing, and the dicing result is disqualification. At the frequencies of the laser light of 800kHz and 1000kHz, after dicing, the surface of the semiconductor device has no cracks. When the frequency of the laser ray is 1000kHz, if the cutting times are 30 times, the cutting depth in the Y direction is not in the expected depth range, the cutting depth is too small, and the scribing result is unqualified; if the cutting times are 35 times, the cutting depths in the X direction and the Y direction are within the expected depth range, the cutting heat affected zone is within the expected zone, and the dicing result is qualified. Therefore, at the time of dicing, the laser may be set to emit laser light of a wavelength of 355nm at a frequency of 800kHz, and the number of dicing may be 30.
Table 1 comparison table of first set of cutting data
In summary, according to the technical scheme of the embodiment, the preset frequency is greater than or equal to 800kHz and the preset wavelength is less than or equal to 355nm when the laser is emitted, the preset speed of the laser light outputted by the vibrating mirror through the field lens is greater than or equal to 500 mm per second and less than or equal to 5000 mm per second, the preset power of the laser is greater than or equal to 5W and less than or equal to 20W, the depth after cutting is within the expected depth, the width after cutting is within the expected width, the cutting efficiency is higher, the flatness after cutting is higher, and the depth difference in different directions is smaller, so that better dicing can be realized, and the effectiveness of dicing is facilitated to be improved. And through cutting many times and stripping layer by layer, the over-cutting can be avoided, and the problems of glass cracking or cracking are avoided.
On the basis of the foregoing technical solutions, in some embodiments, fig. 8 is a flowchart of a dicing method of a semiconductor device according to another embodiment of the present invention, and optionally, as shown in fig. 8, the dicing method of the semiconductor device includes:
s310, controlling the laser to emit laser light with preset wavelength to the galvanometer according to preset power and preset frequency.
S320, controlling the vibrating mirror to move the laser light according to the preset speed and the preset path, so that the laser light focused by the field lens scans the scribing channel of the semiconductor device for a plurality of times according to the preset speed, and the semiconductor device is cut to a first preset depth.
S330, controlling the grinding wheel to cut the semiconductor device to a second preset depth so as to scribe the semiconductor device.
Specifically, the controller may be connected to, for example, a motor of the grinding wheel, and the operation of the grinding wheel is controlled by controlling the motor. The laser, the vibrating mirror and the field lens are controlled to cut the semiconductor device to the first preset depth, then the grinding wheel is controlled to cut according to the scribing channel, and after the semiconductor device is cut to the second preset depth, splitting is performed, so that when the thickness of the semiconductor device is large, the cutting efficiency can be improved, and when the semiconductor device begins to cut, edge breakage or crack generation is not easy to occur, and the cutting efficiency can be improved on the basis of ensuring that edge breakage and crack do not occur. The second preset depth is the preset cutting depth, and the first preset depth may be half of the preset cutting depth, or may be one third of the preset cutting depth, or may be other depths, which is not limited in this embodiment.
The embodiment also provides a dicing system of the semiconductor device, and fig. 9 is a schematic structural diagram of the dicing system of the semiconductor device according to the embodiment of the invention. As shown in fig. 9, the dicing system of the semiconductor device includes a controller 410, a laser 420, a galvanometer 430, and a field lens 440; the field lens 440 is mounted under the galvanometer 430, and the galvanometer 430 is configured to receive the laser light emitted by the laser 420 and control the laser light to be emitted from the field lens 440; the controller 410 is respectively connected with the laser 420 and the galvanometer 430, and the controller 410 is used for controlling the laser 420 to emit laser light with preset wavelength to the galvanometer 430 according to preset power and preset frequency; and controls the galvanometer 430 to move the laser beam according to a preset speed and a preset path so that the laser beam focused by the field lens 440 scans the scribe lane of the semiconductor device a plurality of times according to the preset speed to scribe the semiconductor device; wherein the scribe line is located on the glass passivation layer.
Specifically, by setting the galvanometer 430, the galvanometer 430 can control the direction of the laser beam, so that the laser beam can move along the scribe line to scan the scribe line, thereby avoiding the concentration of the energy of the laser beam acting on the semiconductor device and avoiding the cracking or cracking of the passivation layer of the glass. The controller 410 controls the laser 420 to emit laser light with a preset wavelength to the galvanometer 430 according to a preset power and a preset frequency, so that the frequency of the laser light emitted by the laser 420 can be higher, the wavelength can be shorter, the absorption of the laser light by the glass passivation layer is improved, the glass passivation layer is cut better, and the problem of glass cracking or cracking is avoided. The controller 410 controls the galvanometer 430 to move the laser beam according to a preset speed and a preset path, so that the laser beam focused by the field lens scans the dicing streets of the semiconductor device for a plurality of times according to the preset speed, the preset speed can be set larger, the laser beam can scan the dicing streets at a higher speed, and the cutting efficiency is convenient to improve. In addition, the preset power can be set smaller, so that the glass is cut along the scribing channel for multiple times with smaller power, the layer-by-layer stripping is realized, the problems that the laser light energy is too high, the energy is too concentrated, and the thermal stress is difficult to release in a short time are avoided, and the problem of glass cutting cracks is avoided.
On the basis of the above technical solution, in some implementations, fig. 10 is a schematic structural diagram of a dicing system of a semiconductor device according to an embodiment of the present invention, and optionally, as shown in fig. 10, the dicing system of a semiconductor device further includes a first reflective mirror 450, a second reflective mirror 460, a beam expander 470, a diaphragm 480, and a third reflective mirror 480; the mirror surface of the first reflective mirror 450 forms a first preset angle with the laser light emitted by the laser 420, and the first reflective mirror 450 is used for reflecting the laser light emitted by the laser 420 to the second reflective mirror 460; the mirror surface of the second reflective mirror 460 forms a second preset angle with the mirror surface of the first reflective mirror 450, and the second reflective mirror 460 is used for reflecting the laser light to the beam expander 470; wherein, the reflected light of the second reflector 460 is perpendicular to the reflected light of the first reflector 450; the diaphragm 480 is located between the beam expander and the third reflector 480, the third reflector 480 is parallel to the second reflector 460, the mirror surface of the third reflector 480 is opposite to the mirror surface of the second reflector 460, and the third reflector 480 is used for reflecting the laser light passing through the diaphragm 480 to the vibrating mirror 430; wherein the reflected light of the third mirror 480 is perpendicular to the reflected light of the second mirror 460.
Specifically, when the first preset angle and the second preset angle are both 45 °, for example, the direction of the laser light is reversed after passing through the first mirror 450 and the second mirror 460 (the laser light emitted by the laser 420), and then enters the beam expander 470. In this way, the laser 420 and the beam expander 470 need not be arranged in a line, and space in the lateral direction (the direction of the laser light emitted by the laser 420) can be saved. By arranging the beam expander 460 and the diaphragm 470, light rays with smaller edge energy can be removed, so that laser light rays with more concentrated energy and better quality are obtained. The laser light is reflected to the galvanometer 430 through the third light emitting lens 490, so that the galvanometer 430 can conveniently control the laser light to scan and cut along the scribing channel. The field lens 440 can further focus the light, and improve the energy of the laser light, so as to facilitate the improvement of the cutting efficiency.
It should be noted that fig. 10 only shows one possible way to output laser light by using the laser 420, the galvanometer 430, the field lens 440, the first mirror 450, the second mirror 460, the beam expander 470, the diaphragm 480, and the third mirror 480, and is not limited thereto. In other embodiments, only one or two mirrors may be provided, or more mirrors may be provided, and the present embodiment is not limited thereto.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. A dicing method of a semiconductor device, characterized in that the semiconductor device comprises a substrate and a glass passivation layer; the glass passivation layer is positioned on the substrate;
the dicing method comprises the following steps:
controlling the laser to emit laser rays with preset wavelength to the galvanometer according to preset power and preset frequency;
controlling the vibrating mirror to move laser rays according to a preset speed and a preset path so as to enable the laser rays focused by the field lens to scan the scribing channel of the semiconductor device for multiple times according to the preset speed, so as to scribe the semiconductor device; wherein the scribe line is located on the glass passivation layer; the field lens is arranged under the vibrating lens.
2. The method of claim 1, wherein controlling the laser to emit laser light of a predetermined wavelength to the galvanometer at a predetermined power and a predetermined frequency comprises:
after the semiconductor device is attached to the blue film or the UV film, the laser is controlled to emit laser light with preset wavelength to the vibrating mirror according to preset power and preset frequency.
3. The method of claim 1, wherein the glass passivation layer comprises a first glass passivation layer on a first side of the substrate and a second glass passivation layer on a second side of the substrate, the first side opposite the second side;
the controlling the vibrating mirror to move the laser ray according to a preset speed and a preset path so that the laser ray focused by the field lens scans the scribing channel of the semiconductor device for a plurality of times according to the preset speed comprises the following steps:
and controlling the vibrating mirror to move the laser light according to a preset speed and a preset path, so that the laser light focused by the field lens scans the scribing channel on the first glass passivation layer and/or the scribing channel on the second glass passivation layer for a plurality of times according to the preset speed.
4. The method of claim 1, wherein controlling the galvanometer to move the laser beam at a preset speed and a preset path so that the laser beam after focusing the field lens scans the scribe line of the semiconductor device a plurality of times at the preset speed comprises:
Controlling the vibrating mirror to move laser rays according to a preset cutting depth, a preset speed and a preset path so as to enable the laser rays focused by the field lens to scan the scribing channel of the semiconductor device for a plurality of times according to the preset speed;
or controlling the vibrating mirror to move the laser ray according to the preset speed and the preset path according to the preset cutting times, so that the laser ray focused by the field lens scans the scribing channel of the semiconductor device for a plurality of times according to the preset speed.
5. The method of claim 1, wherein the preset frequency is greater than or equal to 800kHz;
and/or, the preset wavelength is less than or equal to 355nm.
6. The method of claim 1, wherein the preset speed is greater than or equal to 500 millimeters per second and less than or equal to 5000 millimeters per second.
7. The method of claim 1, wherein the preset power is greater than or equal to 5W and less than or equal to 20W.
8. The method according to any one of claims 1 to 7, wherein,
controlling the vibrating mirror to move laser rays according to a preset speed and a preset path so as to enable the laser rays focused by the field lens to scan the scribing channel of the semiconductor device for multiple times according to the preset speed, comprising the following steps:
Controlling the vibrating mirror to move laser rays according to a preset speed and a preset path so as to enable the laser rays focused by the field lens to scan the scribing channel of the semiconductor device for multiple times according to the preset speed, and cutting the semiconductor device to a first preset depth;
controlling a grinding wheel to cut the semiconductor device to a second preset depth so as to scribe the semiconductor device.
9. A dicing system for a semiconductor device, the semiconductor device comprising a substrate and a glass passivation layer; the glass passivation layer is positioned on the substrate; the scribing system comprises a controller, a laser, a vibrating mirror and a field lens;
the field lens is arranged under the vibrating lens; the galvanometer is configured to receive laser rays emitted by the laser and control the laser rays to be emitted from the field lens;
the controller is respectively connected with the laser and the galvanometer, and is used for controlling the laser to emit laser rays with preset wavelength to the galvanometer according to preset power and preset frequency; the vibrating mirror is controlled to move laser rays according to a preset speed and a preset path, so that the laser rays focused by the field lens scan the scribing channel of the semiconductor device for multiple times according to the preset speed, and scribing is carried out on the semiconductor device; wherein the scribe line is located on the glass passivation layer; the field lens is arranged under the vibrating lens.
10. The dicing system of claim 9, further comprising a first mirror, a second mirror, a beam expander, a diaphragm, and a third mirror;
the mirror surface of the first reflecting mirror forms a first preset angle with the laser light emitted by the laser, and the first reflecting mirror is used for reflecting the laser light emitted by the laser to the second reflecting mirror;
the mirror surface of the second reflecting mirror forms a second preset angle with the mirror surface of the first reflecting mirror, and the second reflecting mirror is used for reflecting the laser rays to the beam expander; the reflected light of the second reflector is perpendicular to the reflected light of the first reflector;
the diaphragm is positioned between the beam expanding lens and the third reflector, the third reflector is parallel to the second reflector, the mirror surface of the third reflector is opposite to the mirror surface of the second reflector, and the third reflector is used for reflecting the laser light passing through the diaphragm to the vibrating lens; the reflected light of the third reflector is perpendicular to the reflected light of the second reflector.
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